ECS Journal of Solid State Science and Technology最新文献_第7页

Temperature Variations of Spectra and Images of Photoluminescence from Heavily Cr-Doped Ruby 重铬掺杂红宝石光致发光光谱和图像的温度变化

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-10 DOI: 10.1149/2162-8777/ad522b

Ami Hitomi, Hiroaki Aizawa, Toru Katsumata

引用次数: 0

Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics 局部应力对微电子单次效应灵敏度的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-07 DOI: 10.1149/2162-8777/ad522a

Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe

{"title":"Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics","authors":"Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe","doi":"10.1149/2162-8777/ad522a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522a","url":null,"abstract":"Understanding the single event effects (SEE) sensitivity of microelectronic devices and circuits is essential for long-term mission success in ionizing radiation environments. SEEs occur when a single ionizing particle strikes a device with enough energy to cause anomalous malfunction or even a catastrophic failure event. It is conventionally viewed as an electrical phenomenon, whereas this study investigates the possible role of multi-physics. Specifically, we show that localized mechanical stress in electronic devices significantly impacts the degree of SEE sensitivity. We present a technique that indirectly maps both electrical and mechanical field localization to spatially map SEE sensitivity without any need for radiation test sources. It is demonstrated on the operational amplifier LM124 under both pristine and stressed conditions. To validate our hypothesis, our experimental results are compared with those obtained from the well-established pulsed laser SEE technique. Excellent agreement between these results supports our hypothesis that SEE susceptibility may have fundamental roots in both electrical and mechanical fields. Therefore, the ability to map the localizations in these fields may indirectly map the SEE sensitivity of large area electronics, which is very expensive in time and resources.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"166 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of TiO2 Nanoparticles on Enhancing the Properties Activity of Organic Polymeric Materials for Industrial Applications 二氧化钛纳米粒子对提高工业应用有机聚合物材料性能活性的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-07 DOI: 10.1149/2162-8777/ad522e

B. M. Alotaibi, Haifa A. Alyousef, A. Atta, S. A. Rizk, Abdelfattah T. Elgendy

{"title":"Influence of TiO2 Nanoparticles on Enhancing the Properties Activity of Organic Polymeric Materials for Industrial Applications","authors":"B. M. Alotaibi, Haifa A. Alyousef, A. Atta, S. A. Rizk, Abdelfattah T. Elgendy","doi":"10.1149/2162-8777/ad522e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522e","url":null,"abstract":"Novel composite (MC/TiO2) films consisting of titanium dioxide nanoparticles (TiO2NPs) and organic polymer methylcellulose (MC), were synthesized for applied in photocatalysis and industrial sectors. The preparation of the nanocomposites MC/TiO2 films were verified successfully by EDX technique, which demonstrated the uniform distribution of TiO2 in the MC. Moreover, in frequency of 20 Hz to 5.5 MHz, the dielectric properties of MC as a function of TiO2 concentration were determined. The conductivity improved from 5.8 × 10−8 S.cm−1 for MC to 3.8 × 10−6 S.cm−1 for the composite MC/TiO2, and the dielectric constant <inline-formula>\u0000<tex-math>\u0000<?CDATA ${varepsilon }^{{prime} }$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msup><mml:mrow><mml:mi>ε</mml:mi></mml:mrow><mml:mrow><mml:mo accent=\"true\">′</mml:mo></mml:mrow></mml:msup></mml:math>\u0000<inline-graphic xlink:href=\"jssad522eieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> has risen from 87 for MC to 179 for the composite MC/TiO2. In addition, the energy density increases from 3.86 × 10−4 J m−3 for MC to 7.94 × 10−4 J m−3 for MC/TiO2, and the relaxation time <inline-formula>\u0000<tex-math>\u0000<?CDATA ${tau }_{r}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msub><mml:mrow><mml:mi>τ</mml:mi></mml:mrow><mml:mrow><mml:mi>r</mml:mi></mml:mrow></mml:msub></mml:math>\u0000<inline-graphic xlink:href=\"jssad522eieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> dropped from 11.5 × 10−5 sec to 2.58 × 10−5. In summary, the data investigated that the dielectric characteristics of MC/TiO2 were modified for usage in different applications as wastewater treatment and energy storage devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"221 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and Spectroscopic Features of K2B4O7-Li2B4O7 -TeO2 Glasses Modified with Cu2+ Ions 用 Cu2+ 离子修饰的 K2B4O7-Li2B4O7 -TeO2 玻璃的光学和光谱特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-07 DOI: 10.1149/2162-8777/ad522c

T. Satyanarayana, Chandra Sekhar K., Abdul Hameed, G. Sangeetha, Shareefuddin Md

{"title":"Optical and Spectroscopic Features of K2B4O7-Li2B4O7 -TeO2 Glasses Modified with Cu2+ Ions","authors":"T. Satyanarayana, Chandra Sekhar K., Abdul Hameed, G. Sangeetha, Shareefuddin Md","doi":"10.1149/2162-8777/ad522c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522c","url":null,"abstract":"This work aims to analyze the structural properties of lithium and potassium tetra borate glasses that have undergone modification with tellurium oxide and Cu2+ ions with the chemical composition xK2B4O7-(80-x) Li2B4O7−19TeO2−1CuO [KLTC] (with x = 50, 60, 70 & 80 mole%). The analysis is performed by using different spectroscopic methods. The absence of sharp Braggs peaks in the X-ray diffraction spectra confirmed the amorphous nature of the processed glasses. The optical parameter values were obtained from Tauc and Urbach plots. The band gap values decreased in proportion with the content of K2B4O7 in KLTC. On these samples EPR studies were put on in order to determine the ligand field surrounded by the Cu2+ ions. The spin-Hamiltonian parameters suggest that the Cu2+ ions are located in tetragonally stretched octahedral locations. The existence of metal cations along with the characteristics borate as well as tellurite structural units were confirmed by the peaks observed in the Fourier transform infrared and Raman spectra. Among the prepared KLTC glass samples, KLTC-80 is found to be the best sample in the field of fiber optics communication.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"27 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of AgNPs@AuNPs/GO’s Impact on Water-Based Drilling Muds and Comparison with Graphane, GO, AuNPs/GO’s Effects: Labs Research AgNPs@AuNPs/GO对水基钻井泥浆的影响分析及与石墨烷、GO、AuNPs/GO影响的比较：实验室研究

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-30 DOI: 10.1149/2162-8777/ad4f14

Abdullah Özkan and Semih Tıknas

{"title":"Analysis of AgNPs@AuNPs/GO’s Impact on Water-Based Drilling Muds and Comparison with Graphane, GO, AuNPs/GO’s Effects: Labs Research","authors":"Abdullah Özkan and Semih Tıknas","doi":"10.1149/2162-8777/ad4f14","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4f14","url":null,"abstract":"We investigateed the effect of AgNPs@AuNPs/GO on the rheological and filtration properties of sodium-bentonite water based drilling muds (Na-bentonite WBDM) and compared the possible effects of graphene, graphene oxide (GO), and graphene oxide functionalized with gold nanoparticles (AuNPs/GO) on Na-bentonite WBDM. Graphene, AuNPs, AgNPs, GO, AuNPs/GO, and AgNPs@AuNPs/GO were initially synthesized, and subsequently subjected to scanning electron microscopy, tranmission electron microscopy, energy-dispersive X-ray analysis, reflection absoprtion infrared spectroscopy, and X-ray photoelectron spectroscopy characterization. At a rate of 0.0005% to 0.01% (w/v), synthesized and described nanoparticles were added to Na-bentonite WBDM. Rheological and filtration loss analyses of the nanomaterial-containing Na-bentonite WBDM were then performed following American Petroleum Institute Standards. According to the study’s findings, adding graphene and AgNPs/GO to drilling mud at varying rates did not have any influence on PV values when compared to spud mud; however, adding GO and AgNPs@AuNPs/GO had a positive effect of 67% and 33%. Furthermore, the addition of graphene, GO, AuNPs/GO, and AgNPs@AuNPs/GO increased the AV values by 17.6%, 44%, 18.75%, 26%, YP values; by 44.4%, 44%, 30%, 22%, 10 s values; by 55.5%, 33%, 30%, 66.6%, 10 min values; by 30.7%, 43%, 42%, 46%, filtration loss values; by 10%, 9.52%, 8.4%, 3.84%. Highlights AuNPs, AgNPs, Graphene and GO were synthesized seperatally, then GO were functionalized with AuNPs croslinked AgNPs. Nanomaterials were characterized by SEM, TEM, EDX, RAIRS and XPS. AgNPs@AuNPs/GO, which were tested for the first time in water based drilling mud.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"49 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141194402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ZnSb2O4 Thin Films Synthesized by Nebulizer Spray Pyrolysis: Structural, Optical, and Optoelectrical Properties 雾化喷射热解法合成的 ZnSb2O4 薄膜：结构、光学和光电特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-26 DOI: 10.1149/2162-8777/ad4c97

Abdullah Alsulami

{"title":"ZnSb2O4 Thin Films Synthesized by Nebulizer Spray Pyrolysis: Structural, Optical, and Optoelectrical Properties","authors":"Abdullah Alsulami","doi":"10.1149/2162-8777/ad4c97","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c97","url":null,"abstract":"Zinc antimony oxide (ZnSb2O4) thin films were prepared by inexpensive nebulizer spray pyrolysis. X-ray diffraction analysis showed that the ZnSb2O4 thin films have a tetragonal structure. The analysis of structural indices indicate that the grain size of the ZnSb2O4 films was enhanced by expanding the thickness of the ZnSb2O4 layers, and the dislocation density was decreased. Further, the optical reflectance, R, and transmittance, T, of the ZnSb2O4 sheets, were used to investigate the optical characteristics of these layers. The optical investigations of the ZnSb2O4 films refer to an improvement in the refractive index values, Urbach energy, and absorption coefficient by boosting the thickness. Moreover, the energy gap analysis of these films shows that their energy gap decreased from 3.75 to 3.47 eV as the thickness increased. The investigation of optoelectrical characteristics involves improving the optical conductivity, electrical conductivity, optical carrier concentration, and optical mobility of the ZnSb2O4 films by growing the thickness. The nonlinear optical indices of the ZnSb2O4 layers were deduced, and it was noted that the boost in the nonlinear optical indices of these films occurred by raising the thickness. Furthermore, the ZnSb2O4 films displayed n-type semiconducting properties by the hot probe equipment.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141170440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor 原子尺度掺杂铪以强化锗 P 型金属氧化物半导体场效应晶体管栅极堆栈的氧化锗界面层

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad46f0

Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien

{"title":"Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor","authors":"Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien","doi":"10.1149/2162-8777/ad46f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad46f0","url":null,"abstract":"We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"218 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Polish-Induced Gouges on Single Crystal Sapphire Substrates 单晶蓝宝石衬底上的抛光剂诱导刨花的表征

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad4675

Jinhyung Lee, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Prajeen Dumbare and Kannan Balasundaram

{"title":"Characterization of Polish-Induced Gouges on Single Crystal Sapphire Substrates","authors":"Jinhyung Lee, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Prajeen Dumbare and Kannan Balasundaram","doi":"10.1149/2162-8777/ad4675","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4675","url":null,"abstract":"Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"25 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Optical, and Magnetic Properties of Mn Doped Zn3P2 Diluted Magnetic Semiconductor Nanoparticles 掺锰 Zn3P2 稀释磁性半导体纳米粒子的结构、光学和磁学特性

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad47d1

Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi

{"title":"Structural, Optical, and Magnetic Properties of Mn Doped Zn3P2 Diluted Magnetic Semiconductor Nanoparticles","authors":"Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi","doi":"10.1149/2162-8777/ad47d1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad47d1","url":null,"abstract":"Mn-doped Zn3P2-diluted magnetic semiconducting nanoparticles (Zn0.98Mn0.02P2, Zn0.96Mn0.04P2, Zn0.94Mn0.06P2, and Zn0.92Mn0.08P2) were synthesized by a conventional solid-state reaction followed by a subsequent vacuum annealing process. The formation of a tetragonal structure of pure and Mn-doped Zn3P2 was confirmed by X-ray diffraction studies, with no evidence of any further phases. Lattice parameters dicrease from a = b = 8.133 Å, c = 11.459 Å to a = b = 8.041 Å, c = 11.410 Å with increasing dopant concentration. Scanning electron microscpy analysis indicated that all samples that underwent doping exhibited agglomeration in the scanned range of 500 nm. Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. Mn-doped Zn3P2 nanoparticles are potential materials for future spintronics.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"129 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Ultrasonication Treatment on Mechanical, Optical, and Physiochemical Properties of Polyvinyl-alcohol/cornstarch Biocomposite Thin Films 超声处理对聚乙烯醇/玉米淀粉生物复合薄膜机械、光学和理化特性的影响

IF 2.2 4区材料科学

ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI: 10.1149/2162-8777/ad458e

Abdul Rauf Jamali, Asif Ahmed Shaikh and Ali Dad Chandio

{"title":"Influence of Ultrasonication Treatment on Mechanical, Optical, and Physiochemical Properties of Polyvinyl-alcohol/cornstarch Biocomposite Thin Films","authors":"Abdul Rauf Jamali, Asif Ahmed Shaikh and Ali Dad Chandio","doi":"10.1149/2162-8777/ad458e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458e","url":null,"abstract":"Over the past few decades, Polyvinyl-alcohol (PVOH)/cornstarch (CS)-based composite thin films have garnered significant interest due to their enhanced properties. Synthesis of such films relies heavily on depolymerization reactions within the solution of the PVOH/CS blends. Understanding how depolymerization affects the crystal structure and properties of these films is crucial for further improvement. This study aims to evaluate the depolymerization effects of crosslinked PVOH incorporated with CS as filler materials (with an 80:20 mass ratio) using ultrasonication at various time intervals while maintaining a constant frequency of 25 KHz. The prepared solution is then cast into thin films using blade coating. Comparative analyses were then conducted between samples subjected to ultrasonication (treated) and without ultrasonication (untreated) to assess their properties based on structural physical, mechanical, optical, and aspects of biodegradability . The investigation revealed significant changes in crystal structure and lattice strains following ultrasonication of the PVOH/CS solution when compared to untreated PVOH/CS samples. Importantly, longer ultrasonication times correlated with increased tensile strength. Additionally, the treated samples led to improvements in thin film transparency and a notable decrease in absorbance. These changes were attributed to the mechanical depolymerization induced by ultrasonication, aligning the thin films with the necessary properties for food packaging applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0