IEEE Journal of Quantum Electronics最新文献_第8页

Sensitive Measurement of Optical Nonlinearities Using a Single Beam 单光束光学非线性的灵敏测量

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-29 DOI: 10.1109/JQE.2025.3597889

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IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-28 DOI: 10.1109/JQE.2025.3601938

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IEEE Journal of Quantum Electronics Publication Information IEEE量子电子学杂志出版信息

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IEEE Journal of Quantum Electronics Pub Date : 2025-08-28 DOI: 10.1109/JQE.2025.3601932

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IEEE Journal of Quantum Electronics Information for Authors IEEE量子电子信息作者杂志

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IEEE Journal of Quantum Electronics Pub Date : 2025-08-28 DOI: 10.1109/JQE.2025.3601936

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Generation of Dispersive Waves in Double-Ring Core Fiber for High-Order OAM Modes 双环芯光纤中高阶OAM模式色散波的产生

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IEEE Journal of Quantum Electronics Pub Date : 2025-08-13 DOI: 10.1109/JQE.2025.3598606

Wenpu Geng;Zhi Zeng;Yiwen Zhang;Yuxi Fang;Changjing Bao;Zhongqi Pan;Yang Yue

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Improve GaN-Based Green Micro-LEDs Performance With AlGaN/InGaN Multiple Quantum Wells Structure by V-Pits Engineering 基于v坑工程的AlGaN/InGaN多量子阱结构改善gan基绿色微型led性能

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-13 DOI: 10.1109/JQE.2025.3598724

Hsin-Yu Liu;Chao-Hsu Lai;Dongkai Yang;Zong-Min Lin;Zhongying Zhang;Sheng-Po Chang;Shoou-Jinn Chang

{"title":"Improve GaN-Based Green Micro-LEDs Performance With AlGaN/InGaN Multiple Quantum Wells Structure by V-Pits Engineering","authors":"Hsin-Yu Liu;Chao-Hsu Lai;Dongkai Yang;Zong-Min Lin;Zhongying Zhang;Sheng-Po Chang;Shoou-Jinn Chang","doi":"10.1109/JQE.2025.3598724","DOIUrl":"https://doi.org/10.1109/JQE.2025.3598724","url":null,"abstract":"The V-pits have been widely reported as a special structure in GaN wurtzite materials, which can improve hole injection efficiency and screen non-radiative recombination centers. Therefore, it is of great importance to utilize the characteristics of V-pits and study its growth mechanism for improving the opto-electronic performance and luminous efficiency of GaN-based micro light-emitting diodes (<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>-LEDs). In this work, we have fabricated green AlGaN quantum barrier (QB) <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>-LEDs to introduce V-pits engineering and investigated the opto-electrical performance and intrinsic mechanisms. The results of low-temperature EL and SEM measurements indicated that the introduction of Aluminum in QBs leads to better hole injection efficiency due to increasing the V-pits area ratio and more uniform carrier distribution within QWs. The CL and EDX results show that AlGaN QB can form higher potential barrier height between side-wall MQWs and c-plane MQWs, thereby enhancing the V-pits screening effect. The EL characteristics indicate that there is a better EQE, lower forward voltage and better efficiency-droop ratio in AlGaN QB <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>-LEDs. Thermal resistance, junction temperature and aging tests indicate that AlGaN QB <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>-LEDs have better thermal stability and lifespan. These results provide a reference for improving the quantum efficiency and opto-electronic performance of GaN-based green <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>-LEDs by V-pits engineering.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145674772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Non-Zero Dispersion-Shifted Fiber With Trench-Assisted Ring Core for Orbital Angular Momentum Modes 轨道角动量模式的沟槽辅助环芯非零色散位移光纤

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-11 DOI: 10.1109/JQE.2025.3597904

Yuxiang Huang;Wenqian Zhao;Yiwen Zhang;Yuanpeng Liu;Wenpu Geng;Zhongqi Pan;Lianshan Yan;Yang Yue

{"title":"Non-Zero Dispersion-Shifted Fiber With Trench-Assisted Ring Core for Orbital Angular Momentum Modes","authors":"Yuxiang Huang;Wenqian Zhao;Yiwen Zhang;Yuanpeng Liu;Wenpu Geng;Zhongqi Pan;Lianshan Yan;Yang Yue","doi":"10.1109/JQE.2025.3597904","DOIUrl":"https://doi.org/10.1109/JQE.2025.3597904","url":null,"abstract":"Orbital angular momentum (OAM) based multiplexing technology leverages the spatial information of optical fields, offering potential for expanding optical communication capacity and improving spectral efficiency. In this work, a non-zero dispersion-shifted fiber with trench-assisted ring core is proposed for optimized dispersion management. The impact of various parameters on the chromatic dispersion of fiber is investigated. At 1550 nm, the designed fiber exhibits a minimum dispersion of 2.42 ps/nm/km for the EH <inline-formula> <tex-math>${}_{mathbf {1,1}}$ </tex-math></inline-formula> mode and a maximum dispersion of 8.71 ps/nm/km for the HE <inline-formula> <tex-math>${}_{mathbf {14,1}}$ </tex-math></inline-formula> mode. A total of 50 OAM modes adhere to the ITU-T G.655.C standard, with differential mode delays maintained below 4.25 ps/m. Additionally, the fiber features an effective mode area exceeding 982 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m<inline-formula> <tex-math>${}^{mathbf {2}}$ </tex-math></inline-formula> and a nonlinearity coefficient below <inline-formula> <tex-math>$7.23times 10$ </tex-math></inline-formula><inline-formula> <tex-math>${}^{mathbf {-4}}$ </tex-math></inline-formula>/W/m, ensuring robust support for OAM mode transmission.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Theoretical Investigation of Optoelectronic Oscillators Near Bifurcation for Radio-Frequency Sensing 用于射频传感的光电振荡器近分岔理论研究

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-08 DOI: 10.1109/JQE.2025.3597248

Brenden Glover;Joseph Suelzer;Gautam Vemuri

{"title":"Theoretical Investigation of Optoelectronic Oscillators Near Bifurcation for Radio-Frequency Sensing","authors":"Brenden Glover;Joseph Suelzer;Gautam Vemuri","doi":"10.1109/JQE.2025.3597248","DOIUrl":"https://doi.org/10.1109/JQE.2025.3597248","url":null,"abstract":"Motivated by our recently reported experimental results of a sub-threshold narowband OEO subject to RF injection, we analytically and numerically investigate the steady-state and dynamic behavior of an OEO in the free-running and RF injected cases. This system is analyzed near the bifurcation operating points with a focus on the zeroth-order bifurcation corresponding to threshold. We utilize stability analysis, linearization, and a slowly-varying envelope approach around bifurcations to investigate the time signatures of the OEO response, in particular, the role of the filter bandwidth and external time delay. The influence of the time delay on the trajectory of a period doubling route is analytically and numerically characterized. Near the zeroth-order free-running bifurcation, we model injected RF signal perturbations and investigate the steady-state and transient response. The RF amplification is analytically characterized below and near the zeroth-order free-running bifurcation of the OEO, focusing on the influence of the gain and external time delay. Finally, in the presence of a pulsed RF signal, we derive an analytic model that replicates the transient response of the OEO, which exhibits a series of diminishing steps leading to saturation. This approach exhibits excellent agreement with the recently reported experimental and numerical results.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-10"},"PeriodicalIF":2.1,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-Power Photodiodes With Optimized Electrode Design 优化电极设计的大功率光电二极管

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-08 DOI: 10.1109/JQE.2025.3597249

Tengmu Chen;Xiaojun Xie;Chao Wei;Wei Pan;Lianshan Yan

{"title":"High-Power Photodiodes With Optimized Electrode Design","authors":"Tengmu Chen;Xiaojun Xie;Chao Wei;Wei Pan;Lianshan Yan","doi":"10.1109/JQE.2025.3597249","DOIUrl":"https://doi.org/10.1109/JQE.2025.3597249","url":null,"abstract":"we demonstrate a back-illuminated flip-chip bonded modified uni-traveling carrier photodiodes by optimizing coplanar waveguide on AlN to improve the bandwidth and output power of the photodiode. The 3-dB bandwidth of the optimized devices increased from 56 GHz to 67 GHz for the <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m diameter photodiode, and from 39 GHz to 46 GHz for the <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m diameter device, representing an approximate 20% improvement in both cases. Thanks to the improved high-frequency performance of the devices, the photodiodes with diameters of <inline-formula> <tex-math>$22~mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m exhibit high RF output powers of 23.8 dBm at 30 GHz and 17 dBm at 65 GHz, respectively. The <inline-formula> <tex-math>$14~mu $ </tex-math></inline-formula>m diameter PD exhibits low phase noise, with the maximum phase variation of the RF signal remaining within 10 degrees across the photocurrent range of 5 mA to 50 mA. The phase noise of optically generated RF signals, exacerbated by coupling amplitude noise on an optical pulse train to phase noise (AM-PM), exhibits a null at 17 mA. Additionally, the fully packaged module with a <inline-formula> <tex-math>$22~mu $ </tex-math></inline-formula>m diameter photodiode exhibits a 3-dB bandwidth of 40 GHz and a high RF output power of 16.6 dBm at 40 GHz. This study lays the groundwork for the development of high-performance microwave photonics system and the generation of ultra-low noise microwave signals.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Time-Bin Phase-Encoding Quantum-Secured LiDAR Against Spoofing Attacks 抗欺骗攻击的时bin相位编码量子安全激光雷达

IF 2.1 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2025-08-04 DOI: 10.1109/JQE.2025.3595820

Dong Wang;Liangjiang Zhou;Juanying Zhao;Yibo Zhao

{"title":"Time-Bin Phase-Encoding Quantum-Secured LiDAR Against Spoofing Attacks","authors":"Dong Wang;Liangjiang Zhou;Juanying Zhao;Yibo Zhao","doi":"10.1109/JQE.2025.3595820","DOIUrl":"https://doi.org/10.1109/JQE.2025.3595820","url":null,"abstract":"Robust and secure ranging is essential for numerous light detection and ranging (LiDAR) applications. Traditional LiDAR systems, however, are susceptible to deception jamming, such as intercept-and-resend spoofing attacks, due to their use of classical signals for interrogating non-cooperative targets. While quantum-secured imaging protocols have been proposed to counter these attacks, practical models have been scarce. This paper presents a quantum-secured LiDAR protocol using time-bin phase-encoded quantum states for simultaneous ranging and security assessment. Ranging is done via cross-correlating signals, and security assessment by statistically analyzing error rates. We develop an analytical model to evaluate the system’s resilience against intercept-resend spoofing attacks, demonstrating through numerical simulations that such attacks can be detected with high probability and low false-alarm rates under certain conditions. The scheme is robust against polarization disturbances and phase drifts, and can be implemented using existing technology, signifying its potential in quantum radar applications to improve the security and reliability of optical ranging and imaging systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0