Guan-Lin Su;Ranjeet Kumar;Duanni Huang;David Gold;Richard Jones;Haisheng Rong
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We demonstrate a heterogeneously integrated III-V/Si tunable laser fabricated on a 300-mm silicon photonics platform, achieving a wide tuning range from 1510 to 1570 nm with a side-mode suppression ratio (SMSR) above 50 dB, a Lorentzian linewidth below 30 kHz, and relative intensity noise less than −150 dBc/Hz. This laser delivers on-chip optical power exceeding 20 mW at 100 mA of bias current with low variability across a wafer. With closed-loop control, the laser frequency stability is maintained within ±1 GHz. This tunable laser can be readily integrated with other photonic components, such as wavelength lockers, modulators, and detectors, enabling fully integrated photonic chips for optical communications, sensing, and next-generation computing applications.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.