Zein K. Heiba, Ah Abd Ellatief, Mohamed Bakr Mohamed, A. M. El-naggar, Hassan Elshimy, Sameh I. Ahmed, Ismail A.M. Ibrahim
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引用次数: 0
摘要
CdS 和 Cd0.9Co0.1S 样品是在氮气环境下制备的。采用 X 射线衍射法进行了结构分析。采用 Rietveld 精炼法确定了结构和微观结构参数。能量色散光谱和傅立叶变换红外分析证实了钴离子在 CdS 基体中的结合。CdS 样品具有非磁性特征,而掺 Co 的样品则表现出磁性。我们研究了磁性转变的起源,发现了铁磁有序的出现,以及掺入 Co 后向稀释磁性半导体(DMS)的转变,计算得出的磁矩为 2.56 μB。我们还研究了这种钴掺杂驱动的转变如何影响光学、光致发光和电子特性。这些影响与超深缺陷态的出现有关。电子特性是利用密度泛函理论(DFT)和 HSE06 混合函数近似计算得出的。掺 Co 和纯 CdS 的能带隙计算值分别为 2.13 和 2.12 eV,而紫外分析的实验测量值分别为 2.26 和 2.15 eV。我们采用 DFT 计算来研究这两种样品的磁性、吸收系数、折射率、实介电分量和虚介电分量以及能量损失光谱。
Impact of Cobalt-Doping on the Optical, Magnetic, and Electronic Features of Hexagonal Cadmium Sulfide
CdS and Cd0.9Co0.1S samples were prepared under an N2 atmosphere. The structural analysis was conducted using X-ray diffraction. The structural and microstructure parameters were determined using Rietveld refinement method. The incorporation of cobalt ions into CdS matrix was confirmed by energy-dispersive spectroscopy and Fourier-transform infrared analysis. CdS sample has a non-magnetic feature while the Co-doped sample exhibited a magnetic behavior. The origin of magnetic property transformation has been investigated, revealing the emergence of ferromagnetic ordering and the conversion to a diluted magnetic semiconductor (DMS) with a calculated magnetic moment of 2.56 μB upon Co doping. We also investigated how this Cobalt-doping-driven transformation affected optical, photoluminescence, and electronic properties. These effects correlated with the emergence of hyper-deep defect states. Electronic properties were calculated using density functional theory (DFT) with the HSE06 hybrid functional approximation. The calculated energy bandgaps for both Co-doped and pure CdS were 2.13 and 2.12 eV, respectively, while experimental measurements from our UV analysis yielded values of 2.26 and 2.15 eV. DFT calculations were employed to explore the magnetic properties, absorption coefficients, refractive indices, real and imaginary dielectric components, and energy loss spectra in both samples.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.