IEEE Journal of Quantum Electronics最新文献

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Vertical Coupling Effect on Gain Bandwidth of Chirped InAs/InP Quantum Dot Structures 垂直耦合对啁啾 InAs/InP 量子点结构增益带宽的影响
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3357031
Gaowen Chen;Fujuan Huang;Xiupu Zhang
{"title":"Vertical Coupling Effect on Gain Bandwidth of Chirped InAs/InP Quantum Dot Structures","authors":"Gaowen Chen;Fujuan Huang;Xiupu Zhang","doi":"10.1109/JQE.2024.3357031","DOIUrl":"https://doi.org/10.1109/JQE.2024.3357031","url":null,"abstract":"Quantum dot (QD) devices are usually desired to have a broadband gain spectrum. An alternative solution to achieve a broadband gain in QD devices is to use multiple layers with different QD heights, which are stacked vertically, i.e. a chirped QD structure in the active region. In the chirped stacked QD structure, the vertical strain and electron coupling effect have a significant impact on the optical transition property and thus optical gain bandwidth. However, previous studies on the vertical coupling effect have mainly focused on uniformly stacked QD structures, and the chirped QD structures have not been investigated carefully. This work presents a detailed analysis of the vertical coupling effect in chirped QD structures (i.e. ascending and descending chirped structure) and its impact on the optical gain bandwidth of the active region. It is found that the descending chirped structure leads to a wider gain bandwidth, in particular at high current injection. A Fabry-Perot mode-locked laser with the descending chirped structure presents a better performance in pulse width and frequency comb lines compared to the ascending chirped structure.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139744753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hysteresis Behavior of External Cavity Quantum Cascade Lasers in the Strong Feedback Regime 强反馈机制下外腔量子级联激光器的滞后行为
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3362272
Jonas Schundelmeier;Quankui Yang;Stefan Hugger
{"title":"Hysteresis Behavior of External Cavity Quantum Cascade Lasers in the Strong Feedback Regime","authors":"Jonas Schundelmeier;Quankui Yang;Stefan Hugger","doi":"10.1109/JQE.2024.3362272","DOIUrl":"10.1109/JQE.2024.3362272","url":null,"abstract":"We experimentally investigate mode hops of a continuous-wave (cw) external cavity (EC) quantum cascade laser (QCL) in Littrow configuration, observing hysteresis for variations of either external cavity length, chip current, or grating angle. The results are compared with two different theoretical models. Simulation results suggest that hysteresis in EC-QCLs is caused by self-stabilization due to mode coupling.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-10"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering 利用内腔工程缩小垂直腔表面发射激光器线宽
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3362276
Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu
{"title":"Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering","authors":"Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu","doi":"10.1109/JQE.2024.3362276","DOIUrl":"10.1109/JQE.2024.3362276","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (\u0000<inline-formula> <tex-math>$sim $ </tex-math></inline-formula>\u00004000 cm\u0000<inline-formula> <tex-math>$^{-1}$ </tex-math></inline-formula>\u0000) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-29 DOI: 10.1109/JQE.2024.3355921
{"title":"IEEE Journal of Quantum Electronics publication information","authors":"","doi":"10.1109/JQE.2024.3355921","DOIUrl":"https://doi.org/10.1109/JQE.2024.3355921","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10415559","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139654259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics information for authors IEEE 期刊《量子电子学》为作者提供的信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-29 DOI: 10.1109/JQE.2024.3355915
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3355915","DOIUrl":"https://doi.org/10.1109/JQE.2024.3355915","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10415624","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139654802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-29 DOI: 10.1109/JQE.2024.3355917
{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2024.3355917","DOIUrl":"https://doi.org/10.1109/JQE.2024.3355917","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"C4-C4"},"PeriodicalIF":2.5,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10415626","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139654979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long-Wave Infrared ZnGeP2 Optical Parametric Oscillator With a Wide Tuning Range by Rotating a Diffraction Grating 通过旋转衍射光栅实现宽调谐范围的长波红外线 ZnGeP2 光参量振荡器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-19 DOI: 10.1109/JQE.2024.3356367
Hai Wang;Zhiyong Li;Juntao Tian;Lili Zhao;Rongqing Tan
{"title":"Long-Wave Infrared ZnGeP2 Optical Parametric Oscillator With a Wide Tuning Range by Rotating a Diffraction Grating","authors":"Hai Wang;Zhiyong Li;Juntao Tian;Lili Zhao;Rongqing Tan","doi":"10.1109/JQE.2024.3356367","DOIUrl":"https://doi.org/10.1109/JQE.2024.3356367","url":null,"abstract":"We report a ZnGeP\u0000<inline-formula> <tex-math>$_{mathbf {2}}$ </tex-math></inline-formula>\u0000 optical parametric oscillator (OPO) with a wide tuning range in the long-wave infrared. The OPO was pumped by a Ho: YLF laser with high peak power, and a resonate cavity with a diffraction grating was used. A tunable long-wave laser with the wavelength of 8.45-\u0000<inline-formula> <tex-math>$11.37~mu text{m}$ </tex-math></inline-formula>\u0000 was achieved by rotating the grating. Meanwhile, the linewidth was less than 61 nm at the wavelength within the tunable range from \u0000<inline-formula> <tex-math>$8.45~mu text{m}$ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$9.15~mu text{m}$ </tex-math></inline-formula>\u0000. When the wavelength of the idler light was \u0000<inline-formula> <tex-math>$8.84~mu text{m}$ </tex-math></inline-formula>\u0000, the maximum output energy was \u0000<inline-formula> <tex-math>$52.80~mu text{J}$ </tex-math></inline-formula>\u0000, and the peak power was 6.60 kW. The novel tuning method offers an effective way to realize a tunable long-wave source for stand-off gas concentration detection.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139744699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New SOA Design With Large Gain, Small Noise Figure, and High Saturation Output Power Level 具有大增益、小噪声系数和高饱和输出功率级的新型 SOA 设计
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-19 DOI: 10.1109/JQE.2024.3356366
Shuqi Yu;Antonin Gallet;Iosif Demirtzioglou;Sheherazade Lamkadmi Azouigui;Nayla El Dahdah;Romain Brenot
{"title":"New SOA Design With Large Gain, Small Noise Figure, and High Saturation Output Power Level","authors":"Shuqi Yu;Antonin Gallet;Iosif Demirtzioglou;Sheherazade Lamkadmi Azouigui;Nayla El Dahdah;Romain Brenot","doi":"10.1109/JQE.2024.3356366","DOIUrl":"https://doi.org/10.1109/JQE.2024.3356366","url":null,"abstract":"We introduce a semiconductor optical amplifier (SOA) chip with high gain (>40 dB) and high saturation power (>21 dBm) with moderate drive current (1.3A). A design model for optimizing the new dual-section SOA concept is presented. The model predictions are in very good agreement with the measurement results on fabricated chips. Using the gain and saturation output power product as the figure of merit, it shows the best-reported trade-off result so far. However, due to the slight degradation of the noise figure that ensued, an advanced design is introduced, enabling the optimization of the noise figure in addition to the gain and saturation output power.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139916640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of 1.7-μm and 2.4-μm Dual-Wavelength Pumped 4.3-μm Dysprosium-Doped Chalcogenide Fiber Lasers 1.7 μm 和 2.4 μm 双波长泵浦 4.3 μm 掺镝钙钛矿光纤激光器建模
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-08 DOI: 10.1109/JQE.2024.3350688
Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo
{"title":"Modeling of 1.7-μm and 2.4-μm Dual-Wavelength Pumped 4.3-μm Dysprosium-Doped Chalcogenide Fiber Lasers","authors":"Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo","doi":"10.1109/JQE.2024.3350688","DOIUrl":"10.1109/JQE.2024.3350688","url":null,"abstract":"A novel \u0000<inline-formula> <tex-math>$1.7 mu text{m}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 dual-wavelength pumping scheme for a \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium (Dy3+)-doped chalcogenide fiber laser was theoretically demonstrated. It was attributed to the \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 excited stated absorption (ESA, \u0000<inline-formula> <tex-math>$^{6}text{H}_{mathrm {13/2}} to ^{6}text{H}_{mathrm {9/2}},^{6}text{F}_{mathrm {11/2}}$ </tex-math></inline-formula>\u0000 transition). Theoretically, when the two pumps were 5 W and 2 W, respectively, a laser power of 1.5 W with an remarkable efficiency of 30.2% was obtained from the home-made Dy3+:Ga0.8As34.2Sb5S60 glass fiber with a loss coefficient of 3 dB/m and a Dy3+ concentration of \u0000<inline-formula> <tex-math>$3.67times 10^{25}$ </tex-math></inline-formula>\u0000 ions/m3. Results indicated that the dual-wavelength pumping scheme based on the gain fiber provides a potential way to \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium-doped chalcogenide fiber lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-Optical Feedback for (Nearly) All-Optical Detection 用于(几乎)全光学探测的电光反馈
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-08 DOI: 10.1109/JQE.2023.3348113
Tamir Weinstock;Ofer Amrani
{"title":"Electro-Optical Feedback for (Nearly) All-Optical Detection","authors":"Tamir Weinstock;Ofer Amrani","doi":"10.1109/JQE.2023.3348113","DOIUrl":"10.1109/JQE.2023.3348113","url":null,"abstract":"Electro-optical feedback circuit is presented and analyzed. The method realizes a closed-loop positive feedback by feeding the electrodes of a Mach-Zehnder interferometer with the voltage produced by its own detection circuit. In its basic form, it is shown to act as a multi-level opto-electric quantizer. The quantization behavior disclosed herein is realized via the opto-electric conversion process itself. The circuit is modeled by an equivalent electronic representation with which the static and dynamic behavior of the circuit is characterized. A component-level electro-optical simulation is included, supporting the theoretical results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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