基于SnS2和SnS异质结构的高响应度宽带光电探测器

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-06-25 DOI:10.1109/LPT.2025.3583064

Akshay Yadav;Tulika Bajpai;Satyabrata Jit;Shweta Tripathi

{"title":"基于SnS2和SnS异质结构的高响应度宽带光电探测器","authors":"Akshay Yadav;Tulika Bajpai;Satyabrata Jit;Shweta Tripathi","doi":"10.1109/LPT.2025.3583064","DOIUrl":null,"url":null,"abstract":"This study reports the fabrication, and performance evaluation of an innovative Al/PEDOT: PSS/SnS/SnS2/FTO/Glass photodetector. Utilizing a layered architecture, the device incorporates Al as an electrode, PEDOT: PSS as a hole transport layer (HTL), SnS and SnS2 as the active layer, fabricated on FTO coated glass substrate. The photodetector demonstrates high external quantum efficiency across a broad spectral range of UV, visible and near-infrared (NIR) regions. The proposed device displays a high External Quantum Efficiency EQE (%)/Responsivity Rs(A/W) of <inline-formula> <tex-math>$1.98 \\times 10~^{4}$ </tex-math></inline-formula>%/56.14, <inline-formula> <tex-math>$7.61 \\times 10~^{4}$ </tex-math></inline-formula>%/307.15, <inline-formula> <tex-math>$7.74 \\times 10~^{3}$ </tex-math></inline-formula>% / 71.70 at 350 nm (UV), 500 nm (Visible) and 1150 nm (NIR) respectively, at −1Vbias.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 20","pages":"1149-1152"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SnS2 and SnS Heterostructure Based High Responsivity Broadband Photodetector\",\"authors\":\"Akshay Yadav;Tulika Bajpai;Satyabrata Jit;Shweta Tripathi\",\"doi\":\"10.1109/LPT.2025.3583064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study reports the fabrication, and performance evaluation of an innovative Al/PEDOT: PSS/SnS/SnS2/FTO/Glass photodetector. Utilizing a layered architecture, the device incorporates Al as an electrode, PEDOT: PSS as a hole transport layer (HTL), SnS and SnS2 as the active layer, fabricated on FTO coated glass substrate. The photodetector demonstrates high external quantum efficiency across a broad spectral range of UV, visible and near-infrared (NIR) regions. The proposed device displays a high External Quantum Efficiency EQE (%)/Responsivity Rs(A/W) of <inline-formula> <tex-math>$1.98 \\\\times 10~^{4}$ </tex-math></inline-formula>%/56.14, <inline-formula> <tex-math>$7.61 \\\\times 10~^{4}$ </tex-math></inline-formula>%/307.15, <inline-formula> <tex-math>$7.74 \\\\times 10~^{3}$ </tex-math></inline-formula>% / 71.70 at 350 nm (UV), 500 nm (Visible) and 1150 nm (NIR) respectively, at −1Vbias.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 20\",\"pages\":\"1149-1152\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11050407/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11050407/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了一种新型Al/PEDOT: PSS/SnS/SnS2/FTO/Glass光电探测器的制备和性能评价。该器件采用分层结构，将Al作为电极，PEDOT: PSS作为空穴传输层（HTL）， SnS和SnS2作为有源层，在FTO镀膜玻璃基板上制备。该光电探测器在紫外、可见光和近红外（NIR）区域的宽光谱范围内表现出高的外量子效率。该器件在- 1Vbias下，在350 nm （UV）、500 nm（可见光）和1150 nm （NIR）下，具有较高的外量子效率EQE(%)/响应度Rs（a /W）分别为1.98 \乘以10~^{4}$ %/56.14、7.61 \乘以10~^{4}$ %/307.15和7.74 \乘以10~^{3}$ %/ 71.70。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SnS2 and SnS Heterostructure Based High Responsivity Broadband Photodetector

This study reports the fabrication, and performance evaluation of an innovative Al/PEDOT: PSS/SnS/SnS2/FTO/Glass photodetector. Utilizing a layered architecture, the device incorporates Al as an electrode, PEDOT: PSS as a hole transport layer (HTL), SnS and SnS2 as the active layer, fabricated on FTO coated glass substrate. The photodetector demonstrates high external quantum efficiency across a broad spectral range of UV, visible and near-infrared (NIR) regions. The proposed device displays a high External Quantum Efficiency EQE (%)/Responsivity Rs(A/W) of

$1.98 \times 10~^{4}$

%/56.14,

$7.61 \times 10~^{4}$

%/307.15,

$7.74 \times 10~^{3}$

% / 71.70 at 350 nm (UV), 500 nm (Visible) and 1150 nm (NIR) respectively, at −1Vbias.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.