IEEE Journal of Quantum Electronics最新文献_第10页

High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band 带有金纳米粒子的锥形光纤等离子体传感器在 1500 纳米波段的高灵敏度特性

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-22 DOI: 10.1109/JQE.2024.3366468

Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka

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Bandwidth Optimization and Fabrication of High-Power MUTC-PD 高功率 MUTC-PD 的带宽优化与制造

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-20 DOI: 10.1109/JQE.2024.3367951

Xuejie Wang;Yongqing Huang;Shuhu Tan;Jiawei Du;Mingxi Yang;Kai Liu;Xiaofeng Duan;Xiaomin Ren

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Self-Consistent Approach for Calculation of VCSEL Spectra Under Deep Microwave Current Modulation 计算深微波电流调制下 VCSEL 光谱的自洽方法

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-20 DOI: 10.1109/JQE.2024.3367908

Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky

{"title":"Self-Consistent Approach for Calculation of VCSEL Spectra Under Deep Microwave Current Modulation","authors":"Alexander P. Bogatov;Alexander E. Drakin;Eugene A. Tsygankov;Maria I. Vaskovskaya;Dmitry S. Chuchelov;Kirill M. Sabakar;Vitaly V. Vassiliev;Sergey A. Zibrov;Vladimir L. Velichansky","doi":"10.1109/JQE.2024.3367908","DOIUrl":"10.1109/JQE.2024.3367908","url":null,"abstract":"We develop a self-consistent approach to calculate the spectra of the vertical-cavity surface-emitting lasers under a deep microwave modulation of the injection current. The treatment consists of solving a coupled system of equations for the concentration of electrons in the active medium and those for the amplitudes of spectral components derived from Maxwell’s equations. Their numerical solution demonstrates the specific asymmetry of experimental laser spectra under microwave modulation of the injection current. The presented method also accounts for the simultaneous modulation at multiple frequencies. We demonstrate that the laser spectrum can be controlled to some extent, namely, its carrier can be suppressed and the ratio of the first sidebands powers can be simultaneously changed by additional modulation of the injection current at doubled frequency. In addition, we show that the phase difference of these components is stable under variations of modulation parameters in a relatively wide range.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Freezing the Suspension of Laser Microcrystals—A New Way for Increasing the Luminescence Efficiency Response 冷冻激光微晶体悬浮液--提高发光效率响应的新方法

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-14 DOI: 10.1109/JQE.2024.3366470

Mikhail A. Shevchenko;Sofia F. Umanskaya;Konstantin I. Zemskov;Nikolay V. Tcherniega;Anna D. Kudryavtseva

引用次数: 0

High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors 高温中波红外 InAsSb 势垒光电探测器

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-13 DOI: 10.1109/JQE.2024.3365649

Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma

{"title":"High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors","authors":"Ting Xue;Jianliang Huang;Yanhua Zhang;Wenquan Ma","doi":"10.1109/JQE.2024.3365649","DOIUrl":"10.1109/JQE.2024.3365649","url":null,"abstract":"We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.18~mu text{m}$ </tex-math></inline-formula>\u0000, and the shot noise limited detectivity \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$1.57times 10 ^{12}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak wavelength of \u0000<inline-formula> <tex-math>$3.79~mu text{m}$ </tex-math></inline-formula>\u0000. At 300 K, the 50% cutoff wavelength is \u0000<inline-formula> <tex-math>$4.70~mu text{m}$ </tex-math></inline-formula>\u0000, and the \u0000<inline-formula> <tex-math>$D^{star} $ </tex-math></inline-formula>\u0000 is \u0000<inline-formula> <tex-math>$4.87times 10 ^{9}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W for the peak response wavelength of \u0000<inline-formula> <tex-math>$4.15~mu text{m}$ </tex-math></inline-formula>\u0000. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-4"},"PeriodicalIF":2.5,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrections to “Optical Pumping and Electrical Injection of a 3.6 μm Interband Cascade Laser” 对 "3.6 μm 带间级联激光器的光泵送和电注入 "的更正

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-08 DOI: 10.1109/JQE.2024.3364628

Linda J. Olafsen;Kyler A. Stephens;Daniella R. DeVries

引用次数: 0

Vertical Coupling Effect on Gain Bandwidth of Chirped InAs/InP Quantum Dot Structures 垂直耦合对啁啾 InAs/InP 量子点结构增益带宽的影响

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3357031

Gaowen Chen;Fujuan Huang;Xiupu Zhang

{"title":"Vertical Coupling Effect on Gain Bandwidth of Chirped InAs/InP Quantum Dot Structures","authors":"Gaowen Chen;Fujuan Huang;Xiupu Zhang","doi":"10.1109/JQE.2024.3357031","DOIUrl":"https://doi.org/10.1109/JQE.2024.3357031","url":null,"abstract":"Quantum dot (QD) devices are usually desired to have a broadband gain spectrum. An alternative solution to achieve a broadband gain in QD devices is to use multiple layers with different QD heights, which are stacked vertically, i.e. a chirped QD structure in the active region. In the chirped stacked QD structure, the vertical strain and electron coupling effect have a significant impact on the optical transition property and thus optical gain bandwidth. However, previous studies on the vertical coupling effect have mainly focused on uniformly stacked QD structures, and the chirped QD structures have not been investigated carefully. This work presents a detailed analysis of the vertical coupling effect in chirped QD structures (i.e. ascending and descending chirped structure) and its impact on the optical gain bandwidth of the active region. It is found that the descending chirped structure leads to a wider gain bandwidth, in particular at high current injection. A Fabry-Perot mode-locked laser with the descending chirped structure presents a better performance in pulse width and frequency comb lines compared to the ascending chirped structure.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139744753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hysteresis Behavior of External Cavity Quantum Cascade Lasers in the Strong Feedback Regime 强反馈机制下外腔量子级联激光器的滞后行为

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3362272

Jonas Schundelmeier;Quankui Yang;Stefan Hugger

引用次数: 0

Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering 利用内腔工程缩小垂直腔表面发射激光器线宽

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-02-05 DOI: 10.1109/JQE.2024.3362276

Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu

{"title":"Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering","authors":"Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu","doi":"10.1109/JQE.2024.3362276","DOIUrl":"10.1109/JQE.2024.3362276","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (\u0000<inline-formula> <tex-math>$sim $ </tex-math></inline-formula>\u00004000 cm\u0000<inline-formula> <tex-math>$^{-1}$ </tex-math></inline-formula>\u0000) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-01-29 DOI: 10.1109/JQE.2024.3355921

引用次数: 0