Development of components and integration techniques for high-speed InP-based OEIC

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI:10.1109/EDMO.1999.821078

B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren

引用次数: 0

Abstract

Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed.

查看原文本刊更多论文

基于inp的高速OEIC组件与集成技术的发展

综述了瑞典皇家理工学院在高速光电集成电路领域的活动。给出了离散器件和oeic的研究结果，并讨论了今后的工作方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

自引率

0.00%

发文量