Thermal and Stress Analysis on Multi-Ridge GaN-Based Laser Diodes

IF 2.1 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2025-06-27 DOI:10.1109/JQE.2025.3583998

Minghang Liang;Jiahao Dong;Yu He;Jingxian Liang;Pengyan Wen

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Abstract

Thermal effects and stress play important roles in both performance and reliability of GaN-based laser diodes, particularly in multi-ridge lasers designed for high-power applications. In this paper, we studied the temperature and stress distributions within a five-ridge GaN-based laser diode. In the cross-ridge direction, the laser chip with a ridge spacing configuration of 64-76-76-

$64~\mu $

m exhibited the best temperature uniformity while an isometric ridge spacing of

$60~\mu $

m demonstrated the best stress uniformity. Furthermore, we proposed a tapered heatsink design to enhance the temperature and stress uniformity along the ridge. Our results indicated that, in comparison with the conventional structure, the tapered heatsink reduced the temperature difference along the ridge by 59%, leading to relatively lower temperature at both facets. Additionally, the tapered heatsink reduced the average stress by 26%. This study provides theoretical foundations and practical guidelines for the thermal and stress design of semiconductor lasers.

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多岭氮化镓基激光二极管的热应力分析

热效应和应力对氮化镓基激光二极管的性能和可靠性起着重要的作用，特别是在高功率应用的多脊激光器中。本文研究了五脊氮化镓基激光二极管内部的温度和应力分布。在横脊方向上，脊间距为64~ 76 ~ 76 ~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $64~ $60~ $60~ $ m的激光芯片温度均匀性最好；此外，我们提出了一个锥形散热器设计，以提高沿脊的温度和应力均匀性。我们的研究结果表明，与传统结构相比，锥形散热器将沿脊的温差降低了59%，从而导致两个方面的温度相对较低。此外，锥形散热器将平均应力降低了26%。本研究为半导体激光器的热应力设计提供了理论基础和实践指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.