Yue Wei Mu, Hai Liang Dong, Zhi Gang Jia, Wei Jia, Jian Liang, Zhi Yong Wang, Bing She Xu
{"title":"非对称 InAlGaN/GaN 超晶格势垒结构对氮化镓基绿激光二极管光电性能的影响","authors":"Yue Wei Mu, Hai Liang Dong, Zhi Gang Jia, Wei Jia, Jian Liang, Zhi Yong Wang, Bing She Xu","doi":"10.1149/2162-8777/ad441d","DOIUrl":null,"url":null,"abstract":"An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"29 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode\",\"authors\":\"Yue Wei Mu, Hai Liang Dong, Zhi Gang Jia, Wei Jia, Jian Liang, Zhi Yong Wang, Bing She Xu\",\"doi\":\"10.1149/2162-8777/ad441d\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.\",\"PeriodicalId\":11496,\"journal\":{\"name\":\"ECS Journal of Solid State Science and Technology\",\"volume\":\"29 1\",\"pages\":\"\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Journal of Solid State Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1149/2162-8777/ad441d\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad441d","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode
An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.