{"title":"Efficient and Stable Electroluminescent Devices From Sn/ErYb Silicate Co-Doped in Silica Film","authors":"Jingjie Zhao;Lixiang Wang;Yangyi Zhang;Teng Sun;Jun Xu;Kunji Chen","doi":"10.1109/LPT.2025.3584049","DOIUrl":null,"url":null,"abstract":"Sn and Er2Si2O7:Yb co-doped SiO2 (SiO2-Sn/ Er2Si2O7:Yb) thin films were successfully fabricated by using the sol-gel method. The Er-related near-infrared (NIR) luminescence performance was significantly enhanced by improving the quality of nanocrystals and introducing the energy transfer process of Yb. The designed electroluminescent device based on SiO2-Sn/Er2Si2O7:Yb film achieved visible and dual-wavelength NIR electroluminescence (EL). The Er-related NIR EL integrated intensity of the optimal device increased by more than 2 times compared to the Yb-free device. The optimal ErYb silicate electroluminescent devices also exhibited excellent performance in threshold voltage (~22 V), power efficiency (<inline-formula> <tex-math>$\\sim 2.6\\times 10 ^{-3}$ </tex-math></inline-formula>), and operational stability (>600 min), which is promising for the development of efficient and stable silicon-based NIR light sources.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 19","pages":"1117-1120"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11059234/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Sn and Er2Si2O7:Yb co-doped SiO2 (SiO2-Sn/ Er2Si2O7:Yb) thin films were successfully fabricated by using the sol-gel method. The Er-related near-infrared (NIR) luminescence performance was significantly enhanced by improving the quality of nanocrystals and introducing the energy transfer process of Yb. The designed electroluminescent device based on SiO2-Sn/Er2Si2O7:Yb film achieved visible and dual-wavelength NIR electroluminescence (EL). The Er-related NIR EL integrated intensity of the optimal device increased by more than 2 times compared to the Yb-free device. The optimal ErYb silicate electroluminescent devices also exhibited excellent performance in threshold voltage (~22 V), power efficiency ($\sim 2.6\times 10 ^{-3}$ ), and operational stability (>600 min), which is promising for the development of efficient and stable silicon-based NIR light sources.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.