二氧化碳环境纳米压印光刻

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI:10.1109/ISSM55802.2022.10027095

Toshiki Ito, Yuto Ito, I. Kawata, Ken-ichi Ueyama, Kouhei Nagane, Weijun Liu, T. Stachowiak, Wei Zhang, Teresa Estrada

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引用次数: 0

摘要

在喷射和闪蒸压印(JFIL)中，环境气体被困在抗蚀剂、基材和模具之间。圈闭环境气体的体积估计约为抗蚀剂体积的9.7 ~ 21.5%。气泡在封闭空间中消失需要时间。在JFIL中应用二氧化碳环境时，理论和实验证明了捕获的二氧化碳气体在压印堆中迅速溶解为有机液体或有机固体层。捕获的二氧化碳气泡比氦气气泡消失得更快，从而提高了产量，减少了缺陷数。

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Nanoimprint Lithography with CO2 Ambient

In Jet and Flash Imprint Lithography (JFIL), ambient gas is trapped between the resist, the substrate and the mold. The volume of the trapped ambient gas is estimated about 9.7 ~ 21.5% of the resist volume. It takes time for the bubbles to disappear in the closed space. In case that carbon dioxide ambient is applied in JFIL, it was theoretically and experimentally demonstrated that the trapped carbon dioxide gas dissolved rapidly into organic liquid or organic solid layer in imprint stack. The trapped carbon dioxide gas bubble disappeared more rapidly than that of helium gas, which resulted in higher throughput and fewer defect number.

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2022 International Symposium on Semiconductor Manufacturing (ISSM)

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