IEEE Journal of Quantum Electronics最新文献_第10页

High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging 高功率二极管激光表面老化过程的高分辨率热分析

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-10-19 DOI: 10.1109/JQE.2023.3325256

Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe

{"title":"High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging","authors":"Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe","doi":"10.1109/JQE.2023.3325256","DOIUrl":"10.1109/JQE.2023.3325256","url":null,"abstract":"We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"1-11"},"PeriodicalIF":2.5,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135058867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth 基于algainp的无再生可见红色光子晶体表面发射激光器

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-10-17 DOI: 10.1109/JQE.2023.3325238

Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin

引用次数: 0

Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb pBn Photodetectors 扩展中波红外高工作温度InSb - pBn光电探测器的理论模拟

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-10-17 DOI: 10.1109/JQE.2023.3325233

Yinlin Zhang;Chuang Li;Daqian Guo;Keming Cheng;Kai Shen;Jiang Wu

{"title":"Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb pBn Photodetectors","authors":"Yinlin Zhang;Chuang Li;Daqian Guo;Keming Cheng;Kai Shen;Jiang Wu","doi":"10.1109/JQE.2023.3325233","DOIUrl":"https://doi.org/10.1109/JQE.2023.3325233","url":null,"abstract":"The application of the barrier architecture exhibits the potential in reducing the noise current and improving the performance of photodetectors. However, the development of mid-infrared InSb barrier detector is lagging far behind its III-V counterparts due to the problem of lattice mismatch. In this paper, we proposed two InSb barrier detectors that have reduced dark current and raised operating temperatures with the help of commercial software APSYS platform. The incorporation of a In0.72 Al0.28Sb barrier architecture to the InSb absorber offers a significant dark current reduction over the conventional InSb photodiode, regardless the presence of strain-induced defects within the barrier layers. At 150 K, the InSb bulk barrier detector has a cutoff wavelength at \u0000<inline-formula> <tex-math>$5.65 mu text{m}$ </tex-math></inline-formula>\u0000. With a barrier design, the dark current, \u0000<inline-formula> <tex-math>$9.96times 10^{-3}text{A}$ </tex-math></inline-formula>\u0000/cm2 at −220 mV, is about 77 times lower than the InSb photodiode and the specific detectivity is about \u0000<inline-formula> <tex-math>$2.07times 10 ^{11}$ </tex-math></inline-formula>\u0000 cm Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W with a–220 mV bias voltage, which brings approximately an order of magnitude of performance improvement.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Design Approach for a Homogeneous Hole-Assisted Multi-Core Fiber Through Hole-Allocation Around the Central Core for Minimizing Crosstalk 一种均匀孔辅助多芯光纤的设计方法，通过中心芯周围的孔分配来减少串扰

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-10-09 DOI: 10.1109/JQE.2023.3322678

Sonali Basak;Santu Sarkar;Abhijit K. Mukhopadhyay;Nikhil Ranjan Das;Madhusudan Mishra

{"title":"A Design Approach for a Homogeneous Hole-Assisted Multi-Core Fiber Through Hole-Allocation Around the Central Core for Minimizing Crosstalk","authors":"Sonali Basak;Santu Sarkar;Abhijit K. Mukhopadhyay;Nikhil Ranjan Das;Madhusudan Mishra","doi":"10.1109/JQE.2023.3322678","DOIUrl":"https://doi.org/10.1109/JQE.2023.3322678","url":null,"abstract":"In this paper, a new design of seven-core hole-assisted multi-core fiber with surrounding each core is presented. Here, the holes are assumed to be filled with materials having very low refractive index contrast with cladding. Coupling of light from the central core to the outer cores of seven-core structure is investigated by rotating the holes in the range +30° to −30° around the central core. The optimum range of angles for which coupling is very low is estimated for different values of core-pitch. An average value of crosstalk and power penalty are then calculated from the minimum coupling region for core pitch \u0000<inline-formula> <tex-math>$40~mu text{m}$ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$45~mu text{m}$ </tex-math></inline-formula>\u0000 where crosstalk goes below the threshold limit (which is taken as −30dB). An analytical model has also been developed based on proposed design and the results are seen to be in good agreement with the results from simulation. The proposed optimum design is extremely helpful for enhancing the capacity and efficiency of Space division multiplexing based applications with low crosstalk and power penalty.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-27 DOI: 10.1109/JQE.2023.3313751

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IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-27 DOI: 10.1109/JQE.2023.3313753

引用次数: 0

Blank Page 空白页

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-27 DOI: 10.1109/JQE.2023.3313749

引用次数: 0

A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application PAM-4 100 Gbps单驱动应变SiGe光集总马赫-曾德调制器的o波段应用

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318587

Youngjoo Bae;Seong Ui An;Taewon Jin;Younghyun Kim

{"title":"A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application","authors":"Youngjoo Bae;Seong Ui An;Taewon Jin;Younghyun Kim","doi":"10.1109/JQE.2023.3318587","DOIUrl":"https://doi.org/10.1109/JQE.2023.3318587","url":null,"abstract":"We propose the carrier-depletion type strained SiGe optical lumped Mach-Zehnder modulators (MZMs) with L-shape PN junction (LSPN) with a highly CMOS-compatible fabrication method. The device performance is numerically investigated and optimized by technology computer-aided design (TCAD) simulation. The optimized SiGe LSPN MZ modulator exhibits a high modulation efficiency of 0.52 Vcm for \u0000<inline-formula> <tex-math>$V_{pi }L$ </tex-math></inline-formula>\u0000 with reverse bias voltages of 0V to −2V at 1310 nm wavelength, which is 3.5 times smaller than the conventional PN junction device thanks to strained SiGe. Furthermore, we carried out the large-signal simulation with 1-mW input power. As a result, we found that the SiGe LSPN MZ modulator can achieve 0.54 mW (−2.7 dBm) and 0.17 mW (−7.7 dBm) eye-openings for 50-Gbps NRZ-OOK and 100-Gbps PAM-4, respectively, taking advantage of single-drive configuration and optimizing input characteristics impedance. We expect this SiGe lumped MZ modulator can be one of the promising solutions for replacing a very long Si MZ modulator with traveling-wave electrodes.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-Power III–V/Si Integrated Wavelength Tunable Laser for L-Band Applications l波段应用的高功率III-V /Si集成波长可调谐激光器

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318589

Changpeng Li;Shaoshuai Sui;Feng Gao;Yiming Wang;Xiao Xu;Jia Zhao

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Vulnerability in Free Space QKD Due to Detection Coupling Mismatch 空闲空间QKD检测耦合失配漏洞研究

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318585

Tanya Sharma;Ayan Biswas;Pooja Chandravanshi;Shashi Prabhakar;Ravindra P. Singh

引用次数: 0