IEEE Journal of Quantum Electronics最新文献

{"title":"A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width","authors":"Kola Thirupathaiah;Montasir Qasymeh","doi":"10.1109/JQE.2024.3485503","DOIUrl":"https://doi.org/10.1109/JQE.2024.3485503","url":null,"abstract":"A new nanoplasmonic directional coupler (DC) is proposed, utilizing a conductor-backed coplanar waveguide (CPW) with a finite width. Our design approach includes first establishing a theoretical transmission-line model for the coupler, and then utilizing the characteristic parameters of related coupled CPW structures for a comprehensive analysis. The provided analysis is conducted through full-wave analysis using a conformal mapping technique (CMT), implemented in CST Microwave Studio Suite CAD simulation software. This article primarily focuses on designing and analyzing the directional coupler using a backed conductor on the dielectric substrate with finite width, applying the transmission line (TL) theory method to achieve a coupling coefficient (\u0000<inline-formula> <tex-math>$C_{C}$ </tex-math></inline-formula>\u0000) of 3-dB. The proposed plasmonic coupler operates efficiently at optical frequencies in both the O- and L-bands. Simulations demonstrate that the coupling coefficient of the directional coupler is effectively modulated by varying the width of the backed conductor (\u0000<inline-formula> <tex-math>$w_{c}$ </tex-math></inline-formula>\u0000). Consequently, the proposed design surpasses the performance of traditional narrow-bandwidth couplers, offering significant benefits for applications in subwavelength wireless networks and high-density nanoscale photonic integrated circuits (PICs).","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influences of Thermal Effect on the Performance of FMCW Signal Generated by Current-Modulated DFB-LDs","authors":"Qiupin Wang;Guangqiong Xia;Yingke Xie;Pu Ou;Chaotao He;Shan Hu;Fengling Zhang;Maorong Zhao;Zhengmao Wu","doi":"10.1109/JQE.2024.3484250","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484250","url":null,"abstract":"A cost-effective linear chirp source is urgently needed in various commercial scenarios. Based on typical coupled mode theory (CMT) and a highly effective split-step time-domain model (SS-TDM) method, the influence of thermal effect on the performance of frequency-modulated continuous-wave (FMCW) signal generated by current-modulated distributed feedback laser diodes (CM-DFB-LDs) is numerically simulated. The results show that the thermal effect in DFB-LDs has a significant impact on the nonlinearity of the FMCW signal, and the increasing thermal effect leads to an enhancement in the nonlinearity of the FMCW signal. For a given thermal diffusion coefficient \u0000<inline-formula> <tex-math>$D=2.0 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, with the increase of the thickness H between the active region and the substrate from \u0000<inline-formula> <tex-math>$1.5 ; mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$6 ; mu $ </tex-math></inline-formula>\u0000m, both the bandwidth and the nonlinearity increase gradually at first and then tend towards saturation. For H fixed at \u0000<inline-formula> <tex-math>$4.5 ; mu $ </tex-math></inline-formula>\u0000m, with the increase of D from \u0000<inline-formula> <tex-math>$1.5 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s to \u0000<inline-formula> <tex-math>$6 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, both the bandwidth and the nonlinearity show a downward trend. For \u0000<inline-formula> <tex-math>$D = 6.0 ; times 10.5$ </tex-math></inline-formula>\u0000 m2/s and \u0000<inline-formula> <tex-math>$H = 4.5 ; mu $ </tex-math></inline-formula>\u0000m, a high-quality FMCW signal with a nonlinearity of \u0000<inline-formula> <tex-math>$3.852 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 and an root mean square (RMS) of 19.3 MHz under a bandwidth of 19.1 GHz can be obtained. Taking such FMCW signal as a transmitted signal, a 2 m distance ranging has been demonstrated, and the relative error is 0.340%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142600123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intensity and Degree of Coherence of Vortex Beams in Atmospheric Turbulence","authors":"Muhsin Caner Gökçe;Yahya Baykal;Hamza Gerçekcioğlu;Yalçın Ata","doi":"10.1109/JQE.2024.3484248","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484248","url":null,"abstract":"We utilize the Huygens-Fresnel principle to derive the mutual coherence function (MCF) for a vortex beam, which is the main focus of our investigation. Then, we examine the intensity and modulus of the complex degree of coherence (DOC) characteristics of vortex beams in atmospheric turbulence. Our results indicate that as the topological charge increases, the intensity distribution of the vortex beam becomes less affected by atmospheric turbulence. However, the modulus of the complex DOC decreases.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport","authors":"Wenjie Li;Zhaoqiang Liu;Chunshuang Chu;Kangkai Tian;Haoyan Liu;Yonghui Zhang;Changsheng Xia;Xiaowei Sun;Zi-Hui Zhang","doi":"10.1109/JQE.2024.3478089","DOIUrl":"https://doi.org/10.1109/JQE.2024.3478089","url":null,"abstract":"Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV light and the poor carrier injection efficiency. To solve these issues, we design and optimize a 250 nm DUV LED structure with thin quantum wells and discrete p-type functional layers. The discrete p-type functional layers consist of a high Al composition-gradient layer (layer I) and a low Al composition-gradient layer (layer II). Calculated results indicate that the use of thin quantum wells can rearrange the valence subband distributions to increase the transverse-electric (TE) polarized emission, thereby enhancing light extraction efficiency (LEE). Additionally, the LEE can also be increased by optimizing the thickness of the discrete p-type functional layers, i.e., modulating the optical absorption effect and the optical cavity effect. Meanwhile, we also investigate the impact of different negative polarization bulk charge densities on the electron and hole injections by changing the thickness of layer I and layer II, which can obtain the optimized internal quantum efficiency (IQE) for the 250 nm DUV LED. Therefore, when compared with conventional DUV LEDs, the proposed LED architectures improve the EQE and optical power if the discrete p-type functional layers are properly designed.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"C-Band Directly Modulated Lasers With Tunable Photon–Photon Resonance in InP Membrane","authors":"Aleksandr Zozulia;Richard Schatz;Samir Rihani;Graham Berry;Kevin Williams;Yuqing Jiao","doi":"10.1109/JQE.2024.3475745","DOIUrl":"https://doi.org/10.1109/JQE.2024.3475745","url":null,"abstract":"InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon resonance (PPR) have a lot of potential to be used in short-range telecommunication systems due to their small footprint, high energy efficiency, and high modulation bandwidth. However, the stability of the S21 response in PPR-based devices is sensitive to precise phase-matching between the lasing mode and PPR mode. We designed, fabricated, measured, and analyzed a C-band DML with active phase-tuning achieved by a thermal phase shifter on top of a long passive waveguide. The phase shifter enables tuning of the PPR frequency in the range of 5 GHz resulting in the PPR peak power enhancement of 16 dB. We study the small-signal responses at different combinations of bias current and phase shifter current and show, that in some cases the phase shifter enables a bandwidth that cannot be achieved by sweeping the bias current. The laser dynamic behavior is simulated and the influence of the most important design and processing parameters on bandwidth is studied in detail.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-12"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706920","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Precision and Fast Distributed Temperature Data Demodulation Algorithm of Optical Frequency Domain Reflectometer Based on LSTM-CNN","authors":"Lei Huang;Min Liu;Yingqi Cui;Zhaohao Zhu;Ping Shum","doi":"10.1109/JQE.2024.3471988","DOIUrl":"https://doi.org/10.1109/JQE.2024.3471988","url":null,"abstract":"A demodulation algorithm based on the LSTM-CNN is proposed to simultaneously achieve the demodulation of temperature data from distributed optical frequency domain reflectometry (OFDR). As for the local measurement range along the distributed fiber, the LSTM-CNN can achieve an average mean absolutely error (MAE) of only 0.0393 and the average demodulation time is only 0.1507 seconds. The comparison with the cross-correlation algorithm, Multi-Layer Perceptron (MLP), Extreme Learning Machine (ELM), Long Short-Term Memory (LSTM), and Convolutional Neural Network (CNN) demonstrates that the MAE is reduced by 85.98%, 77.23%, 88.25%, 80.95%, and 91.82%, and the average time is faster 38.19 times, 8.71 times, 3.28 times, 1.37 times, and 2.45 times, respectively. As for the full measurement range of the distributed fiber, the temperature distribution curve demodulated by LSTM-CNN is found to be consistent with the actual temperature distribution curve and the average demodulation time is 0.371 seconds, providing a new method for the temperature data demodulation in the distributed OFDR sensing system.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pseudo-Random Generator Based on a Photonic Neuromorphic Physical Unclonable Function","authors":"Dimitris Dermanis;Panagiotis Rizomiliotis;Adonis Bogris;Charis Mesaritakis","doi":"10.1109/JQE.2024.3471951","DOIUrl":"https://doi.org/10.1109/JQE.2024.3471951","url":null,"abstract":"In this work we provide numerical results concerning a silicon-on-insulator photonic neuromorphic circuit configured as a physical unclonable function. The proposed scheme is enhanced with the capability to be operated as an unconventional deterministic pseudo-random number generator, suitable for cryptographic applications that alleviates the need for key storage in non-volatile digital media. The proposed photonic neuromorphic scheme is able to offer NIST test compatible numbers with an extremely low false positive/negative probability below 10-14. The proposed scheme offers multi-functional capabilities due to the fact that it can be simultaneously used as an integrated photonic accelerator for machine-learning applications and as a hardware root of trust.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3463153","DOIUrl":"https://doi.org/10.1109/JQE.2024.3463153","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"C3-C3"},"PeriodicalIF":2.2,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10697331","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142328422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Quantum Electronics publication information","authors":"","doi":"10.1109/JQE.2024.3463157","DOIUrl":"https://doi.org/10.1109/JQE.2024.3463157","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"C2-C2"},"PeriodicalIF":2.2,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10697354","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142328424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2024.3463151","DOIUrl":"https://doi.org/10.1109/JQE.2024.3463151","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"C4-C4"},"PeriodicalIF":2.2,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10697293","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142328425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}