Temperature Variations of Spectra and Images of Photoluminescence from Heavily Cr-Doped Ruby

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-06-10 DOI:10.1149/2162-8777/ad522b

Ami Hitomi, Hiroaki Aizawa, Toru Katsumata

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引用次数: 0

Abstract

Photoluminescence (PL) spectra, intensities, and image brightness of 0.1–6.0 at% Cr-doped ruby were investigated across temperatures ranging from 24° to 600 °C. PL emissions at λ = 670, 694, 707, and 715 nm were observed in rubies doped with 0.1–1.0 at% Cr. In rubies with higher doping levels of 1.5–6.0 at% Cr, an additional PL emission at λ = 770 nm was detected. PL intensities at λ = 694, 707, 715, and 770 nm decreased with increasing temperatures from 24° to 600 °C, while the PL intensity at λ = 670 nm showed a similar temperature-dependent decrease. The variation in PL image brightness with temperature, particularly the increase observed from 24° to 200 °C, is predominantly influenced by the PL intensity variations at λ = 670 nm. Decay curves and fluorescence lifetimes of PL from ruby with various Cr concentrations were also evaluated at temperatures RT-200 °C.

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重铬掺杂红宝石光致发光光谱和图像的温度变化

研究了 0.1-6.0 at% 铬掺杂红宝石在 24° 至 600 °C 温度范围内的光致发光 (PL) 光谱、强度和图像亮度。在掺杂 0.1-1.0 阿特% Cr 的红宝石中，在 λ = 670、694、707 和 715 纳米波长处观察到了 PL 发射。在掺杂了 1.5-6.0 阿特% Cr 的红宝石中，在 λ = 770 纳米波长处检测到了额外的 PL 发射。λ = 694、707、715 和 770 nm 处的聚光强度随着温度从 24° 到 600 °C 的升高而降低，而 λ = 670 nm 处的聚光强度也出现了类似的随温度升高而降低的现象。荧光图像亮度随温度的变化，特别是在 24° 至 200 °C期间观察到的增加，主要是受λ = 670 nm处荧光强度变化的影响。在 RT-200 °C 温度下，还评估了不同铬浓度的红宝石的聚光衰减曲线和荧光寿命。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.