退火温度对钙钛矿薄膜ASE性能和载流子动力学的影响

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-07-02 DOI:10.1109/LPT.2025.3585140

Wei Wang;Yuan Zhang;Mingze Xia;Meng Zhang;Zhaohong Liu;Li Song;Yang Zhao;Yuanqin Xia

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引用次数: 0

摘要

准二维钙钛矿由于其独特的激子性质在多层结构中显示出作为激光增益介质的巨大潜力。飞秒激光光谱技术，以其卓越的时间分辨率而闻名，允许在分子和原子水平上观察超快的动态过程，超越了传统光谱方法的能力。本研究采用条纹光激发（SLE）和飞秒时间分辨瞬态吸收（TA）等多种光谱方法，研究了Dion-Jacobson型准二维钙钛矿（PDA）Cs ${}_{\text {n}-1}$ PbnBr ${}_{3\text {n}+1}$的放大自发发射（ASE）特性及其与载流子动力学的相关性。实验结果表明，较高的退火温度可以减少陷阱辅助复合和俄歇复合，从而提高辐射复合的效率。然而，过高的退火温度可能导致准二维钙钛矿的性能迅速下降。研究表明，优化退火温度可以改善钙钛矿薄膜的光学增益特性，从而支持其在激光增益介质领域的应用。

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Influence of the Annealing Temperature on ASE Properties and Carrier Dynamics of Perovskite Films

Quasi-two-dimensional perovskites demonstrate significant potential as laser gain media due to their unique excitonic properties in multilayer configurations. Femtosecond laser spectroscopy techniques, known for their exceptional temporal resolution, allow for the observation of ultrafast dynamic processes at the molecular and atomic levels, surpassing the capabilities of conventional spectroscopic methods. This study employs various spectroscopic methodologies, including stripe light excitation (SLE) and femtosecond time-resolved transient absorption (TA), to investigate the amplified spontaneous emission (ASE) characteristics of Dion-Jacobson type quasi-2D perovskite (PDA)Cs

${}_{\text {n}-1}$

PbnBr

${}_{3\text {n}+1}$

, along with its correlation to carrier dynamics. The experimental findings indicate that higher annealing temperatures can reduce trap-assisted recombination and Auger recombination, thereby enhancing the efficiency of radiative recombination. However, it is observed that excessively high annealing temperatures may lead to a rapid decline in the performance of the quasi-2D perovskite. The research suggests that optimizing the annealing temperature can improve the optical gain characteristics of perovskite films, thereby supporting their application in the field of laser gain media.

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.