IEEE Photonics Technology Letters最新文献

High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-28 DOI: 10.1109/LPT.2025.3535850

Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang

{"title":"High Performance Interband Cascade Lasers With Room Temperature Lasing Wavelengths Near 3.3 μm","authors":"Yixuan Shen;Rui Q. Yang;Tetsuya D. Mishima;John D. Steward;Michael B. Santos;Xiaojun Wang","doi":"10.1109/LPT.2025.3535850","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535850","url":null,"abstract":"We report significant advancements of interband cascade lasers (ICLs) with hybrid cladding layers. These 6-stage hybrid-cladding ICLs were able to lase in pulsed modes at temperatures up to 421 K, the highest ever reported among ICLs. The lasing wavelength was near <inline-formula> <tex-math>$3.3~mu $ </tex-math></inline-formula>m at 300 K with a pulsed threshold current density of 114 A/cm2, the lowest for ICLs with similar wavelengths. Also, they achieved a high voltage efficiency of ~82% and a record-low threshold input power density of 312 W/cm2 at 300 K. Facet-uncoated narrow-ridge ICLs operated in continuous wave (CW) mode at temperatures up to 364 K (91°C), which is more than 20 K higher than the previous record for epi-up mounted ICLs. The obtained CW threshold current density of 205 A/cm2 at 300 K is similar to the previous record (~200 A/cm2 at 300 K) achieved by a superlattice-cladding 10-stage ICL with emission near the long-held optimal wavelength of ICLs at <inline-formula> <tex-math>$3.6~mu $ </tex-math></inline-formula>m. Also, these ICLs at 300 K delivered CW output power of 25 mW/facet at 160 mA with substantially improved external quantum efficiency over previous ICLs at similar wavelengths.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"243-246"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Performance ZnO CQDs/MoSe₂ Heterojunction UV-Visible Broadband Photodetector

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-28 DOI: 10.1109/LPT.2025.3535626

Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit

{"title":"High Performance ZnO CQDs/MoSe₂ Heterojunction UV-Visible Broadband Photodetector","authors":"Shikha Singh;Abhinav Pratap Singh;Satyabrata Jit","doi":"10.1109/LPT.2025.3535626","DOIUrl":"https://doi.org/10.1109/LPT.2025.3535626","url":null,"abstract":"This letter reports an ITO/n-ZnO CQDs/n-MoSe2/Ag structure based ultraviolet-visible (UV-Vis) broadband photodetector where the n-n heterojunction between ZnO colloidal quantum dots (CQDs) and MoSe2 thin film fabricated on an Indium tin oxide (ITO) coated glass substrate forms the active region of the device. The ZnO CQDs synthesized by hot-injection method was spin-coated on the substrate while MoSe2 nano-powder synthesized by hydrothermal method was deposited on the ZnO CQDs layer by thermal evaporation method to obtain the ZnO CQDs/MoSe2 heterojunction. The heterojunction showed a broad absorption spectrum covering the UV-Vis region. Under applied bias voltage of 2 V, the proposed photodetector showed the maximum responsivity (R) of ~282 A/W, detectivity (D) of <inline-formula> <tex-math>$sim 9times 10 ^{12}$ </tex-math></inline-formula> Jones and external quantum efficiency (EQE) of ~90000% at 380 nm (with <inline-formula> <tex-math>$47~mu $ </tex-math></inline-formula>W/cm2 intensity) in the UV region whereas R ~16.15 A/W, D <inline-formula> <tex-math>$sim ~5.37times 10 ^{11}$ </tex-math></inline-formula> Jones, EQE ~3660% were measured at 550 nm (with 0.22 mW/cm2 intensity) in the visible region. The transient response analysis of the device showed a rise time (fall time) as 7.25 sec (2.25 sec) at 380 nm and 1.2 sec (2.2 sec) at 550 nm.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"247-250"},"PeriodicalIF":2.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of P-Electrode Area Ratio on Micro-LED Optoelectronic Performance

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-27 DOI: 10.1109/LPT.2025.3534203

Shi-Biao Liu;Wen-An Guo;You-Cai Deng;Ming-He Wan;Mai-Jia Lin;Tao-Ming Liu;Yue-Lin;Hao-Chung Kuo;Yi-Jun Lu;Zhong Chen;Ting-Zhu Wu

引用次数: 0

High-Speed Planar InGaAs/InAlAs Avalanche Photodiode

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-27 DOI: 10.1109/LPT.2025.3534294

Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han

{"title":"High-Speed Planar InGaAs/InAlAs Avalanche Photodiode","authors":"Shuai Wang;Han Ye;Liyan Geng;Yimiao Chu;Yu Zheng;Qin Han","doi":"10.1109/LPT.2025.3534294","DOIUrl":"https://doi.org/10.1109/LPT.2025.3534294","url":null,"abstract":"This letter describes a planar avalanche photodiode (APD) with 3dB bandwidth of 40 GHz at gain of 2.5, which is the highest bandwidth among reported vertical planar InAlAs APD. The APD adopts selective Zn diffusion to form the planar structure. Scale of the APD can be easily reduced to meet the needs of high-speed operation. The added p/n double charge layers can accurately adjust the electric field distribution inside the APD. By optimizing the thickness of the absorption and the transit layers, a compromise can be determined between carrier transport time and capacitance to achieve high bandwidth. An equivalent circuit of planar APD was established, laying the foundation for characteristics performance optimization. The fabricated APD uses 90 nm InAlAs as the multiplication layer and the dark current is <inline-formula> <tex-math>$1~{mu } $ </tex-math></inline-formula>A. The responsivity of the top-incidence APD without anti-reflection is 0.15 A/W at <inline-formula> <tex-math>$1.55~{mu } $ </tex-math></inline-formula>m. The gain reaches 45 when the incident light intensity is <inline-formula> <tex-math>$10~{mu } $ </tex-math></inline-formula>W.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"235-238"},"PeriodicalIF":2.3,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2024 Index IEEE Photonics Technology Letters Vol. 36

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-23 DOI: 10.1109/LPT.2025.3532136

引用次数: 0

Error Probability of MPSK With Phase Errors in Dual-Hop FSO Communication Systems

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-20 DOI: 10.1109/LPT.2025.3531792

Jiashun Hu;Weiqiang Wu;Sunan Wang;Yuexiang Wu;Zaichen Zhang

引用次数: 0

Compact Broadband Edge Coupler Based on Trident Gratings for Silica Platform

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-20 DOI: 10.1109/LPT.2025.3532408

Manzhuo Wang;Yu Xin;Zhentao Yao;Tingyu Liu;Jimin Fang;Xiaoqiang Sun;Yuanda Wu;Daming Zhang

{"title":"Compact Broadband Edge Coupler Based on Trident Gratings for Silica Platform","authors":"Manzhuo Wang;Yu Xin;Zhentao Yao;Tingyu Liu;Jimin Fang;Xiaoqiang Sun;Yuanda Wu;Daming Zhang","doi":"10.1109/LPT.2025.3532408","DOIUrl":"https://doi.org/10.1109/LPT.2025.3532408","url":null,"abstract":"The silica platform offers large-scale, low-cost fabrication for planar lightwave circuits (PLC). The broadband and compact fiber-to-chip edge coupler is essential for high performance PLC chips. Here, a silica trident gratings-based edge coupler is theoretically designed and experimentally demonstrated. By CMOS compatible fabrication, the prepared coupler presents the fiber-to-chip coupling loss of 0.95 and 0.93 dB/facet at the optical wavelength 1310 and 1550 nm, respectively. The coupling loss varies from 0.41 to 1.36 dB/facet over the wavelength range from 1264 to 1620 nm. Specifically, the edge coupler features the large alignment tolerance of <inline-formula> <tex-math>$pm 3mu $ </tex-math></inline-formula> m and <inline-formula> <tex-math>$pm 3.5mu $ </tex-math></inline-formula> m for a 1-dB penalty along directions of waveguide width and height, respectively. The small footprint of <inline-formula> <tex-math>$8.6~mu $ </tex-math></inline-formula> m <inline-formula> <tex-math>$times 83.2~mu $ </tex-math></inline-formula> m offers the coupler potentials in compact PLC applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"227-230"},"PeriodicalIF":2.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Distributed Axial Strain Sensitivity in Fibers With Different Germanium Concentrations

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-17 DOI: 10.1109/LPT.2025.3531207

Jacek Olszewski;Marta Bernaś;Przemysław Chmielowski;Paweł Mergo;Waclaw Urbanczyk;Gabriela Statkiewicz-Barabach

引用次数: 0

Focal-Length Measurement of Multifocal Metalens by Using Far-Field Imaging

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-17 DOI: 10.1109/LPT.2025.3531044

Ming Zhou;Dengyu Shan;Jiaheng Gong;Haiyang Huang;Wei Li

引用次数: 0

Corrections to “Neural Network Ensemble for Precise Laser Spot Position Determination on a Quadrant Detector” 对“四象限探测器激光光斑精确定位的神经网络集成”的修正

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-01-15 DOI: 10.1109/LPT.2025.3525856

Micah Baleya;Hossam Shalaby;Kazutoshi Kato;Maha Elsabrouty

引用次数: 0