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IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-03-20 DOI: 10.1109/JQE.2025.3553339

引用次数: 0

Gain and Threshold Improvements of 1300 nm Lasers Based on InGaAs/InAlGaAs Superlattice Active Regions 基于 InGaAs/InAlGaAs 超晶格有源区的 1300 nm 激光器的增益和阈值改进

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-03-19 DOI: 10.1109/JQE.2025.3553022

Andrey Babichev;Evgeniy Pirogov;Maksim Sobolev;Sergey Blokhin;Yuri Shernyakov;Mikhail Maximov;Andrey Lutetskiy;Nikita Pikhtin;Leonid Karachinsky;Innokenty Novikov;Anton Egorov;Si-Cong Tian;Dieter Bimberg

{"title":"Gain and Threshold Improvements of 1300 nm Lasers Based on InGaAs/InAlGaAs Superlattice Active Regions","authors":"Andrey Babichev;Evgeniy Pirogov;Maksim Sobolev;Sergey Blokhin;Yuri Shernyakov;Mikhail Maximov;Andrey Lutetskiy;Nikita Pikhtin;Leonid Karachinsky;Innokenty Novikov;Anton Egorov;Si-Cong Tian;Dieter Bimberg","doi":"10.1109/JQE.2025.3553022","DOIUrl":"https://doi.org/10.1109/JQE.2025.3553022","url":null,"abstract":"A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6 cm−1), low transparency current density of ~500 A/cm2, together with 46 cm−1 modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained In0.74Ga0.26As/In0.53Al0.25Ga0.22As superlattice. Characteristic temperatures <inline-formula> <tex-math>$T_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$T_{1}$ </tex-math></inline-formula> were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Longitudinal Mode Ytterbium-Doped Fiber Laser Using Four 2 × 2 Fiber Couplers for Multiple Subring Ring Cavities 使用四个 2 × 2 光纤耦合器的多子环环腔单纵模掺镱光纤激光器

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-03-07 DOI: 10.1109/JQE.2025.3548944

Zi Wang;Brian Pamukti;Fan-Chang Meng;Shien-Kuei Liaw;Chien-Hung Yeh;Jem-Kun Chen

引用次数: 0

Two- and Three-Photon Pumped Regular and Random Lasing Behaviors in a Scattering Dye Solution With Suspended Polystyrene Microspheres 双光子和三光子泵浦聚苯乙烯微球散射染料溶液中的规则和随机激光行为

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-03-06 DOI: 10.1109/JQE.2025.3548946

Guang S. He

{"title":"Two- and Three-Photon Pumped Regular and Random Lasing Behaviors in a Scattering Dye Solution With Suspended Polystyrene Microspheres","authors":"Guang S. He","doi":"10.1109/JQE.2025.3548946","DOIUrl":"https://doi.org/10.1109/JQE.2025.3548946","url":null,"abstract":"Regular and random lasing properties in a multiphoton active and highly scattering dye solution containing polystyrene microspheres of 366-nm diameter have been experimentally studied. Using 100-fs laser pulses of wavelength 790 nm and 1300 nm as the two- and three-photon excitation sources, the frequency-upconversion regular lasing of ~610 nm wavelength can be generated along both the forward and backward directions, characterized by high directionality, higher spectral intensity, and remarkable spectral narrowing. In the meantime, the random lasing can also be observed along all other directions, characterized by only spectral narrowing but with much lower spectral brightness. The spectral brightness ratio between the forward regular lasing and the random lasing is (<inline-formula> <tex-math>$10^{4}$ </tex-math></inline-formula>-<inline-formula> <tex-math>$10^{5}$ </tex-math></inline-formula>):1. Comparing to the input pump beam of ~3 mm diameter and divergence angle of <inline-formula> <tex-math>$theta _{0}~approx ~0.9$ </tex-math></inline-formula> mrad, the forward lasing beam size and divergence angle were ~7 mm and ~(3-4) <inline-formula> <tex-math>$theta _{0}$ </tex-math></inline-formula>, whereas the corresponding parameters were ~5 mm and <inline-formula> <tex-math>$sim 1.5~theta _{0}$ </tex-math></inline-formula> for the backward lasing beam, indicating the phase-conjugation property of the latter.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Kerr Microcombs in Integrated Waveguide Ring Resonators Enabled by Graphene Nonlinearity 石墨烯非线性实现集成波导环形谐振器中的克尔微梳

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-02-26 DOI: 10.1109/JQE.2025.3546142

Alexandros Pitilakis;Emmanouil E. Kriezis

引用次数: 0

Generating Narrow Bandwidth Pulses in an All-Fiber Figure-9 Mode-Locked Fiber Laser 全光纤图9锁模光纤激光器窄带宽脉冲的产生

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-02-13 DOI: 10.1109/JQE.2025.3541951

Xinru Cao;Zhi Cheng;Yatan Xiong;Xuan Li;Qing Ye;Zhiyuan Guo;Yan Feng;Jiaqi Zhou

引用次数: 0

Numerical Investigation of 1662 nm Holmium-Doped Fiber Lasers Enabled by a 751 nm Fiber Laser Pump 751 nm光纤激光泵浦驱动1662 nm掺钬光纤激光器的数值研究

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-02-11 DOI: 10.1109/JQE.2025.3540738

Shihang Xu;Yuan Chen;Yani Lin;Xindie Chen;Kaiqi Xu;Wensong Li

{"title":"Numerical Investigation of 1662 nm Holmium-Doped Fiber Lasers Enabled by a 751 nm Fiber Laser Pump","authors":"Shihang Xu;Yuan Chen;Yani Lin;Xindie Chen;Kaiqi Xu;Wensong Li","doi":"10.1109/JQE.2025.3540738","DOIUrl":"https://doi.org/10.1109/JQE.2025.3540738","url":null,"abstract":"In this study, we present a novel fiber laser that employs self-pumping from internal laser transitions to induce inversion in other transitions. Using the <inline-formula> <tex-math>${}^{5}mathrm{F}_{4} + ^{5}$ </tex-math></inline-formula>S<inline-formula> <tex-math>$_{2}to ^{5}$ </tex-math></inline-formula>I5 laser transition at 1354 nm to populate the 5I5 level, the cascade laser oscillation at 1662 nm (<inline-formula> <tex-math>${}^{5}mathrm{I}_{5}to ^{5}$ </tex-math></inline-formula>I7) in Ho3+-doped ZrF4 (Ho3+: ZrF4) fiber was investigated. A practical design of the cascade laser, which is pumped by a 751 nm fiber laser, is determined by modeling it using an eight-level rate equation system that involves experimental spectroscopic parameters. By utilizing a 1.3-m-long Ho3+: ZrF4 fiber with a dopant concentration of 0.1 mol.% and assuming a pump power of 10 W launched into the fiber’s core, the simulation results show that this cascade system can achieve a slope efficiency of 38.9% and a maximum output power of 2.94 W. The result obtained prompts the development of a 1662 nm fiber laser that is based on a commercially available ZrF4 fiber. This laser has potential for a variety of applications, including telecommunications, gas sensing, multiphoton fluorescence microscopy, and pump sources.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarization-Maintaining Fiber With Uniform Doping Concentration Supporting 10 Weakly Coupled Modes Designed by Swarm Intelligence 采用群智能设计的支持10种弱耦合模式的均匀掺杂浓度保偏光纤

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-02-10 DOI: 10.1109/JQE.2025.3540737

Gu Zhenyu;Ning Tigang;Pei Li;Ye Xiao;Hu Zhouyi;Li Jing;Guo Hao;Zheng Jingjing;Wang Jianshuai

{"title":"Polarization-Maintaining Fiber With Uniform Doping Concentration Supporting 10 Weakly Coupled Modes Designed by Swarm Intelligence","authors":"Gu Zhenyu;Ning Tigang;Pei Li;Ye Xiao;Hu Zhouyi;Li Jing;Guo Hao;Zheng Jingjing;Wang Jianshuai","doi":"10.1109/JQE.2025.3540737","DOIUrl":"https://doi.org/10.1109/JQE.2025.3540737","url":null,"abstract":"In this study, we propose a polarization-maintaining few-mode fiber (PM-FMF) with a uniform doping concentration, capable of supporting up to 10 weakly coupled modes. The fiber features a simple structure with a perforated core, designed using a particle swarm optimization (PSO) algorithm. The proposed design achieves a minimum effective refractive index difference (<inline-formula> <tex-math>$Delta n_{text {eff}}$ </tex-math></inline-formula>) of approximately <inline-formula> <tex-math>$3.819 times 10^{-4}$ </tex-math></inline-formula> at 1550 nm, ensuring great mode isolation. Furthermore, the structure demonstrates robust bending resistance, with key parameters optimized to mitigate mode coupling and confinement losses. Error analyses reveal the fiber’s tolerance to fabrication imperfections, including core size, refractive index, and air-hole displacement. This design holds great potential for high-capacity, short-reach optical communication systems, such as data centers. The findings provide valuable insights for designing next-generation optical fibers with low complexity and enhanced performance.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shaping Current Accurately to Suppress the Transient Chirp for Multi-Level PAM Signals of Directly Modulated DFB Lasers 精确整形电流抑制直接调制DFB激光器多级PAM信号的瞬态啁啾

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-01-08 DOI: 10.1109/JQE.2025.3527439

Qing-An Ding;Meiyu Jiang;Qun Niu;Jiali Ren;Liuge Du;Chunyan Liu;Fangyuan Yang;Ziyang Wang;Jinghao Lu

{"title":"Shaping Current Accurately to Suppress the Transient Chirp for Multi-Level PAM Signals of Directly Modulated DFB Lasers","authors":"Qing-An Ding;Meiyu Jiang;Qun Niu;Jiali Ren;Liuge Du;Chunyan Liu;Fangyuan Yang;Ziyang Wang;Jinghao Lu","doi":"10.1109/JQE.2025.3527439","DOIUrl":"https://doi.org/10.1109/JQE.2025.3527439","url":null,"abstract":"Low-cost direct modulation direct detection (DM-DD) systems in optical communications are severely limited by transient chirps when adopting higher-order modulation formats to meet the high-capacity transmission. To break through this constraint, a shaping current waveform technique combined with multi-level pulse amplitude modulation (PAM) is proposed to suppress the transient chirp of directly modulated distributed feedback (DFB) lasers. This pre-compensation technique only requires simply changing the injected current waveform, which in combination with phase space trajectories visualizes the effect of the technique in obtaining the optimum output from the laser. Experiments show that the pre-compensation technique can minimize the transient chirp of higher-order modulated signals and reduce the overshoot of the eye diagram. Furthermore, to further validate the effectiveness of the pre-compensation technique, the eye diagrams are compared and analyzed at the receiver side. The simulation results show that the current shaping technique achieves the desired laser output, which could improve the higher-order modulation performance of the DM-DD system.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio 优化准垂直GaN p-i-n二极管制备工艺以减少反漏和提高开关比

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-01-02 DOI: 10.1109/JQE.2025.3525580

Zihan Ren;Xiucheng Xu;Weiling Guo;Haoran Gao;Wanyu Xu;Jie Sun

{"title":"Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio","authors":"Zihan Ren;Xiucheng Xu;Weiling Guo;Haoran Gao;Wanyu Xu;Jie Sun","doi":"10.1109/JQE.2025.3525580","DOIUrl":"https://doi.org/10.1109/JQE.2025.3525580","url":null,"abstract":"In order to reduce the reverse leakage current of gallium nitride (GaN) p-i-n diode and improve the switching ratio of the device, the preparation process of GaN based quasi-vertical p-i-n diode was optimized from three aspects. First, the effects of metal and oxide etching masks on GaN step etching were compared, and it was found that the device etched with metal nickel (Ni) mask had better positive characteristics than silicon dioxide (SiO2) mask. Secondly, sidewall treatment was used to repair the damaged sidewall after etching, and the repair mechanism was discussed. Finally, the passivation layer was prepared by low temperature and high temperature growth respectively, and the performance of the device under different process conditions was compared. After the optimization of the preparation process, the leakage current of the quasi-vertical p-i-n diode was reduced by three orders of magnitude compared with the control group. The optimized device exhibits an ideal factor n of 1.12, turn-on voltage (Von) of 3.34 V, specific on-resistance (Ron,sp) of 2.27 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2, positive and negative current density of 161.54 A/cm2 and <inline-formula> <tex-math>$2.55times 10^{-9}$ </tex-math></inline-formula> A/cm2, respectively, and a switching ratio of <inline-formula> <tex-math>$6.35times 10^{10}$ </tex-math></inline-formula>.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0