IEEE Journal of Quantum Electronics最新文献_第9页

IEEE Journal of Quantum Electronics information for authors IEEE量子电子学杂志作者信息

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501783

引用次数: 0

IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501779

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IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501833

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Extremely Dispersive Fiber With Gradient-High-Index Core and Concentric Ring 具有梯度高折射率芯和同心环的极色散光纤

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-26 DOI: 10.1109/JQE.2024.3506825

Qinru Peng;Wenpu Geng;Wenqian Zhao;Yuanpeng Liu;Zhongqi Pan;Yang Yue

{"title":"Extremely Dispersive Fiber With Gradient-High-Index Core and Concentric Ring","authors":"Qinru Peng;Wenpu Geng;Wenqian Zhao;Yuanpeng Liu;Zhongqi Pan;Yang Yue","doi":"10.1109/JQE.2024.3506825","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506825","url":null,"abstract":"In this work, an extremely dispersive optical fiber, incorporating a gradient-index central core and extra concentric ring structure of high-index material, is proposed and tailored specifically for the HE1,1 mode. The impacts of geometrical parameters and doping concentration are explored for the corresponding dispersion characteristics. By systematically adjusting diverse fiber parameters, it becomes evident that alterations in the curve slope discrepancies between the effective index of the central core and the outer ring directly influence both the optical dispersion peak and bandwidth. Consequently, the optical dispersion characteristics of the designed fiber can be customized to meet specific requirements by adjusting both fiber geometry and doping concentration of germanium dioxide. Further refinement of the fiber’s geometric parameters results in achieving a negative chromatic dispersion value of -203,898 ps/(nm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000 km) at 1547.9 nm. Moreover, the peak dispersion magnitude in our gradient-index fiber design significantly surpasses that of the step-index fiber.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide 相位控制波导混合调制激光二极管的本征调制特性

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-25 DOI: 10.1109/JQE.2024.3506392

Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi

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Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes 4H-SiC雪崩光电二极管的快速自由运行电路

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-18 DOI: 10.1109/JQE.2024.3501195

Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo

引用次数: 0

High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers 基于InGaAs/ inasb ii型超晶格InGaAsSb势垒的高温中波长红外探测器

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-08 DOI: 10.1109/JQE.2024.3494696

Shuqing Deng;Zhen Liu;Yong Huang

{"title":"High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers","authors":"Shuqing Deng;Zhen Liu;Yong Huang","doi":"10.1109/JQE.2024.3494696","DOIUrl":"https://doi.org/10.1109/JQE.2024.3494696","url":null,"abstract":"Mid-wavelength infrared detectors based on InGaAs/InAsSb superlattices were successfully grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD). AlSb-free InGaAsSb quaternary alloy was employed as the electron barrier layer to reduce the dark current. By comparing the electrical and optical performances of three PNn devices with different Ga compositions in In\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000GaxAs\u0000<inline-formula> <tex-math>$_{mathrm {1-y}}$ </tex-math></inline-formula>\u0000Sby barriers, the optimal Ga composition was found to be 0.3. At 150 K, the dark current density of this device was \u0000<inline-formula> <tex-math>$1.2 times 10^{-4}$ </tex-math></inline-formula>\u0000 A/cm2 at -0.1 V. The device operates at zero bias with a 50% cutoff wavelength of \u0000<inline-formula> <tex-math>$sim 5.1~mu $ </tex-math></inline-formula>\u0000m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of \u0000<inline-formula> <tex-math>$2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Design and Experimental Demonstration of a High-Performance 2 × 2 Restricted Interference MMI Coupler-Based Optical Power Splitter for C-Band Applications 基于高性能2 × 2受限干涉MMI耦合器的c波段光功率分配器的设计与实验演示

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-08 DOI: 10.1109/JQE.2024.3494695

Thuy Tran Thi Thanh;Duy Nguyen Thi Hang;Hieu Nguyen Trung;Minh Tuan Trinh;Linh Ho Duc Tam;Hung Nguyen Tan;Cao Dung Truong

{"title":"Design and Experimental Demonstration of a High-Performance 2 × 2 Restricted Interference MMI Coupler-Based Optical Power Splitter for C-Band Applications","authors":"Thuy Tran Thi Thanh;Duy Nguyen Thi Hang;Hieu Nguyen Trung;Minh Tuan Trinh;Linh Ho Duc Tam;Hung Nguyen Tan;Cao Dung Truong","doi":"10.1109/JQE.2024.3494695","DOIUrl":"https://doi.org/10.1109/JQE.2024.3494695","url":null,"abstract":"Silicon waveguide-based optical splitters are fundamental components in the development of advanced functional circuits, including optical switches, routers, modulators, and various optical logic circuits. Among the various approaches, multimode interference (MMI) waveguides are widely employed in optical splitters due to their broad bandwidth, high fabrication tolerance, stability, efficient light confinement, and low transmission loss. In this study, we present the design of an optical splitter based on restricted interference mechanisms, where the precise positioning of input pairs and careful adjustment of the MMI region length are key factors. By applying interference theory, we successfully reduce the length of the RI-MMI coupler. The design undergoes extensive optimization through rigorous 3D-FDTD simulations to ensure optimal performance. Subsequently, we fabricated 11 chip designs using 193-nm deep ultraviolet (DUV) photolithography and plasma-enhanced chemical vapor deposition (PECVD) processes. Performance measurements, conducted through subwavelength grating couplers (SWGC), reveal that our optimized design achieves very low insertion loss (IL) (<5> <tex-math>$lt -23$ </tex-math></inline-formula> dB) across the entire C-band. Additionally, the devices exhibit low ripple, a nearly input-independent coupling ratio (CR), and balanced splitting ratios within a 10 nm range centered around 1555 nm to 1565 nm. Notably, the core component of the splitter is housed within an ultra-compact footprint of <inline-formula> <tex-math>$6~mu $ </tex-math></inline-formula>m <inline-formula> <tex-math>$times 65~mu $ </tex-math></inline-formula>m. These exceptional characteristics position the proposed device as a promising candidate for large-scale integrated optical circuits in telecommunications applications.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 4","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144725243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding 基于包层无孔矩形芯光子晶体光纤的偏振分束器设计

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-11-06 DOI: 10.1109/JQE.2024.3492147

Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji

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Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions 声子修饰诱导非极性离子偶极矩排列

IF 2.2 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2024-10-28 DOI: 10.1109/JQE.2024.3487502

Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang

引用次数: 0