Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer

Abstract

We experimentally studied the influence of high temperature N2 annealing on the photoluminescence (PL) of SiC and Si quantum-dots (QDs) in SiO2 layer fabricated by hot ion implantation technique. We demonstrated the increase of PL intensity of SiC- and Si-QDs after N2 annealing, compared with that after Ar annealing, which is probably attributable to the reduction of dangling bond density at SiO2/QD interface terminated by N atom trapping.