IEEE Journal of Quantum Electronics最新文献

筛选
英文 中文
Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide 相位控制波导混合调制激光二极管的本征调制特性
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-25 DOI: 10.1109/JQE.2024.3506392
Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi
{"title":"Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide","authors":"Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi","doi":"10.1109/JQE.2024.3506392","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506392","url":null,"abstract":"A hybrid modulation laser diode integrated with a phase control section between the distributed feedback active section and intra-cavity loss modulation section (PC-HMLD) is proposed. The phase control section enables to control the phase of the light fed back from the intra-cavity loss-modulation section to the distributed feedback active section properly. It was confirmed numerically that the PC-HMLD had a wide intrinsic modulation bandwidth of more than 500 GHz and showed an eye opening for high-speed signals up to 500 Gbit/s. The load resistance dependence of the PC-HMLD’s modulation characteristics were also numerically examined. It was confirmed that eye opening can be expected for up to 500 Gbit/s if the load resistance is reduced to less than \u0000<inline-formula> <tex-math>$10Omega $ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes 4H-SiC雪崩光电二极管的快速自由运行电路
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-18 DOI: 10.1109/JQE.2024.3501195
Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo
{"title":"Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes","authors":"Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo","doi":"10.1109/JQE.2024.3501195","DOIUrl":"https://doi.org/10.1109/JQE.2024.3501195","url":null,"abstract":"4H-SiC APDs show excellent characteristics in ultraviolet detection. Requirements have been put forward for quenching circuits in high-performance single photon detection applications. Here, a fast free-running circuit is proposed with passive quenching and active resetting for the 4H-SiC APD, which achieves a 23.8 ns dead time. The detection performance of the 4H-SiC APD under different dead times were studied. The photon detection efficiency and detectable distance increase with the decreasing dead time, remaining the highest at the shortest dead time. A dead time of 23.8 ns, detectable distance of 16.8 m and photon detection efficiency of 15.5% at 275 nm are achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-4"},"PeriodicalIF":2.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers 基于InGaAs/ inasb ii型超晶格InGaAsSb势垒的高温中波长红外探测器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-08 DOI: 10.1109/JQE.2024.3494696
Shuqing Deng;Zhen Liu;Yong Huang
{"title":"High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers","authors":"Shuqing Deng;Zhen Liu;Yong Huang","doi":"10.1109/JQE.2024.3494696","DOIUrl":"https://doi.org/10.1109/JQE.2024.3494696","url":null,"abstract":"Mid-wavelength infrared detectors based on InGaAs/InAsSb superlattices were successfully grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD). AlSb-free InGaAsSb quaternary alloy was employed as the electron barrier layer to reduce the dark current. By comparing the electrical and optical performances of three PNn devices with different Ga compositions in In\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000GaxAs\u0000<inline-formula> <tex-math>$_{mathrm {1-y}}$ </tex-math></inline-formula>\u0000Sby barriers, the optimal Ga composition was found to be 0.3. At 150 K, the dark current density of this device was \u0000<inline-formula> <tex-math>$1.2 times 10^{-4}$ </tex-math></inline-formula>\u0000 A/cm2 at -0.1 V. The device operates at zero bias with a 50% cutoff wavelength of \u0000<inline-formula> <tex-math>$sim 5.1~mu $ </tex-math></inline-formula>\u0000m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of \u0000<inline-formula> <tex-math>$2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding 基于包层无孔矩形芯光子晶体光纤的偏振分束器设计
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-06 DOI: 10.1109/JQE.2024.3492147
Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji
{"title":"Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding","authors":"Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji","doi":"10.1109/JQE.2024.3492147","DOIUrl":"https://doi.org/10.1109/JQE.2024.3492147","url":null,"abstract":"A new polarization beam splitter (PBS) based on rectangular core photonic crystal fibers (RC-PCFs) is proposed. Based on the full-vector finite element method, RC-PCFs without holes in the cladding are introduced to improve the design flexibility of multi-core PCF structure. An anisotropic lattice distribution using staggered arrangement of silicon nitride rods and air holes is employed in the core region to increase the birefringence. Optimization of the rectangular core structure is conducted to achieve single-polarization single-mode (SPSM) property. Afterwards, utilizing two SPSM PCFs, in the proposed PBS, two orthogonal polarization waves are only coupled to corresponding PCFs with a device length of \u0000<inline-formula> <tex-math>$185~mu $ </tex-math></inline-formula>\u0000m, and the crosstalk-free PBS is achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions 声子修饰诱导非极性离子偶极矩排列
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-28 DOI: 10.1109/JQE.2024.3487502
Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang
{"title":"Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions","authors":"Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang","doi":"10.1109/JQE.2024.3487502","DOIUrl":"https://doi.org/10.1109/JQE.2024.3487502","url":null,"abstract":"We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width 利用有限宽度介质基底上的背衬导体的纳米光导定向耦合器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-23 DOI: 10.1109/JQE.2024.3485503
Kola Thirupathaiah;Montasir Qasymeh
{"title":"A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width","authors":"Kola Thirupathaiah;Montasir Qasymeh","doi":"10.1109/JQE.2024.3485503","DOIUrl":"https://doi.org/10.1109/JQE.2024.3485503","url":null,"abstract":"A new nanoplasmonic directional coupler (DC) is proposed, utilizing a conductor-backed coplanar waveguide (CPW) with a finite width. Our design approach includes first establishing a theoretical transmission-line model for the coupler, and then utilizing the characteristic parameters of related coupled CPW structures for a comprehensive analysis. The provided analysis is conducted through full-wave analysis using a conformal mapping technique (CMT), implemented in CST Microwave Studio Suite CAD simulation software. This article primarily focuses on designing and analyzing the directional coupler using a backed conductor on the dielectric substrate with finite width, applying the transmission line (TL) theory method to achieve a coupling coefficient (\u0000<inline-formula> <tex-math>$C_{C}$ </tex-math></inline-formula>\u0000) of 3-dB. The proposed plasmonic coupler operates efficiently at optical frequencies in both the O- and L-bands. Simulations demonstrate that the coupling coefficient of the directional coupler is effectively modulated by varying the width of the backed conductor (\u0000<inline-formula> <tex-math>$w_{c}$ </tex-math></inline-formula>\u0000). Consequently, the proposed design surpasses the performance of traditional narrow-bandwidth couplers, offering significant benefits for applications in subwavelength wireless networks and high-density nanoscale photonic integrated circuits (PICs).","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influences of Thermal Effect on the Performance of FMCW Signal Generated by Current-Modulated DFB-LDs 热效应对电流调制 DFB-LD 产生的 FMCW 信号性能的影响
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-21 DOI: 10.1109/JQE.2024.3484250
Qiupin Wang;Guangqiong Xia;Yingke Xie;Pu Ou;Chaotao He;Shan Hu;Fengling Zhang;Maorong Zhao;Zhengmao Wu
{"title":"Influences of Thermal Effect on the Performance of FMCW Signal Generated by Current-Modulated DFB-LDs","authors":"Qiupin Wang;Guangqiong Xia;Yingke Xie;Pu Ou;Chaotao He;Shan Hu;Fengling Zhang;Maorong Zhao;Zhengmao Wu","doi":"10.1109/JQE.2024.3484250","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484250","url":null,"abstract":"A cost-effective linear chirp source is urgently needed in various commercial scenarios. Based on typical coupled mode theory (CMT) and a highly effective split-step time-domain model (SS-TDM) method, the influence of thermal effect on the performance of frequency-modulated continuous-wave (FMCW) signal generated by current-modulated distributed feedback laser diodes (CM-DFB-LDs) is numerically simulated. The results show that the thermal effect in DFB-LDs has a significant impact on the nonlinearity of the FMCW signal, and the increasing thermal effect leads to an enhancement in the nonlinearity of the FMCW signal. For a given thermal diffusion coefficient \u0000<inline-formula> <tex-math>$D=2.0 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, with the increase of the thickness H between the active region and the substrate from \u0000<inline-formula> <tex-math>$1.5 ; mu $ </tex-math></inline-formula>\u0000m to \u0000<inline-formula> <tex-math>$6 ; mu $ </tex-math></inline-formula>\u0000m, both the bandwidth and the nonlinearity increase gradually at first and then tend towards saturation. For H fixed at \u0000<inline-formula> <tex-math>$4.5 ; mu $ </tex-math></inline-formula>\u0000m, with the increase of D from \u0000<inline-formula> <tex-math>$1.5 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s to \u0000<inline-formula> <tex-math>$6 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 m2/s, both the bandwidth and the nonlinearity show a downward trend. For \u0000<inline-formula> <tex-math>$D = 6.0 ; times 10.5$ </tex-math></inline-formula>\u0000 m2/s and \u0000<inline-formula> <tex-math>$H = 4.5 ; mu $ </tex-math></inline-formula>\u0000m, a high-quality FMCW signal with a nonlinearity of \u0000<inline-formula> <tex-math>$3.852 ; times 10^{-5}$ </tex-math></inline-formula>\u0000 and an root mean square (RMS) of 19.3 MHz under a bandwidth of 19.1 GHz can be obtained. Taking such FMCW signal as a transmitted signal, a 2 m distance ranging has been demonstrated, and the relative error is 0.340%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142600123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intensity and Degree of Coherence of Vortex Beams in Atmospheric Turbulence 大气湍流中涡流束的强度和连贯度
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-21 DOI: 10.1109/JQE.2024.3484248
Muhsin Caner Gökçe;Yahya Baykal;Hamza Gerçekcioğlu;Yalçın Ata
{"title":"Intensity and Degree of Coherence of Vortex Beams in Atmospheric Turbulence","authors":"Muhsin Caner Gökçe;Yahya Baykal;Hamza Gerçekcioğlu;Yalçın Ata","doi":"10.1109/JQE.2024.3484248","DOIUrl":"https://doi.org/10.1109/JQE.2024.3484248","url":null,"abstract":"We utilize the Huygens-Fresnel principle to derive the mutual coherence function (MCF) for a vortex beam, which is the main focus of our investigation. Then, we examine the intensity and modulus of the complex degree of coherence (DOC) characteristics of vortex beams in atmospheric turbulence. Our results indicate that as the topological charge increases, the intensity distribution of the vortex beam becomes less affected by atmospheric turbulence. However, the modulus of the complex DOC decreases.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport 利用离散 p 型功能层管理载流子和光子传输的 250 nm DUV LED 数值建模
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-10 DOI: 10.1109/JQE.2024.3478089
Wenjie Li;Zhaoqiang Liu;Chunshuang Chu;Kangkai Tian;Haoyan Liu;Yonghui Zhang;Changsheng Xia;Xiaowei Sun;Zi-Hui Zhang
{"title":"Numerical Modeling for 250 nm DUV LEDs With Discrete p-type Functional Layers to Manage Both Carrier and Photon Transport","authors":"Wenjie Li;Zhaoqiang Liu;Chunshuang Chu;Kangkai Tian;Haoyan Liu;Yonghui Zhang;Changsheng Xia;Xiaowei Sun;Zi-Hui Zhang","doi":"10.1109/JQE.2024.3478089","DOIUrl":"https://doi.org/10.1109/JQE.2024.3478089","url":null,"abstract":"Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV light and the poor carrier injection efficiency. To solve these issues, we design and optimize a 250 nm DUV LED structure with thin quantum wells and discrete p-type functional layers. The discrete p-type functional layers consist of a high Al composition-gradient layer (layer I) and a low Al composition-gradient layer (layer II). Calculated results indicate that the use of thin quantum wells can rearrange the valence subband distributions to increase the transverse-electric (TE) polarized emission, thereby enhancing light extraction efficiency (LEE). Additionally, the LEE can also be increased by optimizing the thickness of the discrete p-type functional layers, i.e., modulating the optical absorption effect and the optical cavity effect. Meanwhile, we also investigate the impact of different negative polarization bulk charge densities on the electron and hole injections by changing the thickness of layer I and layer II, which can obtain the optimized internal quantum efficiency (IQE) for the 250 nm DUV LED. Therefore, when compared with conventional DUV LEDs, the proposed LED architectures improve the EQE and optical power if the discrete p-type functional layers are properly designed.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
C-Band Directly Modulated Lasers With Tunable Photon–Photon Resonance in InP Membrane 具有可调谐 InP 膜光子-光子共振的 C 波段直接调制激光器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-07 DOI: 10.1109/JQE.2024.3475745
Aleksandr Zozulia;Richard Schatz;Samir Rihani;Graham Berry;Kevin Williams;Yuqing Jiao
{"title":"C-Band Directly Modulated Lasers With Tunable Photon–Photon Resonance in InP Membrane","authors":"Aleksandr Zozulia;Richard Schatz;Samir Rihani;Graham Berry;Kevin Williams;Yuqing Jiao","doi":"10.1109/JQE.2024.3475745","DOIUrl":"https://doi.org/10.1109/JQE.2024.3475745","url":null,"abstract":"InP membrane directly modulated semiconductor lasers (DMLs) with photon-photon resonance (PPR) have a lot of potential to be used in short-range telecommunication systems due to their small footprint, high energy efficiency, and high modulation bandwidth. However, the stability of the S21 response in PPR-based devices is sensitive to precise phase-matching between the lasing mode and PPR mode. We designed, fabricated, measured, and analyzed a C-band DML with active phase-tuning achieved by a thermal phase shifter on top of a long passive waveguide. The phase shifter enables tuning of the PPR frequency in the range of 5 GHz resulting in the PPR peak power enhancement of 16 dB. We study the small-signal responses at different combinations of bias current and phase shifter current and show, that in some cases the phase shifter enables a bandwidth that cannot be achieved by sweeping the bias current. The laser dynamic behavior is simulated and the influence of the most important design and processing parameters on bandwidth is studied in detail.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-12"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706920","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信