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2022 International Symposium on Semiconductor Manufacturing (ISSM)最新文献

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Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation 正电子湮没研究阳离子空位对TiN/ZrO2/TiN电容器漏电流的影响
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027133
A. Uedono, Naomichi Takahashi, R. Hasunuma, Y. Harashima, Y. Shigeta, Z. Ni, H. Matsui, A. Notake, Atsushi Kubo, T. Moriya, K. Michishio, N. Oshima, S. Ishibashi
{"title":"Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation","authors":"A. Uedono, Naomichi Takahashi, R. Hasunuma, Y. Harashima, Y. Shigeta, Z. Ni, H. Matsui, A. Notake, Atsushi Kubo, T. Moriya, K. Michishio, N. Oshima, S. Ishibashi","doi":"10.1109/ISSM55802.2022.10027133","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027133","url":null,"abstract":"TiN/ZrO2/TiN capacitors were characterized using XRD, STEM, EDX, and monoenergetic positron beams. For an as-deposited ZrO2 layer, an interlayer was formed in the layer. After post-deposition annealing at 550°C, the width of the interlayer expanded. The major vacancy-type defects in the ZrO2 layer were determined to be a Zr-vacancy coupled with oxygen vacancies by the positron annihilation technique. After annealing, the size of these vacancies increased. The presence of the cation vacancies and their complexes in the ZrO2 layer suggests that not only oxygen vacancies but also such defects play a role in the defect formation of the ZrO2 layer and affect its electrical properties.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116717190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Status of EUV Lithography, What is the Stochastic Issues? EUV光刻技术的现状:随机问题是什么?
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026917
Toru Fujimori
{"title":"Recent Status of EUV Lithography, What is the Stochastic Issues?","authors":"Toru Fujimori","doi":"10.1109/ISSM55802.2022.10026917","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026917","url":null,"abstract":"The performance of EUV resist materials are still not enough for the expected HVM requirement, even by using the latest qualifying materials. One of the critical issues is the stochastic issues, which will be become defectivity, like nano-bridge or nano-pinching. The analyzing summary and the resulting classification the stochastic issues in lithography was described in this paper.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"57 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114035959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations 用第一性原理计算系统地寻找ZrO2和HfO2中的稳定掺杂剂
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027044
Y. Harashima, Hiroaki Koga, Z. Ni, Takehiro Yonehara, Michio Katouda, A. Notake, H. Matsui, T. Moriya, M. K. Si, R. Hasunuma, A. Uedono, Y. Shigeta
{"title":"Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations","authors":"Y. Harashima, Hiroaki Koga, Z. Ni, Takehiro Yonehara, Michio Katouda, A. Notake, H. Matsui, T. Moriya, M. K. Si, R. Hasunuma, A. Uedono, Y. Shigeta","doi":"10.1109/ISSM55802.2022.10027044","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027044","url":null,"abstract":"In this study, we performed systematic search for dopants to stabilize the tetragonal structure of HfO2 and ZrO2 by using first-principles calculations. Whole impurity configurations within the supercell, more than 12,000 systems, are examined and the most stable configurations are assumed to be realized. We reveal the contributions of the dopants to the structural stability of tetragonal phase, and that Si or Ge significantly stabilize the tetragonal phase.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131432226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-tuning Optimization to Compatible the Delivery and Low Energy Consumption 自调整优化，以兼容交付和低能耗
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027098
Chending Mao, Jia Lin, S. Arima
{"title":"Self-tuning Optimization to Compatible the Delivery and Low Energy Consumption","authors":"Chending Mao, Jia Lin, S. Arima","doi":"10.1109/ISSM55802.2022.10027098","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027098","url":null,"abstract":"This paper introduced n-step hybrid flow-shop scheduling (nHFS) with batch process to consider a trade-offs between power consumption and productivity. Wider optimization scope with power conscious have been advanced to increase efficiency of algorithm and tune the parameter automatically based on our past research. Concretely, Energy consumption and due date are considered in Self-tuning Optimization. Actual companies' data are used to evaluate the performance of proposed and past methods.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115176222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Message from ISSM 2022 Committee ISSM 2022委员会寄语
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/issm55802.2022.10027022
{"title":"Message from ISSM 2022 Committee","authors":"","doi":"10.1109/issm55802.2022.10027022","DOIUrl":"https://doi.org/10.1109/issm55802.2022.10027022","url":null,"abstract":"","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122615738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoimprint Lithography with CO2 Ambient 二氧化碳环境纳米压印光刻
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027095
Toshiki Ito, Yuto Ito, I. Kawata, Ken-ichi Ueyama, Kouhei Nagane, Weijun Liu, T. Stachowiak, Wei Zhang, Teresa Estrada
{"title":"Nanoimprint Lithography with CO2 Ambient","authors":"Toshiki Ito, Yuto Ito, I. Kawata, Ken-ichi Ueyama, Kouhei Nagane, Weijun Liu, T. Stachowiak, Wei Zhang, Teresa Estrada","doi":"10.1109/ISSM55802.2022.10027095","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027095","url":null,"abstract":"In Jet and Flash Imprint Lithography (JFIL), ambient gas is trapped between the resist, the substrate and the mold. The volume of the trapped ambient gas is estimated about 9.7 ~ 21.5% of the resist volume. It takes time for the bubbles to disappear in the closed space. In case that carbon dioxide ambient is applied in JFIL, it was theoretically and experimentally demonstrated that the trapped carbon dioxide gas dissolved rapidly into organic liquid or organic solid layer in imprint stack. The trapped carbon dioxide gas bubble disappeared more rapidly than that of helium gas, which resulted in higher throughput and fewer defect number.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121284025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ISSM 2022 Committee ISSM 2022委员会
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/issm55802.2022.10027014
{"title":"ISSM 2022 Committee","authors":"","doi":"10.1109/issm55802.2022.10027014","DOIUrl":"https://doi.org/10.1109/issm55802.2022.10027014","url":null,"abstract":"","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130793821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study on Robust Noninteracting Control System Design with Disturbance Feedforward for 6-DoF Active Vibration Isolation Platform 六自由度主动隔振平台扰动前馈鲁棒无交互控制系统设计研究
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026944
Thinh Huynh, Dong-Hun Lee, Young-Bok Kim
{"title":"A Study on Robust Noninteracting Control System Design with Disturbance Feedforward for 6-DoF Active Vibration Isolation Platform","authors":"Thinh Huynh, Dong-Hun Lee, Young-Bok Kim","doi":"10.1109/ISSM55802.2022.10026944","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026944","url":null,"abstract":"This paper proposes a novel noninteracting control strategy for a 6-degree-of-freedom (DoF) active vibration isolation system (AVIS) that carries high-precision machinery or measuring instruments. External vibrations need rejecting effectively, and at the same time, the internal interactions and parameter uncertainties are also worth consideration. For these objectives, the system model is first derived. Then, the proposed control law consists of state feedback, unity feedback from the output, and finally, feedforward from the measured floor motion. The feedback gains are formulated such that noninteracting performance is achieved in the sense that each DoF independently follows its corresponding reference. Moreover, robust stability is obtained from linear matrix inequality (LMI) techniques. Simulation studies have been conducted to validate the proposed control system.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126149275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Noise Reduction in SEM Images using Deep Learning 基于深度学习的SEM图像降噪
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026935
Yuki Sato, M. Kazui, Shinji Kobayashi
{"title":"Noise Reduction in SEM Images using Deep Learning","authors":"Yuki Sato, M. Kazui, Shinji Kobayashi","doi":"10.1109/ISSM55802.2022.10026935","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026935","url":null,"abstract":"Measurement of patterns formed on wafers is required for defect inspection in mass production and for pattern quality evaluation in research and development. Scanning electron microscope (SEM) images are used for pattern measurement. The number of SEM scans must be reduced because of the incidents such as reduced throughput and damage to the resist. However, frame average images from fewer SEM images are noisy, and the noise makes it difficult to measure the pattern. In our proposed method, a deep learning was trained to perform noise reduction to measure patterns from noisy SEM images. Denoised images using the proposed method were evaluated with a 256-frame average image as a pseudo-correction image. The evaluation was made with PSNR and SSIM image quality evaluation, and with RMSE and power spectral density (PSD) of edge positions estimated using the tool. The results of noise reduction of single-frame image with proposed method were PSNR 32dB, SSIM 0.91, and RMSE 0.43nm, and showed high image quality and high accuracy in edge position estimation. With proposed method, an unbiased PSD-like graph with no noise floor was obtained. In addition, there is no significant difference between PSD graphs using single-frame images and 16-frame average images. These results indicate that proposed method can effectively remove noise from a few-frame average images, and that the denoised images can be used for pattern measurement and roughness evaluation using PSD.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123328624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advanced Process Monitoring through Fault Detection and Classification for Robust Statistical Process Control of Tantalum Nitride Reactive Sputtering 基于故障检测和分类的氮化钽反应溅射高级过程监测
2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027148
Stephanie Y Chang, S. Tiku, L. Luu
{"title":"Advanced Process Monitoring through Fault Detection and Classification for Robust Statistical Process Control of Tantalum Nitride Reactive Sputtering","authors":"Stephanie Y Chang, S. Tiku, L. Luu","doi":"10.1109/ISSM55802.2022.10027148","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027148","url":null,"abstract":"This paper discusses Fault Detection and Classification (FDC) deployed in high-volume manufacturing for the Tantalum Nitride (TaN) reactive sputtering process. TaN thin film resistors (TFR) with an average sheet resistance (Rs) of 50 ohms/sq with high uniformity and negative temperature coefficient of resistance (TCR) were achieved. Optimizing interdiction capabilities for real-time prevention and detection of parameter excursions strengthened statistical process control (SPC) and improved yield.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130962612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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