具有多级InAlAs/InAlGaAs倍增结构的平面InGaAs雪崩光电二极管

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2024-12-11 DOI:10.1109/JQE.2024.3514814

Qi Wang;Yingjie Ma;Bowen Liu;Runze Xia;Guixue Zhang;Yi Gu;Xue Li

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引用次数: 0

摘要

设计并制作了一种具有三级级联InAlAs/InAlGaAs倍增结构的平面In0.53Ga0.47As雪崩光电二极管（APD）。形成双锌扩散p-n结抑制周长过早击穿。在室温下，在击穿电压附近获得了4.8 nA的低暗电流，器件直径为40~\mu $ m，最大增益带宽积为216 GHz。通过在每个倍增阶段掺杂薄的In0.52Al0.48As子电荷层来调制e场分布。此外，每一级的In0.52Al0.24Ga0.24As层还引入了电子势阱和空穴势阱。在200 K时，测量到的孔引发的最大增益因子和多余噪声因子分别为77和F=6.3，与基于死区乘法理论的预测结果非常吻合。这些结果表明，在保持低暗电流的同时，平面多级倍增制程是制造低过量噪声的apd的可行途径。

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Planar InGaAs Avalanche Photodiode With Multi-Stage InAlAs/InAlGaAs Multiplication Structure

A planar In0.53Ga0.47As avalanche photodiode (APD) with a triple-stage cascaded InAlAs/InAlGaAs multiplication structure is designed and fabricated. Double zinc-diffusion p-n junction is formed to suppress the perimeter premature breakdown. A low dark current of 4.8 nA at around breakdown voltage is obtained at room temperature for a

$40~\mu $

m diameter device with a maximum gain-bandwidth product of 216 GHz. The E-field profile is modulated by doping of a thin In0.52Al0.48As subcharge layer within each multiplication stage. Moreover, electron and hole potential wells are also introduced by the In0.52Al0.24Ga0.24As layers within each stage. The measured hole-initiated maximum gain factor and excess noise factor are 77 and F=6.3 at 200 K, respectively, which well agree with the predicted results base on the dead-space multiplication theory. These results indicate the planar multi-stage multiplication regime is a viable route for fabrication of APDs towards low excess noise while maintaining of a low dark current.

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.