高温N2退火对SiO2层中SiC和Si量子点光致发光的影响

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI:10.1109/ISSM55802.2022.10026911

Kohki Murakawa, N. Mayama, T. Mizuno

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引用次数: 0

摘要

实验研究了高温N2退火对热离子注入法制备的SiO2层中SiC和Si量子点光致发光性能的影响。我们发现，与Ar退火相比，经过N2退火的SiC- QD和si -QD的PL强度增加，这可能是由于N原子捕获终止的SiO2/QD界面的悬垂键密度降低。

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Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer

We experimentally studied the influence of high temperature N2 annealing on the photoluminescence (PL) of SiC and Si quantum-dots (QDs) in SiO2 layer fabricated by hot ion implantation technique. We demonstrated the increase of PL intensity of SiC- and Si-QDs after N2 annealing, compared with that after Ar annealing, which is probably attributable to the reduction of dangling bond density at SiO2/QD interface terminated by N atom trapping.

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2022 International Symposium on Semiconductor Manufacturing (ISSM)

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