InAs/InP量子Dash Ridge激光器温度函数的数值模拟

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2025-03-22 DOI:10.1109/JQE.2025.3572859

Sebastian W. Schaefer;Ras-Jeevan K. Obhi;D. Paige Wilson;Philip J. Poole;Jiaren R. Liu;Christopher E. Valdivia;Trevor Hall;Zhenguo Lu;Karin Hinzer

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引用次数: 0

摘要

基于InAs/InP量子破折号的单片锁模二极管激光器为谱梳生成提供了一种廉价而高效的平台。这些梳用于光纤互连中的密集波分复用方案和计量中的频率参考。根据应用的不同，集成可能需要在高温下操作，从而降低光转换效率。本文所研究的激光器为单片1.55~\mu $ m的InAs/InP量子破碎/切割脊波导激光器。我们展示了温度下的性能，并使用交叉轻微PICS3D展示了所述器件的数值光电建模。我们讨论了当使用已建立的工业建模工具来模拟具有复杂物理特性的新设备时出现的限制。虽然该模型有可能预测主要与载流子输运相关的一组狭窄的属性，但它的局限性表明，需要使用更多定制的模型来捕捉模式锁定的复杂物理。

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Numerical Modeling of InAs/InP Quantum Dash Ridge Lasers as a Function of Temperature

Monolithic mode-locked diode lasers based on InAs/InP quantum dashes offer an inexpensive and efficient platform for spectral comb generation. These combs are used in dense wavelength division multiplexing schemes within optical fiber interconnects and frequency references in metrology. Depending on the application, integration can require operation at elevated temperatures, reducing light conversion efficiency. The lasers studied in this work are monolithic

$1.55~\mu $

m InAs/InP quantum dash cleave/cleave ridge waveguide lasers. We demonstrate performance over temperature and show numerical optoelectronic modelling of said device using Crosslight PICS3D. We discuss the limitations that arise when using an established industry modelling tool to simulate novel devices with complex physics. While the model has potential to predict of a narrow set of properties tied predominantly to carrier transport, its limitations point towards using more bespoke models to capture the complex physics of mode-locking.

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.