ECS Journal of Solid State Science and Technology最新文献

Study on the Synergistic Removal of Metal Ions by 18-Crown-6 and Diethylenetriaminepentaacetic Acid in Barrier Layer Chemical Mechanical Polishing 阻挡层化学机械抛光中18-冠-6与二乙烯三胺五乙酸协同去除金属离子的研究

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-12-01 DOI: 10.1149/2162-8777/ae2d97

Anjian Liu, Yuling Liu, Chong Luo, Chenwei Wang, Lijun Dong, Ziming Zhu, J.Q. E C. Qiang

{"title":"Study on the Synergistic Removal of Metal Ions by 18-Crown-6 and Diethylenetriaminepentaacetic Acid in Barrier Layer Chemical Mechanical Polishing","authors":"Anjian Liu, Yuling Liu, Chong Luo, Chenwei Wang, Lijun Dong, Ziming Zhu, J.Q. E C. Qiang","doi":"10.1149/2162-8777/ae2d97","DOIUrl":"https://doi.org/10.1149/2162-8777/ae2d97","url":null,"abstract":"Metal ions can cause contamination on wiring layer materials and barrier layer materials, thereby posing a threat to the electrical performance of chips. This contamination presents a significant challenge in post-chemical mechanical polishing cleaning. To address this issue, this study investigates the effects of two different metal ion chelating agents 18-crown-6 (18C6) and diethylenetriaminepentaacetic acid (DTPA) in combination with PVA brushes on the removal of metal ions from patterned wafers and the reduction of the surface leakage current. A variety of characterization techniques, including leakage current measurement, ICP-MS, electrochemical analysis, UV–vis-NIR, Fourier-transform infrared spectroscopy, and quantum chemical calculations, were employed to analyze the mechanisms of metal ion chelation by the two agents. The results show that the selective removal of different metal ions by the two chelating agents. When the DTPA concentration is 0.2 wt% and the 18C6 concentration is 0.15 wt%, the combined application reduces the leakage current on the sample surface to 127.9 pA without causing excessive corrosion, when the surface metal ion content is reduced to the ppb level.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 12","pages":"124004-124004"},"PeriodicalIF":0.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147882323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Optoelectronic Performance via Electrical Coupling in Eco-Friendly Ag ₂ S Colloidal Quantum Dots 生态友好型银2s胶体量子点的电耦合增强光电性能

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-11-01 DOI: 10.1149/2162-8777/ae1fe2

Lei Yan, Hong-Ge Cao, J. X. Chen, S.-M. Ji, Longyan Gu, Zhi-Qiang Gao, Ping Peng, Yuan Lin

{"title":"Enhanced Optoelectronic Performance via Electrical Coupling in Eco-Friendly Ag 2 S Colloidal Quantum Dots","authors":"Lei Yan, Hong-Ge Cao, J. X. Chen, S.-M. Ji, Longyan Gu, Zhi-Qiang Gao, Ping Peng, Yuan Lin","doi":"10.1149/2162-8777/ae1fe2","DOIUrl":"https://doi.org/10.1149/2162-8777/ae1fe2","url":null,"abstract":"Environmentally friendly silver sulfide (Ag 2 S) colloidal quantum dots (CQDs) represent a promising platform for low-cost, solution-processable optoelectronic devices, a prospect that is highly advantageous for sustainable societal development. Despite this potential, the performance of Ag 2 S CQD-based devices has been hindered by the poor transport of photogenerated charge carriers within the quantum dot solid films. To address this limitation, we developed a strategy to enhance inter-dot electronic coupling by treating bismuth-doped Ag 2 S CQD films with small molecules featuring sulfhydryl ligands. This treatment significantly improved both the generation and transport of photogenerated carriers. From a screening of various molecules, we found that treatment with 1, 2-ethanedithiol (EDT) yielded the most superior optoelectronic properties. Consequently, a solar cell fabricated from the EDT-treated film achieved a power conversion efficiency (PCE) of 2.71% under standard test conditions, an approximately 90% improvement over its untreated counterpart. This work not only provides a practical and effective strategy for enhancing Ag 2 S CQD-based devices but also offers valuable insights into advancing their applications in broader optoelectronics.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 11","pages":"114005-114005"},"PeriodicalIF":0.0,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147891113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects. 高频片对片互连的铜-环氧界面工程。

IF 2.4 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-11-01 Epub Date: 2025-11-04 DOI: 10.1149/2162-8777/ae170a

Junghyun Park, Ignace Agbadan, Monsuru Dauda, Mustapha Bello, John Hendershot, Soundarzo Tasnim, Omotolani Oduyebo, Sunggook Park, Anthony Engler, Jaimal Williamson, Varughese Mathew, Cigdem Atalay-Oral, John Flake

{"title":"Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects.","authors":"Junghyun Park, Ignace Agbadan, Monsuru Dauda, Mustapha Bello, John Hendershot, Soundarzo Tasnim, Omotolani Oduyebo, Sunggook Park, Anthony Engler, Jaimal Williamson, Varughese Mathew, Cigdem Atalay-Oral, John Flake","doi":"10.1149/2162-8777/ae170a","DOIUrl":"10.1149/2162-8777/ae170a","url":null,"abstract":"The reliability of high-frequency chip-to-chip (C2C) interconnects requires the durability of Cu interconnects and polymer dielectric interfaces. In this study, we examine the temperature cycling performance of Cu-epoxy interfaces, including methylimidazole and amine functional silane adhesion promoters along with electroplated or electroless metal interlayers such as Ni, NiCo0.64P0.25, NiW0.48P0.10, and CoW0.66P0.17. X-ray photoelectron spectroscopy is used to determine chemical states and compositions. O diffusion is analyzed using energy-dispersive X-ray spectroscopy. The adhesion strength was measured using a peel tester, and sheet resistance was characterized using a four-point probe before and after temperature cycle tests. Insertion losses were measured using a vector network analyzer as a function of temperature cycling. Our results indicate that organic adhesion promoters such as silanes show improvements in the initial adhesion; however, extended temperature cycling results in weakened interfaces associated with Cu oxidation. The CoW0.66P0.17 metallic interlayer is more durable and exhibits a minimal 0.02 dB mm-1 change in insertion losses at 18 GHz after 1500 cycles.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 11","pages":"111004"},"PeriodicalIF":2.4,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13193054/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148013684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep-Trap Engineering with h-BN Nanofiller for Simultaneous Suppression of Space Charge and Electron Avalanche in Anhydride-Cured Epoxy h-BN纳米填料的深阱工程同时抑制酸酐固化环氧树脂中的空间电荷和电子雪崩

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-10-24 DOI: 10.1149/2162-8777/ae175d

Zhongyuan Li, Heqian Liu, Yanfang Zhou

{"title":"Deep-Trap Engineering with h-BN Nanofiller for Simultaneous Suppression of Space Charge and Electron Avalanche in Anhydride-Cured Epoxy","authors":"Zhongyuan Li, Heqian Liu, Yanfang Zhou","doi":"10.1149/2162-8777/ae175d","DOIUrl":"https://doi.org/10.1149/2162-8777/ae175d","url":null,"abstract":"Hexagonal boron nitride nanoparticles (nano- h -BN) were employed as composite fillers in an anhydride-cured epoxy resin (EP) matrix to fabricate nano- h -BN/EP composites with filler contents ranging from 1.0 wt% to 5.0 wt% via mechanical blending and melt curing methods, investigating the improvements in electrical conductivity, DC breakdown strength, and space charge accumulation of the EP insulation material by nano- h -BN filler. Combining first-principles calculations and thermally stimulated current analysis, the research elucidated the charge trapping mechanism by which nano- h -BN enhances electrical insulation performances in the nano- h -BN/EP composites. XRD and SEM microstructural characterizations revealed distinct composite interfaces and good dispersion of nano- h -BN fillers within the EP matrix. Relative to neat EP, the nano- h -BN/EP composites cure at lower temperatures yet deliver evident improvements in glass-transition temperature with negligible penalty in toughness. The composite of nano- h -BN significantly reduces the electrical conductivity of EP, increasing the critical field strength and DC dielectric breakdown strength, with higher filler contents yielding more pronounced effects. Compared to neat EP, the space charge accumulation in 5.0 wt% nano- h -BN/EP composites is evidently suppressed. The findings demonstrate nano- h -BN introduces high-density deep charge traps in EP matrix, inhibiting charge transport, space charge accumulation and electron avalanche for efficiently enhancing electrical insulation performances of anhydride EP material.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 11","pages":"111001-111001"},"PeriodicalIF":0.0,"publicationDate":"2025-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147881303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication and Piezoelectric Output Characterization of MXene-Modified Poly(vinylidene fluoride-co-trifluoroethylene) Composite Films mxene改性聚偏氟乙烯-共三氟乙烯复合薄膜的制备及压电输出特性

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-09-01 DOI: 10.1149/2162-8777/ae049d

Jiahao Huang, Jun Luo, Yuanyu Wang

{"title":"Fabrication and Piezoelectric Output Characterization of MXene-Modified Poly(vinylidene fluoride-co-trifluoroethylene) Composite Films","authors":"Jiahao Huang, Jun Luo, Yuanyu Wang","doi":"10.1149/2162-8777/ae049d","DOIUrl":"https://doi.org/10.1149/2162-8777/ae049d","url":null,"abstract":"Flexible piezoelectric nanogenerators (PENGs) have garnered significant interest for their high sensitivity in harvesting mechanical energy into electrical power, particularly as self-powered sensors for human motion monitoring. In this work, MXene-doped poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)]-based piezoelectric nanofiber composite films were fabricated via electrospinning. Upon identifying the optimal MXene doping ratio of 4 wt%, a layered architecture was engineered through a uniaxial intermittent alternating dual-spray method. The composite film with 3–5 wt% MXene exhibited exceptional piezoelectric performance, achieving an output voltage of 11.91 V, representing a 259% enhancement over pristine P(VDF-TrFE)) and a current density of 0.98 μA. The peak instantaneous power output reached 11.67 μW, corresponding to a power density of 3.89 μW cm −2 . Remarkably, the output stability was maintained over 1,000 mechanical cycles, demonstrating robust mechanical durability. The fabricated flexible sensor successfully monitored human joint movements and illuminated micro-LEDs, highlighting its potential for wearable electronics and energy harvesting applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 9","pages":"097005-097005"},"PeriodicalIF":0.0,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147902741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Triple Synergistic Effect of Sodium Dodecyl Benzene Sulfonate and H₂O₂ on the Chemical Mechanical Polishing Performance of Ge 十二烷基苯磺酸钠和H2O2对Ge化学机械抛光性能的三重协同效应

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-06-01 DOI: 10.1149/2162-8777/ade4fe

Wanli Shi, Chong Luo, Yuhang Qi, Jianwei Zhou

{"title":"Triple Synergistic Effect of Sodium Dodecyl Benzene Sulfonate and H2O2 on the Chemical Mechanical Polishing Performance of Ge","authors":"Wanli Shi, Chong Luo, Yuhang Qi, Jianwei Zhou","doi":"10.1149/2162-8777/ade4fe","DOIUrl":"https://doi.org/10.1149/2162-8777/ade4fe","url":null,"abstract":"Germanium (Ge) has emerged as a promising alternative to silicon for channel materials in future metal‒oxide‒semiconductor field-effect transistors. In advanced integrated circuit manufacturing, a smooth, defect-free Ge surface is crucial for device performance, and a high removal rate (RR) is essential for efficient production. Here, the effects of sodium dodecyl benzene sulfonate (SDBS) on the performance of Ge chemical mechanical polishing (CMP) were investigated. Ge RR significantly increased from 149 to 781 nm min −1 with the addition of SDBS, representing an increase of over 424%, and its excellent surface morphology (Sq: 1.04 nm) was maintained. This improvement was attributed to the synergistic effects of SDBS and H 2 O 2 , as follows: SDB − provides adsorption and lubricating effects, reducing mechanical damage to the Ge surface caused by the SiO 2 abrasive, Na + acts as a catalytic enhancer, promoting the oxidation of Ge, and Na + and SDB − form a double electric layer with the negatively charged Ge surface, promoting charge transfer and thereby altering the internal structure of the oxide to make it susceptible to hydrolysis.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 6","pages":"064007-064007"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147903328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Nano-MnO₂ Abrasive in Chemical Mechanical Polishing of Tungsten for Integrated Circuits 纳米mno2磨料在集成电路用钨化学机械抛光中的作用

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-06-01 DOI: 10.1149/2162-8777/ade342

Yueqi Zhao, Shengli Wang, Chong Luo, Mengya Zhu, Jianwei Zhou

{"title":"Effect of Nano-MnO2 Abrasive in Chemical Mechanical Polishing of Tungsten for Integrated Circuits","authors":"Yueqi Zhao, Shengli Wang, Chong Luo, Mengya Zhu, Jianwei Zhou","doi":"10.1149/2162-8777/ade342","DOIUrl":"https://doi.org/10.1149/2162-8777/ade342","url":null,"abstract":"At present, it is difficult for the common abrasives used in the chemical mechanical polishing (CMP) of tungsten (W) in integrated circuits to simultaneously achieve a higher W removal rate and excellent surface quality. The effect of nano-manganese dioxide (MnO 2 ) in W CMP was proposed as an abrasive, an oxidizing agent, and a catalyst for Fenton-like reaction simultaneously through the chemical-mechanical synergism of MnO 2 . The possibility of the redox between MnO 2 and W was verified by X-ray photoelectron spectroscopy, electrochemical and thermodynamic calculations. The density functional theory calculations indicated that the theoretical oxidation ability of MnO 2 as an oxidant for W exceeded that of hydrogen peroxide (H 2 O 2 ) and hydroxyl radical (·OH). The generation of the Fenton-like reaction was deduced, which further enhanced the oxidation ability of the W slurry. CMP experiments demonstrated that the W removal rate (4753 Å min −1 ) of the slurry with 0.8 wt% MnO 2 abrasive was 2.75 times than that with common silica abrasive under the same concentration. The surface roughness (0.866 nm) was decreased by 37.7% compared with silica abrasive. The theoretical insights served as a foundation for the deliberate selection of abrasives within W slurry applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 6","pages":"064008-064008"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147904076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulated Preparation of ZnO@ZIF-8 Core-Shell Nanorods and Research on Their Gas-Sensitive Characteristics ZnO@ZIF-8核壳纳米棒的调制制备及其气敏特性研究

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-05-01 DOI: 10.1149/2162-8777/add498

Ye Weili, Jianing Wang, Jin Li

{"title":"Modulated Preparation of ZnO@ZIF-8 Core-Shell Nanorods and Research on Their Gas-Sensitive Characteristics","authors":"Ye Weili, Jianing Wang, Jin Li","doi":"10.1149/2162-8777/add498","DOIUrl":"https://doi.org/10.1149/2162-8777/add498","url":null,"abstract":"Ammonia (NH 3 ) is a commonly encountered yet potentially dangerous gas. Therefore, fabricating a sensor that exhibits a favorable response to ammonia gas at room temperature (RT, ∼25 °C) holds substantial practical significance. Here, the gas-sensitive response of ZnO to 1000 ppm NH 3 was adjusted by modifying the ratios of the surfactant CTAB. Notably, ZnO responded best to NH 3 when 50% CTAB was added (436). Based on this, we fabricated core–shell ZnO@ZIF-8 sensitive materials with selective response to NH 3 by hydrothermally etching a certain amount of ZnO on the ZnO surface with 2-methylimidazole. The response value of ZnO@ZIF-8 to 1000 ppm NH 3 gas (1485) was significantly higher than that of pure ZnO (436), with a threefold enhancement in the response value. Additionally, due to the contribution of the hydrophobic group (−CH 3 ) in ZIF-8 to the hydrophobicity of the composite material, the average response value of ZnO@ZIF-8 was merely 6 at 96% humidity, which can effectively mitigate the interference of water molecules in the natural environment during gas detection. This work offers novel methods for the advancement of ZIF-8 materials within the domain of gas sensing.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 5","pages":"057003-057003"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147917858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effective Improvement of Chemical Mechanical Polishing for Silicon Wafers Using Nitrogen-Containing Heterocyclic Compounds Slurry 含氮杂环化合物浆料对硅片化学机械抛光的有效改进

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-04-01 DOI: 10.1149/2162-8777/adcc53

Hai-Tao Wu, Zefang Zhang, Jiuwei Bai, Tianhang Yang, Yufei Zhang, Tong Liu, Gong Lv, Kaiyue Wang

{"title":"Effective Improvement of Chemical Mechanical Polishing for Silicon Wafers Using Nitrogen-Containing Heterocyclic Compounds Slurry","authors":"Hai-Tao Wu, Zefang Zhang, Jiuwei Bai, Tianhang Yang, Yufei Zhang, Tong Liu, Gong Lv, Kaiyue Wang","doi":"10.1149/2162-8777/adcc53","DOIUrl":"https://doi.org/10.1149/2162-8777/adcc53","url":null,"abstract":"Silicon wafers are widely used in system on chip (SoC) manufacturing, and accelerating the material removal rate (MRR) of silicon wafers in chemical mechanical polishing (CMP) has become a research hotspot. Here, four nitrogen-containing heterocyclic compounds additives, piperazine, imidazole, 1,2,4-triazole, and benzotriazole, were added to the polishing slurry to improve the MRR of silicon wafers, and their effects and mechanisms were investigated. Results showed that imidazole, 1,2,4-triazole, and benzotriazole effectively increased the MRR of silicon wafers, while piperazine did not improve the MRR, imidazole and benzotriazole increased by 42.6% and 20%, with 1,2,4-triazole showing a particularly significant effect, with a 50% increase. When the concentration of 1,2,4-triazole was 0.06 mol l −1 , the MRR increased by 100%, reaching 343.347 nm min −1 , and the surface roughness declined from 1.06 to 0.806 nm. In addition, the polishing slurry maintained good dispersibility. The polishing mechanism was analyzed using X-ray photoelectron spectroscopy, revealing that nitrogen atoms bond with silicon to form Si-N bonds, accelerating the hydrolysis of silicon wafer surface, and enhances the interaction of the abrasive with the silicon surface. This study provides new insights into the interaction between polishing slurry and silicon wafer surfaces, offering innovative CMP strategies for expanding the production of silicon wafers.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 4","pages":"044010-044010"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147908115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Effect of Silane Coupling Agent Modification on the Mechanical Properties of Carbon Nanotubes/Epoxy Composites 硅烷偶联剂改性对碳纳米管/环氧复合材料力学性能的影响

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-03-21 DOI: 10.1149/2162-8777/adc3c6

Wengang Xiao, Jihui Wang

{"title":"The Effect of Silane Coupling Agent Modification on the Mechanical Properties of Carbon Nanotubes/Epoxy Composites","authors":"Wengang Xiao, Jihui Wang","doi":"10.1149/2162-8777/adc3c6","DOIUrl":"https://doi.org/10.1149/2162-8777/adc3c6","url":null,"abstract":"Carbon nanotubes (CNTs), owing to their distinctive structure, are anticipated to assume a pivotal role in the realm of new functional and high-strength composite materials. This paper delves into the impact of surface modification of CNTs on the mechanical properties of epoxy resin composites and further analyzed the strengthening and toughening mechanisms. Research findings indicated that the surface modification of CNTs with silane coupling agent KH550 and subsequent blending with epoxy resin could remarkably enhance the mechanical properties of the composites. Specifically, the bending strength, tensile strength, and impact strength of KH550-CNTs/EP composites witnessed increases of 196.93%, 95.21%, and 262.62% respectively. The analysis revealed that surface modification could enhance the interfacial interaction between CNTs and epoxy resin, facilitating stress transfer between the two, thereby further improving the mechanical properties. This approach offers an efficient strategy for the development of sustainable high-performance epoxy resin materials.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 4","pages":"041001-041001"},"PeriodicalIF":0.0,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://iopscience.iop.org/article/10.1149/2162-8777/adc3c6/pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147891172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4