{"title":"研究用于超高速和相位高可靠性变化存储器的铜-锑-锑薄膜","authors":"Haipeng You, Yixiao Chen, Yue Li, Yinglu Lv, Yin Yao, Jingjing Yang, Yu Xing, Jun Chen, Tianxiang Zhu and Zhengwen Wei","doi":"10.1149/2162-8777/ad3fe6","DOIUrl":null,"url":null,"abstract":"SnSb (SS), a vital phase-change thin film, has attracted attention due to its excellent phase-change properties, but the poor amorphous stability and crystalline speed of SS greatly limit its application in rapid phase-transition memories. Here, we propose a copper (Cu)-doped SS phase change films to achieve ultra-speed and high-reliability of SS. Resistance-temperature tests show Cu-Sn-Sb possesses ultra-low crystalline and amorphous resistivity, higher phase transition speed, and lower activation energy. X-ray diffraction measurements illustrate the introduction of Cu ions hinders the growth of grains and reduce grains size. Atomic force microscopy characterizes the surface morphology of as-deposited and annealed Cu-Sn-Sb films, and difference of root-mean-square roughness before and after annealing promote Cu-Sn-Sb film is more reliable to touch electrodes. In addition, the ultra-low resistivity and fast transition speed effectively reduce thermal loss in SET and RESET process. The results reveal that Cu-Sn-Sb is a promising material for ultra-rapid phase change and high-reliability storage applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"77 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Cu-Sn-Sb Thin Film for Ultra-Speed and Phase High-Reliability Change Memory Applications\",\"authors\":\"Haipeng You, Yixiao Chen, Yue Li, Yinglu Lv, Yin Yao, Jingjing Yang, Yu Xing, Jun Chen, Tianxiang Zhu and Zhengwen Wei\",\"doi\":\"10.1149/2162-8777/ad3fe6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SnSb (SS), a vital phase-change thin film, has attracted attention due to its excellent phase-change properties, but the poor amorphous stability and crystalline speed of SS greatly limit its application in rapid phase-transition memories. Here, we propose a copper (Cu)-doped SS phase change films to achieve ultra-speed and high-reliability of SS. Resistance-temperature tests show Cu-Sn-Sb possesses ultra-low crystalline and amorphous resistivity, higher phase transition speed, and lower activation energy. X-ray diffraction measurements illustrate the introduction of Cu ions hinders the growth of grains and reduce grains size. Atomic force microscopy characterizes the surface morphology of as-deposited and annealed Cu-Sn-Sb films, and difference of root-mean-square roughness before and after annealing promote Cu-Sn-Sb film is more reliable to touch electrodes. In addition, the ultra-low resistivity and fast transition speed effectively reduce thermal loss in SET and RESET process. The results reveal that Cu-Sn-Sb is a promising material for ultra-rapid phase change and high-reliability storage applications.\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":\"77 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad3fe6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad3fe6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
SnSb(SS)是一种重要的相变薄膜,因其优异的相变特性而备受关注,但 SS 的非晶稳定性和结晶速度较差,极大地限制了其在快速相变存储器中的应用。在此,我们提出了一种铜(Cu)掺杂的 SS 相变薄膜,以实现 SS 的超高速和高可靠性。电阻-温度测试表明,铜-锡-锑具有超低的结晶和非晶电阻率、更高的相变速度和更低的活化能。X 射线衍射测量表明,铜离子的引入阻碍了晶粒的生长并减小了晶粒尺寸。原子力显微镜表征了沉积和退火后铜锑硼薄膜的表面形态,退火前后的均方根粗糙度差异表明铜锑硼薄膜更适合触摸电极。此外,超低的电阻率和快速的转变速度有效降低了 SET 和 RESET 过程中的热损耗。研究结果表明,Cu-Sn-Sb 是一种有望用于超快速相变和高可靠性存储应用的材料。
Investigation of Cu-Sn-Sb Thin Film for Ultra-Speed and Phase High-Reliability Change Memory Applications
SnSb (SS), a vital phase-change thin film, has attracted attention due to its excellent phase-change properties, but the poor amorphous stability and crystalline speed of SS greatly limit its application in rapid phase-transition memories. Here, we propose a copper (Cu)-doped SS phase change films to achieve ultra-speed and high-reliability of SS. Resistance-temperature tests show Cu-Sn-Sb possesses ultra-low crystalline and amorphous resistivity, higher phase transition speed, and lower activation energy. X-ray diffraction measurements illustrate the introduction of Cu ions hinders the growth of grains and reduce grains size. Atomic force microscopy characterizes the surface morphology of as-deposited and annealed Cu-Sn-Sb films, and difference of root-mean-square roughness before and after annealing promote Cu-Sn-Sb film is more reliable to touch electrodes. In addition, the ultra-low resistivity and fast transition speed effectively reduce thermal loss in SET and RESET process. The results reveal that Cu-Sn-Sb is a promising material for ultra-rapid phase change and high-reliability storage applications.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.