Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques
IF 1.8 4区 材料科学Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
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引用次数: 0
Abstract
Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.