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IEEE Journal of Quantum Electronics最新文献

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Pulse Compression in Ho:ZBLAN Photonic Crystal Fiber Using a NOLM Configuration for Ultrashort Mid-IR Generation 利用NOLM结构在Ho:ZBLAN光子晶体光纤中进行超短中红外脉冲压缩
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-11-28 DOI: 10.1109/JQE.2025.3638679
G. Sornambigai;A. Esther Lidiya;R. Vasantha Jayakantha Raja
{"title":"Pulse Compression in Ho:ZBLAN Photonic Crystal Fiber Using a NOLM Configuration for Ultrashort Mid-IR Generation","authors":"G. Sornambigai;A. Esther Lidiya;R. Vasantha Jayakantha Raja","doi":"10.1109/JQE.2025.3638679","DOIUrl":"https://doi.org/10.1109/JQE.2025.3638679","url":null,"abstract":"We propose and design a holmium-doped ZBLAN (Ho:ZBLAN) tapered photonic crystal fiber (TPCF) for generating ultrashort mid-infrared (mid-IR) pulses at <inline-formula> <tex-math>$2.86~mu $ </tex-math></inline-formula>m, utilizing a nonlinear optical loop mirror configuration (NOLM). The dispersion and nonlinear properties of the TPCF are engineered using a self-similar tapering technique, which gradually varies the core diameter and pitch along the fiber length. Initially, an undoped ZBLAN TPCF is investigated with this approach to enable the generation of low-pedestal, few-cycle ultrashort pulses at <inline-formula> <tex-math>$2.86~mu $ </tex-math></inline-formula>m. The study then extends to analyze the propagation dynamics of higher-order solitons in the Ho:ZBLAN TPCF under various low input powers, ensuring operation below the fiber’s damage threshold. This analysis captures both the self-switching behavior of the NOLM and the self-similar pulse evolution within the fiber across different power levels. By optimizing the input pump power and fiber length, we demonstrate that a 5 ps pulse at <inline-formula> <tex-math>$2.8~mu $ </tex-math></inline-formula>m can be compressed to 187 fs after propagating through 4.3 m of fiber, achieving a maximum compression factor of 26.7, a quality factor of 1.12, and a minimal pedestal energy of 0.63%.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"62 1","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vector Vortex Beam Emission Using Higher Order Transverse Modes in a Buried Heterostructure Laser 埋置异质结构激光器高阶横模矢量涡束发射
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-11-07 DOI: 10.1109/JQE.2025.3630564
Soumi Pal;Arpit Khandelwal;Nitin Bhatia
{"title":"Vector Vortex Beam Emission Using Higher Order Transverse Modes in a Buried Heterostructure Laser","authors":"Soumi Pal;Arpit Khandelwal;Nitin Bhatia","doi":"10.1109/JQE.2025.3630564","DOIUrl":"https://doi.org/10.1109/JQE.2025.3630564","url":null,"abstract":"The 2D buried heterostructure (BH) laser with a symmetric transverse refractive index profile can generate radial and azimuthal polarized vector vortex beam (VVB) by exploiting the orthogonally polarized higher order transverse modes in pairs. We investigate the optimal structure and operating conditions for the stable generation of dual polarized modes under practical operating conditions, including gain saturation, spontaneous emission, carrier diffusion, and polarization sensitivity. As the corresponding BH laser supports higher order transverse modes, the dimensions of the active layers become larger than the diffusion length of the semiconductor. Thus, for the first time, we introduce the 2D diffusion model into the laser rate equation for higher order transverse modes. We show that the dynamic nature of the laser, due to nonlinear gain saturation and mode polarization, is suppressed by diffusion, resulting in more stable output under various operating conditions.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-11"},"PeriodicalIF":2.1,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guest Editorial JQE 60th Anniversary: The 2000’s JQE 60周年纪念：2000年代
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-11-04 DOI: 10.1109/JQE.2025.3609153
Alan E. Willner
{"title":"Guest Editorial JQE 60th Anniversary: The 2000’s","authors":"Alan E. Willner","doi":"10.1109/JQE.2025.3609153","DOIUrl":"https://doi.org/10.1109/JQE.2025.3609153","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-2"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11224953","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temporal Coupled-Mode Theory and the Presence of Non-Orthogonal Modes in Lossless Multimode Cavities 时间耦合模理论和无损多模腔中非正交模的存在
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-11-04 DOI: 10.1109/JQE.2025.3617185
{"title":"Temporal Coupled-Mode Theory and the Presence of Non-Orthogonal Modes in Lossless Multimode Cavities","authors":"","doi":"10.1109/JQE.2025.3617185","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617185","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid-State Time-of-Flight Range Camera 固态飞行时间范围相机
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-11-04 DOI: 10.1109/JQE.2025.3617257
{"title":"Solid-State Time-of-Flight Range Camera","authors":"","doi":"10.1109/JQE.2025.3617257","DOIUrl":"https://doi.org/10.1109/JQE.2025.3617257","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"1-8"},"PeriodicalIF":2.1,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pointing Error Influence on Quantum Key Distribution 指向误差对量子密钥分发的影响
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-10-31 DOI: 10.1109/JQE.2025.3627887
Yalçın Ata;Kamran Kiasaleh
{"title":"Pointing Error Influence on Quantum Key Distribution","authors":"Yalçın Ata;Kamran Kiasaleh","doi":"10.1109/JQE.2025.3627887","DOIUrl":"https://doi.org/10.1109/JQE.2025.3627887","url":null,"abstract":"Recently, quantum key distribution (QKD) has emerged as a prominent solution to provide secure and reliable communication in atmosphere. This paper investigates the effect of pointing error on the performance of QKD communication systems. The analytical solution of error and sift probabilities, quantum bit error rate (QBER) and secret key rate (SKR) are obtained depending on pointing error effect that is modeled by Rayleigh and Hoyt distributions. Our findings show that the increased beam waist, hence the increased pointing error, degrades the performance of QKD communication systems remarkably. Also, the symmetric pointing error, where horizontal and vertical pointing errors are equal, yields worse performance for QKD systems as compared to the asymmetric pointing error case where vertical and horizontal pointing errors are different. The undeniable effect of pointing error on the performance of QKD system highlights the importance of precise beam alignment to minimize the adverse effects of pointing errors, thereby ensuring the secure and efficient operation of QKD systems in various deployment scenarios.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-9"},"PeriodicalIF":2.1,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics Publication Information IEEE量子电子学杂志出版信息
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-10-30 DOI: 10.1109/JQE.2025.3618129
{"title":"IEEE Journal of Quantum Electronics Publication Information","authors":"","doi":"10.1109/JQE.2025.3618129","DOIUrl":"https://doi.org/10.1109/JQE.2025.3618129","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"C2-C2"},"PeriodicalIF":2.1,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11222768","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-10-30 DOI: 10.1109/JQE.2025.3618131
{"title":"Blank Page","authors":"","doi":"10.1109/JQE.2025.3618131","DOIUrl":"https://doi.org/10.1109/JQE.2025.3618131","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"C4-C4"},"PeriodicalIF":2.1,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11222769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics Information for Authors IEEE量子电子信息作者杂志
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-10-30 DOI: 10.1109/JQE.2025.3618135
{"title":"IEEE Journal of Quantum Electronics Information for Authors","authors":"","doi":"10.1109/JQE.2025.3618135","DOIUrl":"https://doi.org/10.1109/JQE.2025.3618135","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 5","pages":"C3-C3"},"PeriodicalIF":2.1,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11222770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145405393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar InGaAs/InP Avalanche Photodiode With a Triple-Step Diffusion Junction 具有三级扩散结的平面InGaAs/InP雪崩光电二极管
IF 2.1 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2025-10-22 DOI: 10.1109/JQE.2025.3624349
Qiong Wu;Yingjie Ma;Jingxian Bao;Liyi Yang;Shuangyan Deng;Yiwei He;Yueqi Zhai;Qinfei Xu;Junliang Liu;Lixia Zheng;Xue Li
{"title":"Planar InGaAs/InP Avalanche Photodiode With a Triple-Step Diffusion Junction","authors":"Qiong Wu;Yingjie Ma;Jingxian Bao;Liyi Yang;Shuangyan Deng;Yiwei He;Yueqi Zhai;Qinfei Xu;Junliang Liu;Lixia Zheng;Xue Li","doi":"10.1109/JQE.2025.3624349","DOIUrl":"https://doi.org/10.1109/JQE.2025.3624349","url":null,"abstract":"InGaAs/InP single-photon avalanche photodiode (SPAD) with a triple-step diffusion morphology is designed and fabricated. The avalanche probability distribution evolves from a toroidal shape to a Gaussian-like shape as compared with the conventional double-step diffusion. Free-running measurements indicate that the photon detection efficiency of the triple-step SPAD increases from 3.4% to 11% in comparison with a double-step SPAD with the same thickness of the avalanche region and under the same conditions. Meanwhile, the dark count rate (DCR) and the afterpulsing probability (APP) are also decreased from 820 to 25 kHz and from 80% to 43% under a hold-off time of <inline-formula> <tex-math>$8~mu $ </tex-math></inline-formula>s, respectively. Consistently higher activation energies of both the dark current and the DCR are obtained for the triple-step SPAD, tentatively attributed to the evolvement of the dominant source of dark carriers from the thermal generation in the InGaAs absorber to the trap-assisted tunneling in the InP multiplier. Theoretical simulations indicate a faster detrapping time of carriers within the avalanche region accounts for the reduced APP for the triple-step SPAD with a higher peak E-field.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 6","pages":"1-6"},"PeriodicalIF":2.1,"publicationDate":"2025-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145510137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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