IEEE Journal of Quantum Electronics最新文献_第6页

Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures 锰植入氮化镓 pi-n 结构中的光增强室温磁性和双光子效应

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-12-29 DOI: 10.1109/JQE.2023.3348112

John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse

{"title":"Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures","authors":"John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse","doi":"10.1109/JQE.2023.3348112","DOIUrl":"https://doi.org/10.1109/JQE.2023.3348112","url":null,"abstract":"The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by \u0000<inline-formula> <tex-math>$0.2~mu _{B}$ </tex-math></inline-formula>\u0000/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139399819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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2023 Index IEEE Journal of Quantum Electronics Vol.59 2023 索引 IEEE《量子电子学报》第 59 卷

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IEEE Journal of Quantum Electronics Pub Date : 2023-12-22 DOI: 10.1109/JQE.2023.3345875

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Steady-State Semi-Analytical Modeling of p-Doped Quantum Dot Lasers Thermal Characteristics and Extrapolation to Membrane Lasers 对掺杂量子点激光器热特性的稳态半分析建模以及对薄膜激光器的推断

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-12-13 DOI: 10.1109/JQE.2023.3342180

Mattéo Chobé;Karim Hassan

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IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333159

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TechRxiv: Share Your Preprint Research with the World! techxiv:与世界分享你的预印本研究!

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IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333719

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IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息

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IEEE Journal of Quantum Electronics Pub Date : 2023-11-29 DOI: 10.1109/JQE.2023.3333153

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Carrier Transport and Pulse Compression of an Opposed-Contact GaAs Photoconductive Switch at Low-Energy Optical Excitation 低能量光激发下对置接触砷化镓光电导开关的载流子传输和脉冲压缩

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-11-28 DOI: 10.1109/JQE.2023.3337707

Chun Liu;Ming Xu;Chengjie Wang;Shengtao Chen;Jiahao Chang;Wenhao Wang

{"title":"Carrier Transport and Pulse Compression of an Opposed-Contact GaAs Photoconductive Switch at Low-Energy Optical Excitation","authors":"Chun Liu;Ming Xu;Chengjie Wang;Shengtao Chen;Jiahao Chang;Wenhao Wang","doi":"10.1109/JQE.2023.3337707","DOIUrl":"https://doi.org/10.1109/JQE.2023.3337707","url":null,"abstract":"The photoconductive semiconductor switch (PCSS) is one of the most promising devices in pulsed power technology, and its transient output characteristics strongly depend on the internal photo-generated carrier transport. In this paper, the transient output characteristics of an opposed-contact GaAs PCSS are obtained at 3.0-5.35 kV at low-energy optical excitation. In contrast to the 8 ns optical pulse, the pulse width of the switching waveform is compressed to 2.2 ns, corresponding to a compression ratio of 72%. The electric field threshold of 38 kV/cm is verified for the pulse compression effect (PCE) in our experiment. The maximum output amplitude is 2.27 kV with a 660 ps rise time, and the relevant transmission efficiency is 43.7%. The transient electric field distribution of the GaAs PCSS at the bias voltage corresponding to the PCE is simulated by a two-dimension model. The influence of carrier transport on pulse compression is analyzed numerically during the spatiotemporal variation of the electric field. Results indicate that the PCE is attributed to the negative differential mobility (NDM) effect and the electric field shielding (EFS) effect. The characteristics of an ultrafast, compressed pulse, along with the increased output, provide the specific guidance for high-power applications at high repetition rates.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138678716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Method for Determining the Formation Position of Comb Tooth of Kerr Micro-Ring 确定克尔微环梳齿形成位置的方法

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IEEE Journal of Quantum Electronics Pub Date : 2023-11-28 DOI: 10.1109/JQE.2023.3335246

Hang Shen;Chaoying Zhao

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Mitigating the Effects of Concave Damage by Adding a Lining Layer in a Ring-Core Fiber for Improving Propagation of Orbital Angular Momentum Modes 通过在环芯光纤中添加衬里层来减轻凹面损伤的影响，从而改善轨道角动量模式的传播

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-11-14 DOI: 10.1109/JQE.2023.3332704

Xiaohui Wang;Yongze Yu;Dongdong Deng;Shuai Mao;Yang Wang;Haoyu Gu;Yingxiong Song;Fufei Pang;Liyun Zhuang;Song Yang;Xiaofeng He;Chao Wang;Tiezhu Zhu;Yudong Yang

{"title":"Mitigating the Effects of Concave Damage by Adding a Lining Layer in a Ring-Core Fiber for Improving Propagation of Orbital Angular Momentum Modes","authors":"Xiaohui Wang;Yongze Yu;Dongdong Deng;Shuai Mao;Yang Wang;Haoyu Gu;Yingxiong Song;Fufei Pang;Liyun Zhuang;Song Yang;Xiaofeng He;Chao Wang;Tiezhu Zhu;Yudong Yang","doi":"10.1109/JQE.2023.3332704","DOIUrl":"10.1109/JQE.2023.3332704","url":null,"abstract":"In order to support the transmission of orbital angular momentum (OAM) modes effectively, the ring-core fiber has received a lot of attention due to the similar structure of the electric field distribution with the intensity profile of OAM mode. Both photonic crystal fibers and other micro-structured fibers almost contain a ring-core structure to support the transmission of more OAM modes. However, the middle of the ring-core fiber is usually a large air hole, and such a structure makes it difficult to manufacture the ring-core perfectly. Concave damage may occur in the ring-core. The effects of concave damage on the transmission of OAM modes are analyzed. The concave damage leads to a large effective refractive index difference between the odd and even modes of vector mode, and a method for proper compensation is proposed. The lining is added to the inner side of the ring-core, which is made of the same material as the cladding, and slightly increasing the refractive index of the lining material promotes the performance of the compensation. After numerical simulation, the walk-off distance can be increased by a factor of 2–20 after compensation.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135703710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging 高功率二极管激光表面老化过程的高分辨率热分析

IF 2.5 3区工程技术

IEEE Journal of Quantum Electronics Pub Date : 2023-10-19 DOI: 10.1109/JQE.2023.3325256

Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe

{"title":"High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging","authors":"Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe","doi":"10.1109/JQE.2023.3325256","DOIUrl":"10.1109/JQE.2023.3325256","url":null,"abstract":"We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135058867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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