Effects of Ceria Abrasives on the Chemical Mechanical Polishing of Molybdenum Film with Alkaline H2O2 Slurries

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-08-28 DOI:10.1149/2162-8777/ad6f41

Lianfeng Hu, Yingjie Wang, Qiancheng Sun, Chun-Feng Hu, Haijun Cheng, Xin-Ping Qu

{"title":"Effects of Ceria Abrasives on the Chemical Mechanical Polishing of Molybdenum Film with Alkaline H2O2 Slurries","authors":"Lianfeng Hu, Yingjie Wang, Qiancheng Sun, Chun-Feng Hu, Haijun Cheng, Xin-Ping Qu","doi":"10.1149/2162-8777/ad6f41","DOIUrl":null,"url":null,"abstract":"The impact of ceria abrasives on the chemical mechanical polishing (CMP) of molybdenum (Mo) films was examined in alkaline slurries utilizing H2O2 as an oxidizer and ceria abrasives. The static etching rate (SER) decreased after the addition of ceria abrasives to the alkaline H2O2-based slurry, while the removal rate (RR) increased except for that of the slurry at pH 9. At pH 9, following the etching of the Mo film in an H2O2 solution with ceria, the surface became coated with MoO3 and Ce2Mo4O15 species. These species originated from the interaction between ceria, H2O2, and molybdic acid. The Ce2Mo4O15 particles envelop the MoO3 surface, thereby preventing the etching of loose MoO3 and hindering further oxidation of Mo to MoO3. This process effectively reduces the RR of Mo. Utilizing ceria slurries at appropriate pH values facilitates achieving a smooth surface with a reasonable RR.<inline-formula>\n<inline-graphic xlink:href=\"jssad6f41-ga.jpg\" xlink:type=\"simple\"></inline-graphic>\n</inline-formula>","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"73 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad6f41","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

The impact of ceria abrasives on the chemical mechanical polishing (CMP) of molybdenum (Mo) films was examined in alkaline slurries utilizing H₂O₂ as an oxidizer and ceria abrasives. The static etching rate (SER) decreased after the addition of ceria abrasives to the alkaline H₂O₂-based slurry, while the removal rate (RR) increased except for that of the slurry at pH 9. At pH 9, following the etching of the Mo film in an H₂O₂ solution with ceria, the surface became coated with MoO₃ and Ce₂Mo₄O₁₅ species. These species originated from the interaction between ceria, H₂O₂, and molybdic acid. The Ce₂Mo₄O₁₅ particles envelop the MoO₃ surface, thereby preventing the etching of loose MoO₃ and hindering further oxidation of Mo to MoO₃. This process effectively reduces the RR of Mo. Utilizing ceria slurries at appropriate pH values facilitates achieving a smooth surface with a reasonable RR.

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铈磨料对使用碱性 H2O2 泥浆进行钼膜化学机械抛光的影响

在使用 H2O2 作为氧化剂和铈磨料的碱性浆料中，研究了铈磨料对钼（Mo）薄膜化学机械抛光（CMP）的影响。在以 H2O2 为氧化剂的碱性浆料中加入铈磨料后，静态蚀刻率（SER）降低，而除 pH 值为 9 的浆料外，去除率（RR）增加。在 pH 值为 9 时，钼薄膜在含有铈的 H2O2 溶液中蚀刻后，表面镀上了 MoO3 和 Ce2Mo4O15 物种。这些物质来源于铈、H2O2 和钼酸之间的相互作用。Ce2Mo4O15 颗粒包裹着 MoO3 表面，从而阻止了松散 MoO3 的蚀刻，并阻碍了 Mo 进一步氧化成 MoO3。这一过程可有效降低钼的可再生率。在适当的 pH 值下使用铈浆料，有助于获得表面光滑、RR 值合理的材料。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.