Investigation of optical-microwave frequency conversion processes for PIN photodiode

Abstract

Investigations of optical-microwave mixing process performed on a PIN photodetector are reported in the paper. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 /spl mu/m has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode has been assumed. The parameters of nonlinear equivalent circuit of the device have been extracted from the measured data. The influence of nonlinear responsivity has been considered. The short mathematical analysis, and measurement results are presented.