2022 International Symposium on Semiconductor Manufacturing (ISSM)最新文献_第4页

Data-driven Modeling for Production Dynamics 生产动态的数据驱动建模

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026908

S. Arima, Yu Sasaki, Sho Morie, Yuto Kataoka, Chending Mao, Jia Lin

引用次数: 0

Secure and Reliable Power Monitoring for Low Consumption Factory Equipment via Programmable IoT Devices 通过可编程物联网设备对低功耗工厂设备进行安全可靠的电力监控

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026914

Sergio Garnica, R. Wieland

引用次数: 0

ISSM2022 Author Index ISSM2022作者索引

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/issm55802.2022.10027052

引用次数: 0

Experimentally Study on the Effect of RIE Etching Power on Etching Rate of $beta-text{Ga}_{2}mathrm{O}_{3}$ Thin Film RIE刻蚀功率对$beta-text{Ga}_{2} maththrm {O}_{3}$薄膜刻蚀速率影响的实验研究

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027071

Wang Xu, Ran Jing Yang, Yang Lai, Yang Fa Shun, M. Kui

{"title":"Experimentally Study on the Effect of RIE Etching Power on Etching Rate of $beta-text{Ga}_{2}mathrm{O}_{3}$ Thin Film","authors":"Wang Xu, Ran Jing Yang, Yang Lai, Yang Fa Shun, M. Kui","doi":"10.1109/ISSM55802.2022.10027071","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027071","url":null,"abstract":"As a member of ultra-wide band gap semiconductor materials, $beta-text{Ga}_{2}mathrm{O}_{3}$ materials have attracted wide attention from researchers in the semiconductor field in recent years. Etching process is crucial to realize semiconductor devices and integrated circuits based on $beta-text{Ga}_{2}mathrm{O}_{3}$ materials. Based on the reaction ion etching process commonly used in silicon-based semiconductor technology, the etching experiment research of $beta-text{Ga}_{2}mathrm{O}_{3}$ thin film is carried out. The $beta-text{Ga}_{2}mathrm{O}_{3}text{film}$ is etched with SF6, based on the induction coupled reaction ion etching. The effect of RIE etching power, excitation power and bias power, on etching rate of $beta-text{Ga}_{2}mathrm{O}_{3}$ thin film has been studied. SEM characterization results show that the etching rate is the highest at 600W excitation power. The etching rate increases with the increase of bias power. The etching rate at 200W bias power is slightly higher than that at 150W bias power. However, the photoresist used as the etch mask will be damaged at 200W bias power.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115449982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic AI Computation Tasks with SECS/GEM in Semiconductor Smart Manufacturing 半导体智能制造中基于SECS/GEM的动态AI计算任务

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027157

H. H. Nguyen

引用次数: 0

Automatic Classification of C-SAM Voids for Root Cause Identification of Bonding Yield Degradation 基于C-SAM空洞的键合成品率退化根本原因自动分类

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027076

J. Baderot, Solange Garrais, S. Martínez, J. Foucher, R. Eto, K. Tanida, Takatoshi Yasui, Tomoya Tanaka

引用次数: 1

Equipment Sensor Data Cleansing Algorithm Design for ML-Based Anomaly Detection 基于机器学习的异常检测设备传感器数据清洗算法设计

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027125

Yun-Che Hsieh, Chieh-Yu Chen, Da-Yin Liao, Peter B. Luh, Shi-Chung Chang

引用次数: 2

A Novel Approach to Dynamic Line Balance Control and Scheduling with a Digital Twin Production 数字双体生产动态生产线平衡控制与调度的新方法

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026922

H. Tsuchiyama, Holland M. Smith

引用次数: 0

Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer 高温N2退火对SiO2层中SiC和Si量子点光致发光的影响

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10026911

Kohki Murakawa, N. Mayama, T. Mizuno

引用次数: 0

Positive/Negative Decision Via Outlier Detection Towards Automatic Performance Evaluation for Defect Detector 基于离群点检测的正/负决策——面向缺陷检测器性能自动评估的研究

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI: 10.1109/ISSM55802.2022.10027074

Toshinori Yamauchi, Kentaro Ohira, Takefumi Kakinuma

{"title":"Positive/Negative Decision Via Outlier Detection Towards Automatic Performance Evaluation for Defect Detector","authors":"Toshinori Yamauchi, Kentaro Ohira, Takefumi Kakinuma","doi":"10.1109/ISSM55802.2022.10027074","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027074","url":null,"abstract":"In the field of semiconductor defect inspection, it has been possible to detect defects with high accuracy thanks to the object detection model (defect detector) composed of the deep learning model. The performance of the deep learning model depends highly on training data; therefore, during the operational phase at the customer site, we need to frequently evaluate the model's performance to deal with shifts of appearance for defects. However, frequently executing general evaluation methods is difficult at the customer site; hence, we need a method to automatically evaluate performance. In this study, for the purpose of automatically evaluating the performance of the defect detector, we propose the Positive/Negative Decision via Outlier Detection (PNDOD). PNDOD decides on positive/negative for detection results based on comparing features corresponding to the detected result with statistics computed from training data. By using this method, we can calculate the estimated precision from the ratio of the estimated number of positive detections to the number of total detections, and we can evaluate the model performance automatically based on this estimated precision. In experiments using SiC wafer images, we confirmed that PNDOD can decide on positive/negative with high accuracy, and we can precisely evaluate the model's performance.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125831978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1