使用拓扑绝缘体 (Sb2Te3) 作为饱和吸收体的掺钬光纤激光器中的模式锁定和 Q 开关

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2024-09-09 DOI:10.1109/JQE.2024.3456073

H. Ahmad;K. Kamaruzzaman;M. Z. Samion

{"title":"使用拓扑绝缘体 (Sb2Te3) 作为饱和吸收体的掺钬光纤激光器中的模式锁定和 Q 开关","authors":"H. Ahmad;K. Kamaruzzaman;M. Z. Samion","doi":"10.1109/JQE.2024.3456073","DOIUrl":null,"url":null,"abstract":"This work demonstrates mode-locking and Q-switching in a holmium-doped fiber laser (HDFL) using topological insulator (TI) antimony telluride (Sb2Te3) as the saturable absorber (SA). The TI was drop-casted on an arc-shaped fiber to generate mode-locked pulses and used in thin-film form to generate Q-switched pulses. The mode-locked pulses obtained were centered at 2081.1 nm with a repetition rate of 13.4 MHz, signal-to-noise ratio of 42 dB, and 1.85 ps pulse width. The Q-switched pulses were generated at the center wavelength of 2086.3 nm within the pump power of 1.55 W until 1.80 W. Within this range, the repetition rate peaked at 50.76 kHz and the pulse width dropped to a minimum value of \n<inline-formula> <tex-math>$2.64~\\mu $ </tex-math></inline-formula>\ns. To the best of the author’s knowledge, this is the first work to use a topological insulator in an HDFL to generate both mode-locked and Q-switched pulses.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mode-Locking and Q-Switching in Holmium Doped Fiber Laser Using Topological Insulator (Sb₂Te₃) as Saturable Absorber\",\"authors\":\"H. Ahmad;K. Kamaruzzaman;M. Z. Samion\",\"doi\":\"10.1109/JQE.2024.3456073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work demonstrates mode-locking and Q-switching in a holmium-doped fiber laser (HDFL) using topological insulator (TI) antimony telluride (Sb2Te3) as the saturable absorber (SA). The TI was drop-casted on an arc-shaped fiber to generate mode-locked pulses and used in thin-film form to generate Q-switched pulses. The mode-locked pulses obtained were centered at 2081.1 nm with a repetition rate of 13.4 MHz, signal-to-noise ratio of 42 dB, and 1.85 ps pulse width. The Q-switched pulses were generated at the center wavelength of 2086.3 nm within the pump power of 1.55 W until 1.80 W. Within this range, the repetition rate peaked at 50.76 kHz and the pulse width dropped to a minimum value of \\n<inline-formula> <tex-math>$2.64~\\\\mu $ </tex-math></inline-formula>\\ns. To the best of the author’s knowledge, this is the first work to use a topological insulator in an HDFL to generate both mode-locked and Q-switched pulses.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10670221/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10670221/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这项研究利用拓扑绝缘体（TI）碲化镉锑（Sb2Te3）作为可饱和吸收体（SA），演示了掺钬光纤激光器（HDFL）中的锁模和调 Q 开关。将拓扑绝缘体滴铸在弧形光纤上以产生锁模脉冲，并以薄膜形式用于产生 Q 开关脉冲。获得的锁模脉冲以 2081.1 nm 为中心，重复频率为 13.4 MHz，信噪比为 42 dB，脉冲宽度为 1.85 ps。据作者所知，这是首次在 HDFL 中使用拓扑绝缘体同时产生锁模脉冲和 Q 开关脉冲。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mode-Locking and Q-Switching in Holmium Doped Fiber Laser Using Topological Insulator (Sb₂Te₃) as Saturable Absorber

This work demonstrates mode-locking and Q-switching in a holmium-doped fiber laser (HDFL) using topological insulator (TI) antimony telluride (Sb2Te3) as the saturable absorber (SA). The TI was drop-casted on an arc-shaped fiber to generate mode-locked pulses and used in thin-film form to generate Q-switched pulses. The mode-locked pulses obtained were centered at 2081.1 nm with a repetition rate of 13.4 MHz, signal-to-noise ratio of 42 dB, and 1.85 ps pulse width. The Q-switched pulses were generated at the center wavelength of 2086.3 nm within the pump power of 1.55 W until 1.80 W. Within this range, the repetition rate peaked at 50.76 kHz and the pulse width dropped to a minimum value of

$2.64~\mu $

s. To the best of the author’s knowledge, this is the first work to use a topological insulator in an HDFL to generate both mode-locked and Q-switched pulses.

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.