IEEE Photonics Technology Letters最新文献_第10页

Ultra-Long-Distance Interferometric DOFS Over 300 km Without In-Line Repeater 超远距干涉DOFS超过300公里，无需在线中继器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-02-11 DOI: 10.1109/LPT.2025.3541081

Feng Shi;Rui Jin;Yunke Du;Chao Wang;Bo Jia

引用次数: 0

Optical Packaging of Surface-Normal Electroabsorption Modulator Arrays Using Passive Alignment 表面法向电吸收调制器阵列的无源对准光学封装

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-02-11 DOI: 10.1109/LPT.2025.3541016

Stefano Grillanda;Nagesh Basavanhally;Ting-Chen Hu;Rick Papazian;Mark Cappuzzo;Alaric Tate;Mark Earnshaw;Rose Kopf;Flavio Pardo

{"title":"Optical Packaging of Surface-Normal Electroabsorption Modulator Arrays Using Passive Alignment","authors":"Stefano Grillanda;Nagesh Basavanhally;Ting-Chen Hu;Rick Papazian;Mark Cappuzzo;Alaric Tate;Mark Earnshaw;Rose Kopf;Flavio Pardo","doi":"10.1109/LPT.2025.3541016","DOIUrl":"https://doi.org/10.1109/LPT.2025.3541016","url":null,"abstract":"Surface-normal electroabsorption modulators (SNEAMs) are devices with unique characteristics, such as small size, wide bandwidth and polarization insensitive behavior; however, due to the surface-normal configuration and since they operate in reflection, it is challenging to package fiber arrays to SNEAM arrays with many channels. Here, we present a novel approach to package fiber arrays to SNEAM arrays based on passive alignment. We realize an expanded-beam, multi-channel, optical coupling scheme by using a prism lens array and a lens array in between a SNEAM array chip and a standard single mode fiber array. We use this approach to assemble a SNEAM array engine with 8 channels without any active optical alignment. We show that our SNEAM array engine has coupling loss from the fiber inputs to the SNEAMs ranging from 1.2 dB for the best channel to 1.7 dB for the worst channel. Also, we validate our passive alignment packaging scheme by modulating the channels at 25 Gbit/s NRZ-OOK and show that the fiber array is pluggable into the SNEAM array engine. Finally, our approach is independent of the specific SNEAM design, and potentially can be extended to other surface-normal devices, such as lasers or photodiodes.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"265-268"},"PeriodicalIF":2.3,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interplay Between Modulation Instability (MI) and Optical Comb Generation in a Brillouin Fiber Resonator: Cascaded Brillouin Lasing Comb and Brillouin-Kerr Comb 调制不稳定性与布里渊光纤谐振腔光梳产生之间的相互作用：级联布里渊激光梳和布里渊-克尔梳

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-02-10 DOI: 10.1109/LPT.2025.3540275

Runhui Zhu;Zhiqiang Wang;Yang Li;Rui Zhou;Zuxing Zhang

{"title":"Interplay Between Modulation Instability (MI) and Optical Comb Generation in a Brillouin Fiber Resonator: Cascaded Brillouin Lasing Comb and Brillouin-Kerr Comb","authors":"Runhui Zhu;Zhiqiang Wang;Yang Li;Rui Zhou;Zuxing Zhang","doi":"10.1109/LPT.2025.3540275","DOIUrl":"https://doi.org/10.1109/LPT.2025.3540275","url":null,"abstract":"We have demonstrated the formation of two different types of optical frequency comb in a Brillouin fiber resonator with modulated pump technology. One is the Brillouin lasing comb (BLC) due to the cascaded Brillouin scattering. The latter is the Brillouin-Kerr frequency comb (BKC) that is formed because of the four-wave-mixing. The effect of modulation instability (MI) on the comb formation in these two different regimes is studied. In the first regime, the frequency spacing of the comb is determined by the Brillouin frequency shift. We have observed the competition and switching of MI and SBS in the resonator by changing the pump power. In the second regime, the modulated pump and its associated side frequencies serve as multiple frequency pumps, leading to the generation of BKC. The frequency spacing of BKC can be precisely tuned, depending on the modulation frequency of the pump. MI contributes to the BKC formation. Under a pump power of 1.4 W with a modulation frequency of 12 GHz, MI-assisted BKC with a spectrum covering over 30 nm is obtained. Our results deepen the understanding of the interaction between MI and Brillouin comb in Kerr resonators.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"257-260"},"PeriodicalIF":2.3,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Surface-Enhanced Mid-Infrared Laser Spectroscopy With Adaptive Spectrum Compensation 自适应光谱补偿的宽带表面增强中红外激光光谱学

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-02-05 DOI: 10.1109/LPT.2025.3539291

Jing Ni;Zhouzhuo Tang;Zihao Liu;Qijie Wang;Xia Yu

{"title":"Broadband Surface-Enhanced Mid-Infrared Laser Spectroscopy With Adaptive Spectrum Compensation","authors":"Jing Ni;Zhouzhuo Tang;Zihao Liu;Qijie Wang;Xia Yu","doi":"10.1109/LPT.2025.3539291","DOIUrl":"https://doi.org/10.1109/LPT.2025.3539291","url":null,"abstract":"External cavity-quantum cascade lasers (EC-QCLs) offer high spectral power density (SPD) over several hundred wavenumbers, making them ideal for broadband mid-infrared absorption spectroscopy. Surface-enhanced infrared absorption spectroscopy (SEIRA) leverages nanoantenna structure to enhance the signal in an infrared absorption spectrum. However, the highly uneven SPD of the EC-QCL and strong absorption of the SEIRA nanoantennas challenge the limited dynamic range of the detection system and thus introduce higher noise levels. Here, an adaptive spectrum compensation (ASC) method is proposed and applied in our home-built broadband surface-enhanced mid-infrared laser absorption spectrometer. The ASC method adaptively optimizes the laser beam and adjusts the SPD of the spectra reaching the detector with minimal loss. This reduces the dynamic range noise, detector noise and shot noise of the detection system, and allows quick adaptive switching between different background spectra. For our spectrometer, the ASC method has reduced the noise level of the absorption spectrum across 1660-975 cm−1 by more than 3 times. The proposed simple and low-cost spectrum compensation method could be applied to other tunable laser absorption spectroscopies with highly uneven SPD.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"277-280"},"PeriodicalIF":2.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dimmable Optical Camera Communications With WDM Using RGB and Infrared LEDs 使用RGB和红外led的WDM可调光光学相机通信

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-02-04 DOI: 10.1109/LPT.2025.3538487

Hai Huang;Xiaodi You;Jin Shi;Jian Chen;Changyuan Yu;Mingyi Gao;Gangxiang Shen

引用次数: 0

High Detection Efficiency 4H-SiC Avalanche Photodiode With Off-Center Top Electrode Structure 高检测效率的偏离中心顶部电极结构的4H-SiC雪崩光电二极管

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-30 DOI: 10.1109/LPT.2025.3536794

Yan Zhou;Tianyi Li;Xiaoqiang Tao;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu

{"title":"High Detection Efficiency 4H-SiC Avalanche Photodiode With Off-Center Top Electrode Structure","authors":"Yan Zhou;Tianyi Li;Xiaoqiang Tao;Weizong Xu;Dong Zhou;Feng Zhou;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu","doi":"10.1109/LPT.2025.3536794","DOIUrl":"https://doi.org/10.1109/LPT.2025.3536794","url":null,"abstract":"In this work, we report a high single photon detection efficiency 4H-SiC ultraviolet (UV) avalanche photodiode (APD) with an off-center top electrode structure. To alleviate the lateral-carrier-drift induced non-uniform gain distribution of SiC APDs, a half-ring shape top electrode structure is designed, in which the electrode is off-center placed on the <inline-formula> <tex-math>$[11overline 2 0]$ </tex-math></inline-formula> side of the circular mesa. Based on 2-dimensional photon count mapping, it is demonstrated that such device design can notably reduce the top electrode shadowing effect on the high-gain light sensitive region, thereby improving the single photon detection efficiency (SPDE) of the SiC APD. When operating in Geiger mode based on an active quenching circuit, the fabricated APD with the off-center top electrode structure shows a high SPDE of 36.7%, which is 28.7% higher than that of the control device with traditional symmetric electrode. Meanwhile, a relatively low dark count rate of ~14.4 Hz/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 is obtained. This work provides a new strategy for designing high detection efficiency SiC APDs.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 5","pages":"261-264"},"PeriodicalIF":2.3,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm 室温激光波长接近3.3 μm的高性能带间级联激光器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-28 DOI: 10.1109/LPT.2025.3535850

Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang

{"title":"High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm","authors":"Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang","doi":"10.1109/LPT.2025.3535850","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535850","url":null,"abstract":"We report significant advancements of interband cascade lasers (ICLs) with hybrid cladding layers. These 6-stage hybrid-cladding ICLs were able to lase in pulsed modes at temperatures up to 421 K, the highest ever reported among ICLs. The lasing wavelength was near <inline-formula> <tex-math>$3.3~mu $ </tex-math></inline-formula>m at 300 K with a pulsed threshold current density of 114 A/cm2, the lowest for ICLs with similar wavelengths. Also, they achieved a high voltage efficiency of ~82% and a record-low threshold input power density of 312 W/cm2 at 300 K. Facet-uncoated narrow-ridge ICLs operated in continuous wave (CW) mode at temperatures up to 364 K (91°C), which is more than 20 K higher than the previous record for epi-up mounted ICLs. The obtained CW threshold current density of 205 A/cm2 at 300 K is similar to the previous record (~200 A/cm2 at 300 K) achieved by a superlattice-cladding 10-stage ICL with emission near the long-held optimal wavelength of ICLs at <inline-formula> <tex-math>$3.6~mu $ </tex-math></inline-formula>m. Also, these ICLs at 300 K delivered CW output power of 25 mW/facet at 160 mA with substantially improved external quantum efficiency over previous ICLs at similar wavelengths.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"243-246"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Performance ZnO CQDs/MoSe₂ Heterojunction UV-Visible Broadband Photodetector 高性能ZnO CQDs/MoSe₂异质结紫外可见宽带光电探测器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-28 DOI: 10.1109/LPT.2025.3535626

Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit

{"title":"High Performance ZnO CQDs/MoSe₂ Heterojunction UV-Visible Broadband Photodetector","authors":"Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit","doi":"10.1109/LPT.2025.3535626","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535626","url":null,"abstract":"This letter reports an ITO/n-ZnO CQDs/n-MoSe2/Ag structure based ultraviolet-visible (UV-Vis) broadband photodetector where the n-n heterojunction between ZnO colloidal quantum dots (CQDs) and MoSe2 thin film fabricated on an Indium tin oxide (ITO) coated glass substrate forms the active region of the device. The ZnO CQDs synthesized by hot-injection method was spin-coated on the substrate while MoSe2 nano-powder synthesized by hydrothermal method was deposited on the ZnO CQDs layer by thermal evaporation method to obtain the ZnO CQDs/MoSe2 heterojunction. The heterojunction showed a broad absorption spectrum covering the UV-Vis region. Under applied bias voltage of 2 V, the proposed photodetector showed the maximum responsivity (R) of ~282 A/W, detectivity (D) of <inline-formula> <tex-math>$sim 9times 10 ^{12}$ </tex-math></inline-formula> Jones and external quantum efficiency (EQE) of ~90000% at 380 nm (with <inline-formula> <tex-math>$47~mu $ </tex-math></inline-formula>W/cm2 intensity) in the UV region whereas R ~16.15 A/W, D <inline-formula> <tex-math>$sim ~5.37times 10 ^{11}$ </tex-math></inline-formula> Jones, EQE ~3660% were measured at 550 nm (with 0.22 mW/cm2 intensity) in the visible region. The transient response analysis of the device showed a rise time (fall time) as 7.25 sec (2.25 sec) at 380 nm and 1.2 sec (2.2 sec) at 550 nm.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"247-250"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of P-Electrode Area Ratio on Micro-LED Optoelectronic Performance p -电极面积比对微型led光电性能的影响

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-27 DOI: 10.1109/LPT.2025.3534203

Shi-Biao Liu;Wen-An Guo;You-Cai Deng;Ming-He Wan;Mai-Jia Lin;Tao-Ming Liu;Yue-Lin;Hao-Chung Kuo;Yi-Jun Lu;Zhong Chen;Ting-Zhu Wu

引用次数: 0

High-Speed Planar InGaAs/InAlAs Avalanche Photodiode 高速平面InGaAs/InAlAs雪崩光电二极管

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-27 DOI: 10.1109/LPT.2025.3534294

Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han

{"title":"High-Speed Planar InGaAs/InAlAs Avalanche Photodiode","authors":"Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han","doi":"10.1109/LPT.2025.3534294","DOIUrl":"https://doi.org/10.1109/LPT.2025.3534294","url":null,"abstract":"This letter describes a planar avalanche photodiode (APD) with 3dB bandwidth of 40 GHz at gain of 2.5, which is the highest bandwidth among reported vertical planar InAlAs APD. The APD adopts selective Zn diffusion to form the planar structure. Scale of the APD can be easily reduced to meet the needs of high-speed operation. The added p/n double charge layers can accurately adjust the electric field distribution inside the APD. By optimizing the thickness of the absorption and the transit layers, a compromise can be determined between carrier transport time and capacitance to achieve high bandwidth. An equivalent circuit of planar APD was established, laying the foundation for characteristics performance optimization. The fabricated APD uses 90 nm InAlAs as the multiplication layer and the dark current is <inline-formula> <tex-math>$1~{mu } $ </tex-math></inline-formula>A. The responsivity of the top-incidence APD without anti-reflection is 0.15 A/W at <inline-formula> <tex-math>$1.55~{mu } $ </tex-math></inline-formula>m. The gain reaches 45 when the incident light intensity is <inline-formula> <tex-math>$10~{mu } $ </tex-math></inline-formula>W.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"235-238"},"PeriodicalIF":2.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0