Jie Luo, Gangping Yan, Zhiyu Song, Yanyu Yang, Yunjiao Bao, Shangbo Yang, Chuqiao Niu, Guoliang Tian, Baodong Han, Hongbo Sun, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao and Jun Luo
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引用次数: 0
摘要
无定形氧化物半导体(AOS)薄膜晶体管(TFT)因其优异的电子性能和低温制造能力,有望应用于先进的集成电路,如 2T0C 动态随机存取存储器。然而,金属与 AOS 之间的高接触电阻限制了 AOS-TFT 的应用。本研究证明,在制造过程中使用氧化钼中间层可以降低 InMoO(IMO)晶体管的接触电阻。增加氧浓度会改变氧化钼的带状结构,并在金属和沟道之间的夹层形成具有明显量子阱的分级氧化钼-氧化钼-IMO 结构。因此,量子阱吸引电子和形成带边的能力抑制了费米级钉扎效应,最终导致欧姆接触的建立。通过在退火过程中调整氧含量,优化的氧化钼中间膜显示出接触电阻的显著改善(∼400%)。这一发现表明,在未来的超标量非晶氧化物半导体薄膜中,这是一种提供出色源极/漏极接触的极具吸引力的方法。
Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors
The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.