IEEE Photonics Technology Letters最新文献_第3页

Tunable Acoustically-Induced Fiber Gratings Based on the Anti-Resonant Hollow-Core Fiber 基于反谐振中空芯光纤的可调谐声诱导光纤光栅

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-26 DOI: 10.1109/LPT.2024.3468871

Ligang Huang;Yanxiang Zhao;Yujia Li;Shunli Liu;Hailin Zhou;Lei Gao;Guiyao Zhou;Tao Zhu

引用次数: 0

A Pulse-Duration Compensation Scheme for GHz Electro-Optic Frequency Comb 千兆赫电光合频的脉冲持续时间补偿方案

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-26 DOI: 10.1109/LPT.2024.3468647

Haoyun Zhang;Xuecheng Wu;Weiqi Jiang;Shining Zhu;Fengqiu Wang

{"title":"A Pulse-Duration Compensation Scheme for GHz Electro-Optic Frequency Comb","authors":"Haoyun Zhang;Xuecheng Wu;Weiqi Jiang;Shining Zhu;Fengqiu Wang","doi":"10.1109/LPT.2024.3468647","DOIUrl":"https://doi.org/10.1109/LPT.2024.3468647","url":null,"abstract":"Electro-optic frequency combs, generated by cascaded intensity and phase modulators, are known for their frequency agility. However, frequency detuning induced pulse distortion significantly hinders their applicability in asynchronous optical sampling. In this letter, we propose a scheme where a motor-driven optical delay line between the phase and intensity modulators serves as an effective pulse-duration compensation mechanism. A 10 GHz flat-topped optical frequency comb (OFC) at a central wavelength of 1552 nm is first optimized to output a 7.2 ps pulse. It is seen that the temporal pulses experience dramatic distortion and elongation (up to 130 ps) when frequency offset is present. Interestingly, the output pulse duration is periodically modulated by the frequency offset, and the associated period is inversely proportional to a system delay time (\u0000<inline-formula> <tex-math>$tau $ </tex-math></inline-formula>\u0000) that is fundamentally linked to the phase retardation between the intensity and phase modulators. In this scheme, we derive an algorithm that can drive the optical delay line in a deterministic way to counter the effect of frequency detuning, and successfully demonstrate an OFC tunable across 8- 12 GHz, with a constant pulse duration (\u0000<inline-formula> <tex-math>$sim ~7$ </tex-math></inline-formula>\u0000 ps). Our approach provides a practical solution for stabilizing pulse duration for repetition rate-tunable OFCs and can bring new capabilities in optical sensing and sampling.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Power Narrow Spectrum Second-Order DBR Laser Diode Operating Over a Wide Temperature Range 可在宽温度范围内工作的高功率窄光谱二阶 DBR 激光二极管

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-26 DOI: 10.1109/LPT.2024.3468389

Wang Xing;Cuiluan Wang;Zhenwu Liu;Fang Zhao;Lingni Zhu;Suping Liu;Xiaoyu Ma

{"title":"High Power Narrow Spectrum Second-Order DBR Laser Diode Operating Over a Wide Temperature Range","authors":"Wang Xing;Cuiluan Wang;Zhenwu Liu;Fang Zhao;Lingni Zhu;Suping Liu;Xiaoyu Ma","doi":"10.1109/LPT.2024.3468389","DOIUrl":"https://doi.org/10.1109/LPT.2024.3468389","url":null,"abstract":"Distributed Bragg Reflector laser diode (DBR-LD) plays a crucial role as pump sources due to its wavelength stability. This work firstly presents a \u0000<inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>\u0000 m wide \u0000<inline-formula> <tex-math>$2^{mathrm {nd}}$ </tex-math></inline-formula>\u0000-order DBR-LD with surface etched grating. Based on scattering matrix method (SMM) and eigenmode expansion (EME) method, the \u0000<inline-formula> <tex-math>$2^{mathrm {nd}}$ </tex-math></inline-formula>\u0000-order grating was designed as a period of 288.1 nm and a duty of cycle of 25%. Using ultra violet nanoimprint lithography (UV-NIL) and Inductively Coupled Plasma (ICP) dry etching technique, the grating was firstly fabricated with a depth of \u0000<inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>\u0000 m from surface. The laser diode achieved a maximum output power of 9.52 W with a full width at half-maximum (FWHM) spectral width of 0.4 nm in CW mode and an average wavelength drift coefficient of 0.0645 nm/°C over a wide temperature range from \u0000<inline-formula> <tex-math>$- 10~^{circ }$ </tex-math></inline-formula>\u0000 C to \u0000<inline-formula> <tex-math>$100~^{circ }$ </tex-math></inline-formula>\u0000 C in pulsed mode, expanded the operating temperature.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications 用于光通信的具有不对称电极的自供电 Ga₂O₃ MSM 太阳能盲 UV 光致发光器件

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-24 DOI: 10.1109/LPT.2024.3466948

Biao Gong;Shiting Dai;Xiao Wang;Bingjie Ye;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Junjun Xue;Yu Liu;Weiying Qian;Mei Ge;Guofeng Yang

{"title":"Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications","authors":"Biao Gong;Shiting Dai;Xiao Wang;Bingjie Ye;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Junjun Xue;Yu Liu;Weiying Qian;Mei Ge;Guofeng Yang","doi":"10.1109/LPT.2024.3466948","DOIUrl":"https://doi.org/10.1109/LPT.2024.3466948","url":null,"abstract":"This work demonstrated a self-powered Ga2O3-based metal–semiconductor–metal solar-blind ultraviolet photodetector using the following asymmetric electrodes at varying size ratios: a Schottky interdigitated electrode with wide fingers and an ohmic interdigitated electrode with narrow fingers. At a bias of 0 V, the responsivity of the device featuring Schottky electrode to ohmic electrode size ratios of 8:1 is 3.64 mA/W. Thus, increasing electrode size ratios led to significant enhancements in device self-powered performance. Leveraging the energy band structure theory, we elucidated the rationale behind the improved self-powered performance of the devices, attributing it to the broadening of the depletion region at the metal–semiconductor interface, which facilitated photogenerated carrier transport. The device exhibited a high responsivity of 495 A/W under a forward bias of 10 V while still maintaining a considerable responsivity of 16.7 A/W under a reverse bias of 10 V. Additionally, the device realizes UV optical communication adopting international Morse code.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142376845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photonic Neural Activation Function Based on High-Speed Electro-Absorption Modulated Laser 基于高速电吸收调制激光的光子神经激活功能

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-24 DOI: 10.1109/LPT.2024.3466888

Qi Tian;Yunlong Li;Qihui Zhou;Yu Han;Ruigang Zhang;Kaiyuan Wang;Deming Liu;Shuang Zheng;Minming Zhang

{"title":"Photonic Neural Activation Function Based on High-Speed Electro-Absorption Modulated Laser","authors":"Qi Tian;Yunlong Li;Qihui Zhou;Yu Han;Ruigang Zhang;Kaiyuan Wang;Deming Liu;Shuang Zheng;Minming Zhang","doi":"10.1109/LPT.2024.3466888","DOIUrl":"https://doi.org/10.1109/LPT.2024.3466888","url":null,"abstract":"Integrated optics hold great potential to accelerate deep learning tasks with high clock rates, parallelism and low-loss data transmission. Silicon photonic integrated circuits can perform large-scale and low-power-consuming optical linear operations by using weighting mechanism through linear optics. However, on-chip light attenuation and nonlinear activation functions are still huge challenges for large-scale optical neural networks. Here, we demonstrate a high-speed electro-absorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser that can deliver high output lasing power for larger scale expansion while acting as a nonlinear activation function unit. With the use of the obtained nonlinear activation function, a convolutional neural network (CNN) is simulated to perform a handwritten digit classification benchmark task with high accuracy. Thanks to its compactness, high response speed and laser integration, the demonstrated nonlinear unit has the potential to be used in heterogeneously integrated large-scale photonic neural networks.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sidelobe Suppression Method with Improved CLEAN Algorithm for Pulse Compression OTDR 用于脉冲压缩 OTDR 的带改进 CLEAN 算法的侧叶抑制方法

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-23 DOI: 10.1109/LPT.2024.3465501

Yi Huang;Xiaofeng Chen;Wei Shen;Ziyi Wei;Chengyong Hu;Chuanlu Deng;Lisen Wang;Qi Zhang;Wei Chen;Xiaobei Zhang;Lin Chen;Wei Jin;Jianming Tang;Tingyun Wang

引用次数: 0

Tapered Optical Fiber Coated With a Polyester Polymer as a Curvature Sensor 涂有聚酯聚合物的锥形光纤作为曲率传感器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-23 DOI: 10.1109/LPT.2024.3466120

J. Castrellon-Uribe;J. J. Medina-Cabrera;M. C. Soto-Robles;J. A. Sandoval-Espino;R. E. Nuñez-Gómez

引用次数: 0

126 dB High Dynamic Range SPAD Frontend for Time of Flight Applications 用于飞行时间应用的 126 dB 高动态范围 SPAD 前端

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-20 DOI: 10.1109/LPT.2024.3465224

Maciej Wojtkiewicz;Bruce Rae;Robert K. Henderson

引用次数: 0

Dark Current Transport and Junction Capacitance Mechanism in InP One-Side Junction Photodiodes InP 单面结光电二极管中的暗电流传输和结电容机制

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-20 DOI: 10.1109/LPT.2024.3464865

Wei He;Zhongjun Jiang;Liang Wang

{"title":"Dark Current Transport and Junction Capacitance Mechanism in InP One-Side Junction Photodiodes","authors":"Wei He;Zhongjun Jiang;Liang Wang","doi":"10.1109/LPT.2024.3464865","DOIUrl":"https://doi.org/10.1109/LPT.2024.3464865","url":null,"abstract":"Photodiodes serve as pivotal components in optical data links, where minimized dark current and junction capacitance is vital for improving the detection sensitivity and response speed of the devices. This study experimentally and theoretically demonstrates that the one-side junction photodiode (OSJ-PD) exhibits reduced dark current and diminished junction capacitance. Notably, the device has a capacitance density of \u0000<inline-formula> <tex-math>$2.2 times 10^{-4} mathrm {pF} / mu mathrm {m}^{2}$ </tex-math></inline-formula>\u0000 and a dark current density of \u0000<inline-formula> <tex-math>$2.4 times 10^{-5} mathrm {nA} / mu mathrm {m}^{2}$ </tex-math></inline-formula>\u0000 at −5 V bias. Numerical simulations of current-voltage characteristics reveal that Shockley-Read-Hall (SRH) and trap-assisted tunneling (TAT) currents dominate dark current at low reverse bias from 0 V to −14 V, while band-to-band tunneling (BBT) current prevails at higher reverse bias from −14 V to −20 V. This study, for the first time, explains the trend of the variation in the dark current curve with bias voltage based on the generation mechanisms of dark current. Furthermore, we have theoretically demonstrated that the dark current of the OSJ-PD is insensitive to defect density at low voltages, and attributed the low junction capacitance to the wide depletion layer nature of the OSJ-PDs. These findings provide a comprehensive understanding of carrier transport and give a demonstration to analyze the current variation within diverse photodiodes.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142368216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Etched FBG-Based Optical Fiber Sensor for Hg²+ Ion Detection in Aqueous Solution 用于检测水溶液中 Hg²+ 离子的蚀刻 FBG 型光纤传感器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2024-09-19 DOI: 10.1109/LPT.2024.3463879

Sunil Mohan;Nagendra Kumar

引用次数: 0