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IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3582130
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引用次数: 0
Blank Page 空白页
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3582132
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引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3582126
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引用次数: 0
Electrooptical Effects in Silicon 硅中的电光效应
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3587556
{"title":"Electrooptical Effects in Silicon","authors":"","doi":"10.1109/JQE.2025.3587556","DOIUrl":"https://doi.org/10.1109/JQE.2025.3587556","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Editorial JQE 60th Anniversary: The 80’s 社论JQE 60周年：80年代
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3583096
John M. Dallesasse
{"title":"Editorial JQE 60th Anniversary: The 80’s","authors":"John M. Dallesasse","doi":"10.1109/JQE.2025.3583096","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583096","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 3","pages":"1-2"},"PeriodicalIF":2.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11095905","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory of the Linewidth of Semiconductor Lasers 半导体激光器线宽理论
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI: 10.1109/JQE.2025.3587557
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引用次数: 0
Color Crosstalk in Two-Color Mid-Infrared LEDs With and Without Cavity Enhancement 带和不带腔增强的双色中红外led的色串扰
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-07-04 DOI: 10.1109/JQE.2025.3586201
David A. Montealegre;Weitao Dai;Matthew Z. Bellus;Logan M. Nichols;John P. Prineas
{"title":"Color Crosstalk in Two-Color Mid-Infrared LEDs With and Without Cavity Enhancement","authors":"David A. Montealegre;Weitao Dai;Matthew Z. Bellus;Logan M. Nichols;John P. Prineas","doi":"10.1109/JQE.2025.3586201","DOIUrl":"https://doi.org/10.1109/JQE.2025.3586201","url":null,"abstract":"Mid-infrared (3–<inline-formula> <tex-math>$5~mu $ </tex-math></inline-formula>m) LEDs have assumed greater importance optical gas sensors and have been explored for use in midinfrared LED arrays, in both cases to replace thermal pixels. Compared to thermal pixels, mid-infrared LEDs have near instantaneous settling times, achieve higher radiance, can have multi-spectral output, and are safer. Multispectral output creates the possibility of emission into narrowed bands for either sensing multiple gas species or creating dual emission thermal pixel arrays. However, their adoption for these applications is hindered by spectral crosstalk from emission tails at room temperature, and additionally by low efficiency, problematic in dense LED arrays with strict power density requirements. This work explores three approaches to designing two-color mid-infrared LED arrays, targeting reduced spectral crosstalk and lower power requirements: 1) monolithic two-color LEDs; 2) monolithic two-color cavity LEDs; and 3) filtered single-color cavity LEDs combined spatially. Performance metrics, such as power-to-temperature efficiency and radiance-to-crosstalk ratios, are compared across designs. Incorporation of cavities narrows emission, improves spectral radiance by 5–<inline-formula> <tex-math>$10times $ </tex-math></inline-formula> and overlap with the emission band, lowers power requirements by ~2–<inline-formula> <tex-math>$3times $ </tex-math></inline-formula>, and can reduce crosstalk. In-band to cross-band radiance ratio is generally limited to around 10–<inline-formula> <tex-math>$1000times $ </tex-math></inline-formula> for monolithic two-color devices; two single color devices allow external filtering which improves the ratio to <inline-formula> <tex-math>$10^{5}$ </tex-math></inline-formula>–<inline-formula> <tex-math>$10^{7}$ </tex-math></inline-formula>. Results provide a framework for use of mid-infrared LEDs in multi-gas sensing and two-color mid-infrared LED arrays.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power Noise-Like Pulse Generation in a Tm-Ho Co-Doped Fiber Laser Tm-Ho共掺光纤激光器中高功率类噪声脉冲的产生
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-06-27 DOI: 10.1109/JQE.2025.3584001
Longwei Luo;Huanhuan Li;Xinhao Zhou;Can Li;Junjie Zhang;Shiqing Xu
{"title":"High-Power Noise-Like Pulse Generation in a Tm-Ho Co-Doped Fiber Laser","authors":"Longwei Luo;Huanhuan Li;Xinhao Zhou;Can Li;Junjie Zhang;Shiqing Xu","doi":"10.1109/JQE.2025.3584001","DOIUrl":"https://doi.org/10.1109/JQE.2025.3584001","url":null,"abstract":"In this study, we demonstrate a high-performance passively mode-locked thulium-holmium (Tm-Ho) co-doped fiber laser utilizing a single-mode fiber-few-mode fiber-single-mode fiber (SMF-FMF-SMF) structure as an effective saturable absorber (SA) for noise-like pulse (NLP) generation. By solely adjusting the output coupling ratio from 30% to 50%, the maximum average output power at a pump power of 4.5 W is significantly increased from 238 mW to 391.2 mW in a single-pulse operation. The corresponding maximum pulse energy reaches 99.5 nJ at a repetition rate of 3.933 MHz, with a broad 3 dB bandwidth of 33.40 nm centered at 1948 nm. The laser exhibits excellent stability, as evidenced by a signal-to-noise ratio (SNR) of 69 dB. These results highlight the effectiveness of the SMF-FMF-SMF structure in improving output power and pulse characteristics, offering a promising approach for advancing high-energy mode-locked fiber lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Noise on the Optical Power Spectra of Photonic Oscillators 光子振荡器功率谱上的量子噪声
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-06-27 DOI: 10.1109/JQE.2025.3583999
Constantinos Valagiannopoulos;Athanasios Gavrielides;Vassilios Kovanis
{"title":"Quantum Noise on the Optical Power Spectra of Photonic Oscillators","authors":"Constantinos Valagiannopoulos;Athanasios Gavrielides;Vassilios Kovanis","doi":"10.1109/JQE.2025.3583999","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583999","url":null,"abstract":"Semiconductor lasers are examined in the presence of quantum noise emanated from the gain medium. A pendulum-type, third order differential law for the phase of electric field is employed and the optical power spectrum of the system is rigorously derived as a sum of Lorentzians. The influence of injection level, linewidth enhancement factor, input detuning, and noise strength on the photonic oscillator response is identified. The followed methodology paves the way towards the analytical treatment of quantum noise effect in multiple photonic integrated circuits hosting tunable limit cycles, powerful resonances, and associated hysteresis phenomena.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-10"},"PeriodicalIF":2.1,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal and Stress Analysis on Multi-Ridge GaN-Based Laser Diodes 多岭氮化镓基激光二极管的热应力分析
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-06-27 DOI: 10.1109/JQE.2025.3583998
Minghang Liang;Jiahao Dong;Yu He;Jingxian Liang;Pengyan Wen
{"title":"Thermal and Stress Analysis on Multi-Ridge GaN-Based Laser Diodes","authors":"Minghang Liang;Jiahao Dong;Yu He;Jingxian Liang;Pengyan Wen","doi":"10.1109/JQE.2025.3583998","DOIUrl":"https://doi.org/10.1109/JQE.2025.3583998","url":null,"abstract":"Thermal effects and stress play important roles in both performance and reliability of GaN-based laser diodes, particularly in multi-ridge lasers designed for high-power applications. In this paper, we studied the temperature and stress distributions within a five-ridge GaN-based laser diode. In the cross-ridge direction, the laser chip with a ridge spacing configuration of 64-76-76-<inline-formula> <tex-math>$64~mu $ </tex-math></inline-formula> m exhibited the best temperature uniformity while an isometric ridge spacing of <inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula> m demonstrated the best stress uniformity. Furthermore, we proposed a tapered heatsink design to enhance the temperature and stress uniformity along the ridge. Our results indicated that, in comparison with the conventional structure, the tapered heatsink reduced the temperature difference along the ridge by 59%, leading to relatively lower temperature at both facets. Additionally, the tapered heatsink reduced the average stress by 26%. This study provides theoretical foundations and practical guidelines for the thermal and stress design of semiconductor lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-5"},"PeriodicalIF":2.1,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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