IEEE Journal of Quantum Electronics最新文献_第2页

Polarization-Maintaining Fiber With Uniform Doping Concentration Supporting 10 Weakly Coupled Modes Designed by Swarm Intelligence

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-02-10 DOI: 10.1109/JQE.2025.3540737

Gu Zhenyu;Ning Tigang;Pei Li;Ye Xiao;Hu Zhouyi;Li Jing;Guo Hao;Zheng Jingjing;Wang Jianshuai

{"title":"Polarization-Maintaining Fiber With Uniform Doping Concentration Supporting 10 Weakly Coupled Modes Designed by Swarm Intelligence","authors":"Gu Zhenyu;Ning Tigang;Pei Li;Ye Xiao;Hu Zhouyi;Li Jing;Guo Hao;Zheng Jingjing;Wang Jianshuai","doi":"10.1109/JQE.2025.3540737","DOIUrl":"https://doi.org/10.1109/JQE.2025.3540737","url":null,"abstract":"In this study, we propose a polarization-maintaining few-mode fiber (PM-FMF) with a uniform doping concentration, capable of supporting up to 10 weakly coupled modes. The fiber features a simple structure with a perforated core, designed using a particle swarm optimization (PSO) algorithm. The proposed design achieves a minimum effective refractive index difference (<inline-formula> <tex-math>$Delta n_{text {eff}}$ </tex-math></inline-formula>) of approximately <inline-formula> <tex-math>$3.819 times 10^{-4}$ </tex-math></inline-formula> at 1550 nm, ensuring great mode isolation. Furthermore, the structure demonstrates robust bending resistance, with key parameters optimized to mitigate mode coupling and confinement losses. Error analyses reveal the fiber’s tolerance to fabrication imperfections, including core size, refractive index, and air-hole displacement. This design holds great potential for high-capacity, short-reach optical communication systems, such as data centers. The findings provide valuable insights for designing next-generation optical fibers with low complexity and enhanced performance.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shaping Current Accurately to Suppress the Transient Chirp for Multi-Level PAM Signals of Directly Modulated DFB Lasers

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-01-08 DOI: 10.1109/JQE.2025.3527439

Qing-An Ding;Meiyu Jiang;Qun Niu;Jiali Ren;Liuge Du;Chunyan Liu;Fangyuan Yang;Ziyang Wang;Jinghao Lu

{"title":"Shaping Current Accurately to Suppress the Transient Chirp for Multi-Level PAM Signals of Directly Modulated DFB Lasers","authors":"Qing-An Ding;Meiyu Jiang;Qun Niu;Jiali Ren;Liuge Du;Chunyan Liu;Fangyuan Yang;Ziyang Wang;Jinghao Lu","doi":"10.1109/JQE.2025.3527439","DOIUrl":"https://doi.org/10.1109/JQE.2025.3527439","url":null,"abstract":"Low-cost direct modulation direct detection (DM-DD) systems in optical communications are severely limited by transient chirps when adopting higher-order modulation formats to meet the high-capacity transmission. To break through this constraint, a shaping current waveform technique combined with multi-level pulse amplitude modulation (PAM) is proposed to suppress the transient chirp of directly modulated distributed feedback (DFB) lasers. This pre-compensation technique only requires simply changing the injected current waveform, which in combination with phase space trajectories visualizes the effect of the technique in obtaining the optimum output from the laser. Experiments show that the pre-compensation technique can minimize the transient chirp of higher-order modulated signals and reduce the overshoot of the eye diagram. Furthermore, to further validate the effectiveness of the pre-compensation technique, the eye diagrams are compared and analyzed at the receiver side. The simulation results show that the current shaping technique achieves the desired laser output, which could improve the higher-order modulation performance of the DM-DD system.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-01-02 DOI: 10.1109/JQE.2025.3525580

Zihan Ren;Xiucheng Xu;Weiling Guo;Haoran Gao;Wanyu Xu;Jie Sun

{"title":"Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio","authors":"Zihan Ren;Xiucheng Xu;Weiling Guo;Haoran Gao;Wanyu Xu;Jie Sun","doi":"10.1109/JQE.2025.3525580","DOIUrl":"https://doi.org/10.1109/JQE.2025.3525580","url":null,"abstract":"In order to reduce the reverse leakage current of gallium nitride (GaN) p-i-n diode and improve the switching ratio of the device, the preparation process of GaN based quasi-vertical p-i-n diode was optimized from three aspects. First, the effects of metal and oxide etching masks on GaN step etching were compared, and it was found that the device etched with metal nickel (Ni) mask had better positive characteristics than silicon dioxide (SiO2) mask. Secondly, sidewall treatment was used to repair the damaged sidewall after etching, and the repair mechanism was discussed. Finally, the passivation layer was prepared by low temperature and high temperature growth respectively, and the performance of the device under different process conditions was compared. After the optimization of the preparation process, the leakage current of the quasi-vertical p-i-n diode was reduced by three orders of magnitude compared with the control group. The optimized device exhibits an ideal factor n of 1.12, turn-on voltage (Von) of 3.34 V, specific on-resistance (Ron,sp) of 2.27 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2, positive and negative current density of 161.54 A/cm2 and <inline-formula> <tex-math>$2.55times 10^{-9}$ </tex-math></inline-formula> A/cm2, respectively, and a switching ratio of <inline-formula> <tex-math>$6.35times 10^{10}$ </tex-math></inline-formula>.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers 光子晶体表面发射激光器的线宽-功率积理论

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-30 DOI: 10.1109/JQE.2024.3524133

Hans Wenzel;Eduard Kuhn;Ben King;Paul Crump;Mindaugas Radziunas

引用次数: 0

2024 Index IEEE Journal of Quantum Electronics Vol. 60 量子电子学学报，第60卷

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-23 DOI: 10.1109/JQE.2024.3520776

引用次数: 0

Planar InGaAs Avalanche Photodiode With Multi-Stage InAlAs/InAlGaAs Multiplication Structure 具有多级InAlAs/InAlGaAs倍增结构的平面InGaAs雪崩光电二极管

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-11 DOI: 10.1109/JQE.2024.3514814

Qi Wang;Yingjie Ma;Bowen Liu;Runze Xia;Guixue Zhang;Yi Gu;Xue Li

引用次数: 0

Ultrafast Photodiodes With High Saturation Power Based on an Automated Intelligent Design System 基于自动化智能设计系统的高饱和功率超快光电二极管

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-09 DOI: 10.1109/JQE.2024.3512436

Junjing Huang;Xiaofeng Duan;Kai Liu;Yongqing Huang;Xiaomin Ren

引用次数: 0

Intradot Relaxation of Carriers and Modulation Bandwidth in Quantum Dot Lasers With Double Asymmetric Barrier Layers 双非对称势垒层量子点激光器载流子的点内弛豫和调制带宽

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3512435

Cody Hammack;Levon V. Asryan

{"title":"Intradot Relaxation of Carriers and Modulation Bandwidth in Quantum Dot Lasers With Double Asymmetric Barrier Layers","authors":"Cody Hammack;Levon V. Asryan","doi":"10.1109/JQE.2024.3512435","DOIUrl":"https://doi.org/10.1109/JQE.2024.3512435","url":null,"abstract":"Electron-hole recombination outside of a quantum-confined active region presents a major challenge in conventional injection lasers. Double asymmetric barrier layers (DABLs) flanking the active region should efficiently suppress this parasitic recombination. One of the challenges still remaining in DABL lasers is the presence of excited states in the active region. In this work, the impact of such states in quantum dots (QDs) on static and dynamic characteristics of DABL QD lasers is examined. The most dramatic case is considered where carriers can only be captured into the QD excited state before decaying to the ground state and thus contributing to lasing. We show that there exist optimum values for the DC component of the injection current, QD surface density, and cavity length that maximize the laser modulation bandwidth. The maximum bandwidth itself is strongly controlled by intradot relaxation of carriers—while it remains almost unchanged at the excited-to-ground state relaxation times shorter than 0.01 ps, it drops considerably for longer relaxation times in the considered structures. A strict control of the parameters is thus essential in DABL QD lasers to increase their modulation bandwidth.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Guest Editorial JQE Special Issue Dedicated to the 24th European Conference on Integrated Optics 第24届欧洲集成光学会议特刊

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3484048

Sonia M. García-Blanco;Lantian Chang;Pablo Sanchis

引用次数: 0

IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501783

引用次数: 0