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IEEE Journal of Quantum Electronics最新文献

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The Design and Characterization in Amplitude and Phase of a Compact 8-Channel Loop-Back AWG Based Integrated Comb Processor 基于集成梳状处理器的紧凑型 8 通道回环 AWG 的设计与振幅和相位特性分析
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-06 DOI: 10.1109/JQE.2024.3397644
L. Roel van der Zon;Luis A. Bru;Pascual Muñoz;Daniel Pastor
{"title":"The Design and Characterization in Amplitude and Phase of a Compact 8-Channel Loop-Back AWG Based Integrated Comb Processor","authors":"L. Roel van der Zon;Luis A. Bru;Pascual Muñoz;Daniel Pastor","doi":"10.1109/JQE.2024.3397644","DOIUrl":"10.1109/JQE.2024.3397644","url":null,"abstract":"This paper presents the design and characterization of an 8-channel integrated comb source spectral processor based on an arrayed-waveguide grating in loop-back configuration, with a channel spacing of 100 GHz. The arrayed waveguide grating has an unconventional mounting, for improved aberration and sidelobes. The design of the arrayed-waveguide grating, following a mathematical modeling method, is covered. The method presented gives an accurate result with the need for little computational power and no need for specific software. The devices, fabricated in a silicon nitride platform, are characterized for their spectral responses. The spectral processor is also characterized for both its amplitude modulation as well as the phase modulation. The phase modulation is characterized using optical frequency domain interferometry.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10521521","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140889282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm 测试基于量子阱的 InP 光放大器在 1300 纳米波长的放大和吸收参数的两段无源模式锁定激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-05 DOI: 10.1109/jqe.2024.3372583
J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente
{"title":"Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm","authors":"J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente","doi":"10.1109/jqe.2024.3372583","DOIUrl":"https://doi.org/10.1109/jqe.2024.3372583","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"5 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140044365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex Pulse Profile Optimization by Chromatic Dispersion Management in Coupled Opto-Electronic Oscillator Based on Semiconductor Optical Amplifier 通过基于半导体光放大器的耦合光电振荡器中的色散管理优化复杂脉冲轮廓
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-04 DOI: 10.1109/JQE.2024.3372575
Alexis Bougaud;Arnaud Fernandez;Aliou Ly;Stéphane Balac;Olivier Llopis
{"title":"Complex Pulse Profile Optimization by Chromatic Dispersion Management in Coupled Opto-Electronic Oscillator Based on Semiconductor Optical Amplifier","authors":"Alexis Bougaud;Arnaud Fernandez;Aliou Ly;Stéphane Balac;Olivier Llopis","doi":"10.1109/JQE.2024.3372575","DOIUrl":"10.1109/JQE.2024.3372575","url":null,"abstract":"An Ikeda map iterative numerical model completed with an analytical Gaussian analysis and experimental measurements of complex pulse profile and phase noise performance at 10 GHz are proposed. This work aims to study and optimize the chromatic dispersion of a fibered mode-locked laser (MLL) based on a semiconductor optical amplifier (SOA) as part of a coupled optoelectronic oscillator (COEO). We will demonstrate that a close to zero anomalous dispersion regime is preferred as it allows the generation of optical picosecond pulses with minimum full width at half maximum (FWHM) and maximizes the absolute value of chirp and peak power. This guarantees the generation of narrow and diffraction-limited optical pulses after the chromatic dispersion compensating stage prior photodetection in order to lower the phase noise of the microwave signal generated at 10 GHz but also for high-order microwave harmonics synthesis.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140037400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
98 fs High Energy Stable Hybrid Mode-Locked Nonlinear Polarization Rotation With CuO-Doped ZnO Saturable Absorber 98 fs 高能稳定混合模式锁定非线性极化旋转与氧化铜掺杂氧化锌可饱和吸收体
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-03 DOI: 10.1109/JQE.2024.3396425
H. Ahmad;M. A. M. Lutfi;M. Z. Samion;M. K. A. Zaini;N. Yusoff
{"title":"98 fs High Energy Stable Hybrid Mode-Locked Nonlinear Polarization Rotation With CuO-Doped ZnO Saturable Absorber","authors":"H. Ahmad;M. A. M. Lutfi;M. Z. Samion;M. K. A. Zaini;N. Yusoff","doi":"10.1109/JQE.2024.3396425","DOIUrl":"10.1109/JQE.2024.3396425","url":null,"abstract":"The investigation of a fiber laser utilizing ytterbium-doped hybrid passively mode-locking, featuring a novel copper oxide-doped zinc oxide saturable absorber (CuO-ZnO SA), has been realized. The hybrid mode-locked (hybrid-ML) fiber laser integrates the nonlinear polarization rotation (NPR) technology with the CuO-ZnO-SA, producing remarkable characteristics with a central wavelength of 1045 nm, a 3-dB bandwidth spanning 18.26 nm, an ultra-short pulse width of 98 fs, a repetition frequency of 1.96 MHz, and an impressive signal-to-noise ratio of 51 dB. This research demonstrates a substantial enhancement in laser performance compared to NPR mode-locking alone. Notably, the pulse width experiences a significant compression, reduced by 39 fs, while the signal-to-noise ratio sees a noteworthy improvement of 11 dB. Furthermore, when contrasted with passively mode-locked pulse lasers relying solely on NPR technology, the hybrid passively mode-locked fiber laser attains a substantial reduction in output pulse width, surpassing 98 fs. These findings show the significant potential of the hybrid-ML system in the realm of ultrafast lasers, offering a promising avenue for future applications in cutting-edge research and technology.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-11"},"PeriodicalIF":2.5,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence 建模 3 微米级掺铒氟化物光纤激光器的立方能量传输速率依赖性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-01 DOI: 10.1109/JQE.2024.3372580
William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier
{"title":"Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence","authors":"William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier","doi":"10.1109/JQE.2024.3372580","DOIUrl":"10.1109/JQE.2024.3372580","url":null,"abstract":"We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously introduced weakly interacting (WI) and strongly interacting (SI) models are not adequate for precisely modeling such high-power erbium-doped fluoride fiber lasers. We compare results obtained with the WI and SI models to the proposed model by simulating 4 different highly doped (7 mol.%) fiber lasers previously reported in the literature. Laser efficiencies and powers are reproduced with great accuracy. In addition, four other fiber laser systems based on erbium concentrations varying from 1–6 mol.% are also simulated with good accuracy using the proposed model with the exact same set of spectroscopic parameters, which confirms its validity for various erbium doping concentrations. Redshifting of laser wavelength is also taken into account by considering the full cross section spectra and computing signal powers over several wavelength channels.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140018546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band 带有金纳米粒子的锥形光纤等离子体传感器在 1500 纳米波段的高灵敏度特性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-22 DOI: 10.1109/JQE.2024.3366468
Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka
{"title":"High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band","authors":"Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka","doi":"10.1109/JQE.2024.3366468","DOIUrl":"10.1109/JQE.2024.3366468","url":null,"abstract":"A tapered fiber plasmon sensor with a tip angle of about 30 degrees was fabricated to realize optical absorption and application to an optical sensor using localized plasmon in the 1500 nm wavelength band. The sharp tip angle of a single-mode fiber (SMF) was well controlled by using a highly GeO2-doped single-mode fiber (SMF) and optimizing the etching conditions with buffered fluoric acid. Gold nanoparticles (Au-NPs) with a diameter of 40 nm were deposited by treating the surface of a tipped SMF with silane coupling. The relationship between Au NPs deposition time and deposition ratio was studied to control Au NPs distribution and pursue higher sensitivities. The wavelength sensitivity of 662 nm/RIU was expected at Au NPs deposition ratio of 34.9 % in the analysis, and actually a high sensitivity of 677 nm/RIU at 35.3 % was experimentally demonstrated.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bandwidth Optimization and Fabrication of High-Power MUTC-PD 高功率 MUTC-PD 的带宽优化与制造
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-20 DOI: 10.1109/JQE.2024.3367951
Xuejie Wang;Yongqing Huang;Shuhu Tan;Jiawei Du;Mingxi Yang;Kai Liu;Xiaofeng Duan;Xiaomin Ren
{"title":"Bandwidth Optimization and Fabrication of High-Power MUTC-PD","authors":"Xuejie Wang;Yongqing Huang;Shuhu Tan;Jiawei Du;Mingxi Yang;Kai Liu;Xiaofeng Duan;Xiaomin Ren","doi":"10.1109/JQE.2024.3367951","DOIUrl":"10.1109/JQE.2024.3367951","url":null,"abstract":"A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of \u0000<inline-formula> <tex-math>$20~mu text{m}$ </tex-math></inline-formula>\u0000. In addition, the influence of modulation depth on high-speed and high-power performance is studied.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Consistent Approach for Calculation of VCSEL Spectra Under Deep Microwave Current Modulation 计算深微波电流调制下 VCSEL 光谱的自洽方法
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-20 DOI: 10.1109/JQE.2024.3367908
Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky
{"title":"Self-Consistent Approach for Calculation of VCSEL Spectra Under Deep Microwave Current Modulation","authors":"Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky","doi":"10.1109/JQE.2024.3367908","DOIUrl":"10.1109/JQE.2024.3367908","url":null,"abstract":"We develop a self-consistent approach to calculate the spectra of the vertical-cavity surface-emitting lasers under a deep microwave modulation of the injection current. The treatment consists of solving a coupled system of equations for the concentration of electrons in the active medium and those for the amplitudes of spectral components derived from Maxwell’s equations. Their numerical solution demonstrates the specific asymmetry of experimental laser spectra under microwave modulation of the injection current. The presented method also accounts for the simultaneous modulation at multiple frequencies. We demonstrate that the laser spectrum can be controlled to some extent, namely, its carrier can be suppressed and the ratio of the first sidebands powers can be simultaneously changed by additional modulation of the injection current at doubled frequency. In addition, we show that the phase difference of these components is stable under variations of modulation parameters in a relatively wide range.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Freezing the Suspension of Laser Microcrystals—A New Way for Increasing the Luminescence Efficiency Response 冷冻激光微晶体悬浮液--提高发光效率响应的新方法
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-14 DOI: 10.1109/JQE.2024.3366470
Mikhail A. Shevchenko;Sofia F. Umanskaya;Konstantin I. Zemskov;Nikolay V. Tcherniega;Anna D. Kudryavtseva
{"title":"Freezing the Suspension of Laser Microcrystals—A New Way for Increasing the Luminescence Efficiency Response","authors":"Mikhail A. Shevchenko;Sofia F. Umanskaya;Konstantin I. Zemskov;Nikolay V. Tcherniega;Anna D. Kudryavtseva","doi":"10.1109/JQE.2024.3366470","DOIUrl":"10.1109/JQE.2024.3366470","url":null,"abstract":"In this work, for the first time, the property of particles to form close-packed layer in front of the freezing interface was used to increase the luminescent efficiency response for ruby and titanium-sapphire microcrystals water suspensions. An increase in the efficiency of luminescence response due to an increase in the concentration of particles at the freezing front, can be used for phase transition sensing. In addition, particles packing by freezing method can be used for tuning random laser generation or increasing the efficiency of different nonlinear optical effects in suspensions of particles.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-5"},"PeriodicalIF":2.5,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors 高温中波红外 InAsSb 势垒光电探测器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-13 DOI: 10.1109/JQE.2024.3365649
Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma
{"title":"High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors","authors":"Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma","doi":"10.1109/JQE.2024.3365649","DOIUrl":"10.1109/JQE.2024.3365649","url":null,"abstract":"We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.18~mu text{m}$ </tex-math></inline-formula>\u0000, and the shot noise limited detectivity \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$1.57times 10 ^{12}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak wavelength of \u0000<inline-formula> <tex-math>$3.79~mu text{m}$ </tex-math></inline-formula>\u0000. At 300 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.70~mu text{m}$ </tex-math></inline-formula>\u0000, and the \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$4.87times 10 ^{9}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak response wavelength of \u0000<inline-formula> <tex-math>$4.15~mu text{m}$ </tex-math></inline-formula>\u0000. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-4"},"PeriodicalIF":2.5,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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