ECS Journal of Solid State Science and Technology最新文献

Au-free V/Al/Pt Contacts on n-Al0.85Ga0.15N:Si Surfaces of Far-UVC LEDs 远紫外 LED 的 n-Al0.85Ga0.15N:Si 表面上的无金 V/Al/Pt 触点

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-18 DOI: 10.1149/2162-8777/ad78ff

Hyun Kyong Cho, Ina Ostermay, Tim Kolbe, Jens Rass and Sven Einfeldt

引用次数: 0

Structural Characteristics and Dielectric Properties of Deposited Silver Nanoparticles with Polypyrrole on PET Films for Dielectric Devices 在 PET 薄膜上沉积银纳米粒子与聚吡咯的结构特征和介电性能，用于介电器件

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-17 DOI: 10.1149/2162-8777/ad78fe

A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif

{"title":"Structural Characteristics and Dielectric Properties of Deposited Silver Nanoparticles with Polypyrrole on PET Films for Dielectric Devices","authors":"A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif","doi":"10.1149/2162-8777/ad78fe","DOIUrl":"https://doi.org/10.1149/2162-8777/ad78fe","url":null,"abstract":"Herein, (PPy-Ag)/PET composites, consisting of silver nanoparticles (AgNPs) and polypyrrole (PPy) coated on PET, were fabricated by the polymerization process and then the films were characterized by SEM and XRD techniques. The addition of PPy-Ag on the dielectric properties of PET were determined. The XRD proved the successful synthesis of the (PPy-Ag)/PET samples. The SEM results demonstrate the effect of Ag modified the characteristics of the composite, which confirmed the interaction of (PPy-Ag)/PET. The dielectric properties of the films in frequency of 50 Hz to 5.6 MHz were measured. The density energy was enhanced from 9.1 × 10−5 for PET to 5480 × 10−5 J m−3 for (PPy-Ag)/PET. Moreover, the relaxation time decreased from 1.7 × 10−5 for PET to 2.8 × 109 sec for (PPy-Ag)/PET. The obtained data confirm the incorporation of PPy-Ag by PET. This research has led to the development of novel physico-chemical properties in flexible polymeric nanocomposite films, which could be used in high-performance energy storage devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors 通过非晶氧化铟钼薄膜晶体管中的量子阱结构实现低接触电阻

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-17 DOI: 10.1149/2162-8777/ad7901

Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo

{"title":"Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors","authors":"Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo","doi":"10.1149/2162-8777/ad7901","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7901","url":null,"abstract":"The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modification of Structural, Optical, and Electrical Properties of PVA/PVP Blend Filled by Nanostructured Titanium Dioxide for Optoelectronic Applications 用纳米结构二氧化钛填充 PVA/PVP 混合物，改变其结构、光学和电学特性，以实现光电应用

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-17 DOI: 10.1149/2162-8777/ad7902

Asma Alkabsh

{"title":"Modification of Structural, Optical, and Electrical Properties of PVA/PVP Blend Filled by Nanostructured Titanium Dioxide for Optoelectronic Applications","authors":"Asma Alkabsh","doi":"10.1149/2162-8777/ad7902","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7902","url":null,"abstract":"The PVA/PVP/TiO2 films were prepared using different TiO2 concentrations by solvent casting technique. An analysis was conducted to investigate the influence of TiO2 on the characteristics of PVA/PVP blends. The FTIR, UV/visible spectroscopy, and electrical bridge circuits were used to characterize the prepared nanocomposite films. The structural changes of the nanocomposite relative to pure PVA/PVP are indicated by FTIR spectra. The optical studies demonstrate that by increasing the TiO2 concentration inside PVA/PVP blends, the band gaps reduce from 5.40 eV for PVA/PVP to 4.20 eV for PVA/PVP/TiO2 (10 wt%), also the refractive indices the nanocomposites increase from 1.2020 for PVA/PVP blend into 2.5380 for PVA/PVP/TiO2 (10 wt%). Also, the transmittance decreased from 97.6% for PVA/PVP blend to approximately 55.4% at the largest concentration of TiO2. Additionally, studies were conducted on the parameters, as well, ac conductivity (σac). The outcomes of dielectric parameters of the prepared films are enhanced by the doping of TiO2 with different concentrations and dielectric relaxation is observed. The hopping mechanism of PVA/PVP/TiO2 films is supported by the ac conductivity. It is found that adding 10 wt% TiO2 inside PVA/PVP matrix at 5 MHz increases the conductivity of the pure PVA/PVP blend by 4.46 times. Highlights The impact of TiO2 nanoparticles on the PVA/PVP blend has been investigated. Optical and electrical properties have been significantly induced by TiO2 embedded on PVA/PVP. The optical parameters affirm that the TiO2 affect the optical response of PVA/PVP blend. The electrical parameters show amendments in AC electrical conductivity. The use of TiO2 in PVA/PVP is improving the optical and electrical properties of nanocomposites.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Analysis of 50 MeV Li3+ and 100 MeV O7+ Ion Beam Induced Electrical Modifications in Silicon Photodetectors 硅光电探测器中 50 MeV Li3+ 和 100 MeV O7+ 离子束诱导的电学改性对比分析

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-16 DOI: 10.1149/2162-8777/ad7759

Vinay Kumar Mariswamy, Krishnaveni Sannathammegowda, Santosh Kumar and Ashish Kumar

{"title":"Comparative Analysis of 50 MeV Li3+ and 100 MeV O7+ Ion Beam Induced Electrical Modifications in Silicon Photodetectors","authors":"Vinay Kumar Mariswamy, Krishnaveni Sannathammegowda, Santosh Kumar and Ashish Kumar","doi":"10.1149/2162-8777/ad7759","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7759","url":null,"abstract":"This article investigates the impact of 100 MeV O7+ and 50 MeV Li3+ ions on Silicon Photodetectors, focusing on their electrical characteristics with similar Sn/Se ratios. Elevated ion fluences led to a significant rise in the ideality factor “n”, indicating the presence of Generation-Recombination (G-R) current due to introduced defects, especially those with deep energy levels in the forbidden gap acting as G-R centers. While Ideality factor (n) values decreased for oxygen ions at maximum fluence, they increased for lithium ions, reflecting consistent patterns in series resistance (Rs) and reverse leakage current (IR), attributed to ion-induced defects. Oxygen ions showed a monotonic variation in Rs, whereas lithium ions exhibited a slight reduction at maximum fluence, possibly due to defect annihilation. Despite differing Se values, 50 MeV Li3+ ions demonstrated improved device characteristics, suggesting potential defect annihilation. The ratio of Sn to Se indicated comparable damage contributions from nuclear and electronic energy. Additionally, TRIM computations revealed non-uniform damage distributions, with ions penetrating deep into the substrate, away from the n+/p junction.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radiation Shielding Analysis of Multi-Component Glasses: Effects of Varying BaO, PbO2 and Gd2O3 Concentrations 多组分玻璃的辐射屏蔽分析：不同 BaO、PbO2 和 Gd2O3 浓度的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-15 DOI: 10.1149/2162-8777/ad775b

Maryam Al Huwayz, Aljawhara H. Almuqrin, F. F. Alharbi, M. I. Sayyed and B. Albarzan

引用次数: 0

Chitosan/Microcrystalline Cellulose Overlaid rGO/Fe3O4 Films: Broadband Dielectric Spectroscopy Investigations 壳聚糖/微晶纤维素叠层 rGO/Fe3O4 薄膜：宽带介电光谱研究

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-12 DOI: 10.1149/2162-8777/ad775c

Sawsan Dacrory, Samir Kamel, Naglaa Nasralla and Gamal Turky

{"title":"Chitosan/Microcrystalline Cellulose Overlaid rGO/Fe3O4 Films: Broadband Dielectric Spectroscopy Investigations","authors":"Sawsan Dacrory, Samir Kamel, Naglaa Nasralla and Gamal Turky","doi":"10.1149/2162-8777/ad775c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad775c","url":null,"abstract":"Hybrid and straightforward inorganic/organic composites that can be used simultaneously for energy storage are reported. Films from chitosan (Cs) with microcrystalline cellulose (MCC) implanted with reduced graphene oxide (rGO) and/or magnetic Fe3O4 nanoparticles were fabricated. The reinforcement of the Cs/MCC films with rGO and /or Fe3O4 was studied through Fourier transform infrared spectroscopy, X-ray diffraction, thermogravimetric analysis, and scanning electron microscopy with energy dispersive electron spectroscopy. In addition, their magnetic, conductivity, dielectric constant, and dielectric loss behaviors were studied. The magnetic investigations of the two films loaded with Fe3O4 have supper paramagnetic behavior. The saturation magnetization was decreased with the presence of rGO. At lower frequencies, the contribution of charge transport and interfacial polarization causes a sudden and nearly linear increase in permittivity with decreasing frequency. Unfortunately, no indication of electrode polarization was found, which reduces the ability of the prepared composition to store electrical energy. The electric modulus representation was employed to determine the relaxation time of the interfacial polarization quantitatively and numerically. No indication of electrode polarization was found.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural and Magnetic Properties of Nano Manganite La0.6Sr0.4MnO3 Obtained by Mechanochemical Synthesis Influenced by Preparation Conditions 机械化学合成法获得的纳米锰矿 La0.6Sr0.4MnO3 的结构和磁性受制备条件的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-12 DOI: 10.1149/2162-8777/ad775a

Peter N. G. Ibrahim, Ahmed E. Hannora and Farid F. Hanna

{"title":"Structural and Magnetic Properties of Nano Manganite La0.6Sr0.4MnO3 Obtained by Mechanochemical Synthesis Influenced by Preparation Conditions","authors":"Peter N. G. Ibrahim, Ahmed E. Hannora and Farid F. Hanna","doi":"10.1149/2162-8777/ad775a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad775a","url":null,"abstract":"Single phase La0.6Sr0.4MnO3 nanoparticles with perovskite structure ( symmetry) were successfully prepared by ball milling (mechanochemical synthesis) for 1 and 10 h followed by annealing treatment at temperature 900 or 1100 °C. It was found that, the lattice parameters increase with the increase of milling time or annealing temperature. The increase of the annealing temperature results in the increase of crystallite size and the particle size. The obtained samples were found to be ferromagnetic at room temperature. The sample obtained by one hour of milling and 900 °C annealing showed high value of saturation magnetization (about 56 emu g−1) and small value of coercivity (about 31 Oe) at room temperature, while the other samples show reduced value of magnetization and higher value of coercivity. The obtained magnetic results are discussed in light of the core/shell model of nanoparticles. The effect of the presence of oxygen vacancies on the lattice parameters and magnetic properties of the obtained samples is also discussed. Highlights Single phase perovskite La0.6Sr0.4MnO3 was obtained by mechanochemical synthesis. The influence of milling time and annealing temperature on the structural and magnetic properties was studied. The lattice parameters increase with the increase of milling time or annealing temperature The crystallite size and the particle size increase with the increase of annealing temperature. All samples showed ferromagnetic behavior at room temperature. Most of the samples show reduced value of magnetization. The magnetic results were discussed by the core/shell model of nanoparticles. The formation of oxygen vacancies can affect the magnetic results.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review—Research Progress of Novel Fluorescent Probes with the Structure of Xanthene as Parent Nucleus 综述-以呫吨结构为母核的新型荧光探针的研究进展

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-09 DOI: 10.1149/2162-8777/ad71ef

Chunlong Sun, Wen Du, Wang Li, Bin Dong, Baogui Wang, Yanjun Lin, Wenwen Huang, Fangliang Xia and Jun Pan

引用次数: 0

Towards ZnO-Based Near-Infra-Red Radiation Detectors: Performance Improvement via Si Nanoclusters Embedment 基于氧化锌的近红外辐射探测器：通过嵌入硅纳米团簇提高性能

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-05 DOI: 10.1149/2162-8777/ad7403

Victor-Tapio Rangel-Kuoppa, Dante Rodrigo Alfaro-Flores, Angel Guillen-Cervantes, Francisco de Moure-Flores, Miguel Ángel Meléndez-Lira

{"title":"Towards ZnO-Based Near-Infra-Red Radiation Detectors: Performance Improvement via Si Nanoclusters Embedment","authors":"Victor-Tapio Rangel-Kuoppa, Dante Rodrigo Alfaro-Flores, Angel Guillen-Cervantes, Francisco de Moure-Flores, Miguel Ángel Meléndez-Lira","doi":"10.1149/2162-8777/ad7403","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7403","url":null,"abstract":"Si nanoparticles embedded in a ZnO matrix were produced by a sequential deposition of ZnO/Si/ZnO layers, by radio frequency sputtering. Sample growth temperatures of 25 °C, 300 °C, and 500 °C were used to deposit ZnO/Si/ZnO layers on soda lime glass and p-type silicon substrates; ZnO layers were deposited by reactive radio-frequency sputtering employing a mixture of Ar/O<sub>2,</sub> with a ratio of 66/33, as working atmosphere. The type of substrate and the growth temperature affect the first ZnO layer roughness, promoting the formation of silicon nanoparticles, matrix characteristics, and as consequence, spectral response. The roughness of the initial ZnO layer is transferred to the top layer of ZnO, and it can be tailored between 65 and 370 Å, depending on the sample growth temperature. Transmission electron microscopy show that substrate temperature mainly affects the density of silicon nanoparticles rather than their size. ZnO/Si/ZnO films deposited on p-type silicon substrate were processed and photosensors were obtained, showing a selective response in the 950 to 1150 nm wavelength range, making them suitable candidates for near infrared detectors.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0