ECS Journal of Solid State Science and Technology最新文献_第10页

Structural and Electrical Properties of Li Substituted Mg Nano Ferrites: Prepared by Citrate-gel Auto Combustion Method 锂取代镁纳米铁氧体的结构和电学特性：柠檬酸凝胶自动燃烧法制备

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-12 DOI: 10.1149/2162-8777/ad3982

Mallesh D., Pallati Naresh, Gangadhar Thalari, Aravind Seema

{"title":"Structural and Electrical Properties of Li Substituted Mg Nano Ferrites: Prepared by Citrate-gel Auto Combustion Method","authors":"Mallesh D., Pallati Naresh, Gangadhar Thalari, Aravind Seema","doi":"10.1149/2162-8777/ad3982","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3982","url":null,"abstract":"LixMg1−xFe2O4 where <inline-formula>\u0000<tex-math>\u0000<?CDATA ${x}=0.0,{to},0.5,{with},0.1$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mi mathvariant=\"italic\">x</mml:mi><mml:mo>=</mml:mo><mml:mn>0.0</mml:mn><mml:mspace width=\"0.5em\"></mml:mspace><mml:mi mathvariant=\"italic\">to</mml:mi><mml:mspace width=\"0.5em\"></mml:mspace><mml:mn>0.5</mml:mn><mml:mspace width=\"0.5em\"></mml:mspace><mml:mi mathvariant=\"italic\">with</mml:mi><mml:mspace width=\"0.5em\"></mml:mspace><mml:mn>0.1</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"jssad3982ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> nano ferrites were synthesized by citrate gel auto combustion. Using a field-emission scanning electron microscope (FE-SEM) and the X-ray diffraction technique, their structural and topographical studies were examined. The prepared nano ferrites’ single-phase cubic spinel along the Fd3m space group is confirmed by the structural investigation. The synthesized samples were found to have a crystalline size of 20–26 nm, as determined by the Debye–Scherrer formula. Lattice parameter variation observed for the samples indicates dopant atoms into a crystal lattice can also lead to changes in the lattice constant. FE-SEM images revealed the clear grain and grain boundaries with agglomerated structure and it varied between 33.6 nm-24.4 nm. Two bands observed in Fourier transform infrared spectroscopy illustrates the M-O band in tetrahedral and octahedral sites. Dielectric parameters of the sample observed by LCR meter. Single semicircle behavior observed in impedance spectra. Dielectric constant and dielectric loss decreased as increasing frequency explained by Koop’s theory of mechanism. AC conductivity increasing trend observed with frequency, mobility of charge carrier active at high frequency domain.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biogenic Zinc Oxide Nanoparticles: An Insight into the Advancements in Antimicrobial Resistance 生物纳米氧化锌：洞察抗菌剂耐药性的进展

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-10 DOI: 10.1149/2162-8777/ad397f

Avinash Sharma, Akash K., Swati Kumari, Kartik Chauhan, Abija James, Riya Goel, Jay Singh, Rupak Nagraik, Deepak Kumar

{"title":"Biogenic Zinc Oxide Nanoparticles: An Insight into the Advancements in Antimicrobial Resistance","authors":"Avinash Sharma, Akash K., Swati Kumari, Kartik Chauhan, Abija James, Riya Goel, Jay Singh, Rupak Nagraik, Deepak Kumar","doi":"10.1149/2162-8777/ad397f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad397f","url":null,"abstract":"Multidrug resistance (MDR) is a significant global challenge requiring strategic solutions to address bacterial infections. Recent advancements in nanotechnology, particularly in the synthesis of zinc oxide nanoparticles (ZnO NPs) using natural agents as stabilizers and reducing agents, have shown promising results in combating MDR. These nanoparticles possess strong antimicrobial properties against different strains of Gram-positive and Gram-negative, making them suitable for various industries, including food, pharmaceuticals, coatings, and medical devices. ZnO-NPs work by generating reactive oxygen species, releasing zinc ions (Zn2+), disrupting the bacterial cell membrane, interfering with metabolic processes and genetic material, and inducing oxidative stress and apoptosis. However, more research is needed to refine synthesis techniques, control size and morphology, and increase antibacterial efficacy. To fully understand their potential, interactions with proteins, DNA, and bacterial cell walls must also be examined. Investigating the synergistic potential of biogenic ZnO NPs with conventional antibacterial treatments could enhance therapeutic effectiveness while minimizing the risk of resistance emergence. Here we provide insight into the advancements in biogenic synthesis of nanoparticles using bio extracts and their applications in antimicrobial resistance as well as various factors affecting the synthesis process and characterization techniques for ZnO NPs. Recent studies on the antimicrobial activity of biogenic ZnO NPs against different pathogens and their mechanisms of action are discussed. Furthermore, potential applications of biogenic ZnO NPs as antimicrobial agents are highlighted.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"7 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140617613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid 蓝宝石 R 平面基底在硫酸和磷酸蚀刻液中的湿蚀刻结构分析

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-09 DOI: 10.1149/2162-8777/ad3980

Guorong Wu, Xiaokang Chen, Xuanrong Gu, Yiqiu Wu

{"title":"Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid","authors":"Guorong Wu, Xiaokang Chen, Xuanrong Gu, Yiqiu Wu","doi":"10.1149/2162-8777/ad3980","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3980","url":null,"abstract":"The occurrence and variation of wet-etched structures on R-plane substrates of sapphire were analyzed according to the distribution of drilling rates of typical crystal planes. First, the experiment for etching the sapphire hemisphere was conducted to obtain the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume). Then, the transfer matrix was applied to transform the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) into the distribution of etching rates with R-plane as the rotation center. The positive curvature maximum identification method was then applied to obtain the distribution of drilling rates of typical crystal planes on R-plane substrates. Finally, the occurrence and variation of polygonal grooves with different mask configurations on R-plane substrates in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) were analyzed based on the distribution of drilling rates of typical crystal planes. This provides a basis for the application and development of GaN-based light-emitting diode devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"20 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen 通过加入氢降低 Pt/GaN 肖特基势垒高度

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-09 DOI: 10.1149/2162-8777/ad3959

Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide

{"title":"Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen","authors":"Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide","doi":"10.1149/2162-8777/ad3959","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3959","url":null,"abstract":"Changes in the hydrogen-induced Schottky barrier height (<italic toggle=\"yes\">Φ</italic>\u0000B) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the <italic toggle=\"yes\">Φ</italic>\u0000B and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the <italic toggle=\"yes\">Φ</italic>\u0000B were reversible; specifically, the decrease in <italic toggle=\"yes\">Φ</italic>\u0000B upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the <italic toggle=\"yes\">Φ</italic>\u0000B of an as-loaded sample from 0.91 to 1.07 eV, revealing that the <italic toggle=\"yes\">Φ</italic>\u0000B of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques 评论-碳化硅薄膜技术：加工、性能和应用方面的最新进展：第二部分.PVD 和替代（非 PVD 和非 CVD）沉积技术

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-03 DOI: 10.1149/2162-8777/ad3672

Alain E. Kaloyeros, Barry Arkles

{"title":"Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques","authors":"Alain E. Kaloyeros, Barry Arkles","doi":"10.1149/2162-8777/ad3672","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3672","url":null,"abstract":"Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"90 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140580446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films CuAlSnS4 薄膜的结构、光学和光电特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-03-27 DOI: 10.1149/2162-8777/ad3366

I. M. El Radaf, H. Y. S. Al-Zahrani

{"title":"Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films","authors":"I. M. El Radaf, H. Y. S. Al-Zahrani","doi":"10.1149/2162-8777/ad3366","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3366","url":null,"abstract":"The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"72 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140316900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comment on “Dielectric, Optical, and Magnetic Behaviors of Magnesium Iron-Based Double Perovskite” [ ECS J. Solid State Sci. Technol. , 11, 113003 (2022)] 关于 "镁铁基双包光体的介电、光学和磁学行为 "的评论 [ ECS J. Solid State Sci.

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-03-26 DOI: 10.1149/2162-8777/ad2c32

Paweł E. Tomaszewski

引用次数: 0

Interaction Studies of PVP and CTAB Capped CuO Nanorods with Aldicarb and Chlorpyrifos PVP和CTAB封接的氧化铜纳米棒与涕灭威和毒死蜱的相互作用研究

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-03-19 DOI: 10.1149/2162-8777/ad2ed7

G. B. V. S. Lakshmi, Rahul K. Singh, Yashi Punia, Tarun K. Dhiman, Avinash K. Singh, Pratima R. Solanki

引用次数: 0

Development of Novel Conditioning Method Using Thermal Shape Memory Characteristics of Polyurethane CMP Pad 利用聚氨酯 CMP 衬垫的热形状记忆特性开发新型调节方法

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-03-15 DOI: 10.1149/2162-8777/ad2cfc

Jangwon Seo, Sanghuck Jeon, Jongwook Yoon, Joonho An, Yongsoo Choi, Hyunho Seok, Seunghwan Lee, Pengzhan Liu, Wookyung Jeon, Taesung Kim

{"title":"Development of Novel Conditioning Method Using Thermal Shape Memory Characteristics of Polyurethane CMP Pad","authors":"Jangwon Seo, Sanghuck Jeon, Jongwook Yoon, Joonho An, Yongsoo Choi, Hyunho Seok, Seunghwan Lee, Pengzhan Liu, Wookyung Jeon, Taesung Kim","doi":"10.1149/2162-8777/ad2cfc","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2cfc","url":null,"abstract":"Traditionally, the pad roughness has been maintained by wearing down the polyurethane pad with diamond disk. However, that method generates debris and reduces pad lifetime. This study propose a new approach to pad surface recovery by synthesizing a polyurethane-based raw material that exhibits shape memory behavior and can recover its shape upon heating. The findings suggest that the pad’s surface can be maintained by utilizing its shape memory trait and designing a system to heat the pad. The pad recovery tests were conducted using universal test machine (UTM) samples and found that, in terms of heat recovery, increasing the temperature had a greater effect than increasing the exposure time. CMP test was performed by using three conditioning potions: diamond disk conditioning, heat conditioning, and no conditioning. The results showed that pad asperity was recovered more efficiently with heat conditioning than with no conditioning (demonstrated by a 19% higher removal rate). The experimental results can be expected that combines diamond disk conditioning with heat conditioning could be a superior alternative for pad surface refreshment. Shape memory pads can return to their original form, leading to better chemical mechanical planarization (CMP) performance and an extended pad lifetime.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"34 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Argon Nanocluster Filled Between Twisted Bilayer Graphene: Molecular Dynamics Simulation 填充在双层扭曲石墨烯之间的氩纳米团簇：分子动力学模拟

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-03-15 DOI: 10.1149/2162-8777/ad2e1a

Shuwen Cui, Yulin Wu, Shuangshuang Hui, Qiang Li, Weiwei Liu

{"title":"Argon Nanocluster Filled Between Twisted Bilayer Graphene: Molecular Dynamics Simulation","authors":"Shuwen Cui, Yulin Wu, Shuangshuang Hui, Qiang Li, Weiwei Liu","doi":"10.1149/2162-8777/ad2e1a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2e1a","url":null,"abstract":"In 2004, graphene was discovered by Novoselov and Geim. With the development of technology，twisted bilayer graphene (tBLG) has become a hot research topic. On the basis of predecessors, we further study the confined spaces between twisted bilayer graphene. The interlayer spacing between them is expected to modify properties of atoms and molecules confined at the atomic interfaces. The effects of twist angle, interlayer spacing of the tBLG and temperature (20 K–70 K) on the equilibrium structure of argon cluster are systematically studied by means of molecular dynamics simulation with the tBLG being considered to be fixed. As the interlayer spacings of tBLGs with different twist angles increase at a fixed temperature 20 K, the equilibrium structures of the argon cluster transform from a monoatomic layer to multilayer structure. For different twist angles at the fixed interlayer spacing, the structures of the argon cluster gradually form periodic pattern (similar to moiré pattern). The effects of temperature and non-equiliblium suddenly heating process on the structures of argon clusters between tBLGs are also studied by molecular dynamics simulation. Our results may provide a theoretical support for the preparation of new carbon-based intercalated composites and the application of graphene.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"54 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140316974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0