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1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)最新文献

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Low-frequency noise characteristics of polysilicon emitter SiGe bipolar transistors made by SEG/NSEG process and given F and/or BF/sub 2/ implants 采用SEG/NSEG工艺制备的多晶硅发射极SiGe双极晶体管在F和/或BF/sub 2/植入物下的低频噪声特性
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821474
N. Lukyanchikova, N. Garbar, M. Petrichuk
{"title":"Low-frequency noise characteristics of polysilicon emitter SiGe bipolar transistors made by SEG/NSEG process and given F and/or BF/sub 2/ implants","authors":"N. Lukyanchikova, N. Garbar, M. Petrichuk","doi":"10.1109/EDMO.1999.821474","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821474","url":null,"abstract":"Noise investigations of Si/SiGe heterojunction bipolar transistors (HBTs) grown by a SEG/NSEG process are carried out in the frequency range f=1 Hz to 100 kHz under different operating conditions. The polysilicon emitter devices given a F implant into the polysilicon emitter and/or a BF/sub 2/ implant into the buried oxide as well as the devices without either F or BF/sub 2/ implants are studied. It is shown that the 1/f fluctuations of the recombination base current and the 1/f fluctuations of the conductivity of the interfacial oxide layer in the emitter are responsible for the low-frequency noise typical for the devices considered. The analysis of the noise results allow to conclude that two different components contribute into the recombination base current observed. One of these components is accompanied by a high 1/f noise and can be suppressed by a BF/sub 2/ implantation. It is shown that this component can be attributed to recombination in the lateral emitter/base depletion region that is partly inside the extrinsic base polysilicon. Therefore, it is revealed that the BF/sub 2/ implant can influence not only the collector junction but also the emitter junction and, hence, its role in HBTs studied is more complicated than supposed before. Another recombination component of the base current is accompanied by a much lower noise and is decreased by a F implantation. This component can be due to recombination at the interface between the low doped emitter layer and the oxide deposited on this layer. In addition, a significant decrease of the 1/f noise in the interfacial oxide layer by a F implantation is found. This effect is explained by the decrease of the layer resistance and supports the idea that the F implant promotes the break-up of this layer.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116572960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harmonics photodetection analysis in a multi-electrode semiconductor optical amplifier (SOA) 多电极半导体光放大器(SOA)的谐波光检测分析
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821499
A. Sharaiha, M. Guegan, J. Le Bihan
{"title":"Harmonics photodetection analysis in a multi-electrode semiconductor optical amplifier (SOA)","authors":"A. Sharaiha, M. Guegan, J. Le Bihan","doi":"10.1109/EDMO.1999.821499","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821499","url":null,"abstract":"The influence of cross gain modulation on the harmonics photodetection response is presented in a multi-electrode SOA. The cross gain modulation permits the achievement of low photodetection distortion for particular points as functions of optical input power and bias current. Experimental results are obtained by using a three electrode SOA of 500 /spl mu/m electrode length.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131379872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs 单双InGaP/GaAs HBTs的非线性行为观察
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821478
D. Webster, A. Rezazadeh, M. Sotoodeh, A. Khalid, Z. Hu, M. Hutabarat, G. Ataei, D. Haigh
{"title":"Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs","authors":"D. Webster, A. Rezazadeh, M. Sotoodeh, A. Khalid, Z. Hu, M. Hutabarat, G. Ataei, D. Haigh","doi":"10.1109/EDMO.1999.821478","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821478","url":null,"abstract":"This paper explores the bias and voltage gain dependence of the small signal intermodulation distortion performance of the single and double InGaP HBT. It was found that the HBT has a zero in its 3rd order intermodulation distortion at low collector currents caused by the emitter resistance. The collector current at which this occurs can be approximately calculated with a simple formula. The small signal intermodulation distortion was little affected by collector voltage or voltage gain. There was very little difference between the small signal intermodulation distortion performance of the single and double HBT. Through a Volterra analysis it is demonstrated that the zero in 3rd order intermodulation distortion can be moved to a higher collector current by reducing emitter resistance.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122655572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Noise properties in SiGe BiCMOS devices SiGe BiCMOS器件的噪声特性
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821473
J. Tartarin, R. Plana, M. Borgarino, H. Lafontaine, M. Regis, O. Llopis, S. Kovacic
{"title":"Noise properties in SiGe BiCMOS devices","authors":"J. Tartarin, R. Plana, M. Borgarino, H. Lafontaine, M. Regis, O. Llopis, S. Kovacic","doi":"10.1109/EDMO.1999.821473","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821473","url":null,"abstract":"This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier. Concerning their low frequency noise performances, the devices exhibit 1/f noise source with an excess corner noise frequency in the 1 kHz range which is close to the state of the art for a monolithic technology. We further developed a scaleable non linear low frequency noise model implementable in a commercial microwave software. Finally, additional residual phase noise measurements confirmed the impressive capabilities of SiGe HBT technology for low noise RF applications.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130697374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 用数值模拟方法研究微波GaInP/GaAs HBTs的烧蚀效应
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821495
A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, M. Vanzi
{"title":"Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations","authors":"A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, M. Vanzi","doi":"10.1109/EDMO.1999.821495","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821495","url":null,"abstract":"GaInP/GaAs HBTs demonstrate outstanding long-term reliability performance. Nevertheless they still suffer from a short-term DC current gain instability, known as the burn-in effect. Even if the effect is usually attributed to hydrogen contamination passivating the carbon atoms employed as base dopant, the underlying physical mechanism is still unclear. The present work addresses the burn-in effect by means of numerical simulations performed with the device simulation software BLAZE by Silvaco. The results give support to the hypothesis that the burn-in effect is a surface related phenomenon. The simulations reveal that a fixed surface charge located near the edge of the emitter mesa should be introduced. The work points out also that simultaneous variations of both this charge and of the surface recombination velocity should be taken into account. This simulation approach could be a useful tool, in order to develop a chemical/physical model of the burn-in effect.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128090689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
CMOS PIN fiber receiver and DVD OEIC CMOS PIN光纤接收器和DVD OEIC
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821469
A. Ghazi, T. Heide, H. Zimmermann, P. Seegebrecht
{"title":"CMOS PIN fiber receiver and DVD OEIC","authors":"A. Ghazi, T. Heide, H. Zimmermann, P. Seegebrecht","doi":"10.1109/EDMO.1999.821469","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821469","url":null,"abstract":"Two monolithically integrated PIN CMOS OEICs (optoelectronic integrated circuits) are presented: A high-speed CMOS PIN fiber receiver for optical data transmission and optical interconnects and a CMOS PIN OEIC for optical storage systems. Both OEICs were integrated in a 1.0 /spl mu/m twin-well CMOS-process, using PIN-photodiodes as photodetectors. For the high-speed fiber receiver a NRZ data rate of 622 Mbit/s is achieved at a wavelength of 850 nm. For the CMOS DVD OEIC -3dB-frequencies up to 45 MHz are obtained at a wavelength of 638.3 nm. Compared to our previous work the sensitivity of the OEIC is doubled.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124249018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Investigation of optical-microwave frequency conversion processes for PIN photodiode PIN光电二极管的光微波变频工艺研究
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821468
J. Dawidczyk, B. Galwas, S. Malyshev
{"title":"Investigation of optical-microwave frequency conversion processes for PIN photodiode","authors":"J. Dawidczyk, B. Galwas, S. Malyshev","doi":"10.1109/EDMO.1999.821468","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821468","url":null,"abstract":"Investigations of optical-microwave mixing process performed on a PIN photodetector are reported in the paper. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 /spl mu/m has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode has been assumed. The parameters of nonlinear equivalent circuit of the device have been extracted from the measured data. The influence of nonlinear responsivity has been considered. The short mathematical analysis, and measurement results are presented.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116029198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical characterisation of multi-layered CPW directional couplers 多层CPW定向耦合器的数值表征
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821487
N. Somasiri, X. Chen
{"title":"Numerical characterisation of multi-layered CPW directional couplers","authors":"N. Somasiri, X. Chen","doi":"10.1109/EDMO.1999.821487","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821487","url":null,"abstract":"This paper presents a numerical characterisation of two 3 dB multi-layered CPW directional couplers, which were fabricated at King's College London. The quasi TEM models of the couplers are studied with the help of a 2-dimensional finite element program. The characteristic impedances of even/odd modes for both couplers are obtained and verified. For the purpose of optimisation, the characteristic impedances varying with the coupling gaps in both couplers are also computed.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116707740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromagnetic modelling and design of multilayer coplanar waveguide lowpass filters 多层共面波导低通滤波器的电磁建模与设计
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821489
Kegiang Fu, D. Budimir
{"title":"Electromagnetic modelling and design of multilayer coplanar waveguide lowpass filters","authors":"Kegiang Fu, D. Budimir","doi":"10.1109/EDMO.1999.821489","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821489","url":null,"abstract":"A multilayer coplanar waveguide lowpass filter on a GaAs realised by using multilayer MMIC technology is presented and the performance is investigated with electromagnetic simulations. The filter is a Chebyshev type employing three low impedance sections and two high impedance sections. The low impedance sections have a characteristic impedance of 3 /spl Omega/. The high impedance lines use a narrow centre conductor mounted on top of the polyimide membrane layers in order to achieve as high an impedance as possible (100 /spl Omega/).","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123833269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of amplified luminescence, recombination nonlinearities and temperature on high-speed modulation and chaotic properties of long-wavelength laser diodes 发光放大、复合非线性和温度对长波长激光二极管高速调制和混沌特性的影响
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821498
L. Burov, M. Kramar, A. Kuleshov, G. I. Ryabtsev, K. Shore, S. V. Voitikov
{"title":"Influence of amplified luminescence, recombination nonlinearities and temperature on high-speed modulation and chaotic properties of long-wavelength laser diodes","authors":"L. Burov, M. Kramar, A. Kuleshov, G. I. Ryabtsev, K. Shore, S. V. Voitikov","doi":"10.1109/EDMO.1999.821498","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821498","url":null,"abstract":"The high-speed response of long-wavelength laser diodes to harmonic modulation of the injection current has been investigated and modeled. It is shown that intrinsic nonlinearities of gain, recombination processes, and amplified luminescence significantly affect the high-speed laser dynamics. The description of amplified luminescence is based on a space distribution model. Increase in the amplitude of current modulation results in a non-harmonic output response whose form is greatly dependent on the value of the modulation frequency. For a certain frequency region the laser diode output displays harmonic-like response, and the higher the mean current the faster the distortion of harmonic response. It has been shown that temperature increase distorts the modulation characteristics of the lasers. Hence, intrinsic nonlinearities and temperature of long-wavelength laser diodes may create and govern complex regimes of laser dynamics including those used in encoding-decoding laser systems.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124725428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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