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IEEE Photonics Technology Letters最新文献

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Reliability Study of AlInGaAs Strained Multi-Quantum Well O-Band Laser Source AlInGaAs应变多量子阱o波段激光源可靠性研究
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-25 DOI: 10.1109/LPT.2025.3648566
Horacio I. Cantú;Antonio Samarelli;Iain Eddie
{"title":"Reliability Study of AlInGaAs Strained Multi-Quantum Well O-Band Laser Source","authors":"Horacio I. Cantú;Antonio Samarelli;Iain Eddie","doi":"10.1109/LPT.2025.3648566","DOIUrl":"https://doi.org/10.1109/LPT.2025.3648566","url":null,"abstract":"The reliability of a ridge waveguide AlInGaAs strained O-band InP laser design is characterized by means of 10 khrs of accelerated life test. Multiple stress conditions are used to estimate the device wear-out activation energy and bias current exponential factor using the Eyring equation. Time to failure for each stressed device is obtained from the parametric accelerated life test data. The laser operation bias current degradation is used to extract failure distributions. These distributions agree well with lognormal fits and are used to calculate the wear-out activation energy and bias current exponential factor. An activation energy and an exponential factor above 1.5 eV and 3, respectively, are obtained from operation bias current degradation analysis. Based on five stress conditions calculated acceleration factors, single digit failures in time are expected after 10 years of continuous operation.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 7","pages":"467-470"},"PeriodicalIF":2.5,"publicationDate":"2025-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wavelength-Tunable Cascade Raman Lasing beyond 2 Micrometer in a Tellurite Microresonator 碲微谐振腔中波长可调级联拉曼激光器
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-24 DOI: 10.1109/LPT.2025.3648305
Elena A. Anashkina;Arseny A. Sorokin;Alexey V. Andrianov
{"title":"Wavelength-Tunable Cascade Raman Lasing beyond 2 Micrometer in a Tellurite Microresonator","authors":"Elena A. Anashkina;Arseny A. Sorokin;Alexey V. Andrianov","doi":"10.1109/LPT.2025.3648305","DOIUrl":"https://doi.org/10.1109/LPT.2025.3648305","url":null,"abstract":"We experimentally demonstrate tunable cascade Raman lasing in a 34-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m microsphere fabricated from tungsten-tellurite glass, which possesses high and ultrabroadband Raman gain. Lasing was observed in the first cascade from 1665 nm to 1895 nm and in the second cascade from 1952 nm to 2189 nm when the pump wavelength was tuned from 1488 nm to 1612 nm. To the best of our knowledge, the 2189 nm wavelength is the longest wavelength ever achieved via Raman generation or other nonlinear optical processes in tellurite glass microresonators. We also constructed and analyzed a theoretical model incorporating four nonlinearly interacting Raman modes. The model accounts for two modes in the first cascade and two in the second. Each of these modes is associated with a different peak of the Raman gain function. The results of numerical simulations support and explain the experimental findings.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 7","pages":"451-454"},"PeriodicalIF":2.5,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145860193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Divergence Angle Extended-Cavity Single-Mode VCSEL Based on Dielectric DBR Mirror 基于介电DBR反射镜的低发散角扩展腔单模VCSEL
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-24 DOI: 10.1109/LPT.2025.3648028
Tongxin Wang;Pingping Qiu;Hengjie Zhou;Qiuhua Wang;Chaowei Si;Shuanglin Yue;Sheng Zhang;Qiang Kan
{"title":"Low Divergence Angle Extended-Cavity Single-Mode VCSEL Based on Dielectric DBR Mirror","authors":"Tongxin Wang;Pingping Qiu;Hengjie Zhou;Qiuhua Wang;Chaowei Si;Shuanglin Yue;Sheng Zhang;Qiang Kan","doi":"10.1109/LPT.2025.3648028","DOIUrl":"https://doi.org/10.1109/LPT.2025.3648028","url":null,"abstract":"We present a vertical cavity surface emitting laser (VCSEL) employing the extended-cavity structure and dielectric film reflector, with a <inline-formula> <tex-math>$4.5~mu $ </tex-math></inline-formula>m oxide aperture diameter. The laser operates in fundamental transverse mode with side-mode suppression ratio (SMSR) exceeding 30 dB at 1090 nm. The divergence angle is limited to only 4°, attributed to increased diffraction loss for high-order transverse modes and a larger mode field size facilitated by the extended-cavity. The top reflector comprises sputtered dielectric distributed Bragg reflector, while current spreading and partial reflectivity are facilitated by 3 pairs of p-doped DBRs. The device demonstrates a low thermal resistance of 1.3 K/mW and exhibits robust temperature stability. The combination of stable single-mode performance, minimal divergence angle, and low thermal resistance establish this VCSEL design as a promising candidate for high-performance single-mode VCSELs suitable for applications in atomic sensing and high-precision metrology.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 7","pages":"447-450"},"PeriodicalIF":2.5,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145861223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Neural Network Based on Convolutional Attention Filter for Small Area Alignment Mark 基于卷积注意滤波的小面积对齐标记神经网络
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-24 DOI: 10.1109/LPT.2025.3647795
Yuliang Long;Yan Tang;Xiaolong Cheng;Shaoyu Liu;Wei Liu;Yanfang Yang;Xinxiang Gong;Lixin Zhao;Yu He
{"title":"A Neural Network Based on Convolutional Attention Filter for Small Area Alignment Mark","authors":"Yuliang Long;Yan Tang;Xiaolong Cheng;Shaoyu Liu;Wei Liu;Yanfang Yang;Xinxiang Gong;Lixin Zhao;Yu He","doi":"10.1109/LPT.2025.3647795","DOIUrl":"https://doi.org/10.1109/LPT.2025.3647795","url":null,"abstract":"For moiré-based alignment technique, to meet the increasingly precision requirements, the alignment marks are designed to be more complex and larger in area. However, the space on the wafer for placing the alignment marks is very narrow. Therefore, advancing the miniaturization of alignment marks is a key direction for the development of this technology. Unfortunately, the mainstream frequency-based misalignment value analysis algorithms are challenging to apply to small-area alignment marks, as traditional filters struggle to accurately extract useful information from the frequency spectrum of the detection signal. To this end, we propose a neural network for analyzing moiré fringes based on convolutional attention filters (CAFN), which can achieve a direct mapping of small-area moiré fringe images to misalignment value. Experimental results show that on our test dataset, the average error of CAFN is 0.7nm, with a processing speed of 100 Hz.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 7","pages":"483-486"},"PeriodicalIF":2.5,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrections to “Etch Rate Dependence of Optical Loss in Silicon Photonics” 对“硅光子学中光损耗与蚀刻速率的关系”的修正
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-23 DOI: 10.1109/LPT.2025.3634873
Yeolheon Seong;Heedeuk Shin
{"title":"Corrections to “Etch Rate Dependence of Optical Loss in Silicon Photonics”","authors":"Yeolheon Seong;Heedeuk Shin","doi":"10.1109/LPT.2025.3634873","DOIUrl":"https://doi.org/10.1109/LPT.2025.3634873","url":null,"abstract":"Presents corrections to the paper, (Etch Rate Dependence of Optical Loss in Silicon Photonics).","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 6","pages":"365-365"},"PeriodicalIF":2.5,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11313735","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145808576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Programmable Correlation Detection Circuit for SPAD-Based LiDAR Applications 基于spad的激光雷达可编程相关检测电路
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-23 DOI: 10.1109/LPT.2025.3647768
Zerong Hu;Yukang Xie;Hanwen Zhang;Ziyun Yang;Baiquan Liu;Shaolin Liao;Xianbo Li
{"title":"A Programmable Correlation Detection Circuit for SPAD-Based LiDAR Applications","authors":"Zerong Hu;Yukang Xie;Hanwen Zhang;Ziyun Yang;Baiquan Liu;Shaolin Liao;Xianbo Li","doi":"10.1109/LPT.2025.3647768","DOIUrl":"https://doi.org/10.1109/LPT.2025.3647768","url":null,"abstract":"This letter presents a correlation detection circuit (CDC) with a programmable threshold for noise filtering in single-photon avalanche diode (SPAD)-based light detection and ranging (LiDAR) systems. A four-bit sorter based on combinational logic and an adjustable time window is employed for level-sensitive pulse correlation detection, which increases the pulse detection rate compared to existing edge-counting techniques when there exists pulse merging in a typical OR-Tree receiver structure. The threshold of the CDC is configurable to adapt to different noise strength. Fabricated in a <inline-formula> <tex-math>$0.18~mu $ </tex-math></inline-formula>m CMOS process, the proposed CDC achieves a significant improvement of the effective pulse detection rate by about 10 times in a macro-pixel containing four SPADs, where each SPAD has a typical dark count rate (DCR) of about 1 kHz.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 7","pages":"455-458"},"PeriodicalIF":2.5,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145861225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-19 DOI: 10.1109/LPT.2025.3641071
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引用次数: 0
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IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-19 DOI: 10.1109/LPT.2025.3641081
{"title":"Blank Page","authors":"","doi":"10.1109/LPT.2025.3641081","DOIUrl":"https://doi.org/10.1109/LPT.2025.3641081","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 24","pages":"C4-C4"},"PeriodicalIF":2.5,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11306112","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Photonics Technology Letters publication information IEEE Photonics Technology Letters出版信息
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-19 DOI: 10.1109/LPT.2025.3640998
{"title":"IEEE Photonics Technology Letters publication information","authors":"","doi":"10.1109/LPT.2025.3640998","DOIUrl":"https://doi.org/10.1109/LPT.2025.3640998","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 22","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11306186","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors
IF 2.5 3区 工程技术
IEEE Photonics Technology Letters Pub Date : 2025-12-19 DOI: 10.1109/LPT.2025.3641069
{"title":"IEEE Photonics Technology Letters Information for Authors","authors":"","doi":"10.1109/LPT.2025.3641069","DOIUrl":"https://doi.org/10.1109/LPT.2025.3641069","url":null,"abstract":"","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 23","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2025-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11305698","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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