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IEEE Journal of Quantum Electronics最新文献

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Modeling of 1.7-μm and 2.4-μm Dual-Wavelength Pumped 4.3-μm Dysprosium-Doped Chalcogenide Fiber Lasers 1.7 μm 和 2.4 μm 双波长泵浦 4.3 μm 掺镝钙钛矿光纤激光器建模
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-08 DOI: 10.1109/JQE.2024.3350688
Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo
{"title":"Modeling of 1.7-μm and 2.4-μm Dual-Wavelength Pumped 4.3-μm Dysprosium-Doped Chalcogenide Fiber Lasers","authors":"Yang Xiao;Jian Cui;Xusheng Xiao;Yantao Xu;Haitao Guo","doi":"10.1109/JQE.2024.3350688","DOIUrl":"10.1109/JQE.2024.3350688","url":null,"abstract":"A novel \u0000<inline-formula> <tex-math>$1.7 mu text{m}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 dual-wavelength pumping scheme for a \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium (Dy3+)-doped chalcogenide fiber laser was theoretically demonstrated. It was attributed to the \u0000<inline-formula> <tex-math>$2.4 mu text{m}$ </tex-math></inline-formula>\u0000 excited stated absorption (ESA, \u0000<inline-formula> <tex-math>$^{6}text{H}_{mathrm {13/2}} to ^{6}text{H}_{mathrm {9/2}},^{6}text{F}_{mathrm {11/2}}$ </tex-math></inline-formula>\u0000 transition). Theoretically, when the two pumps were 5 W and 2 W, respectively, a laser power of 1.5 W with an remarkable efficiency of 30.2% was obtained from the home-made Dy3+:Ga0.8As34.2Sb5S60 glass fiber with a loss coefficient of 3 dB/m and a Dy3+ concentration of \u0000<inline-formula> <tex-math>$3.67times 10^{25}$ </tex-math></inline-formula>\u0000 ions/m3. Results indicated that the dual-wavelength pumping scheme based on the gain fiber provides a potential way to \u0000<inline-formula> <tex-math>$4.3 mu text{m}$ </tex-math></inline-formula>\u0000 dysprosium-doped chalcogenide fiber lasers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-6"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-Optical Feedback for (Nearly) All-Optical Detection 用于（几乎）全光学探测的电光反馈
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-08 DOI: 10.1109/JQE.2023.3348113
Tamir Weinstock;Ofer Amrani
{"title":"Electro-Optical Feedback for (Nearly) All-Optical Detection","authors":"Tamir Weinstock;Ofer Amrani","doi":"10.1109/JQE.2023.3348113","DOIUrl":"10.1109/JQE.2023.3348113","url":null,"abstract":"Electro-optical feedback circuit is presented and analyzed. The method realizes a closed-loop positive feedback by feeding the electrodes of a Mach-Zehnder interferometer with the voltage produced by its own detection circuit. In its basic form, it is shown to act as a multi-level opto-electric quantizer. The quantization behavior disclosed herein is realized via the opto-electric conversion process itself. The circuit is modeled by an equivalent electronic representation with which the static and dynamic behavior of the circuit is characterized. A component-level electro-optical simulation is included, supporting the theoretical results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by Particle Swarm Optimization 利用粒子群优化技术优化通用 InP 平台上相干接收器的平衡探测器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-01-03 DOI: 10.1109/JQE.2024.3349516
Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol
{"title":"Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by Particle Swarm Optimization","authors":"Dhiman Nag;Weiming Yao;Jos J. G. M. van der Tol","doi":"10.1109/JQE.2024.3349516","DOIUrl":"10.1109/JQE.2024.3349516","url":null,"abstract":"The balanced photodetector (BPD) is an important component for high-speed coherent receiver. An optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on a generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. The design methodology to integrate laser with optimized BPD is presented to successfully implement a coherent receiver.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-12"},"PeriodicalIF":2.5,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10379816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures 锰植入氮化镓 pi-n 结构中的光增强室温磁性和双光子效应
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-12-29 DOI: 10.1109/JQE.2023.3348112
John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse
{"title":"Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures","authors":"John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse","doi":"10.1109/JQE.2023.3348112","DOIUrl":"https://doi.org/10.1109/JQE.2023.3348112","url":null,"abstract":"The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by \u0000<inline-formula> <tex-math>$0.2~mu _{B}$ </tex-math></inline-formula>\u0000/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"1-12"},"PeriodicalIF":2.5,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139399819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2023 Index IEEE Journal of Quantum Electronics Vol.59 2023 索引 IEEE《量子电子学报》第 59 卷
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-12-22 DOI: 10.1109/JQE.2023.3345875
{"title":"2023 Index IEEE Journal of Quantum Electronics Vol.59","authors":"","doi":"10.1109/JQE.2023.3345875","DOIUrl":"10.1109/JQE.2023.3345875","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-21"},"PeriodicalIF":2.5,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10372134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139014895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Steady-State Semi-Analytical Modeling of p-Doped Quantum Dot Lasers Thermal Characteristics and Extrapolation to Membrane Lasers 对掺杂量子点激光器热特性的稳态半分析建模以及对薄膜激光器的推断
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-12-13 DOI: 10.1109/JQE.2023.3342180
Mattéo Chobé;Karim Hassan
{"title":"Steady-State Semi-Analytical Modeling of p-Doped Quantum Dot Lasers Thermal Characteristics and Extrapolation to Membrane Lasers","authors":"Mattéo Chobé;Karim Hassan","doi":"10.1109/JQE.2023.3342180","DOIUrl":"https://doi.org/10.1109/JQE.2023.3342180","url":null,"abstract":"We present a rate equation model for the simulation of quantum dot lasers focusing on modeling the thermal behavior of p-doped devices, which are known to exhibit a reduced temperature sensitivity. The simulation results are compared with experimental data from the literature to demonstrate the model accuracy and underline the impact of npp Auger recombination and intervalence band absorption on the high room-temperature characteristic temperature of p-doped lasers. Applying this model to membrane lasers featuring high optical confinement factors in small active regions due to the use of thin III-V stacks as compared to conventional lasers, we demonstrate the potential of such lasers for short-distance optical interconnects as high temperature (110 °C) operation is predicted for an optimized design, with submilliamp threshold up to 60 °C.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 1","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138822194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333157
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2023.3333157","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333157","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334510","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333159
{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2023.3333159","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333159","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"C4-C4"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334513","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TechRxiv: Share Your Preprint Research with the World! techxiv:与世界分享你的预印本研究!
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333719
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/JQE.2023.3333719","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333719","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"1-1"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333153
{"title":"IEEE Journal of Quantum Electronics publication information","authors":"","doi":"10.1109/JQE.2023.3333153","DOIUrl":"https://doi.org/10.1109/JQE.2023.3333153","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"59 6","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10334512","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138468232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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