EUV光刻技术的现状:随机问题是什么?

Toru Fujimori
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引用次数: 0

摘要

即使使用最新的合格材料,抗EUV材料的性能仍然不足以满足预期的HVM要求。其中一个关键问题是随机问题,它将成为缺陷,如纳米桥或纳米捏。本文对光刻中的随机问题进行了分析总结和分类。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent Status of EUV Lithography, What is the Stochastic Issues?
The performance of EUV resist materials are still not enough for the expected HVM requirement, even by using the latest qualifying materials. One of the critical issues is the stochastic issues, which will be become defectivity, like nano-bridge or nano-pinching. The analyzing summary and the resulting classification the stochastic issues in lithography was described in this paper.
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