ECS Journal of Solid State Science and Technology最新文献_第2页

Effect of Vanadium Trioxide Catalyst on the Chemical Mechanical Polishing Performance on SiC–Si Facets 三氧化钒催化剂对SiC-Si表面化学机械抛光性能的影响

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-02-28 DOI: 10.1149/2162-8777/adbb8d

Zehao Yue, Chong Luo, Chenwei Wang, Jianwei Zhou, Wenbo Liu

{"title":"Effect of Vanadium Trioxide Catalyst on the Chemical Mechanical Polishing Performance on SiC–Si Facets","authors":"Zehao Yue, Chong Luo, Chenwei Wang, Jianwei Zhou, Wenbo Liu","doi":"10.1149/2162-8777/adbb8d","DOIUrl":"https://doi.org/10.1149/2162-8777/adbb8d","url":null,"abstract":"As a third-generation semiconductor, silicon carbide (SiC) is extensively utilized in photovoltaic power generation, 5 G communication, and new energy vehicles. However, the current method for the chemical mechanical polishing of SiC exhibits low material removal rates (MRRs) and suboptimal surface quality postpolishing. To address these challenges, we developed in this study a slurry that reduced the surface roughness of SiC–Si facets from 3.55 to 0.048 nm, achieving a MRR of 169 nm h −1 . The core removal mechanism involves a V 2 O 3 -catalyzed Fenton-like reaction to convert H 2 O 2 into ·OH radicals for the rapid oxidation of the SiC–Si facets, which produces a softer oxide layer that is subsequently removed by the mechanical action of abrasives. Consequently, ultrasmooth SiC–Si facets with no visible scratches were obtained. On the basis of ultraviolet–visible spectral photoluminescence and X-ray photoelectron spectroscopy analyses, we propose a catalytic oxidation mechanism leading to high-quality surfaces on the SiC–Si facets. In addition, the identification of the active sites of the reaction by means of simulations further validates the polishing mechanism.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 3","pages":"034002-034002"},"PeriodicalIF":0.0,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147883332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The Effect of the Premixed Stagnation Flame Method for the Synthesis of YMnO₃ based on Precursor Species on the Gas-Sensitive Performance of H₂S 基于前驱体物质的预混停滞火焰法合成YMnO3对H2S气敏性能的影响

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-02-01 DOI: 10.1149/2162-8777/adb17f

Wenhao An, Xinru Chang, Song Guo, Jianing Zhang, Huadong Cui, Zhendong Tang

{"title":"The Effect of the Premixed Stagnation Flame Method for the Synthesis of YMnO3 based on Precursor Species on the Gas-Sensitive Performance of H2S","authors":"Wenhao An, Xinru Chang, Song Guo, Jianing Zhang, Huadong Cui, Zhendong Tang","doi":"10.1149/2162-8777/adb17f","DOIUrl":"https://doi.org/10.1149/2162-8777/adb17f","url":null,"abstract":"Premixed stagnation flame method was used to synthesize Yttrium manganate (YMnO 3 ) nanoparticles to investigate the precursor species’ effect on the resulting products’ physical phase formation. In addition, the sensitivity of sensors constructed with the most efficient combination of precursors for detecting hydrogen sulfide (H 2 S) was evaluated. Based on thermal breakdown and infrared spectra analysis, Y(NO 3 ) 3 ·6H 2 O and (CH 3 COO) 2 Mn·4H 2 O have been shown to be the best precursors. The resulting YMnO 3 phase exhibited the highest purity, with numerous small tetrahedral particles averaging 20 nm in size attached to the surface of larger spherical particles. The assembled particles displayed a uniform size distribution ranging from 400 to 600 nm. The YMnO 3 sensors showed the most favorable response to 30 ppm H 2 S gas at 220 °C, achieving a response value of 2.94. It demonstrates excellent selectivity, repeatability, and long-term stability. The premixed stagnation flame method can be used to fabricate nanoparticles with complex composition or structure at low cost, such as hollow structure, core–shell structure or multivariate metal oxide. The porous structure of the synthesized spherical YMnO 3 nanoparticles has the advantages of small particle size and large specific surface area, showing excellent gas sensitive properties.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 2","pages":"027005-027005"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147898502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Structural and Spectroscopic Properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures 水热合成α-高（OH）结构的结构和光谱性质：退火温度的影响

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-02-01 DOI: 10.1149/2162-8777/adb17e

Alaa Omar Balkhtb, Naif H. Al-Hardan, Muhammad Azmi Abdul Hamid, Azman Jalar

引用次数: 3

The Microstructure and Electrochemical Properties of Tm₂O₃-Doped CaZrO₃ tm2o3掺杂CaZrO3的微观结构和电化学性能

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2025-01-01 DOI: 10.1149/2162-8777/ada4d6

Chong gui Lei, Fei Ruan, Xi Wu, Jinxiao Bao, Yonghe Zhang, Yuwei Ma, Junting Yang, Guoqi Liu

{"title":"The Microstructure and Electrochemical Properties of Tm2O3-Doped CaZrO3","authors":"Chong gui Lei, Fei Ruan, Xi Wu, Jinxiao Bao, Yonghe Zhang, Yuwei Ma, Junting Yang, Guoqi Liu","doi":"10.1149/2162-8777/ada4d6","DOIUrl":"https://doi.org/10.1149/2162-8777/ada4d6","url":null,"abstract":"To understand the microstructure and electrochemical performance of Tm-doped CaZrO 3 -based proton conductor in more detail, CaZr 1 −x Tm x O 3 −δ ( x = 0, 0.025, 0.05, 0.075 and 0.1) proton-conducting electrolyte samples were prepared by solid state reaction method at 1523 and 1873 K for 8 h. The crystal structure of the proton-conducting solid electrolyte was characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy. An electrochemical workstation was used to measure the electrical conductivity, the H/D isotope effect, and the chemical diffusion coefficient of hydrogen for the CaZr 1 −x Tm x O 3 −δ electrolyte. According to the results, the total conductivity of electrolyte CaZr 1− x Tm x O 3− δ falls in 4.83 × 10 –6 ∼ 7.22 × 10 –4 S cm −1 and the conductivity activation energy is 0.78 to 1.37 eV in oxygen and hydrogen atmosphere at 973 to 1173 °C. The chemical diffusion coefficient of proton in CaZr 1− x Tm x O 3− δ proton conductor is between 5.9 × 10 –7 and 4.5 × 10 –6 cm 2 s −1 in the temperature range of 973 to 1373 K and the diffusion activation energy is 55486 kJ mol −1 . The interstitial proton concentration falls in 7.97 × 10 –4 ∼ 1.21 × 10 –3 at 973 to 1073 K under hydrogen rich atmosphere. When the doping concentration (mol/mol) of Tm is 0.05, the electrolyte specimen has excellent electrochemical performance, the concentration of non-associated state Tm is approximately 2% of the total doping amount.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":"017002-017002"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147894466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Silane Coupling Agent Grafted onto the Oxidized Carbon Fiber to Improve the Interfacial Properties of Epoxy Composites 氧化碳纤维接枝硅烷偶联剂改善环氧复合材料界面性能

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-12-23 DOI: 10.1149/2162-8777/ada2b9

Wengang Xiao, Jihui Wang

{"title":"Silane Coupling Agent Grafted onto the Oxidized Carbon Fiber to Improve the Interfacial Properties of Epoxy Composites","authors":"Wengang Xiao, Jihui Wang","doi":"10.1149/2162-8777/ada2b9","DOIUrl":"https://doi.org/10.1149/2162-8777/ada2b9","url":null,"abstract":"The silane coupling agent KH550 grafted carbon fiber (CF)/epoxy resin composites were prepared by two-step method. The effect of a new modification method combining oxidation treatment and surface coating on the properties of carbon fiber reinforced resin composites was investigated. The surface activity of carbon fiber is improved by introducing oxygen-containing functional groups on the surface of carbon fiber by oxidation. Subsequently, a silane coupling agent solution was applied to the oxidized carbon fiber to repair the surface damage of the carbon fiber while bridging the carbon fiber and the epoxy resin through a chemical reaction to improve the interfacial bonding performance of the carbon fiber and the epoxy resin. The results show that the interfacial properties of the composites treated with silane coupling agent are significantly improved. The interlaminar shear strength (ILSS), flexural strength, and transverse fiber bundles tensile strength (TFBT) reach 78.22 MPa, 1178.54 MPa and 27.55 MPa, which are increased by 49.27%, 106.57% and 35.85%, respectively. This method provides a simple idea for improving the mechanical properties of CF composites.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":"011001-011001"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147893274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Study on Amino Acid Corrosion Inhibitors in Tungsten Chemical Mechanical Planarization 氨基酸缓蚀剂在钨化学机械刨平中的研究

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-12-02 DOI: 10.1149/2162-8777/ad9a7c

Deng Pan, Gaoyuan Ren, Jingwei Zhang, Li Wang, Shudong Wang

{"title":"Study on Amino Acid Corrosion Inhibitors in Tungsten Chemical Mechanical Planarization","authors":"Deng Pan, Gaoyuan Ren, Jingwei Zhang, Li Wang, Shudong Wang","doi":"10.1149/2162-8777/ad9a7c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad9a7c","url":null,"abstract":"Addition of corrosion inhibitor in the slurry during tungsten (W) chemical mechanical planarization (CMP) process is an effective way to avoid excessive corrosion. In this work, three environmentally friendly amino acids (lysine, leucine, and glutamic acid) were chosen as corrosion inhibitor during W CMP process. A smooth wafer surface was obtained after CMP with the addition of lysine. The static etching rate of the W film decreased from 45.9 Å min −1 to 7.1 Å min −1 while an excellent wafer surface roughness (Ra = 1.267 nm) was obtained with the addition of 0.25 mmol l −1 lysine. The results indicate that increasing the amount of protonated amino acid molecules in the slurry can result in the improvement of corrosion inhibition performance as well as decrease the material removal rate. Electrochemical tests indicated that the corrosion inhibition effect can be attributed to the formation of an amino acids adsorption layer on the wafer surface, inhibiting the formation of peroxotungstic acids by the interaction between H 2 O 2 and W film in the concave region. This work provides valuable guidance for the application of environmentally friendly amino acid corrosion inhibitor in the CMP field.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"13 12","pages":"124004-124004"},"PeriodicalIF":0.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147881114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Study on the Mechanism of Chemical Mechanical Polishing for 4H-SiC Based on Photoelectro-Fenton Reaction 基于光电芬顿反应的4H-SiC化学机械抛光机理研究

4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-12-02 DOI: 10.1149/2162-8777/ad9a7a

Zifeng Ni, Menghao Xia, Guomei Chen, Jie Yu, Xinchun Lu, Shanhua Qian, Da Bian

{"title":"Study on the Mechanism of Chemical Mechanical Polishing for 4H-SiC Based on Photoelectro-Fenton Reaction","authors":"Zifeng Ni, Menghao Xia, Guomei Chen, Jie Yu, Xinchun Lu, Shanhua Qian, Da Bian","doi":"10.1149/2162-8777/ad9a7a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad9a7a","url":null,"abstract":"In order to meet the requirements of atomic-level smoothness and non-damaging wafer surface with a high material removal rate (MRR) of silicon carbide (SiC), a new method assisted by photoelectron-Fenton reaction was studied to assist in chemical mechanical polishing. The coupling effects of ultraviolet light, electric field, and Fenton reaction in improving the slurry oxidation performance and the oxidation ability on the 4H-SiC wafer surface has been verified by measuring the oxidation-reduction potential, using probe detection methods, and conducting electrochemical experiments. Through immersion oxidation experiments, the oxidation mechanisms of SiC wafers were analyzed in depth using scanning electron microscope, energy-dispersive spectrometry, and X-ray photoelectron spectroscopy tests. The results showed that the photoelectro-Fenton reaction greatly enhanced the oxidation ability of the slurry, which improved the efficiency of oxide layer generation on the wafer surface. The high MRR of 102.4 nm h −1 and the low surface roughness (Ra) of 0.57 nm can be obtained after polishing under the condition of pH = 3, and the polishing and synergistic mechanism of 4H-SiC in the photoelectron-Fenton reaction solution was proposed.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"13 12","pages":"124002-124002"},"PeriodicalIF":0.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147885243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Au-free V/Al/Pt Contacts on n-Al0.85Ga0.15N:Si Surfaces of Far-UVC LEDs 远紫外 LED 的 n-Al0.85Ga0.15N:Si 表面上的无金 V/Al/Pt 触点

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-18 DOI: 10.1149/2162-8777/ad78ff

Hyun Kyong Cho, Ina Ostermay, Tim Kolbe, Jens Rass and Sven Einfeldt

引用次数: 0

Structural Characteristics and Dielectric Properties of Deposited Silver Nanoparticles with Polypyrrole on PET Films for Dielectric Devices 在 PET 薄膜上沉积银纳米粒子与聚吡咯的结构特征和介电性能，用于介电器件

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-17 DOI: 10.1149/2162-8777/ad78fe

A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif

{"title":"Structural Characteristics and Dielectric Properties of Deposited Silver Nanoparticles with Polypyrrole on PET Films for Dielectric Devices","authors":"A. Atta, Nuha Al-Harbi, E. Abdeltwab, Reem Altuijri, M. M. Abdelhamied and M. A. M. Uosif","doi":"10.1149/2162-8777/ad78fe","DOIUrl":"https://doi.org/10.1149/2162-8777/ad78fe","url":null,"abstract":"Herein, (PPy-Ag)/PET composites, consisting of silver nanoparticles (AgNPs) and polypyrrole (PPy) coated on PET, were fabricated by the polymerization process and then the films were characterized by SEM and XRD techniques. The addition of PPy-Ag on the dielectric properties of PET were determined. The XRD proved the successful synthesis of the (PPy-Ag)/PET samples. The SEM results demonstrate the effect of Ag modified the characteristics of the composite, which confirmed the interaction of (PPy-Ag)/PET. The dielectric properties of the films in frequency of 50 Hz to 5.6 MHz were measured. The density energy was enhanced from 9.1 × 10−5 for PET to 5480 × 10−5 J m−3 for (PPy-Ag)/PET. Moreover, the relaxation time decreased from 1.7 × 10−5 for PET to 2.8 × 109 sec for (PPy-Ag)/PET. The obtained data confirm the incorporation of PPy-Ag by PET. This research has led to the development of novel physico-chemical properties in flexible polymeric nanocomposite films, which could be used in high-performance energy storage devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"65 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors 通过非晶氧化铟钼薄膜晶体管中的量子阱结构实现低接触电阻

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-09-17 DOI: 10.1149/2162-8777/ad7901

Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo

{"title":"Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors","authors":"Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo","doi":"10.1149/2162-8777/ad7901","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7901","url":null,"abstract":"The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"10 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142253236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0