发布求助
文献互助 智能选刊 最新文献

IEEE Journal of Quantum Electronics最新文献

筛选
英文 中文
A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application PAM-4 100 Gbps单驱动应变SiGe光集总马赫-曾德调制器的o波段应用
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318587
Youngjoo Bae;Seong Ui An;Taewon Jin;Younghyun Kim
{"title":"A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application","authors":"Youngjoo Bae;Seong Ui An;Taewon Jin;Younghyun Kim","doi":"10.1109/JQE.2023.3318587","DOIUrl":"https://doi.org/10.1109/JQE.2023.3318587","url":null,"abstract":"We propose the carrier-depletion type strained SiGe optical lumped Mach-Zehnder modulators (MZMs) with L-shape PN junction (LSPN) with a highly CMOS-compatible fabrication method. The device performance is numerically investigated and optimized by technology computer-aided design (TCAD) simulation. The optimized SiGe LSPN MZ modulator exhibits a high modulation efficiency of 0.52 Vcm for \u0000<inline-formula> <tex-math>$V_{pi }L$ </tex-math></inline-formula>\u0000 with reverse bias voltages of 0V to −2V at 1310 nm wavelength, which is 3.5 times smaller than the conventional PN junction device thanks to strained SiGe. Furthermore, we carried out the large-signal simulation with 1-mW input power. As a result, we found that the SiGe LSPN MZ modulator can achieve 0.54 mW (−2.7 dBm) and 0.17 mW (−7.7 dBm) eye-openings for 50-Gbps NRZ-OOK and 100-Gbps PAM-4, respectively, taking advantage of single-drive configuration and optimizing input characteristics impedance. We expect this SiGe lumped MZ modulator can be one of the promising solutions for replacing a very long Si MZ modulator with traveling-wave electrodes.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power III–V/Si Integrated Wavelength Tunable Laser for L-Band Applications l波段应用的高功率III-V /Si集成波长可调谐激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318589
Changpeng Li;Shaoshuai Sui;Feng Gao;Yiming Wang;Xiao Xu;Jia Zhao
{"title":"High-Power III–V/Si Integrated Wavelength Tunable Laser for L-Band Applications","authors":"Changpeng Li;Shaoshuai Sui;Feng Gao;Yiming Wang;Xiao Xu;Jia Zhao","doi":"10.1109/JQE.2023.3318589","DOIUrl":"https://doi.org/10.1109/JQE.2023.3318589","url":null,"abstract":"We demonstrate a III-V/Si widely wavelength tunable laser covering the entire L-band for the optical communication systems. By carefully designing the silicon ring filter, low threshold current and high output power are expected. Using the standard silicon photonic process, the silicon filter chip is fabricated and compactly packaged with a reflective semiconductor optical amplifier. The low threshold current of 20 mA is achieved at 15 °C, and over 76 mW output power is obtained at 320 mA. The wavelength tuning range from 1565 nm to 1635 nm is realized with the side-mode suppression ratio larger than 50 dB. Furthermore, the intrinsic linewidth narrower than 25 kHz and relative intensity noise below −152 dB/Hz is achieved, which can support the coherent communications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/3/10257665/10262027.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vulnerability in Free Space QKD Due to Detection Coupling Mismatch 空闲空间QKD检测耦合失配漏洞研究
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318585
Tanya Sharma;Ayan Biswas;Pooja Chandravanshi;Shashi Prabhakar;Ravindra P. Singh
{"title":"Vulnerability in Free Space QKD Due to Detection Coupling Mismatch","authors":"Tanya Sharma;Ayan Biswas;Pooja Chandravanshi;Shashi Prabhakar;Ravindra P. Singh","doi":"10.1109/JQE.2023.3318585","DOIUrl":"https://doi.org/10.1109/JQE.2023.3318585","url":null,"abstract":"Practical implementations of QKD protocols involve devices which are not perfect, and an eavesdropper may exploit this to gain information leading to attacks. Here we have considered the effects of coupling mismatch between the detectors. We find possible information leakage to Eve due to coupling mismatch at the receiver’s detectors in terms of mutual information between the eavesdropper and receiver. The experiment has been performed for the Gaussian and Laguerre-Gaussian modes of the signal. This aspect becomes essential while implementing free space QKD using a satellite. The results suggest that accounting for detection coupling mismatch is crucial to avoid side-channel attacks.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
60 nm Widely Tunable Three Section Slot Laser 60纳米宽可调谐三段槽激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI: 10.1109/JQE.2023.3318588
Jack Mulcahy;John McCarthy;Frank H. Peters;Xing Dai
{"title":"60 nm Widely Tunable Three Section Slot Laser","authors":"Jack Mulcahy;John McCarthy;Frank H. Peters;Xing Dai","doi":"10.1109/JQE.2023.3318588","DOIUrl":"https://doi.org/10.1109/JQE.2023.3318588","url":null,"abstract":"This paper presents a tunable single mode Dual-mirror Slotted Fabry Pérot (DSFP) laser with near 60 nm tuning of the wavelengths between 1530 nm to 1590 nm. The laser modes measured demonstrate high SMSR lasing exceeding 30 dB with SMSRs as high as 45 dB. The electrical tuning of the laser facilitates more than 20 nm of continuous 50 GHz channel spacing between 1545 nm and 1565 nm. Additional thermal tuning facilitates more than 40 nm of continuous 50 GHz channel spacing between 1540 nm and 1580 nm.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10261992","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109229878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi- and Dual-Wavelength Laser at S-Band by Incorporating All-Fiber Lyot Filter in Tm3+-Doped ZBLAN Fiber: A Millimeter-Wave Generation Toward 5-G Communication 在Tm3+掺杂ZBLAN光纤中加入全光纤Lyot滤波器的s波段多波长和双波长激光:面向5g通信的毫米波产生
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-22 DOI: 10.1109/JQE.2023.3317503
H. Ahmad;B. Nizamani;M. Z. Samion;M. Z. Zulkifli
{"title":"Multi- and Dual-Wavelength Laser at S-Band by Incorporating All-Fiber Lyot Filter in Tm3+-Doped ZBLAN Fiber: A Millimeter-Wave Generation Toward 5-G Communication","authors":"H. Ahmad;B. Nizamani;M. Z. Samion;M. Z. Zulkifli","doi":"10.1109/JQE.2023.3317503","DOIUrl":"https://doi.org/10.1109/JQE.2023.3317503","url":null,"abstract":"In this work, we have demonstrated the generation of multi- and dual-wavelength fiber lasers at the S-band using an all-fiber-based Lyot filter in a thulium-doped fluoride fiber laser. The Lyot filtering mechanism was first realized at S-band using a polarizer, two polarization controllers, and a 20-m polarization-maintaining fiber. About 13 lasing lines were observed at the S-band covering the wavelength region of 1502 to 1505-nm. The highest possible optical signal-to-noise ratio in a multiwavelength fiber laser was 57.2-dB at the operating wavelength of 1504.52-nm. The stability of this multiwavelength fiber laser was also realized for 2 hours. A highly stable multiwavelength with very slight power fluctuation at lasing peaks of only about ≤ 0.4 dB: there are no wavelength changes during the multiwavelength laser operation for 2 hours. The free spectral range (FSR) of the all-fiber Lyot filter was 0.24-nm, and the frequency bandwidth was achieved as 31.78-GHz. When a tunable bandpass filter (TBPF) was included in the laser cavity, a dual-wavelength fiber laser (DWFL) was also realized at 1504.98 and 1505.22-nm.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Watt-Level Pr3+:LiYF4 Novel Green Lasers at 519 nm, 538 nm, and 550 nm 瓦级Pr3+:LiYF4新型519 nm, 538 nm和550 nm的绿色激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-14 DOI: 10.1109/JQE.2023.3315306
Yuchen Xue;Zhengdong Dai;Weihang Cao;Zhongyu Wang;Bo Xiao;Huiying Xu;Zhiping Cai
{"title":"Watt-Level Pr3+:LiYF4 Novel Green Lasers at 519 nm, 538 nm, and 550 nm","authors":"Yuchen Xue;Zhengdong Dai;Weihang Cao;Zhongyu Wang;Bo Xiao;Huiying Xu;Zhiping Cai","doi":"10.1109/JQE.2023.3315306","DOIUrl":"https://doi.org/10.1109/JQE.2023.3315306","url":null,"abstract":"We report the first demonstration on three new wavelengths of 519 nm, 538 nm, 550 nm in the \u0000<inline-formula> <tex-math>$sigma $ </tex-math></inline-formula>\u0000-polarized direction based on continuous-wave (CW) Pr3+:LiYF\u0000<inline-formula> <tex-math>$_{mathbf {4}}$ </tex-math></inline-formula>\u0000 laser. The transitions mechanism combined dual upper energy levels of \u0000<inline-formula> <tex-math>$^{3}text{P}_{mathbf {1}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$^{3}text{P}_{mathbf {0}}$ </tex-math></inline-formula>\u0000 with Stark sub-levels of \u0000<inline-formula> <tex-math>$^{3}text{H}_{mathbf {5}}$ </tex-math></inline-formula>\u0000 was proposed. The CW lasers achieve output power greater than watt levels in the \u0000<inline-formula> <tex-math>$sigma $ </tex-math></inline-formula>\u0000-polarized direction at room temperature, with 1.21 W at 519 nm, 1.45 W at 538 nm, and 1.06 W at 550 nm.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A New Approach to Analyze Nonlinear Propagation in Arbitrary RI Fiber and Study of Dynamic Dispersion Shifting and Flattening 一种分析任意RI光纤非线性传输的新方法及动态色散移位和平坦化研究
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-11 DOI: 10.1109/JQE.2023.3314073
Protik Roy;Mitali Sahu;Partha Roy Chaudhuri
{"title":"A New Approach to Analyze Nonlinear Propagation in Arbitrary RI Fiber and Study of Dynamic Dispersion Shifting and Flattening","authors":"Protik Roy;Mitali Sahu;Partha Roy Chaudhuri","doi":"10.1109/JQE.2023.3314073","DOIUrl":"https://doi.org/10.1109/JQE.2023.3314073","url":null,"abstract":"In this article, we present a new approach to study the nonlinear wave propagation along fibers having any arbitrary refractive index profile. Our algorithm devised in a finite difference platform, yields the dispersion properties precisely as applied to the representative cases. We show, by varying applied peak power, the zero dispersion wavelength (ZDW) can be shifted towards 1550 nm wavelength window. Furthermore, we establish the design of realising a flattened total dispersion profile around the Zero Dispersion Wavelength (ZDW). We have achieved consistent total dispersion values within the range of ±1.50 ps/km-nm by utilizing various core radii and highest applied powers of 28 mW, 55 mW, and 118 mW. These dispersion values remain constant over bandwidths of 223 nm, 458 nm, and 531 nm, respectively. These are new results in the context of controlling dispersion characteristics dynamically with varying applied power in the nonlinear fiber medium having any symmetric or asymmetric core cross-section.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies 具有高电压效率的低阈值、长波长带间级联激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-11 DOI: 10.1109/JQE.2023.3314098
Jeremy A. Massengale;Yixuan Shen;Rui Q. Yang;Samuel D. Hawkins;Aaron J. Muhowski
{"title":"Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies","authors":"Jeremy A. Massengale;Yixuan Shen;Rui Q. Yang;Samuel D. Hawkins;Aaron J. Muhowski","doi":"10.1109/JQE.2023.3314098","DOIUrl":"https://doi.org/10.1109/JQE.2023.3314098","url":null,"abstract":"We report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-\u0000<inline-formula> <tex-math>$12~mu text{m}$ </tex-math></inline-formula>\u0000 wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (\u0000<inline-formula> <tex-math>$text{V}_{text {th}}$ </tex-math></inline-formula>\u0000) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at \u0000<inline-formula> <tex-math>$10.3~mu text{m}$ </tex-math></inline-formula>\u0000 and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (\u0000<inline-formula> <tex-math>$text{J}_{text {th}}$ </tex-math></inline-formula>\u0000) of 8.8 A/cm2 in cw mode and 7.6 A/cm2 in pulsed mode near \u0000<inline-formula> <tex-math>$10~mu text{m}$ </tex-math></inline-formula>\u0000 were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at \u0000<inline-formula> <tex-math>$11.7~mu text{m}$ </tex-math></inline-formula>\u0000, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond \u0000<inline-formula> <tex-math>$12~mu text{m}$ </tex-math></inline-formula>\u0000 in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49957114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nonlinear Dynamics Tailored by Spin-Polarized Carriers in Semiconductor Vertical-Cavity Surface-Emitting Lasers 半导体垂直腔面发射激光器中自旋极化载流子定制的非线性动力学
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-01 DOI: 10.1109/JQE.2023.3310969
Qing Fang;Huiming Wang;Hanxu Zhou;Can Jiang;Weizheng Di;Gaofeng Xu;Tao Wang
{"title":"Nonlinear Dynamics Tailored by Spin-Polarized Carriers in Semiconductor Vertical-Cavity Surface-Emitting Lasers","authors":"Qing Fang;Huiming Wang;Hanxu Zhou;Can Jiang;Weizheng Di;Gaofeng Xu;Tao Wang","doi":"10.1109/JQE.2023.3310969","DOIUrl":"10.1109/JQE.2023.3310969","url":null,"abstract":"Spin-polarized carriers generated in semiconductor cavities by electrical injection or circularly polarized light, favour the realization of newly developed spin-VCSELs. Such light sources have been considered as a type of information carrier, which can supply the enhanced performance for communications and signal processing. In this work, we provide a numerical investigation of the nonlinear dynamics of semiconductor lasers with injection of controllable spin-polarized electrons, in particular, pay more attention on the influence of noise of two polarization states. Through using the second-order correlation functions, we reveal that superthermal emission properties associated with \u0000<inline-formula> <tex-math>$g^{(2)}(0) &gt; 2$ </tex-math></inline-formula>\u0000 can be generated through modifying the spin of pump current. The noise effect on laser emission can be tuned by modifying the pump ellipticity, which is significant for the laser device design and fabrication. In addition, the corresponding polarization dynamics characterized by the Poincaré sphere is also discussed. Our study may supply a theoretical guidance for people to better understand the underlying dynamics of spin-VCSELs.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43181632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of Ultraviolet μLED Array With Novel Electrical Contact Etch Mask 用新型电接触蚀刻掩模演示紫外μLED阵列
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2023-09-01 DOI: 10.1109/JQE.2023.3310968
Matthew Seitz;Matthew Hartensveld;Bryan Melanson;Jacob Boisvere;Jing Zhang
{"title":"Demonstration of Ultraviolet μLED Array With Novel Electrical Contact Etch Mask","authors":"Matthew Seitz;Matthew Hartensveld;Bryan Melanson;Jacob Boisvere;Jing Zhang","doi":"10.1109/JQE.2023.3310968","DOIUrl":"10.1109/JQE.2023.3310968","url":null,"abstract":"We report on the realization of a uniform array of electrically driven, individually addressable micro light-emitting diodes (\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LEDs) with diameters of \u0000<inline-formula> <tex-math>$2.5~mu text{m}$ </tex-math></inline-formula>\u0000 emitting at 372 nm. This highly ordered array was fabricated via a top-down fabrication approach using a novel Ni/Au/Ni structure which combines both a Ni/Au low-resistance electrical contact and durable Ni etch mask. The use of this novel structure allows individual \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LEDs to be addressed with promising electroluminescence intensity and narrow linewidth at ultraviolet-A (UV-A) band. This improved control over \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LED output power and emission location makes our approach an important step towards the development of high efficiency UV-A \u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LEDs for a range of applications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49506665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信