{"title":"Mitigating the Effects of Concave Damage by Adding a Lining Layer in a Ring-Core Fiber for Improving Propagation of Orbital Angular Momentum Modes","authors":"Xiaohui Wang;Yongze Yu;Dongdong Deng;Shuai Mao;Yang Wang;Haoyu Gu;Yingxiong Song;Fufei Pang;Liyun Zhuang;Song Yang;Xiaofeng He;Chao Wang;Tiezhu Zhu;Yudong Yang","doi":"10.1109/JQE.2023.3332704","DOIUrl":"10.1109/JQE.2023.3332704","url":null,"abstract":"In order to support the transmission of orbital angular momentum (OAM) modes effectively, the ring-core fiber has received a lot of attention due to the similar structure of the electric field distribution with the intensity profile of OAM mode. Both photonic crystal fibers and other micro-structured fibers almost contain a ring-core structure to support the transmission of more OAM modes. However, the middle of the ring-core fiber is usually a large air hole, and such a structure makes it difficult to manufacture the ring-core perfectly. Concave damage may occur in the ring-core. The effects of concave damage on the transmission of OAM modes are analyzed. The concave damage leads to a large effective refractive index difference between the odd and even modes of vector mode, and a method for proper compensation is proposed. The lining is added to the inner side of the ring-core, which is made of the same material as the cladding, and slightly increasing the refractive index of the lining material promotes the performance of the compensation. After numerical simulation, the walk-off distance can be increased by a factor of 2–20 after compensation.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135703710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy","authors":"Lakshay Gautam;Junhee Lee;Michael Richards;Manijeh Razeghi","doi":"10.1109/JQE.2023.3325254","DOIUrl":"https://doi.org/10.1109/JQE.2023.3325254","url":null,"abstract":"We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of \u0000<inline-formula> <tex-math>$320times 256$ </tex-math></inline-formula>\u0000 focal plane array.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taiyi Chen;Yu Huang;Pei Zhou;Penghua Mu;Shuiying Xiang;V. N. Chizhevsky;Nianqiang Li
{"title":"Receptive Field-Based All-Optical Spiking Neural Network for Image Processing","authors":"Taiyi Chen;Yu Huang;Pei Zhou;Penghua Mu;Shuiying Xiang;V. N. Chizhevsky;Nianqiang Li","doi":"10.1109/JQE.2023.3325227","DOIUrl":"10.1109/JQE.2023.3325227","url":null,"abstract":"We report on a novel structure of a receptive field (RF)-based multi-layer all-optical neural network using a micropillar laser with a saturable absorber (SA) for image processing. From the perspective of biological vision, the realization of image processing based on the RF provides the biological rationality for the machine vision implemented by the spiking neural network (SNN). By exploiting the fast physical mechanisms of gain and absorption in the SA laser, the photonic spike-timing-dependent plasticity (STDP) curves are achieved to train the weights. Here, the source image pixels are mapped into the temporal information of spike trains injected into the neural network through the temporal coding method called time-to-first-spike encoding. Different source images are processed and tested by the proposed photonic SNN. Simulation results show that our proposed system can process not only simple binary images but also complex color images under the adjustment of STDP rules. When considering the robustness, we demonstrate the tolerance of the image segmentation to the time jitter. These results indicate that our proposed photonic SNN can achieve high-resolution processing of complex source images. Additionally, the time-multiplexing technique can be further adopted to simplify the RF structure, which is expected to reduce the complexity of the whole system, thus facilitating physical applications. Our work offers the prospect for a high-speed photonic spiking platform for image processing.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135057000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe
{"title":"High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging","authors":"Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe","doi":"10.1109/JQE.2023.3325256","DOIUrl":"10.1109/JQE.2023.3325256","url":null,"abstract":"We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135058867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin
{"title":"AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth","authors":"Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin","doi":"10.1109/JQE.2023.3325238","DOIUrl":"https://doi.org/10.1109/JQE.2023.3325238","url":null,"abstract":"AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at \u0000<inline-formula> <tex-math>$Gamma $ </tex-math></inline-formula>\u0000 point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb pBn Photodetectors","authors":"Yinlin Zhang;Chuang Li;Daqian Guo;Keming Cheng;Kai Shen;Jiang Wu","doi":"10.1109/JQE.2023.3325233","DOIUrl":"https://doi.org/10.1109/JQE.2023.3325233","url":null,"abstract":"The application of the barrier architecture exhibits the potential in reducing the noise current and improving the performance of photodetectors. However, the development of mid-infrared InSb barrier detector is lagging far behind its III-V counterparts due to the problem of lattice mismatch. In this paper, we proposed two InSb barrier detectors that have reduced dark current and raised operating temperatures with the help of commercial software APSYS platform. The incorporation of a In0.72 Al0.28Sb barrier architecture to the InSb absorber offers a significant dark current reduction over the conventional InSb photodiode, regardless the presence of strain-induced defects within the barrier layers. At 150 K, the InSb bulk barrier detector has a cutoff wavelength at \u0000<inline-formula> <tex-math>$5.65 mu text{m}$ </tex-math></inline-formula>\u0000. With a barrier design, the dark current, \u0000<inline-formula> <tex-math>$9.96times 10^{-3}text{A}$ </tex-math></inline-formula>\u0000/cm2 at −220 mV, is about 77 times lower than the InSb photodiode and the specific detectivity is about \u0000<inline-formula> <tex-math>$2.07times 10 ^{11}$ </tex-math></inline-formula>\u0000 cm Hz\u0000<inline-formula> <tex-math>$^{1/2}$ </tex-math></inline-formula>\u0000/W with a–220 mV bias voltage, which brings approximately an order of magnitude of performance improvement.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sonali Basak;Santu Sarkar;Abhijit K. Mukhopadhyay;Nikhil Ranjan Das;Madhusudan Mishra
{"title":"A Design Approach for a Homogeneous Hole-Assisted Multi-Core Fiber Through Hole-Allocation Around the Central Core for Minimizing Crosstalk","authors":"Sonali Basak;Santu Sarkar;Abhijit K. Mukhopadhyay;Nikhil Ranjan Das;Madhusudan Mishra","doi":"10.1109/JQE.2023.3322678","DOIUrl":"https://doi.org/10.1109/JQE.2023.3322678","url":null,"abstract":"In this paper, a new design of seven-core hole-assisted multi-core fiber with surrounding each core is presented. Here, the holes are assumed to be filled with materials having very low refractive index contrast with cladding. Coupling of light from the central core to the outer cores of seven-core structure is investigated by rotating the holes in the range +30° to −30° around the central core. The optimum range of angles for which coupling is very low is estimated for different values of core-pitch. An average value of crosstalk and power penalty are then calculated from the minimum coupling region for core pitch \u0000<inline-formula> <tex-math>$40~mu text{m}$ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$45~mu text{m}$ </tex-math></inline-formula>\u0000 where crosstalk goes below the threshold limit (which is taken as −30dB). An analytical model has also been developed based on proposed design and the results are seen to be in good agreement with the results from simulation. The proposed optimum design is extremely helpful for enhancing the capacity and efficiency of Space division multiplexing based applications with low crosstalk and power penalty.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"109157718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2023.3313751","DOIUrl":"https://doi.org/10.1109/JQE.2023.3313751","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/3/10189366/10265265.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49940695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}