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IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399890
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引用次数: 0
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IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399864
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引用次数: 0
Unconventional Computing Based on Four Wave Mixing in Highly Nonlinear Waveguides 基于高非线性波导中四波混合的非常规计算
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-27 DOI: 10.1109/JQE.2024.3405826
Kostas Sozos;Stavros Deligiannidis;Charis Mesaritakis;Adonis Bogris
{"title":"Unconventional Computing Based on Four Wave Mixing in Highly Nonlinear Waveguides","authors":"Kostas Sozos;Stavros Deligiannidis;Charis Mesaritakis;Adonis Bogris","doi":"10.1109/JQE.2024.3405826","DOIUrl":"10.1109/JQE.2024.3405826","url":null,"abstract":"In this work we numerically analyze a photonic unconventional accelerator based on the four-wave mixing effect in highly nonlinear waveguides. The proposed scheme can act as a fully analogue system for nonlinear signal processing directly in the optical domain. By exploiting the rich Kerr-induced nonlinearities, multiple nonlinear transformations of an input signal can be generated and used for solving complex nonlinear tasks. We first evaluate the performance of our scheme in the Santa-Fe chaotic time-series prediction. The true power of this processor is revealed in the all-optical nonlinearity compensation in an optical communication scenario where we provide results superior to those offered by strong machine learning algorithms with reduced power consumption and computational complexity. Finally, we showcase how the FWM module can be used as a reconfigurable nonlinear activation module being capable of reproducing characteristic functions such as sigmoid or rectified linear unit.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141165599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics publication information IEEE 量子电子学报》出版信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-26 DOI: 10.1109/JQE.2024.3379791
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引用次数: 0
Blank Page 空白页
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-26 DOI: 10.1109/JQE.2024.3379797
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引用次数: 0
IEEE Journal of Quantum Electronics information for authors IEEE 期刊《量子电子学》为作者提供的信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-26 DOI: 10.1109/JQE.2024.3379795
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引用次数: 0
Demonstration of Inherently Low Differential Phase Noise Across C-Band in InP Integrated, Amplifying Optical Phased Arrays 在 InP 集成放大光学相控阵中演示 C 波段固有的低差分相位噪声
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-22 DOI: 10.1109/JQE.2024.3404009
B. S. Vikram;Marco Gagino;A. Millan-Mejia;L. Augustin;K. A. Williams;V. Dolores Calzadilla
{"title":"Demonstration of Inherently Low Differential Phase Noise Across C-Band in InP Integrated, Amplifying Optical Phased Arrays","authors":"B. S. Vikram;Marco Gagino;A. Millan-Mejia;L. Augustin;K. A. Williams;V. Dolores Calzadilla","doi":"10.1109/JQE.2024.3404009","DOIUrl":"10.1109/JQE.2024.3404009","url":null,"abstract":"Optical phased arrays (OPAs) enable reliable and agile solid-state beam scanning for light detection and ranging (LiDAR), coherent beam combining, and free-space optical (FSO) communication systems. The performance of these systems strongly depends on the properties of the far-field pattern such as extinction ratio and side lobe suppression ratio, for maximizing the range and reliability of operation. Differential phase noise (DPN), a measure of the difference in time-varying phase fluctuations between the phased array channels, influences these characteristics, usually requiring the use of multiple phase-locked loops in fiber-based beam combining systems. In the present study, for the first time, we rigorously measure the differential phase noise between adjacent optical phased array channels integrated with phase modulators and in-line semiconductor optical amplifiers driven over a wide range of current densities in a generic InP photonic integrated platform. With the amplifiers driven at a current density of 5 kA/cm\u0000<sup>2</sup>\u0000, the OPA channels generated an RMS differential phase noise of less than 10 mrad across the C-band, proving the capabilities of the InP photonic platform in inherently maintaining a high degree of temporal coherence between adjacent channels. The influence of the measured differential phase noise on the far-field pattern and the pointing error are analytically evaluated. The integrated platform’s inherently low differential phase noise renders it suitable for implementing LiDAR and short-range FSO communication systems without active phase locking, significantly reducing system complexity.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10536137","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141149328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectrally Pure W-Band RF Carrier Generation With Packaged Silicon Photonics Circuit 利用封装硅光子电路生成光谱纯净的 W 波段射频载波
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-21 DOI: 10.1109/JQE.2024.3380552
Claudio Porzi;Marco Chiesa;Alessandra Bigongiari;Aina Serrano Rodrigo;Marc Sorel;Davide Rotta;Luca Roselli;Antonio D’Errico;Antonella Bogoni;Antonio Malacarne
{"title":"Spectrally Pure W-Band RF Carrier Generation With Packaged Silicon Photonics Circuit","authors":"Claudio Porzi;Marco Chiesa;Alessandra Bigongiari;Aina Serrano Rodrigo;Marc Sorel;Davide Rotta;Luca Roselli;Antonio D’Errico;Antonella Bogoni;Antonio Malacarne","doi":"10.1109/JQE.2024.3380552","DOIUrl":"10.1109/JQE.2024.3380552","url":null,"abstract":"A packaged silicon photonics radio-frequency (RF) synthesizer operating in the millimeter (mm-) wave band suitable for clock signal distribution in b5G/6G radio access networks is realized and experimentally characterized. The assembly include a photonic integrated circuit (PIC) acting as a frequency multiplier for a local oscillator (LO) reference at microwave frequencies and a printed circuit board (PCB) hosting a custom bias tee designed to provide a wideband matching condition over more than 6 GHz around 20GHz for the input LO signal and supporting high power levels for efficient frequency multiplication operation. Measurements performed on a 100GHz generated RF signal via five-fold multiplication of a LO wave at 20 GHz indicate a low phase noise level of -97dBc/Hz at an offset of 10kHz from the carrier with a limited excess timing jitter of less than 2fs with respect to the LO signal, making the circuit operating nearly as an ideal frequency multiplier.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140200379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron 亚微米级倍增宽度的 InGaAs/InP 单光子雪崩二极管分析
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-09 DOI: 10.1109/JQE.2024.3399176
Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang
{"title":"Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron","authors":"Kai Qiao;Yu Chang;Zefang Xu;Fei Yin;Liyu Liu;Jieying Wang;Chang Su;Linmeng Xu;Mengyan Fang;Chunliang Liu;Jinshou Tian;Xing Wang","doi":"10.1109/JQE.2024.3399176","DOIUrl":"10.1109/JQE.2024.3399176","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 4","pages":"1-7"},"PeriodicalIF":2.5,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission 用于光通信传输的 1×4 集成微透镜高速率光电探测器阵列
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-08 DOI: 10.1109/JQE.2024.3374126
Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang
{"title":"1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission","authors":"Xiaowei Yang;Weifang Yuan;Xiaofeng Duan;Xianjie Li;Kai Liu;Yongqing Huang","doi":"10.1109/JQE.2024.3374126","DOIUrl":"10.1109/JQE.2024.3374126","url":null,"abstract":"Toward the application of 400 G optical receiver chips in optical communication systems, this paper presents a \u0000<inline-formula> <tex-math>$1times 4$ </tex-math></inline-formula>\u0000 photodetector (PD) array with a monolithic integrated InP microlenses structure. The absorption layer of the PD array in question includes the non-depleted, partially depleted, and depleted regions. This third-order composite absorber layer accelerates the diffusion of electrons in the absorber layer and balances the transport times of holes and electrons. Therefore, the high-speed and high responsivity characteristics of the device can be realized. The integration of InP microlenses on the backside of the PD allows the effective photosensitive surface area to be increased and the incident light alignment deviation to be compensated. Tests yielded a 3-dB bandwidth of the PD array at 1310 nm greater than 40 GHz, with a peak responsivity of 0.64 A/W. The responsivity of two types of PDs was measured when incident at a distance of \u0000<inline-formula> <tex-math>$10~mu text{m}$ </tex-math></inline-formula>\u0000 away from the main optical axis. The responsivity of the integrated microlenses decreased to 67.05% of the maximum value. Compared to the device without integrated microlenses, the responsivity increased by 66.76%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 3","pages":"1-8"},"PeriodicalIF":2.5,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140076302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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