B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren
{"title":"基于inp的高速OEIC组件与集成技术的发展","authors":"B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren","doi":"10.1109/EDMO.1999.821078","DOIUrl":null,"url":null,"abstract":"Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of components and integration techniques for high-speed InP-based OEIC\",\"authors\":\"B. Willén, M. Dahlstrom, U. Eriksson, S. Irmscher, O. Kjebon, U. Westergren\",\"doi\":\"10.1109/EDMO.1999.821078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed.\",\"PeriodicalId\":114744,\"journal\":{\"name\":\"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1999.821078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1999.821078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of components and integration techniques for high-speed InP-based OEIC
Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed.