High-performance SiGe pMODFETs grown by UHV-CVD

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-12-01 DOI:10.1109/EDMO.1999.821455

S. Koester, R. Hammond, J. Chu, J. Ott, P. Mooney, L. Perraud, K. Jenkins

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引用次数: 6

Abstract

The fabrication and characterization of 0.1 /spl mu/m-gate-length SiGe pMODFETs fabricated on UHV-CVD-grown heterostructures with various novel layer structure configurations are reported. We have fabricated Ge-Si/sub 0.4/Ge/sub 0.6/ pMODFETs with peak extrinsic transconductance (g/sub max/) values as high as 488 mS/mm at room temperature. These devices also displayed a unity current gain cutoff frequency (f/sub T/) of 42 GHz and maximum frequency of oscillation (f/sub max/) of 86 GHz. We have also investigated the performance of Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.7/Ge/sub 0.3/ pMODFETs on silicon-on-sapphire (SOS) substrates. These devices exhibited DC transconductances as high as g/sub max/=377 mS/mm, and had values of f/sub T/=49 GHz and f/sub max/=95 GHz. The first high-frequency noise characterization of SiGe MODFETs has also been performed. Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.65/Ge/sub 0.35/ pMODFETs grown on high-p Si substrates produced minimum noise figures of 1.1 dB (2.9 dB) with an associated gain (G/sub a/) of 18 dB (7.6 dB) at 3 GHz (18 GHz).

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UHV-CVD生长的高性能SiGe pmodfet

本文报道了在uhv - cvd生长异质结构上制备的具有多种新颖层状结构的0.1 /spl μ m栅极长度SiGe pmodfet的制备和表征。我们制作了室温下峰值外部跨导(g/sub max/)值高达488 mS/mm的Ge- si /sub 0.4/Ge/sub 0.6/ pmodfet。这些器件还显示出42 GHz的单位电流增益截止频率(f/sub T/)和86 GHz的最大振荡频率(f/sub max/)。我们还研究了Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.7/Ge/sub 0.3/ pmodfet在硅-蓝宝石(SOS)衬底上的性能。这些器件的直流跨导高达g/sub max/=377 mS/mm, f/sub T/=49 GHz和f/sub max/=95 GHz。本文还对SiGe modfet的高频噪声进行了首次表征。在高p Si衬底上生长的Si/sub 0.2/Ge/sub 0.8/-Si/sub 0.65/Ge/sub 0.35/ pmodfet在3 GHz (18 GHz)下产生的最小噪声系数为1.1 dB (2.9 dB)，相关增益(G/sub a/)为18 dB (7.6 dB)。

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1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

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