发布求助
文献互助 智能选刊 最新文献

IEEE Journal of Quantum Electronics最新文献

筛选
英文 中文
Spectrally Pure W-Band RF Carrier Generation With Packaged Silicon Photonics Circuit 利用封装硅光子电路生成光谱纯净的 W 波段射频载波
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-21 DOI: 10.1109/JQE.2024.3380552
Claudio Porzi;Marco Chiesa;Alessandra Bigongiari;Aina Serrano Rodrigo;Marc Sorel;Davide Rotta;Luca Roselli;Antonio D’Errico;Antonella Bogoni;Antonio Malacarne
{"title":"Spectrally Pure W-Band RF Carrier Generation With Packaged Silicon Photonics Circuit","authors":"Claudio Porzi;Marco Chiesa;Alessandra Bigongiari;Aina Serrano Rodrigo;Marc Sorel;Davide Rotta;Luca Roselli;Antonio D’Errico;Antonella Bogoni;Antonio Malacarne","doi":"10.1109/JQE.2024.3380552","DOIUrl":"10.1109/JQE.2024.3380552","url":null,"abstract":"A packaged silicon photonics radio-frequency (RF) synthesizer operating in the millimeter (mm-) wave band suitable for clock signal distribution in b5G/6G radio access networks is realized and experimentally characterized. The assembly include a photonic integrated circuit (PIC) acting as a frequency multiplier for a local oscillator (LO) reference at microwave frequencies and a printed circuit board (PCB) hosting a custom bias tee designed to provide a wideband matching condition over more than 6 GHz around 20GHz for the input LO signal and supporting high power levels for efficient frequency multiplication operation. Measurements performed on a 100GHz generated RF signal via five-fold multiplication of a LO wave at 20 GHz indicate a low phase noise level of -97dBc/Hz at an offset of 10kHz from the carrier with a limited excess timing jitter of less than 2fs with respect to the LO signal, making the circuit operating nearly as an ideal frequency multiplier.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140200379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron 亚微米级倍增宽度的 InGaAs/InP 单光子雪崩二极管分析
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-09 DOI: 10.1109/JQE.2024.3399176
Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang
{"title":"Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron","authors":"Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang","doi":"10.1109/JQE.2024.3399176","DOIUrl":"10.1109/JQE.2024.3399176","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission 用于光通信传输的 1×4 集成微透镜高速率光电探测器阵列
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-08 DOI: 10.1109/JQE.2024.3374126
Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang
{"title":"1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission","authors":"Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang","doi":"10.1109/JQE.2024.3374126","DOIUrl":"10.1109/JQE.2024.3374126","url":null,"abstract":"Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a \u0000<inline-formula> <tex-math>$1times 4$ </tex-math></inline-formula>\u0000 photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of \u0000<inline-formula> <tex-math>$10~mu text{m}$ </tex-math></inline-formula>\u0000 away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140076302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photovoltaic Modulating Retroreflectors for Low Power Consumption Free Space Optical Communication Systems 用于低功耗自由空间光通信系统的光电调制逆反射器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-07 DOI: 10.1109/JQE.2024.3374101
Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton
{"title":"Photovoltaic Modulating Retroreflectors for Low Power Consumption Free Space Optical Communication Systems","authors":"Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton","doi":"10.1109/JQE.2024.3374101","DOIUrl":"10.1109/JQE.2024.3374101","url":null,"abstract":"An InGaAs-InAsP-GaInP asymmetric stepped quantum well structure is proposed for unbiased detection and subsequent modulation of an incident continuous wave optical signal for application in compact, retroreflective, free-space optical communication platforms. Such operation drastically reduces onboard power consumption in large-area, pixelated arrays by driving only optically activated pixels. A modelling routine involving calculations of band structure, fraction of light absorbed, and responsivity have been used to analyse structures exhibiting an asymmetric quantum confined Stark effect. The proposed structure, compared with devices following similar modeling approaches, is predicted to exhibit an unbiased responsivity of 0.004 A/W enabling single pixel detection prior to triggering modulation. The calculated photocurrent of \u0000<inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>\u0000 A offers adequate signal to noise against dark current when operated in a photovoltaic mode. Furthermore, the strong blueshift in the ground state transition energy calculated for the applied field results in extinction ratios in excess of 4dB for the modulated signal. These findings suggest performance enhancements at a fraction of current onboard power consumption in modulating retroreflectors for compact, free-space optical communication platforms.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140076168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Design and Characterization in Amplitude and Phase of a Compact 8-Channel Loop-Back AWG Based Integrated Comb Processor 基于集成梳状处理器的紧凑型 8 通道回环 AWG 的设计与振幅和相位特性分析
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-06 DOI: 10.1109/JQE.2024.3397644
L. Roel van der Zon;Luis A. Bru;Pascual Muñoz;Daniel Pastor
{"title":"The Design and Characterization in Amplitude and Phase of a Compact 8-Channel Loop-Back AWG Based Integrated Comb Processor","authors":"L. Roel van der Zon;Luis A. Bru;Pascual Muñoz;Daniel Pastor","doi":"10.1109/JQE.2024.3397644","DOIUrl":"10.1109/JQE.2024.3397644","url":null,"abstract":"This paper presents the design and characterization of an 8-channel integrated comb source spectral processor based on an arrayed-waveguide grating in loop-back configuration, with a channel spacing of 100 GHz. The arrayed waveguide grating has an unconventional mounting, for improved aberration and sidelobes. The design of the arrayed-waveguide grating, following a mathematical modeling method, is covered. The method presented gives an accurate result with the need for little computational power and no need for specific software. The devices, fabricated in a silicon nitride platform, are characterized for their spectral responses. The spectral processor is also characterized for both its amplitude modulation as well as the phase modulation. The phase modulation is characterized using optical frequency domain interferometry.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10521521","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140889282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm 测试基于量子阱的 InP 光放大器在 1300 纳米波长的放大和吸收参数的两段无源模式锁定激光器
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-05 DOI: 10.1109/jqe.2024.3372583
J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente
{"title":"Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm","authors":"J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente","doi":"10.1109/jqe.2024.3372583","DOIUrl":"https://doi.org/10.1109/jqe.2024.3372583","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"5 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140044365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex Pulse Profile Optimization by Chromatic Dispersion Management in Coupled Opto-Electronic Oscillator Based on Semiconductor Optical Amplifier 通过基于半导体光放大器的耦合光电振荡器中的色散管理优化复杂脉冲轮廓
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-04 DOI: 10.1109/JQE.2024.3372575
Alexis Bougaud;Arnaud Fernandez;Aliou Ly;Stéphane Balac;Olivier Llopis
{"title":"Complex Pulse Profile Optimization by Chromatic Dispersion Management in Coupled Opto-Electronic Oscillator Based on Semiconductor Optical Amplifier","authors":"Alexis Bougaud;Arnaud Fernandez;Aliou Ly;Stéphane Balac;Olivier Llopis","doi":"10.1109/JQE.2024.3372575","DOIUrl":"10.1109/JQE.2024.3372575","url":null,"abstract":"An Ikeda map iterative numerical model completed with an analytical Gaussian analysis and experimental measurements of complex pulse profile and phase noise performance at 10 GHz are proposed. This work aims to study and optimize the chromatic dispersion of a fibered mode-locked laser (MLL) based on a semiconductor optical amplifier (SOA) as part of a coupled optoelectronic oscillator (COEO). We will demonstrate that a close to zero anomalous dispersion regime is preferred as it allows the generation of optical picosecond pulses with minimum full width at half maximum (FWHM) and maximizes the absolute value of chirp and peak power. This guarantees the generation of narrow and diffraction-limited optical pulses after the chromatic dispersion compensating stage prior photodetection in order to lower the phase noise of the microwave signal generated at 10 GHz but also for high-order microwave harmonics synthesis.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140037400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
98 fs High Energy Stable Hybrid Mode-Locked Nonlinear Polarization Rotation With CuO-Doped ZnO Saturable Absorber 98 fs 高能稳定混合模式锁定非线性极化旋转与氧化铜掺杂氧化锌可饱和吸收体
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-03 DOI: 10.1109/JQE.2024.3396425
H. Ahmad;M. A. M. Lutfi;M. Z. Samion;M. K. A. Zaini;N. Yusoff
{"title":"98 fs High Energy Stable Hybrid Mode-Locked Nonlinear Polarization Rotation With CuO-Doped ZnO Saturable Absorber","authors":"H. Ahmad;M. A. M. Lutfi;M. Z. Samion;M. K. A. Zaini;N. Yusoff","doi":"10.1109/JQE.2024.3396425","DOIUrl":"10.1109/JQE.2024.3396425","url":null,"abstract":"The investigation of a fiber laser utilizing ytterbium-doped hybrid passively mode-locking, featuring a novel copper oxide-doped zinc oxide saturable absorber (CuO-ZnO SA), has been realized. The hybrid mode-locked (hybrid-ML) fiber laser integrates the nonlinear polarization rotation (NPR) technology with the CuO-ZnO-SA, producing remarkable characteristics with a central wavelength of 1045 nm, a 3-dB bandwidth spanning 18.26 nm, an ultra-short pulse width of 98 fs, a repetition frequency of 1.96 MHz, and an impressive signal-to-noise ratio of 51 dB. This research demonstrates a substantial enhancement in laser performance compared to NPR mode-locking alone. Notably, the pulse width experiences a significant compression, reduced by 39 fs, while the signal-to-noise ratio sees a noteworthy improvement of 11 dB. Furthermore, when contrasted with passively mode-locked pulse lasers relying solely on NPR technology, the hybrid passively mode-locked fiber laser attains a substantial reduction in output pulse width, surpassing 98 fs. These findings show the significant potential of the hybrid-ML system in the realm of ultrafast lasers, offering a promising avenue for future applications in cutting-edge research and technology.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-11"},"PeriodicalIF":2.5,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence 建模 3 微米级掺铒氟化物光纤激光器的立方能量传输速率依赖性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-01 DOI: 10.1109/JQE.2024.3372580
William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier
{"title":"Modeling the 3-Micron Class Er-Doped Fluoride Fiber Laser With a Cubic Energy Transfer Rate Dependence","authors":"William Bisson;Alexandre Michaud;Pascal Paradis;Réal Vallée;Martin Bernier","doi":"10.1109/JQE.2024.3372580","DOIUrl":"10.1109/JQE.2024.3372580","url":null,"abstract":"We propose an energy transfer model with a cubic atomic population dependence to accurately model the behavior of various reported high-power erbium-doped fluoride fiber lasers operating near 2.8 microns. We first show that the previously introduced weakly interacting (WI) and strongly interacting (SI) models are not adequate for precisely modeling such high-power erbium-doped fluoride fiber lasers. We compare results obtained with the WI and SI models to the proposed model by simulating 4 different highly doped (7 mol.%) fiber lasers previously reported in the literature. Laser efficiencies and powers are reproduced with great accuracy. In addition, four other fiber laser systems based on erbium concentrations varying from 1–6 mol.% are also simulated with good accuracy using the proposed model with the exact same set of spectroscopic parameters, which confirms its validity for various erbium doping concentrations. Redshifting of laser wavelength is also taken into account by considering the full cross section spectra and computing signal powers over several wavelength channels.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-9"},"PeriodicalIF":2.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140018546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band 带有金纳米粒子的锥形光纤等离子体传感器在 1500 纳米波段的高灵敏度特性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-02-22 DOI: 10.1109/JQE.2024.3366468
Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka
{"title":"High Sensitivity Characteristics of Tapered Fiber Plasmon Sensor With Gold Nanoparticles in 1500 nm Wavelength Band","authors":"Masahiro Yamamoto;Tianpeng Ji;Aya Miyazaki;Yuichi Matsushima;Hiroshi Ishikawa;Katsuyuki Utaka","doi":"10.1109/JQE.2024.3366468","DOIUrl":"10.1109/JQE.2024.3366468","url":null,"abstract":"A tapered fiber plasmon sensor with a tip angle of about 30 degrees was fabricated to realize optical absorption and application to an optical sensor using localized plasmon in the 1500 nm wavelength band. The sharp tip angle of a single-mode fiber (SMF) was well controlled by using a highly GeO2-doped single-mode fiber (SMF) and optimizing the etching conditions with buffered fluoric acid. Gold nanoparticles (Au-NPs) with a diameter of 40 nm were deposited by treating the surface of a tipped SMF with silane coupling. The relationship between Au NPs deposition time and deposition ratio was studied to control Au NPs distribution and pursue higher sensitivities. The wavelength sensitivity of 662 nm/RIU was expected at Au NPs deposition ratio of 34.9 % in the analysis, and actually a high sensitivity of 677 nm/RIU at 35.3 % was experimentally demonstrated.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信