Insight into the Impact of Electron Drift Trajectory on Charge Collection in Silicon Drift Detector

The internal electric field distribution is one key design consideration, which affects the charge collection efficiency in silicon drift detectors (SDDs). The internal electrostatic potential distributions along SDD front and back surfaces, which are determined by the applied voltages at cathode electrodes, define the final internal field distribution. Front-back bias coupling leads to the complexity of electrode structure design and voltage tuning. Device simulation is performed to investigate the performance of SDDs with varied bias voltages. When the cathode bias is −40 V with the first ring bias of −15 V and the outermost ring bias of −80 V, the detector is biased with a uniform electric field distribution, favorable electron drift trajectories. The simulation results provide new insight into the influence of internal electric field and electron drift trajectories on the charge collection efficiency. According to the analysis of simulation results, a 2000 × 2000 μm area concentric silicon drift detector was designed and fabricated. The electrical characteristics of the designed detectors were studied to show the validity of the proposed device design methodology. The internal electric field distribution and electron drift trajectories can be tuned to improve the charge collection efficiency.