{"title":"基于故障检测和分类的氮化钽反应溅射高级过程监测","authors":"Stephanie Y Chang, S. Tiku, L. Luu","doi":"10.1109/ISSM55802.2022.10027148","DOIUrl":null,"url":null,"abstract":"This paper discusses Fault Detection and Classification (FDC) deployed in high-volume manufacturing for the Tantalum Nitride (TaN) reactive sputtering process. TaN thin film resistors (TFR) with an average sheet resistance (Rs) of 50 ohms/sq with high uniformity and negative temperature coefficient of resistance (TCR) were achieved. Optimizing interdiction capabilities for real-time prevention and detection of parameter excursions strengthened statistical process control (SPC) and improved yield.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advanced Process Monitoring through Fault Detection and Classification for Robust Statistical Process Control of Tantalum Nitride Reactive Sputtering\",\"authors\":\"Stephanie Y Chang, S. Tiku, L. Luu\",\"doi\":\"10.1109/ISSM55802.2022.10027148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses Fault Detection and Classification (FDC) deployed in high-volume manufacturing for the Tantalum Nitride (TaN) reactive sputtering process. TaN thin film resistors (TFR) with an average sheet resistance (Rs) of 50 ohms/sq with high uniformity and negative temperature coefficient of resistance (TCR) were achieved. Optimizing interdiction capabilities for real-time prevention and detection of parameter excursions strengthened statistical process control (SPC) and improved yield.\",\"PeriodicalId\":130513,\"journal\":{\"name\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM55802.2022.10027148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10027148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced Process Monitoring through Fault Detection and Classification for Robust Statistical Process Control of Tantalum Nitride Reactive Sputtering
This paper discusses Fault Detection and Classification (FDC) deployed in high-volume manufacturing for the Tantalum Nitride (TaN) reactive sputtering process. TaN thin film resistors (TFR) with an average sheet resistance (Rs) of 50 ohms/sq with high uniformity and negative temperature coefficient of resistance (TCR) were achieved. Optimizing interdiction capabilities for real-time prevention and detection of parameter excursions strengthened statistical process control (SPC) and improved yield.
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