IEEE Journal of Quantum Electronics最新文献

Graphene-Based Integrated Optical Phase Modulator at Visible Wavelengths 基于可见波长石墨烯的集成光相位调制器

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-06 DOI: 10.1109/JQE.2025.3577472

Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di

{"title":"Graphene-Based Integrated Optical Phase Modulator at Visible Wavelengths","authors":"Qing Meng;Jiasheng Fu;Zhongying Xue;Ziao Tian;Yan Cai;Miao Zhang;Zheng Wang;Zengfeng Di","doi":"10.1109/JQE.2025.3577472","DOIUrl":"https://doi.org/10.1109/JQE.2025.3577472","url":null,"abstract":"Optical phase modulators are critical components in integrated photonic systems operating at visible wavelengths. However, current solutions to integrated optical phase modulators at visible wavelengths face challenges such as high insertion losses, large footprints, low bandwidth, and high-power consumption. In this work, we introduce a graphene-based integrated optical phase modulator designed for operation at 488 nm, implemented on silicon nitride photonic integrated circuits. This design aligns seamlessly with standard silicon photonic processes. The 3-dB bandwidth of the integrated optical phase modulator ranges from 3 GHz to 148 GHz depending on design and fabrication conditions, and a 74 GHz 3-dB bandwidth is considered achievable based on previously published results. Meanwhile, a modulation efficiency (quantified by the product of the <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-phase shift voltage and length, <inline-formula> <tex-math>$boldsymbol {V_{mathrm {pi }}L}$ </tex-math></inline-formula>) of 0.13 V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm could be attained. Moreover, the modulator is capable of operating across the entire visible wavelength range. This investigation presents a compact, high-speed solution to integrated optical phase modulators at visible wavelengths, facilitating a broad range of applications in the visible spectrum.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3571563

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IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3571569

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IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3571567

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Analysis of Curved Optical Waveguides by Conformal Transformation 用保角变换分析弯曲光波导

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3564745

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JQE 60th Anniversary: The 70’s JQE 60周年纪念：70年代

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3563066

John M. Dallesasse

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Coupled-Mode Theory for Guided-Wave Optics 导波光学的耦合模理论

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-06-05 DOI: 10.1109/JQE.2025.3564698

引用次数: 0

Two-Dimensional Photonic Crystals for Planar IR Laser Cavities With Vertical Beam Output 垂直光束输出平面红外激光腔的二维光子晶体

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-04-21 DOI: 10.1109/JQE.2025.3562814

Ivan V. Oreshko;Sergey O. Slipchenko;Vasily V. Zolotarev;Alena E. Kazakova;Nikita A. Pikhtin

{"title":"Two-Dimensional Photonic Crystals for Planar IR Laser Cavities With Vertical Beam Output","authors":"Ivan V. Oreshko;Sergey O. Slipchenko;Vasily V. Zolotarev;Alena E. Kazakova;Nikita A. Pikhtin","doi":"10.1109/JQE.2025.3562814","DOIUrl":"https://doi.org/10.1109/JQE.2025.3562814","url":null,"abstract":"A semi-analytical 3D model has been developed to describe the modal structures of an infinite two-dimensional photonic crystal formed in a semiconductor laser waveguide heterostructure. Within the framework of the proposed simulation model, the relationship between the efficiency of laser mode light output through the surface and the geometric characteristics of the photonic crystal has been studied. As an example, we performed calculations and analysis of optical output losses in a waveguide heterostructure based on the AlGaAs/InGaAs material system. The study focused on square symmetry photonic crystals with simple geometric shapes, including circles and triangles. The results demonstrate that surface-emitting lasers designed in planar structures using photonic crystals based on circular holes have low radiation output efficiency. Efficient light output can be achieved by using triangular hole shapes with a fill factor greater than 0.1-0.2, while the symmetry of the triangular hole significantly influences the output efficiency. The fill factor also determines the mode discrimination and the conditions for single-mode or multi-mode operation. Structures incorporating regular triangular photonic crystals exhibit the highest output losses, while enhancing the mode overlap between the planar waveguide and the photonic crystal leads to an increase in output losses from 2 to 10 cm<inline-formula> <tex-math>${}^{mathrm {-1}}$ </tex-math></inline-formula>.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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10 W-Level High-Efficiency Continuous-Wave and Gain-Switched All-Fiber Laser at 1.7 μm 10w级1.7 μm高效连续波增益开关全光纤激光器

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-04-15 DOI: 10.1109/JQE.2025.3560527

Jue Su;Tingting Chen;Junjie Ma;Jingbin Lan;Xin Zhou;Lu Huang;Hongzhen Dai;Zhengqian Luo

{"title":"10 W-Level High-Efficiency Continuous-Wave and Gain-Switched All-Fiber Laser at 1.7 μm","authors":"Jue Su;Tingting Chen;Junjie Ma;Jingbin Lan;Xin Zhou;Lu Huang;Hongzhen Dai;Zhengqian Luo","doi":"10.1109/JQE.2025.3560527","DOIUrl":"https://doi.org/10.1109/JQE.2025.3560527","url":null,"abstract":"We report <inline-formula> <tex-math>$1.7~boldsymbol {mu }$ </tex-math></inline-formula>m high-efficiency, high-power continuous-wave (CW) and gain-switched thulium-doped all-fiber lasers with master oscillator power amplifier (MOPA) configuration. The <inline-formula> <tex-math>$1.7~boldsymbol {mu }$ </tex-math></inline-formula>m seed source comprises a homemade 1566 nm fiber laser as pump source, a femtosecond direct-written fiber Bragg grating pair, and a low-dopant Tm3+ gain fiber. By changing the operating mode (CW/pulsed) of the 1566 nm pump source, CW/gain-switched output of the <inline-formula> <tex-math>$1.7~boldsymbol {mu }$ </tex-math></inline-formula>m seed source can be achieved, respectively. The CW MOPA achieves a maximum output power of 10 W with a slope efficiency of 68%, representing the highest power level from a <inline-formula> <tex-math>$1.7~boldsymbol {mu }$ </tex-math></inline-formula>m Tm-doped CW laser in all-fiber format. Moreover, the amplified average output power of the demonstrated gain-switched operation is 2.28 W with the amplification slope efficiency, pulse energy, and peak power of 76.8%, <inline-formula> <tex-math>$152~boldsymbol {mu }$ </tex-math></inline-formula>J, and 2.054 kW, respectively. This is, to the best of our knowledge, the highest single pulse energy and amplification efficiency of a Tm-doped gain-switched all-fiber laser. This work provides a new path to achieve high power and large energy of <inline-formula> <tex-math>$1.7~boldsymbol {mu }$ </tex-math></inline-formula>m all-fiber laser for applications in bio-imaging and long-distance sensing technology.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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LP11 Mode All-Fiber Ultrafast Laser at 1.3 μm by Using Bismuth Telluride as an Optical Modulator 以碲化铋为光调制器的1.3 μm LP11模全光纤超快激光器

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-04-15 DOI: 10.1109/JQE.2025.3560528

H. Ahmad;B. Nizamani;A. Bencheikh

引用次数: 0