发布求助
文献互助 智能选刊 最新文献

IEEE Journal of Quantum Electronics最新文献

筛选
英文 中文
Inverse Design of Quasi-Bound States in the Continuum Absorber 连续吸收器中准束缚态的逆设计
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-29 DOI: 10.1109/JQE.2024.3395127
Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang
{"title":"Inverse Design of Quasi-Bound States in the Continuum Absorber","authors":"Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang","doi":"10.1109/JQE.2024.3395127","DOIUrl":"https://doi.org/10.1109/JQE.2024.3395127","url":null,"abstract":"In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-11"},"PeriodicalIF":2.5,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140820418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of Myrtus communis L. extract on nephrolithiasis model in rats. 香桃木提取物对大鼠肾结石模型的影响
IF 1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-24 eCollection Date: 2024-01-01 DOI: 10.14744/nci.2023.09068
Busra Ertas, Dogancan Dorucu, Oznur Gulerturk, Ali Sen, Ozge Cevik, Sule Cetinel, Pinar Eker, Asuman Akgun, Emre Tarik Sener, Goksel Sener
{"title":"The effect of <i>Myrtus communis</i> L. extract on nephrolithiasis model in rats.","authors":"Busra Ertas, Dogancan Dorucu, Oznur Gulerturk, Ali Sen, Ozge Cevik, Sule Cetinel, Pinar Eker, Asuman Akgun, Emre Tarik Sener, Goksel Sener","doi":"10.14744/nci.2023.09068","DOIUrl":"10.14744/nci.2023.09068","url":null,"abstract":"<p><strong>Objective: </strong>Nephrolithiasis is a common urological disease that can lead to renal failure. Oxidative stress has been shown to be a contributing factor for nephrolithiasis and many agents have been studied to prevent and treat oxidative stress-related nephrolithiasis and renal damage. <i>Myrtus communis</i> (MC) extract has been shown to be an important antioxidant in different animal models. In this study, MC extract was administered preventively or therapeutically to rats with kidney stones, and its effectiveness was investigated.</p><p><strong>Methods: </strong>Wistar albino rats were divided into four groups (n=8); control (C), ethylene glycol (EG), EG+preventive MC, and EG+curative MC groups. The nephrolithiasis model was created by adding 0.75% EG to drinking water for 8 weeks. Ultimately, 24-hour urine was collected to measure calcium, citrate, and creatinine levels. After decapitation, kidney tissues were harvested for histological analyses, measurement of osteopontin and 8-hydroxydeoxyguanosine (8-OHdG) levels, and N-acetyl-β-glucosaminidase (NAG), myeloperoxidase (MPO) and caspase-3 activities.</p><p><strong>Results: </strong>In 24-hour urine samples, calcium, citrate and creatinine levels were decreased in the EG group, while oxalate levels were increased and in treatment groups these parameters returned to control levels. MPO, 8-OHdG, caspase-3 and NAG activity were significantly increased in tissue and these changes were reversed in both MC groups. Histological findings also supported the biochemical parameters.</p><p><strong>Conclusion: </strong>MC can reduce oxidative stress and histopathological changes in kidney tissues in rat nephrolithiasis model when used as either a preventive or therapeutic agent. If supported with further clinical trials, MC might have clinical implications in preventing oxidative renal cell injury and ultimately kidney stone formation.</p>","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"44 1","pages":"91-98"},"PeriodicalIF":1.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11095334/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84293637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method 基于 k 域分析方法的氮化镓发光二极管二维和三维空间光学模拟比较
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-15 DOI: 10.1109/JQE.2024.3389043
Tianwen Xia;Le Wang;Enguo Chen;Zhonghang Huang;Chunli Yan;Dalei Wu;Q. Frank Yan;Jie Sun
{"title":"Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method","authors":"Tianwen Xia;Le Wang;Enguo Chen;Zhonghang Huang;Chunli Yan;Dalei Wu;Q. Frank Yan;Jie Sun","doi":"10.1109/JQE.2024.3389043","DOIUrl":"10.1109/JQE.2024.3389043","url":null,"abstract":"Earlier researchers have designed nanostructures such as stripe gratings (SG) or photonic crystals array (PhCA) to improve the light extraction efficiency (LEE) of light-emitting diodes (LEDs) by the diffraction mechanism. However, through k-domain method and simulation analysis, this letter finds that although SG perform well in 2D simulation, their effect drops sharply in 3D space, a phenomenon being overlooked in the community. This letter explains the diffraction mechanism of LEDs with nanostructure in 2D and 3D space through K-domain analysis, and reveals the inaccuracy of simulating LED with SG in 2D space. Unlike SG, PhCA offers diffraction in two directions and may be more suitable for LEDs.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parallel Sensing With Multiple Microrings on a Single Bus Waveguide 在单总线波导上使用多个微镜进行并行传感
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-08 DOI: 10.1109/JQE.2024.3386101
Zheng Zheng;Ward A. P. M. Hendriks;S. M. García-Blanco;Lantian Chang
{"title":"Parallel Sensing With Multiple Microrings on a Single Bus Waveguide","authors":"Zheng Zheng;Ward A. P. M. Hendriks;S. M. García-Blanco;Lantian Chang","doi":"10.1109/JQE.2024.3386101","DOIUrl":"10.1109/JQE.2024.3386101","url":null,"abstract":"We present a multiple microrings channel integrated chip and develop a signal processing method that enables parallel sensing with this chip. We utilize fast Fourier transform (FFT) and inverse fast Fourier transform (IFFT) to extract signals from different rings with different free spectra ranges (FSR). We verify this algorithm with temperature and solution sensing experiments. Compared with the conventional single-ring-single-resonance method, it shows improvements in up to 8 multi-channels capability and higher time resolution with the same experimental hardware.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-5"},"PeriodicalIF":2.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors 利用 PIN InGaAs 光电探测器中 1/f 噪声-暗电流之间的相关性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-02 DOI: 10.1109/JQE.2024.3384240
Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu
{"title":"Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors","authors":"Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu","doi":"10.1109/JQE.2024.3384240","DOIUrl":"10.1109/JQE.2024.3384240","url":null,"abstract":"High performance InGaAs photodetectors are highly desired for the ever-growing photoelectric industry. Despite maturity at the production level, the underlying causes of noise and dark current need clarification for further improvement. We studied the dark current and noise characteristics in PIN In0.53Ga0.47As photodiodes with different mesa sizes. The dark current noise exhibits a clear spectral 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 shape in all conditions. The results at low temperatures suggest that the dark current is dominated by the sidewall shunt paths while generation-recombination dark current comes into play at high temperatures. The noise intensity follows the squared leakage current in the temperature range of 100-240 K. Since the extracted activation energy of 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 noise approximates that of the surface leakage current, suggesting that the surface leakage current may be the primary factor of the 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 noise.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-5"},"PeriodicalIF":2.5,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics information for authors IEEE 期刊《量子电子学》为作者提供的信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399866
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3399866","DOIUrl":"https://doi.org/10.1109/JQE.2024.3399866","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10541325","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399890
{"title":"IEEE Journal of Quantum Electronics publication information","authors":"","doi":"10.1109/JQE.2024.3399890","DOIUrl":"https://doi.org/10.1109/JQE.2024.3399890","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10541324","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399864
{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2024.3399864","DOIUrl":"https://doi.org/10.1109/JQE.2024.3399864","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"C4-C4"},"PeriodicalIF":2.5,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10541881","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unconventional Computing Based on Four Wave Mixing in Highly Nonlinear Waveguides 基于高非线性波导中四波混合的非常规计算
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-27 DOI: 10.1109/JQE.2024.3405826
Kostas Sozos;Stavros Deligiannidis;Charis Mesaritakis;Adonis Bogris
{"title":"Unconventional Computing Based on Four Wave Mixing in Highly Nonlinear Waveguides","authors":"Kostas Sozos;Stavros Deligiannidis;Charis Mesaritakis;Adonis Bogris","doi":"10.1109/JQE.2024.3405826","DOIUrl":"10.1109/JQE.2024.3405826","url":null,"abstract":"In this work we numerically analyze a photonic unconventional accelerator based on the four-wave mixing effect in highly nonlinear waveguides. The proposed scheme can act as a fully analogue system for nonlinear signal processing directly in the optical domain. By exploiting the rich Kerr-induced nonlinearities, multiple nonlinear transformations of an input signal can be generated and used for solving complex nonlinear tasks. We first evaluate the performance of our scheme in the Santa-Fe chaotic time-series prediction. The true power of this processor is revealed in the all-optical nonlinearity compensation in an optical communication scenario where we provide results superior to those offered by strong machine learning algorithms with reduced power consumption and computational complexity. Finally, we showcase how the FWM module can be used as a reconfigurable nonlinear activation module being capable of reproducing characteristic functions such as sigmoid or rectified linear unit.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141165599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-26 DOI: 10.1109/JQE.2024.3379791
{"title":"IEEE Journal of Quantum Electronics publication information","authors":"","doi":"10.1109/JQE.2024.3379791","DOIUrl":"https://doi.org/10.1109/JQE.2024.3379791","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10480293","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140309981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信