1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)最新文献

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High-performance SiGe pMODFETs grown by UHV-CVD UHV-CVD生长的高性能SiGe pmodfet
S. Koester, R. Hammond, J. Chu, J. Ott, P. Mooney, L. Perraud, K. Jenkins
{"title":"High-performance SiGe pMODFETs grown by UHV-CVD","authors":"S. Koester, R. Hammond, J. Chu, J. Ott, P. Mooney, L. Perraud, K. Jenkins","doi":"10.1109/EDMO.1999.821455","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821455","url":null,"abstract":"The fabrication and characterization of 0.1 /spl mu/m-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge-Si/sub 0.4/Ge/sub 0.6/ pMODFETs with peak extrinsic transconductance (g/sub max/) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (f/sub T/) of 42 GHz and maximum frequency of oscillation (f/sub max/) of 86 GHz. We have also investigated the performance of Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.7/Ge/sub 0.3/ pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited DC transconductances as high as g/sub max/=377 mS/mm, and had values of f/sub T/=49 GHz and f/sub max/=95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.65/Ge/sub 0.35/ pMODFETs grown on high-p Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (G/sub a/) of 18 dB (7.6 dB) at 3 GHz (18 GHz).","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129508410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Development of components and integration techniques for high-speed InP-based OEIC 基于inp的高速OEIC组件与集成技术的发展
B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren
{"title":"Development of components and integration techniques for high-speed InP-based OEIC","authors":"B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren","doi":"10.1109/EDMO.1999.821078","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821078","url":null,"abstract":"Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117346434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD evaluation of AlGaN/GaN device performance for high power applications 高功率应用中AlGaN/GaN器件性能的TCAD评估
S.K. Jones, S. Marsh, W. A. Phillips
{"title":"TCAD evaluation of AlGaN/GaN device performance for high power applications","authors":"S.K. Jones, S. Marsh, W. A. Phillips","doi":"10.1109/EDMO.1999.821461","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821461","url":null,"abstract":"A simulation study of AlGaN/GaN heterojunction FET (HFET) device design is presented. 2D physical device modelling, within a TCAD framework, is used to predict device DC and small-signal RF performance. These TCAD predictions are input to a microwave circuit design and simulation tool to assess the performance of GaN-based devices for an X-band amplifier application. The sensitivity of the device and amplifier to self-heating and ohmic contact resistance is discussed.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117080585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bias dependence study of the HBT small-signal equivalent circuit elements using a new parameter extraction technique 利用一种新的参数提取技术研究HBT小信号等效电路元件的偏置依赖性
M. Sotoodeh, A. Khalid, A. Rezazadeh
{"title":"Bias dependence study of the HBT small-signal equivalent circuit elements using a new parameter extraction technique","authors":"M. Sotoodeh, A. Khalid, A. Rezazadeh","doi":"10.1109/EDMO.1999.821084","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821084","url":null,"abstract":"An improved HBT small-signal parameter extraction procedure is presented in which all the equivalent circuit elements are extracted analytically without reference to numerical optimisation. This parameter extraction technique is applied to InGaP-GaAs DHBTs and it is shown that the agreement between the measured and simulated S- and Z-parameters in the entire range of frequency is excellent such that an optimisation step following the analytical extraction procedure is not necessary. Bias dependence of various small-signal parameters is studied. High current effects such as B-C capacitance reduction, base pushout, and device self-heating are observed experimentally and explained in terms of device physics and parameters.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117310234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge/sup +/ implantation Ge/sup +/注入形成的NPN和PNP SiGe异质结双极晶体管的表征
M. Mitchell, S. Nigrin, F. Cristiano, P. Ashburn, P. Hemment
{"title":"Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge/sup +/ implantation","authors":"M. Mitchell, S. Nigrin, F. Cristiano, P. Ashburn, P. Hemment","doi":"10.1109/EDMO.1999.821494","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821494","url":null,"abstract":"This work compares NPN and PNP SiGe HBTs fabricated simultaneously using Ge/sup +/ implantation in the base to achieve an average Ge concentration of 4 at.%. Electrical measurements are presented and discussed with TEM and SIMS analysis. The results show that the PNP HBTs give superior performance to the NPNs, as they have more ideal collector characteristics. The NPN HBTs exhibit collector-emitter leakage. Both types of Ge/sup +/ implanted device have non-ideal base currents. TEM images show that both NPN and PNP devices have a high density of defects in the Ge/sup +/ implanted area. The electrical results are explained by the opposing effect of the Ge/sup +/ implant on the diffusion coefficients of boron and arsenic, as seen in the SIMS profiles. The increased emitter diffusion in the NPN HBTs creates a narrower base region, which is more prone to collector-emitter leakage. The hairpin dislocations in the base are thought to be the cause of the base current ideality deterioration.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127841547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Using non linearity in bipolar transistors for optical demodulator designs 利用非线性双极晶体管进行光解调器设计
P. Langlois
{"title":"Using non linearity in bipolar transistors for optical demodulator designs","authors":"P. Langlois","doi":"10.1109/EDMO.1999.821492","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821492","url":null,"abstract":"Frequency conversion by the transistor used for optical sensing has used either the non linearity of the base emitter diode or the base collector diode. The optimum bias conditions for minimum insertion loss for both examples are analysed using the Ebers Moll transistor model. A simple Spice procedure is used to demonstrate the non linearity. If the b-c diode is used the non linearity is at least /spl beta/ (the current gain) times that when using the b-e diode; it is more when a finite emitter resistance is included, which for an HBT could mean a factor of 1000 times improvement. The frequency performance is reduced by a factor of about 25. The optimum bias for the b-e circuit defines the collector current; for the b-c circuit it is is nearly independent of collector current. A circuit with an added diode between collector and base, which can avoid forward biased b-c problems has identical non linearity characteristics to the b-c circuit and offers some improvement in high frequency performance.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115917785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reducing the intermodulation distortion in multi-carrier microwave power amplifiers 减少多载波微波功率放大器的互调失真
K. Madani
{"title":"Reducing the intermodulation distortion in multi-carrier microwave power amplifiers","authors":"K. Madani","doi":"10.1109/EDMO.1999.821477","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821477","url":null,"abstract":"This paper demonstrated the potential of the novel technique of the active predistortion linearisation. In comparison to the competitive methods, the proposed technique has the distinct advantage of reducing all the components of IMD distortion uniformly and over a wide frequency range, without significantly affecting the power efficiency.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122076958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Complex relative permittivity measurement of ceramics by Fabry-Perot resonator in millimeter frequency range 用法布里-珀罗谐振器测量陶瓷在毫米频率范围内的复相对介电常数
Y. Itoh, Y. Higashida
{"title":"Complex relative permittivity measurement of ceramics by Fabry-Perot resonator in millimeter frequency range","authors":"Y. Itoh, Y. Higashida","doi":"10.1109/EDMO.1999.821485","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821485","url":null,"abstract":"Several techniques for measuring accurately the complex permittivity of ceramics using a Fabry-Perot resonator have been developed in millimeter frequency range. Accurate measurement became possible at 40-60 GHz by the three new techniques: 1. exact centering of the sample; 2. exact determination of the sample normal direction parallel to the resonator axis using a laser beam; 3. reduction of the higher-order spurious modes. The relative permittivity, /spl epsi/, and dielectric loss tangent, tan /spl delta/, were measured for commercially available silica substrates. It was found that the value of /spl epsi/ was 3.80, independent of frequency, which is consistent with the general feature of fine ceramics with high purity. The measurement error of /spl epsi/ was /spl plusmn/0.5%.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128450179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability evaluation of GaAs HBT technologies GaAs HBT技术的可靠性评估
C. Maneux, N. Labat, N. Malbert-Saysset, A. Touboul, Y. Danto, J. Dumas, M. Riet, A. Scavennec
{"title":"Reliability evaluation of GaAs HBT technologies","authors":"C. Maneux, N. Labat, N. Malbert-Saysset, A. Touboul, Y. Danto, J. Dumas, M. Riet, A. Scavennec","doi":"10.1109/EDMO.1999.821464","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821464","url":null,"abstract":"This work describes the implementation of an experimental procedure to evaluate the reliability of Heterojunction Bipolar Transistors (HBT) on a GaAs substrate. It is based on the separation of ageing test accelerating factors applied to HBTs and TLM (\"Transmission Line Model\") structures associated with emitter base and collector layers. Three different technological manufacturing processes are investigated : AlGaAs/GaAs double-mesa HBT, GaInP/GaAs self-aligned HBT and GaInP/GaAs fully planar HBT. HBTs submitted to combined bias and temperature stresses exhibit either a degradation of the SiN/GaAs interface correlated with the increase of the emitter-base leakage current and/or a detachment of Ge/Mo/W emitter ohmic contact related to the base and collector current decrease for high level injection in the forward regime. These investigations have assessed that GaInP over the extrinsic base acts as a better passivation layer than the conventional SiN does.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131340344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation 电阻式FET混频器的晶圆互调失真测量,用于器件比较和模型验证
M. Hutabarat, D. Webster, D. Haigh, D. Schreurs, K. van der Zanden, D. Edgar, Z. Borsosfoldi, K. Elgaid, I. Thayne, A. Parker
{"title":"On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation","authors":"M. Hutabarat, D. Webster, D. Haigh, D. Schreurs, K. van der Zanden, D. Edgar, Z. Borsosfoldi, K. Elgaid, I. Thayne, A. Parker","doi":"10.1109/EDMO.1999.821480","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821480","url":null,"abstract":"This work describes an \"on wafer\" mixer measurement test set that is close to real single FET mixer designs. The test set demonstrated for the first time that some GaAs p-HEMTs have better 3rd order intermodulation performance than some GaAs MESFETs when used as resistive FET mixers. It is also shown that HEMTs give the same conversion loss of MESFETs with a significantly smaller gate width. Preliminary simulations with both table and empirical models were presented, showing that further work is required before CAD models can be used to successfully minimise 3rd order intermodulation distortion in resistive FET mixers.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121417666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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