{"title":"CMOS PIN光纤接收器和DVD OEIC","authors":"A. Ghazi, T. Heide, H. Zimmermann, P. Seegebrecht","doi":"10.1109/EDMO.1999.821469","DOIUrl":null,"url":null,"abstract":"Two monolithically integrated PIN CMOS OEICs (optoelectronic integrated circuits) are presented: A high-speed CMOS PIN fiber receiver for optical data transmission and optical interconnects and a CMOS PIN OEIC for optical storage systems. Both OEICs were integrated in a 1.0 /spl mu/m twin-well CMOS-process, using PIN-photodiodes as photodetectors. For the high-speed fiber receiver a NRZ data rate of 622 Mbit/s is achieved at a wavelength of 850 nm. For the CMOS DVD OEIC -3dB-frequencies up to 45 MHz are obtained at a wavelength of 638.3 nm. Compared to our previous work the sensitivity of the OEIC is doubled.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"CMOS PIN fiber receiver and DVD OEIC\",\"authors\":\"A. Ghazi, T. Heide, H. Zimmermann, P. Seegebrecht\",\"doi\":\"10.1109/EDMO.1999.821469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two monolithically integrated PIN CMOS OEICs (optoelectronic integrated circuits) are presented: A high-speed CMOS PIN fiber receiver for optical data transmission and optical interconnects and a CMOS PIN OEIC for optical storage systems. Both OEICs were integrated in a 1.0 /spl mu/m twin-well CMOS-process, using PIN-photodiodes as photodetectors. For the high-speed fiber receiver a NRZ data rate of 622 Mbit/s is achieved at a wavelength of 850 nm. For the CMOS DVD OEIC -3dB-frequencies up to 45 MHz are obtained at a wavelength of 638.3 nm. Compared to our previous work the sensitivity of the OEIC is doubled.\",\"PeriodicalId\":114744,\"journal\":{\"name\":\"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1999.821469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1999.821469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two monolithically integrated PIN CMOS OEICs (optoelectronic integrated circuits) are presented: A high-speed CMOS PIN fiber receiver for optical data transmission and optical interconnects and a CMOS PIN OEIC for optical storage systems. Both OEICs were integrated in a 1.0 /spl mu/m twin-well CMOS-process, using PIN-photodiodes as photodetectors. For the high-speed fiber receiver a NRZ data rate of 622 Mbit/s is achieved at a wavelength of 850 nm. For the CMOS DVD OEIC -3dB-frequencies up to 45 MHz are obtained at a wavelength of 638.3 nm. Compared to our previous work the sensitivity of the OEIC is doubled.