4H-SiC雪崩光电二极管的快速自由运行电路

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2024-11-18 DOI:10.1109/JQE.2024.3501195

Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo

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引用次数: 0

摘要

4H-SiC apd在紫外检测中表现出优异的性能。在高性能单光子探测应用中，对淬火电路提出了要求。本文提出了一种采用被动淬火和主动复位的4H-SiC APD快速自由运行电路，其死区时间为23.8 ns。研究了4H-SiC APD在不同死区时间下的检测性能。光子探测效率和探测距离随死区时间的减小而增大，在死区时间最短时达到最高。在275 nm处的死区时间为23.8 ns，探测距离为16.8 m，光子探测效率为15.5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes

4H-SiC APDs show excellent characteristics in ultraviolet detection. Requirements have been put forward for quenching circuits in high-performance single photon detection applications. Here, a fast free-running circuit is proposed with passive quenching and active resetting for the 4H-SiC APD, which achieves a 23.8 ns dead time. The detection performance of the 4H-SiC APD under different dead times were studied. The photon detection efficiency and detectable distance increase with the decreasing dead time, remaining the highest at the shortest dead time. A dead time of 23.8 ns, detectable distance of 16.8 m and photon detection efficiency of 15.5% at 275 nm are achieved.

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.