ECS Journal of Solid State Science and Technology最新文献

{"title":"Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist","authors":"Jose Lopez Ninantay, Anthony Engler, Jared Schwartz and Paul A. Kohl","doi":"10.1149/2162-8777/ad47d0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad47d0","url":null,"abstract":"The catalytic decomposition of poly(phthalaldehyde) with a photoacid generator can be used as dry-develop photoresist, where the exposed film depolymerizes into small molecules to allow the development of features via controlled vaporization. Higher temperatures enabled shorter dry-development times, but also promoted faster photoacid diffusion that compromised pattern fidelity. Trihexylamine was used as a base quencher to counteract acid diffusion in a phthalaldehyde-propanal co-polymer photoresist. The propanal co-monomer in the polymer improves the vaporization rate because it has a higher vapor pressure than phthalaldehyde. Addition of the base quencher was found to improve the contrast, pattern fidelity, and ease-of-handling of the dry-develop resist in a direct-write UV lithography tool. The dry-development of 4 μm features was achieved with no appreciable residue. For large area features, a spatially variable exposure method was used to direct the residue away from the exposed area. The gradient exposure method was used to produce 100 μm features. Plasma etching after dry-development was also used to achieve residue-free dry-developed patterns. These results show the benefits of incorporating base additives into a dry-develop depolymerizable resist system and highlight the need for addressing residue formation.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"67 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Proposal of Magnetic-Force-Assisted Polishing Method","authors":"Tatsuyuki Wada, Michio Uneda, Yuko Yamamoto, Tadakazu Miyashita and Ken-ichi Ishikawa","doi":"10.1149/2162-8777/ad4676","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4676","url":null,"abstract":"To reduce the size of the polisher, especially the polishing head, a novel method for applying the polishing load using magnetic force is proposed. As the fabrication of next-generation power device substrates advances, such as diamond, ultra-precise planarization via chemical mechanical polishing (CMP) becomes crucial for transforming these substrates into functional devices. Achieving CMP necessitates the application of an optimal polishing load to the substrate. Deadweight and air pressure methods are the traditional mechanisms for delivering this load. However, they tend to increase the size and complexity of the polishing head mechanism, hindering its miniaturization. This study proposes leveraging the magnetic force for the application of polishing load. Such an approach not only promises the miniaturization of the polishing head but also paves the way for smaller polishers. We constructed a prototype polisher with a straightforward mechanism and conducted several tests. The removal rate measurements from these tests, when compared with those of the traditional deadweight method in prior research, validated our approach. Additionally, by adjusting the magnet spacing (which adjusts magnetic force) and the rotational speed, we found that the removal rate adheres to Preston’s law even when employing the magnetic force for polishing.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"27 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stability, Thermophysical, Optical and Photothermal Properties of ZnO Nanofluids with Added Anionic/Cationic Mixed Surfactants","authors":"XuSheng Zhang, Bin Yang, Yue Shi, XiaoHui Yu and XiuQin Ma","doi":"10.1149/2162-8777/ad458f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458f","url":null,"abstract":"Metal oxide nanofluid is a new type of heat transfer medium with good thermal performance, which can be used to improve the heat collection and photothermal conversion performance of the collector. The development of new nanofluids with excellent stability, thermophysical and photothermal properties is very important for solar thermal utilization. In this paper, the ZnO nanofluids with SDS/CTAB mixed surfactants were prepared by two-step method. Their stability, thermophysical, optical and photothermal properties were studied based on experimental data. Then, the optimum concentration and preparation conditions of the proposed ZnO nanofluids adding SDS/CTAB with good photothermal performance were obtained. The results showed that the ZnO nanofluids with the addition of SDS/CTAB hybrid surfactant has good dispersion stability and its thermal conductivity can reach 0.772 W/(m·K). The transmittance was as low as 19.0.10% and the extinction coefficient was as high as 7.25 cm−1. In addition, the addition of the SDS/CTAB hybrid surfactant caused the ZnO nanofluids to exhibit better photothermal conversion efficiency up to 87%, which was superior to that of the control group with the addition of other surfactants. Therefore, ZnO nanofluids with the addition of SDS/CTAB have great potential as DASC working fluids. Highlights ZnO nanofluids with SDS/CTAB mixed surfactants were prepared. The thermal properties, stability, optical properties and photothermal properties of the prepared ZnO nanofluids were analyzed. The results show that the prepared nanofluids have great potential as the working medium of DASC.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"246 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions","authors":"Changxin Dong, Xinhuan Niu, Jianghao Liu, Ni Zhan, Yida Zou, Chao He, Xinjie Li, Fu Luo, Yunhui Shi and Jiabao Cheng","doi":"10.1149/2162-8777/ad4679","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4679","url":null,"abstract":"For Ruthenium (Ru)-based copper (Cu) interconnects Cu film chemical mechanical polishing (CMP), it is crucial to select appropriate pH regulators in the slurry to ensure the chemical reactions and maintain the stability of the polishing chemical environment. In this study, the effects of inorganic pH regulator KOH, organic pH regulator diethanolamine (DEA), and 2-amino-2-methyl-1-propanol (AMP) on CMP and slurry properties of Cu film were compared. It was found when using AMP as a pH regulator, the Cu/Ru removal rate selectivity (RRS) can reach 598:1, the surface roughness of Cu film decreased to 0.76 nm, and the slurry can remain stable for at least 7 d. The performance order of the three pH regulators is AMP＞KOH＞DEA. Meanwhile, through experimental results and test analysis, it has been confirmed that AMP can also play a multifunctional role as a complexing agent, dispersant, and surfactant. Therefore, AMP can replace KOH as a new pH regulator in weak alkaline slurries. This result plays an important role in guiding the selection of organic pH regulators in the optimization of Cu film CMP slurry. Highlights For Ruthenium-based copper interconnects copper film chemical mechanical polishing, it is crucial to select appropriate pH regulators in the slurry to ensure the chemical reactions and maintain the stability of the polishing chemical environment. In this paper, diethanolamine and 2-amino-2-methyl-1-propanol were selected as organic pH regulators for the properties of eco-friendly, stable, rapid reaction performance and the effects on copper film chemical mechanical polishing. 2-amino-2-methyl-1-propanol can also play a multifunctional role as a complexing agent, dispersant, and surfactant. When using AMP as a pH regulator, the copper/Ruthenium removal rate selectivity can reach 598:1, the surface roughness of copper film decreased to 0.76 nm, and the slurry can keep stability for at least 7 d. The application of multifunctional organic alkali in copper film chemical mechanical polishing will get more and more attention.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"43 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular Dynamics Simulations on Epoxy Resin Composite via Grafting Acryloyl-chloride to Inhibit Electron Transport and Improve Thermal-mechanical Properties","authors":"Shuang Cui Li, Guan Yu Liu, Juan Wang, Zhi Hai Liu and Lei Wang","doi":"10.1149/2162-8777/ad458b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458b","url":null,"abstract":"Electrical, thermal, and mechanical properties of cross-linked epoxy resin (EP) modified by the chemical grafting of acryloyl chloride (AC) were studied to explore the trapping mechanism of charge transport inhibition. The bound state traps deriving from grafted molecules were analyzed by first-principles calculations combined with electron transmission spectra to study the underlying mechanism of the electrical properties. In contrast to pure EP, the EP-graft-AC (EP-g-AC) represents significantly depressed conductivity due to the electron scattering from polar-groups of the grafted AC molecule. The substantial deep traps are generated in EP-g-AC molecules by the polar group of grafted AC and accordingly decrease charge mobility and raise the charge injection barrier, consequently suppressing space charge accumulation and charge carrier transport. EP-g-AC polymer acquires a significant amelioration in thermal and mechanical properties, as indicated by the higher cohesive energy density, glass transition temperature, and decomposition temperature in consistence with the lower thermal vibrations compared with pure EP polymer, except that the resulting higher fractional free volume is not preferable, which is attributed to the mixing incompatibility of the grafted AC molecules with EP molecular-chains.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"28 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Microstructural, and Electrical Properties Study of Pb(Sn0.45Ti0.55)O3 Ceramics","authors":"Bhakti Pada Das, Bhabani Sankar Patnaik, Tanmaya Jena, Sailabhama Nayak, Geetanjali Nayak, Krishnamayee Bhoi, Uttam Sahu, Prasanta Kumar Mahapatra, Ram Naresh Prasad Choudhary, Subrata Karmakar, Hari Sankar Mohanty","doi":"10.1149/2162-8777/ad458a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458a","url":null,"abstract":"We undertook a comprehensive investigation of the the structural, dielectric, and electrical characteristics of Pb(Sn_0.45Ti_0.55)O₃ ceramics prepared using the conventional solid-state route. A meticulous preparation protocol, involving solvating various precursors, was followed by extensive characterization employing X-ray diffraction, scanning electron microscopy, and dielectric studies. The synthesized sample features a single-phase tetragonal structure with P4mm symmetry. Using impedance spectroscopy, electrical transport properties of the polycrystalline Pb(Sn_0.45Ti_0.55)O₃(PST) ceramic were studied in detail. Relaxation and conduction mechanisms of the material were inferred using complex impedance, complex electric modulus, and frequency dependent ac conductivity analysis. Impedance spectroscopy results reveal the range of frequencies in which the grain, grain boundary, and electrode effects are dominant. Above certain temperatures, the imaginary component of impedance (Z^//) exhibits some resonant type peaks at different frequencies indicating relaxor nature of the sample. The activation energy obtained for both the relaxation and conduction process indicates the role of doubly-ionized oxygen vacancy in the conduction mechanism of the sample. The dielectric relaxation occurring at low frequency and high temperatures is related to the space charges associated with the ionized oxygen vacancies being trapped at the grain boundaries. The Cole-Cole plots confirm the poly-dispersive nature of dielectric relaxation in the sample.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"22 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Simulation of Dielectrically Modulated Dual Material Gate-Stack Double-Gate FinFET Biosensor","authors":"Asmita Pattnaik, S. K. Mohapatra, Ananya Dastidar, Om Prakash Acharya, Naglaa AbdelAll, Basma A El-Badry, Ghada A. Khouqeer, Abdullah N. Alodhayb","doi":"10.1149/2162-8777/ad458d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458d","url":null,"abstract":"This study developed and evaluated a dual-material gate stack double-gate FinFET-based biosensor (DM-GS-DG FinFET). The device was dielectrically modulated and investigated for molecules, such as streptavidin, gluten, zein, hen egg-white lysozyme, and acetylene tetrabromide, based on current, threshold voltage, subthreshold swing, and switching sensitivity. The influence of charged and neutral biomolecules within the nanocavity on the electric, analog, and radiofrequency parameters was recorded. This study was conducted relative to different dielectric <italic toggle=\"yes\">κ</italic>-values of 12 in terms of the percentage sensitivity improvement (SI%). The results reveal that the percentage of sensitivity I_ON improves effectively, especially for low <italic toggle=\"yes\">κ</italic>-values, compared with other sensitivity measures. All the sensitivity evaluations indicated that DM-GS-DG-FinFET combined with biomolecules is a viable option for biosensing purposes.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"200 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Cobalt-Doping on the Optical, Magnetic, and Electronic Features of Hexagonal Cadmium Sulfide","authors":"Zein K. Heiba, Ah Abd Ellatief, Mohamed Bakr Mohamed, A. M. El-naggar, Hassan Elshimy, Sameh I. Ahmed, Ismail A.M. Ibrahim","doi":"10.1149/2162-8777/ad458c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458c","url":null,"abstract":"CdS and Cd_0.9Co_0.1S samples were prepared under an N₂ atmosphere. The structural analysis was conducted using X-ray diffraction. The structural and microstructure parameters were determined using Rietveld refinement method. The incorporation of cobalt ions into CdS matrix was confirmed by energy-dispersive spectroscopy and Fourier-transform infrared analysis. CdS sample has a non-magnetic feature while the Co-doped sample exhibited a magnetic behavior. The origin of magnetic property transformation has been investigated, revealing the emergence of ferromagnetic ordering and the conversion to a diluted magnetic semiconductor (DMS) with a calculated magnetic moment of 2.56 <italic toggle=\"yes\">μ</italic>\u0000_B upon Co doping. We also investigated how this Cobalt-doping-driven transformation affected optical, photoluminescence, and electronic properties. These effects correlated with the emergence of hyper-deep defect states. Electronic properties were calculated using density functional theory (DFT) with the HSE06 hybrid functional approximation. The calculated energy bandgaps for both Co-doped and pure CdS were 2.13 and 2.12 eV, respectively, while experimental measurements from our UV analysis yielded values of 2.26 and 2.15 eV. DFT calculations were employed to explore the magnetic properties, absorption coefficients, refractive indices, real and imaginary dielectric components, and energy loss spectra in both samples.<inline-formula>\u0000<inline-graphic xlink:href=\"jssad458c-ga.jpg\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"218 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode","authors":"Yue Wei Mu, Hai Liang Dong, Zhi Gang Jia, Wei Jia, Jian Liang, Zhi Yong Wang, Bing She Xu","doi":"10.1149/2162-8777/ad441d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad441d","url":null,"abstract":"An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"29 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Cu-Sn-Sb Thin Film for Ultra-Speed and Phase High-Reliability Change Memory Applications","authors":"Haipeng You, Yixiao Chen, Yue Li, Yinglu Lv, Yin Yao, Jingjing Yang, Yu Xing, Jun Chen, Tianxiang Zhu and Zhengwen Wei","doi":"10.1149/2162-8777/ad3fe6","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3fe6","url":null,"abstract":"SnSb (SS), a vital phase-change thin film, has attracted attention due to its excellent phase-change properties, but the poor amorphous stability and crystalline speed of SS greatly limit its application in rapid phase-transition memories. Here, we propose a copper (Cu)-doped SS phase change films to achieve ultra-speed and high-reliability of SS. Resistance-temperature tests show Cu-Sn-Sb possesses ultra-low crystalline and amorphous resistivity, higher phase transition speed, and lower activation energy. X-ray diffraction measurements illustrate the introduction of Cu ions hinders the growth of grains and reduce grains size. Atomic force microscopy characterizes the surface morphology of as-deposited and annealed Cu-Sn-Sb films, and difference of root-mean-square roughness before and after annealing promote Cu-Sn-Sb film is more reliable to touch electrodes. In addition, the ultra-low resistivity and fast transition speed effectively reduce thermal loss in SET and RESET process. The results reveal that Cu-Sn-Sb is a promising material for ultra-rapid phase change and high-reliability storage applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"77 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}