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IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-28 DOI: 10.1109/LPT.2025.3553665

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IEEE Photonics Technology Letters Information for Authors IEEE Photonics Technology Letters for Authors

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-28 DOI: 10.1109/LPT.2025.3553611

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Thermal Lens Manipulation Using Edge-Heaters in Laser Bars for Improved Efficiency and Divergence 热透镜操作使用边缘加热器的激光棒，以提高效率和发散

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-17 DOI: 10.1109/LPT.2025.3558758

Md. Jarez Miah;Anisuzzaman Boni;Dominik Martin;Arnim Ginolas;Mohamed Elattar;Pietro Della Casa;Stefan Grützner;Stephan Strohmaier;Andrea Knigge;Günther Tränkle;Paul Crump

{"title":"Thermal Lens Manipulation Using Edge-Heaters in Laser Bars for Improved Efficiency and Divergence","authors":"Md. Jarez Miah;Anisuzzaman Boni;Dominik Martin;Arnim Ginolas;Mohamed Elattar;Pietro Della Casa;Stefan Grützner;Stephan Strohmaier;Andrea Knigge;Günther Tränkle;Paul Crump","doi":"10.1109/LPT.2025.3558758","DOIUrl":"https://doi.org/10.1109/LPT.2025.3558758","url":null,"abstract":"We present here an approach to flattening the lateral thermal lens that develops in kW-class semiconductor laser bars consisting of multiple broad-area emitters and is responsible for limiting the power, conversion efficiency and beam quality of the bars. Simulation results show that by increasing heat at the edge-emitters of the bars, thermal lens can be diminished. With an experiment on single-emitters, we demonstrated that the required heat in the edge-emitters can be achieved by shortening their pump length. Following these studies, we fabricated 1-cm wide bars containing 37 emitters, each with a 186-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-wide stripe and a 4-mm-long resonator. In contrast to the baseline bars with equally and fully pumped emitters, the best-designed bars with an optimum (shorter) pump length only in the edge-emitters yield a 5%-points higher conversion efficiency, and an improved beam quality, narrowing the lateral beam divergence at 95% power content by over 10% at 0.8 kW power.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 9","pages":"545-548"},"PeriodicalIF":2.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143865241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Laser Swept-Frequency Feedback Interferometry for Three-Dimensional Displacement Measurement 三维位移测量的激光扫频反馈干涉法

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-15 DOI: 10.1109/LPT.2025.3560651

Ruiqian Sun;Qinyu Li;Jie Shan;Wei Xia;Dongmei Guo

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Broadband On-Chip Three Mode (De) Multiplexer Using SWG-Asymmetric Adiabatic Coupling 采用swg非对称绝热耦合的宽带片上三模（De）多路复用器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-03 DOI: 10.1109/LPT.2025.3556783

Rajarshi Guchhait;Shamsul Hassan;Devendra Chack;Gaurav Kumar

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Performance-Enhanced Digital Mobile Fronthaul Based on Long-Span Hollow-Core Anti-Resonant Fiber 基于大跨度空心抗谐振光纤的性能增强数字移动前传

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-01 DOI: 10.1109/LPT.2025.3556731

Hui Chen;Lei Zhang;Qibing Wang;Xu Zhang;Siyue Jin;Jie Luo;Lei Wang;Zhixue He

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Bandwidth Characteristics of a Graphene/Silicon Schottky-Junction Photodetector 石墨烯/硅肖特基结光电探测器的带宽特性

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-01 DOI: 10.1109/LPT.2025.3556025

Wangheng Pan;Zongwen Li;Anran Wang;Pengfei Zhao;Hu Chen;Zhixiang Zhang;Yi Shi;Yang Xu;Fengqiu Wang

{"title":"Bandwidth Characteristics of a Graphene/Silicon Schottky-Junction Photodetector","authors":"Wangheng Pan;Zongwen Li;Anran Wang;Pengfei Zhao;Hu Chen;Zhixiang Zhang;Yi Shi;Yang Xu;Fengqiu Wang","doi":"10.1109/LPT.2025.3556025","DOIUrl":"https://doi.org/10.1109/LPT.2025.3556025","url":null,"abstract":"Graphene/silicon (Gr/Si) heterostructure has emerged as a promising approach for high-performance broadband photodetectors. However, it is often the case that devices of similar structures exhibit bandwidths that differ by orders of magnitude. Moreover, the relatively large photosensitive area combined with multiple operation modes make it imperative to understand the in-plane bandwidth characteristics of such devices. Here, we conducted a thorough investigation of the in-plane bandwidth distribution and the focal-condition-dependent bandwidth characteristics in an exemplar Gr/Si Schottky-junction photodetector with a large lateral dimension (<inline-formula> <tex-math>$sim 640~mu $ </tex-math></inline-formula>m). It is found that the bandwidth as deduced by the 0.35/<inline-formula> <tex-math>$tau _{mathrm {FWHM}}$ </tex-math></inline-formula> method can better depict the high-frequency transient response of the device than the more conventional S21 bandwidth. Additionally, influence of illumination area and excitation power density on the response time has been characterized. Our study helps clarify two commonly used bandwidth figures of merit, and suggests that more analysis of the in-plane bandwidth characteristics may lead to updated design guidelines for photosensitive devices.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 8","pages":"485-488"},"PeriodicalIF":2.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143817837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-Power Near Flat-Top Distributed Ultraviolet 330 nm Laser for Photochemical Synthesis 用于光化学合成的大功率近平顶分布紫外330nm激光器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-04-01 DOI: 10.1109/LPT.2025.3556005

Qian Ti;Fei Yang;Huan Wang;Da-Fu Cui;Chuan Guo;Qi Bian;Chen Wang;Yong Bo;Qin-Jun Peng

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Optimized Quantum Random Number Generator for Single Photon LiDAR Interference Suppression 用于抑制单光子激光雷达干扰的优化量子随机数发生器

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-03-31 DOI: 10.1109/LPT.2025.3555856

Yicheng Wang;Xing Yang;Hao Pan;Yunhui Guo;Lei Zuo;Yuwei Chen

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In-Sensor Convolutional Computation Based on Retina-Inspired Infrared Photodetector Array 基于视网膜启发红外探测器阵列的传感器内卷积计算

IF 2.3 3区工程技术

IEEE Photonics Technology Letters Pub Date : 2025-03-31 DOI: 10.1109/LPT.2025.3555798

Hongyi Lin;Xinyu Ma;Xiaoyong Jiang;Xiangyang Shi;Minxia Xu;Yutong Li;Siyu Long;Yi Dong;Qing Li;Ting He;Fang Zhong;Ning Li;Wei Lu;Weida Hu;Jinshui Miao

{"title":"In-Sensor Convolutional Computation Based on Retina-Inspired Infrared Photodetector Array","authors":"Hongyi Lin;Xinyu Ma;Xiaoyong Jiang;Xiangyang Shi;Minxia Xu;Yutong Li;Siyu Long;Yi Dong;Qing Li;Ting He;Fang Zhong;Ning Li;Wei Lu;Weida Hu;Jinshui Miao","doi":"10.1109/LPT.2025.3555798","DOIUrl":"https://doi.org/10.1109/LPT.2025.3555798","url":null,"abstract":"In the field of infrared detection, as the resolution of detection wavelengths and spatial imaging improves, traditional architectures that separate sensing and processing struggle to meet the exponentially growing demands of machine vision. Inspired by the human visual system, which performs preprocessing on the retina to reduce the burden of information transmission, we propose an MSM (metal/semiconductor-InGaAs/metal) structure retina-inspired infrared photodetector. This detector allows the modulation of response polarity and amplitude by adjusting the bias voltage, enabling a range of preprocessing operations inside the detector. The Au/InGaAs/Au retinal-like detector exhibits tunable positive and negative photoresponses in the short-wave infrared region, with a response speed of up to 490 ns, facilitating ultra-fast image information preprocessing. We propose a <inline-formula> <tex-math>$16times 16$ </tex-math></inline-formula> in-sensor computing hardware system capable of deploying various convolution kernels directly inside the detector to perform convolution operations, offering a unique opportunity for lightweight convolutional neural network hardware.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 9","pages":"541-544"},"PeriodicalIF":2.3,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143865319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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