IEEE Journal of Quantum Electronics最新文献

{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2026.3708958","DOIUrl":"https://doi.org/10.1109/JQE.2026.3708958","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"0001601-0001601"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627751","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148626467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Next Generation 1024×1024 Individually Addressable Mid-Infrared LED Arrays Based on Cascaded W-Superlattice Emitters","authors":"John P. Prineas;Matthew Z. Bellus;Alexander C. Walhof;Logan M. Nichols;David A. Montealegre;Michael J. Grzesik;Rodney T. McGee;Hamzah F. Ahmed;Fouad Kiamilev","doi":"10.1109/JQE.2026.3675506","DOIUrl":"https://doi.org/10.1109/JQE.2026.3675506","url":null,"abstract":"Mid-infrared light-emitting diodes (IRLEDs) offer high modulation bandwidth, high apparent radiance, and analog grayscale operation, making them attractive for large-area patterned emitters and high-speed illumination systems. However, their practical use in dense arrays has been limited by low wall-plug efficiency and thermal performance. Here we demonstrate a <inline-formula> <tex-math>$1024times 1024$ </tex-math></inline-formula>, <inline-formula> <tex-math>$24~mu $ </tex-math></inline-formula>m pitch mid-infrared IRLED array based on a 16-stage cascaded W-superlattice emitter, quadrupling the pixel count of prior <inline-formula> <tex-math>$512times 512$ </tex-math></inline-formula> arrays. Improvements in superlattice design, backside roughening, and hybridization enabled >99% operability, with apparent temperatures of >1300 K for the full array, <inline-formula> <tex-math>$approx 1700$ </tex-math></inline-formula> K in a quadrant, and >2000 K in process evaluation chips (PEC) devices, and wall-plug efficiencies up to ~1% at low injection. Advances in system control electronics and nanosecond-scale pixel response enabled >400 Hz frame rates with 11-bit radiance resolution. System performance is primarily limited by thermal droop under high drive, but synchronous operation enabled full-array output to 300 K with <1%>2500 K apparent temperature for 1% of pixels with enhanced cooling and active thermal management. These results establish large-format IRLED emitter arrays as a scalable platform for high-speed infrared illumination and pattern generation and show a path toward further performance gains through improved wall-plug efficiency and thermal control.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"3200111-3200111"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complex Analysis of the K-Surface for Hyperbolic Metamaterials","authors":"Minchan Kim;Haesung Lee;Yoonchan Jeong","doi":"10.1109/JQE.2026.3691680","DOIUrl":"https://doi.org/10.1109/JQE.2026.3691680","url":null,"abstract":"Hyperbolic metamaterials (HMMs) are often characterized by hyperbolic k-surfaces via the effective medium theory (EMT), which theoretically allow wavevectors of infinite size to exist. However, such infinite-sized wavevectors are physically unrealistic or contradict the <inline-formula> <tex-math>$a$ </tex-math></inline-formula> <italic>priori</i> hypothesis of the EMT that the geometric variation of the composite medium of interest must be on a subwavelength scale. We here propose a simple method of describing an HMM in terms of closed, finite-sized k-surfaces, using a complex-permittivity-tensor formalism. Based upon this, we consider two typical structures: an Ag/TiO₂ multilayer for a uniaxial HMM and a Si/SiO₂ multilayer with Ag nanowires for a biaxial HMM. The formalism yields two closed surfaces, i.e., <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>- and <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-surfaces, which represent the loci of the real and imaginary parts of the complex wavevector. They also undergo continuous topological transitions in shape due to chromatic dispersion. These contrast with the unphysical properties of the conventional hyperbolic k-surfaces, including the unboundedness of the wavevectors in the asymptotic directions and, consequently, the singularities in their topological transitions for chromatic dispersion. We quantify the bounded characteristics of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-surface using the maximum normalized wavevector magnitude and the polar angle <inline-formula> <tex-math>${theta }_{max}$ </tex-math></inline-formula> at which it occurs. The ratio between <inline-formula> <tex-math>${theta }_{max}$ </tex-math></inline-formula> and the asymptotic angle of the corresponding conventional hyperbolic k-surface can be as small as 0.826 and 0.923 for the uniaxial and biaxial HMMs, respectively. The boundedness of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-surface implies that there is a lower limit to the internal wavelength, thus resolving the inconsistency between the conventional k-surface formalism and the EMT.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"7300116-7300116"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11513522","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2026 List of Reviewers","authors":"","doi":"10.1109/JQE.2026.3693931","DOIUrl":"https://doi.org/10.1109/JQE.2026.3693931","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"0700102-0700102"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11640385","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal of Quantum Electronics Publication Information","authors":"","doi":"10.1109/JQE.2026.3686525","DOIUrl":"https://doi.org/10.1109/JQE.2026.3686525","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"0001401-0001401"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11627750","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148628353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Relative Intensity Noise of Datacom Multimode VCSELs With Different Aperture Shapes","authors":"Bedouin A. Sassiya;Michał Wasiak;Tomasz Czyszanowski;Rainer Michalzik","doi":"10.1109/JQE.2026.3690062","DOIUrl":"https://doi.org/10.1109/JQE.2026.3690062","url":null,"abstract":"Relative intensity noise (RIN) is a key performance-limiting factor in multimode vertical-cavity surface-emitting lasers (VCSELs), particularly for high-speed data communication applications. This work investigates the influence of oxide aperture geometry on RIN behavior, combining experimental measurements and full-vectorial optical simulations. Frequency-resolved RIN (<inline-formula> <tex-math>$text {RIN}_{text {f}}$ </tex-math></inline-formula>) and optical spectra were analyzed across varying injection currents and temperatures for devices with circular and elliptical apertures. The results show that circular apertures exhibit increased RIN due to mode beating among quasi-degenerate transverse modes. Introducing rotational asymmetry in the aperture effectively increases the mode spacing, thereby reducing RIN. However, residual noise peaks were observed, attributed to four-wave mixing (FWM) interactions among separated modes. The experimental findings were strongly supported by 3-D optical simulations using the PLaSK solver, confirming the impact of aperture-induced mode control on noise suppression. This study provides valuable insight into VCSEL design optimization for reduced RIN and improved high-speed performance.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"2400108-2400108"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Section Passively Mode-Locked Laser as a Test for Amplification and Absorption Parameters of a Quantum Well-Based InP Optical Amplifier at 1300 nm","authors":"Joel Hazan;Stefano Tondini;Aser Nassar;Kevin A. Williams;Erwin A. J. M. Bente","doi":"10.1109/JQE.2024.3372583","DOIUrl":"10.1109/JQE.2024.3372583","url":null,"abstract":"A quantum well based semiconductor optical amplifier (SOA) compatible with a butt-joint active passive integration scheme at 1300 nm is tested in a monolithic passively mode locked laser operating at 1300 nm. The different laser dynamics are investigated in detail and the gain and absorption parametrization of the SOA as used in a laser simulator is described. Simulation outcomes are compared with the characterization results of a passively mode-locked two-section laser that was realized using a fully active quantum well layer stack. The different laser dynamic regimes are identified by recording light intensity characteristics for a range of operating conditions with 50 GHz bandwidth in real time as well as the high frequency electrical spectra from a photodetector. Passive mode-locking has been achieved with a 20.4 GHz repletion rate with a 0.32% detuning of repetition rate by increasing the current, where a 0.25% detuning was predicted by the parametrized model. The stepped heterodyne technique has been used to measure the output pulse duration. A FWHM of 1.0 ps has been recorded after propagating for 110 m in standard single mode fiber. The phase spectrum with a maximum of 2.5 radians variation within the 6 nm frequency comb has been obtained. This value agrees with the simulation output, which models the amplification and the absorption out of this two-section laser. Q-switched mode-locking behavior is observed from the time traces. The measurements of the q-switching dynamics reveal a stepped behavior in the relaxation oscillations as function of current injected into the semiconductor optical amplifier, with the presence of an exotic dynamical system with different periodicities at the transition currents, that cannot be predicted by the model. The fit of the relaxation oscillation with the Q-switching self-pulsation frequencies, reveals a differential gain that is in-line with the parameter used in the simulations.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"1300210-1300210"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10458683","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140044365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Modeling and Parameter Estimation of Erbium-Doped Fiber Ring Laser Based on Physics-Informed Neural Network","authors":"Linkun Chen;Rui Jin;Chao Wang","doi":"10.1109/JQE.2026.3701991","DOIUrl":"https://doi.org/10.1109/JQE.2026.3701991","url":null,"abstract":"A framework for the theoretical modeling and parameter estimation of erbium-doped fiber ring laser (EDFRL) is proposed based on physics-informed neural network (PINN). By introducing multi-dimensional parameterized input architecture, numerical transformation mapping and physics-consistent constraint strategy, this framework effectively addresses numerical stiffness and nonseparable boundary conditions in the closed-loop laser system. On this basis, forward prediction and inverse retrieval models were established. Within a multi-dimensional parameter space, the forward model exhibits a superior advantage in global generalization and computational efficiency, achieving high prediction fidelity (<inline-formula> <tex-math>$boldsymbol {R^{2} gt 0.99}$ </tex-math></inline-formula>) and a maximum speedup by four orders of magnitude. Simultaneously, physical parameters were effectively retrieved from sparse data by the inverse model. Therefore, a collaborative workflow can be established, offering a novel and physically rigorous paradigm for the modeling, optimization, and calibration of nonlinear laser systems including EDFRL.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"1600709-1600709"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrated Fiber Optic Sensor Based on Microfiber Interferometer and FBG With Strain–Temperature Matrix Decoupling Calibration","authors":"Yanfei Wang;Wenxia Liu;Miao Liu;Xintong Li;Keyao Hao;Dandan Sun","doi":"10.1109/JQE.2026.3693189","DOIUrl":"https://doi.org/10.1109/JQE.2026.3693189","url":null,"abstract":"This study proposes a novel fiber optic strain sensor employing a cascaded configuration of a microfiber interferometer (MFI) and a fiber Bragg grating (FBG). The MFI generates interferometric spectra through mode coupling effects and exhibits high sensitivity to external strain, while the FBG achieves selective reflection of specific wavelengths based on periodic refractive index modulation and serves to eliminate temperature cross-sensitivity. Experimental characterization shows that the sensor exhibits a strain sensitivity of −0.0257 nm/<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula> (coefficient of determination R<inline-formula> <tex-math>${}^{2} =0.9989$ </tex-math></inline-formula>), the strain sensitivity of the FBG is 0.7935 pm/<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula> (coefficient of determination R<inline-formula> <tex-math>${}^{2} =0.9898$ </tex-math></inline-formula>), with a strain measurement range of 0–<inline-formula> <tex-math>$359.3~mu varepsilon $ </tex-math></inline-formula>. Regarding temperature response, the temperature sensitivities of the MFI and FBG are −0.0396 nm/° C (R<inline-formula> <tex-math>${}^{2} =0.9792$ </tex-math></inline-formula>) and 0.0111 nm/° C (R<inline-formula> <tex-math>${}^{2} =0.9773$ </tex-math></inline-formula>), respectively, demonstrating a good linear response within a range of 40° C - 65° C. Furthermore, a matrix calibration algorithm is developed to effectively achieve precise decoupling of strain and temperature, compensating for temperature cross-sensitivity. The sensor combines the advantages of compact structure, high sensitivity, and excellent linearity. The strain-temperature composite sensing characteristics of this proposed sensor can provide strong support for the detection of engineering structure state and the monitoring of industrial environments with significant thermal effects.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 4","pages":"7700108-7700108"},"PeriodicalIF":1.9,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2026.3686533","DOIUrl":"https://doi.org/10.1109/JQE.2026.3686533","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 3","pages":"C4-C4"},"PeriodicalIF":2.1,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11540226","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148171708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}