SiGe BiCMOS器件的噪声特性

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI:10.1109/EDMO.1999.821473

J. Tartarin, R. Plana, M. Borgarino, H. Lafontaine, M. Regis, O. Llopis, S. Kovacic

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引用次数: 1

摘要

本文研究了一种商用SiGe BiCMOS技术的噪声特性。我们给出了一些与这些器件高频噪声特性有关的结果，并定义了一些设计低噪声放大器的几何规则。关于其低频噪声性能，该器件具有1/f噪声源，其多余的角噪声频率在1 kHz范围内，接近单片技术的最新水平。我们进一步开发了可在商用微波软件中实现的可缩放非线性低频噪声模型。最后，额外的剩余相位噪声测量证实了SiGe HBT技术在低噪声射频应用中的令人印象深刻的能力。

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Noise properties in SiGe BiCMOS devices

This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier. Concerning their low frequency noise performances, the devices exhibit 1/f noise source with an excess corner noise frequency in the 1 kHz range which is close to the state of the art for a monolithic technology. We further developed a scaleable non linear low frequency noise model implementable in a commercial microwave software. Finally, additional residual phase noise measurements confirmed the impressive capabilities of SiGe HBT technology for low noise RF applications.

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来源期刊

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

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