Low Contact Resistance via Quantum Well Structure in Amorphous InMoO Thin Film Transistors

Abstract

The amorphous oxide semiconductor (AOS) thin film transistor (TFT) shows promise for use in advanced integrated circuits, such as 2T0C dynamic random-access memory, due to its excellent electronic performance and ability to be fabricated at low temperatures. Nevertheless, the high contact resistance between the metal and AOS restricts the applicability of AOS-TFT. This study demonstrates the achievement of a reduced contact resistance in InMoO (IMO) transistors by using a MoOx interlayer during fabrication. Increasing the oxygen concentration alters the band structure of MoOx and creates a graded Mo-MoOx-IMO structure with a pronounced quantum well at the interlayer between the metal and channel. Consequently, the quantum well’s ability to attract electrons and shape the band edge suppresses the Fermi-level pinning effect, ultimately leading to the establishment of an ohmic contact. The optimized MoOx interlayer showed a significant improvement in contact resistance (∼400%) through the adjustment of oxygen content during annealing procedures. This finding suggests that it is an attractive approach to provide excellent source/drain contacts in future ultra-scaled amorphous oxide semiconductor thin-films.