{"title":"基于自动化智能设计系统的高饱和功率超快光电二极管","authors":"Junjing Huang;Xiaofeng Duan;Kai Liu;Yongqing Huang;Xiaomin Ren","doi":"10.1109/JQE.2024.3512436","DOIUrl":null,"url":null,"abstract":"The rapid development of inverse design algorithms and the increasing availability of high-speed computing resources have made it possible to exploit heuristic algorithms to assist the design of photonic devices. This paper presents an automated intelligent design system for semiconductor photodetectors, which is capable of identifying the optimal performance of the photodetector under arbitrary material distribution. The aforementioned method was employed for the design of a modified uni-traveling carrier photodetector (MUTC-PD), exhibiting a bandwidth of 232GHz(@-5V) and an RF output power of 16.799dBm(@100GHz). In comparison to the original structure and traditional manual scanning methods, the bandwidth of this device has been increased by 96GHz and 25GHz, respectively, which serves to illustrate the effectiveness and superiority of this approach. Furthermore, the system is also instrumental in the discovery of new material combinations and structural designs, thereby driving innovation and advancement in the field of semiconductor photodetector technology.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-8"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultrafast Photodiodes With High Saturation Power Based on an Automated Intelligent Design System\",\"authors\":\"Junjing Huang;Xiaofeng Duan;Kai Liu;Yongqing Huang;Xiaomin Ren\",\"doi\":\"10.1109/JQE.2024.3512436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The rapid development of inverse design algorithms and the increasing availability of high-speed computing resources have made it possible to exploit heuristic algorithms to assist the design of photonic devices. This paper presents an automated intelligent design system for semiconductor photodetectors, which is capable of identifying the optimal performance of the photodetector under arbitrary material distribution. The aforementioned method was employed for the design of a modified uni-traveling carrier photodetector (MUTC-PD), exhibiting a bandwidth of 232GHz(@-5V) and an RF output power of 16.799dBm(@100GHz). In comparison to the original structure and traditional manual scanning methods, the bandwidth of this device has been increased by 96GHz and 25GHz, respectively, which serves to illustrate the effectiveness and superiority of this approach. Furthermore, the system is also instrumental in the discovery of new material combinations and structural designs, thereby driving innovation and advancement in the field of semiconductor photodetector technology.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":\"61 1\",\"pages\":\"1-8\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10781312/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10781312/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Ultrafast Photodiodes With High Saturation Power Based on an Automated Intelligent Design System
The rapid development of inverse design algorithms and the increasing availability of high-speed computing resources have made it possible to exploit heuristic algorithms to assist the design of photonic devices. This paper presents an automated intelligent design system for semiconductor photodetectors, which is capable of identifying the optimal performance of the photodetector under arbitrary material distribution. The aforementioned method was employed for the design of a modified uni-traveling carrier photodetector (MUTC-PD), exhibiting a bandwidth of 232GHz(@-5V) and an RF output power of 16.799dBm(@100GHz). In comparison to the original structure and traditional manual scanning methods, the bandwidth of this device has been increased by 96GHz and 25GHz, respectively, which serves to illustrate the effectiveness and superiority of this approach. Furthermore, the system is also instrumental in the discovery of new material combinations and structural designs, thereby driving innovation and advancement in the field of semiconductor photodetector technology.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.